Patent application number | Description | Published |
20080214008 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In a method of manufacturing a semiconductor device, a plurality of structures are formed on a substrate, and a coating film is formed over a whole surface of the substrate to cover the plurality of structures. A photoresist layer is formed to have an opening portion above a target structure of the plurality of structures, and the coating film on a side of the opening is etched to expose a part of the target structure by using the photoresist layer as a mask while maintaining the substrate in a state covered with the coating film. Also, a target portion as at least a portion of the target structure is etched while leaving the coating film, and the photoresist layer and the coating film are removed. | 09-04-2008 |
20090087957 | Method of fabricating semiconductor device - Photoresist on a metal is removed with less oxidation of the metal surface by the invented ashing. During process, the matching of oxygen gas ratio and wafer temperature under downstream plasma which means no RF bias plasma is controlled for oxidation amount not to depend on ashing time with required photo resist rate in manufacturing. | 04-02-2009 |
20090297986 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: forming a negative resist film having an annular pattern that masks an outer peripheral part of a wafer, on a film to be processed which is formed on the wafer; forming a positive resist film having a predetermined pattern on the negative resist film; and etching the film to be processed using the negative resist film and the positive resist film as a mask. | 12-03-2009 |
20100015789 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A semiconductor device | 01-21-2010 |
20100167493 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes a process of forming a STI trench in a substrate, a process of forming a thermal oxide film on a sidewall and a bottom surface of the STI trench, a process of performing a plasma treatment on a surface of the thermal oxide film that is located at a bottom portion of the STI trench, and a process of forming an insulating film in the STI trench using a CVD method | 07-01-2010 |
20110193136 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a structure of a semiconductor device that realizes an increase in a capacitor capacitance of a memory circuit to the maximum while inhibiting an increase in a contact resistance of a logic circuit, and a manufacture method thereof. When designating the number of layers of the local interconnect layers having wiring that makes up a logic circuit area as M and designating the number of layers of the local interconnect layers having wiring that makes up the memory circuit as N (M and N are natural numbers and satisfy M>N), capacitance elements are provided over the interconnect layers comprised of (M−N) layers or (M−N+1) layers. | 08-11-2011 |
Patent application number | Description | Published |
20080276040 | STORAGE APPARATUS AND DATA MANAGEMENT METHOD IN STORAGE APPARATUS - Provided are a storage apparatus and its data management method capable of preventing the loss of data retained in a volatile cache memory even during an unexpected power shutdown. This storage apparatus includes a cache memory configured from a volatile and nonvolatile memory. The volatile cache memory caches data according to a write request from a host system and data staged from a disk drive, and the nonvolatile cache memory only caches data staged from a disk drive. Upon an unexpected power shutdown, the storage apparatus immediately backs up the dirty data and other information cached in the volatile cache memory to the nonvolatile cache memory. | 11-06-2008 |
20090059674 | STORAGE APPARATUS, CONTROLLER AND CONTROL METHOD - Proposed is a highly reliable storage apparatus with fast access speed and low power consumption, as well as a controller and control method for controlling such a storage apparatus. This storage apparatus is equipped with a flash memory that provides a storage extent for storing data, a disk-shaped memory device with more data write cycles than the flash memory, and a cache memory with faster access speed than the flash memory. Data provided from a host system is stored in the cache memory, this data is read from the cache memory at a prescribed timing, data read from the cache memory is stored in the disk-shaped memory device, and, when a prescribed condition is satisfied, this data is read from the disk-shaped memory device, and the data read from the disk-shaped memory device is stored in the flash memory. | 03-05-2009 |
20090083480 | Storage system - The present invention comprises a memory, a plurality of access portions for accessing the memory, a memory adapter for controlling access to the memory from the plurality of access portions, and a response-type path (R path) and a throughput-type path (T path) which communicatively connect the respective access portions, and the memory adapter. The amount of information capable of being transferred by the R path within the same period of time is smaller than that of the T path, but the length of time from the sending of information until the receipt of a response thereto is shorter for the R path than for the T path. The length of time from the sending of information until the receipt of a response thereto is longer for the T path than for the R path, but the amount of information capable of being transferred by the T path within the same period of time is greater than that of the R path. The memory adapter preferentially allows access to the memory via the R path than access to memory via the T path. | 03-26-2009 |
20100049886 | STORAGE SYSTEM DISPOSED WITH PLURAL INTEGRATED CIRCUITS - To provide a transceiving technology that controls the mounting area of a circuit pertaining to transmission and/or reception and where the utilization efficiency of a buffer is improved. In a transmission side circuit, there are disposed a transmission side first circuit component that generates a first packet that follows a request and a transmission side second circuit component that is a lower-level circuit component of the transmission side first circuit component, includes a transmission buffer and temporarily stores in the transmission buffer, and transmits, a second packet that includes the first packet. The second packet includes a second header portion and a second data portion. In the second data portion that the second packet that is transmitted from the transmission side second circuit component includes, there is included the first packet, and in the second header portion, there is included a predetermined value as a parameter value that represents the type of the second packet. The predetermined value is a value that represents a predetermined one second packet type of plural second packet types. | 02-25-2010 |
20110296117 | STORAGE SUBSYSTEM AND ITS CONTROL METHOD - Provided is a storage subsystem capable of maintaining the reliability of I/O processing to a host apparatus, even if there is an unauthorized access from a processor core to a switch circuit, by applying a multi-core system to a processor. A multi-core processor is applied to a second logical address space that is different from a first logical address space to be commonly applied to multiple controlled units such as a host interface to be accessed by the processor. The switch circuit determines the processor core that issued an access based on an address belonging to a second address space, and maps an address containing in an access from the processor core to an address of a first address space. | 12-01-2011 |