Patent application number | Description | Published |
20100033846 | LENS BARREL AND IMAGING DEVICE WITH LENS BARREL - There is provided a lens barrel and the like, which permits downsizing along the optical axis direction and in which the slide resistance is reduced. | 02-11-2010 |
20110019987 | LENS BARREL AND IMAGING DEVICE - The lens barrel includes a first supporting frame, an optical element, a second supporting frame, and a guide shaft. The first supporting frame has a first base portion and a first seat portion that projects in a first direction from the first base portion. The second supporting frame supports the optical element and has a first bearing portion. The guide shaft is coupled to the first seat portion and inserted into the first bearing portion. The first seat portion is disposed within the circumference of the guide shaft when viewed in the first direction. | 01-27-2011 |
20120307383 | LENS BARREL AND IMAGING DEVICE - The lens barrel includes a first supporting frame, an optical element, a second supporting frame, and a guide shaft. The first supporting frame has a first base portion and a first seat portion that projects in a first direction from the first base portion. The second supporting frame supports the optical element and has a first bearing portion. The guide shaft is coupled to the first seat portion and inserted into the first bearing portion. The first seat portion is disposed within the circumference of the guide shaft when viewed in the first direction. | 12-06-2012 |
20130194680 | LENS BARREL - A lens barrel includes a fixed frame, a rotary frame provided inside the fixed frame, a first frame provided inside the rotary frame, an electronic component provided inside the first frame, and a flexible printed circuit board connected, at one end thereof, to the electronic component and connected, at the other end thereof, to the fixed frame. A gear part is provided at an outer circumferential surface of the rotary frame. In the first frame, a first protrusion outwardly protruding beyond the gear part in a radial direction about the optical axis is provided at a position corresponding to the flexible printed circuit board in a circumferential direction about the optical axis on a side of the gear part opposite to the object in the optical axis direction. | 08-01-2013 |
Patent application number | Description | Published |
20080297501 | ACTIVE MATRIX DISPLAY DEVICE - A display device includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element. | 12-04-2008 |
20090096732 | Display device - The present invention provides a display device which can achieve the high breakdown voltage proof property, the enhancement of reliability or the expansion of the designing/process tolerance of transistors by the improvement of a circuit. A display device includes a plurality of pixels and a drive circuit which drives the plurality of pixels. The drive circuit includes a p-type first transistor which has a first electrode thereof connected to a first power source line to which a reference voltage V1 is applied, a p-type second transistor which has a first electrode thereof connected to a second electrode of the first transistor and a second electrode thereof connected to an output terminal thereof, an n-type third transistor which has a first electrode thereof connected to a second power source line to which a reference voltage V2 is applied, and an n-type fourth transistor which has a first electrode thereof connected to a second electrode of the third transistor and a second electrode thereof connected to an output terminal thereof. A first bias voltage Vcp is applied to a control electrode of the second transistor and a second bias voltage Vcn is applied to a control electrode of the fourth transistor. Further, a relationship V204-16-2009 | |
20100231615 | IMAGE DISPLAY DEVICE - Provided is an image display device for displaying an image by causing a light emitting element to emit light, the light emitting element being disposed in each of a plurality of pixel areas which are defined by dividing a display area into a grid pattern, the image display device including a pixel circuit for controlling light emission of the light emitting element disposed in each of the plurality of pixel areas, the pixel circuit being formed in an area having a portion that protrudes from the pixel area of the pixel circuit toward an adjacent pixel area and a portion where an adjacent pixel area protrudes into the pixel area. | 09-16-2010 |
20100245739 | Liquid Crystal Display Device - The present invention provides a liquid crystal display device which can reduce the difference in brightness between an image obtained from a reflection region and an image obtained from a transmission region. The liquid crystal display device includes a pixel electrode and a counter electrode in each pixel region on a liquid-crystal-side surface of one substrate out of respective substrates which are arranged to face each other with liquid crystal therebetween. The pixel region includes a transmission region and a reflection region. A gap between the pixel electrode and the counter electrode in the reflection region is set larger than the gap between the pixel electrode and the counter electrode in the transmission region. | 09-30-2010 |
20100302134 | LIQUID CRYSTAL DISPLAY DEVICE - The liquid crystal display panel of the present invention is formed of a number of pixels that are arranged in a matrix in a display region and a number of light sensor circuits that are provided in the display region, each of the number of light sensor circuits has a light sensor element, the backlight has a first light intensity and a second light intensity that is different from the first light intensity, the first light intensity and the second light intensity are switched between periodically with a predetermined period, the light sensor circuits have a light receiving period during which the amount of light is detected and a readout period during which the amount of light detected during the light receiving period is read out, the light receiving period is an integer multiple of the predetermined period, the light sensor elements have a light sensor operating state with a sensitivity to light and a light sensor non-operating state without sensitivity to light during the light receiving period, and the light sensor operating state and the light sensor non-operating state are switched between periodically with the predetermined period in sync with the switching of the light intensity of the backlight. | 12-02-2010 |
20120074297 | PHOTOSENSOR AND PHOTOSENSOR ARRAY - A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel. | 03-29-2012 |
20120074298 | PHOTOSENSOR AND PHOTOSENSOR ARRAY - A photosensor includes a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage, a capacitive element connected between the lower electrode and a second reference voltage, a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state, and a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on. | 03-29-2012 |
20120074406 | PHOTOSENSOR - A photosensor includes a photosensor array in which plural photosensor pixels are arranged in a matrix form and a backlight arranged below the photosensor array. The photosensor array includes a surface light-shielding film (for example, Al film), and the surface light-shielding film includes an incident hole through which light from an opposite side to the backlight is incident on the respective photosensor pixels, and a passage hole which is provided around the incident hole and irradiates the opposite side with irradiation light from the backlight. | 03-29-2012 |
20120188219 | ACTIVE MATRIX DISPLAY DEVICE - A display device includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element. | 07-26-2012 |
20130162623 | ACTIVE MATRIX DISPLAY DEVICE - A driving circuit for driving a display panel includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element. | 06-27-2013 |
20140146035 | ACTIVE MATRIX DISPLAY DEVICE - A driving circuit for driving a display panel includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element. | 05-29-2014 |
Patent application number | Description | Published |
20100227425 | Manufacturing method of liquid crystal display device - The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode. | 09-09-2010 |
20110227083 | Manufacturing method of liquid crystal display device - The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode. | 09-22-2011 |
20120299028 | MANUFACTURING METHOD FOR LIQUID CRYSTAL DISPLAY DEVICE - A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode. | 11-29-2012 |
20130308072 | MANUFACTURING METHOD FOR LIQUID CRYSTAL DISPLAY DEVICE - A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode. | 11-21-2013 |
20140132902 | MANUFACTURING METHOD FOR LIQUID CRYSTAL DISPLAY DEVICE - A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode. | 05-15-2014 |