Kim, Hwasung-Si
Beomseok Kim, Hwasung-Si KR
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20140103491 | SEMICONDUCTOR DEVICES - The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may include a sacrificial reaction layer including a metal-hydrogen compound. | 04-17-2014 |
Byeong Soo Kim, Hwasung-Si KR
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20080229273 | SYSTEMS AND METHODS FOR UV LITHOGRAPHY - A method of designing a lithographic mask for use in lithographic processing of a substrate is disclosed. The lithographic processing comprises irradiating mask features of a lithographic mask using a predetermined irradiation configuration. In one aspect, the method comprises obtaining an initial design for the lithographic mask comprising a plurality of initial design features having an initial position. The method further comprises applying at least one shift to at least one initial design feature and deriving there from an altered design so as to compensate for shadowing effects when irradiating the substrate using a lithographic mask corresponding to the altered design in the predetermined irradiation configuration. Also disclosed herein are a corresponding design, a method of setting up lithographic processing, a system for designing a lithographic mask, a lithographic mask, and a method of manufacturing it. | 09-18-2008 |
Dae Il Kim, Hwasung-Si KR
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20100271733 | HARD DISK DRIVE - A hard disk drive includes an end tap which extends from an end part of a suspension and supports a slider; a ramp which includes a parking guide rail including a parking guide wall on which the end tap is contact-guided and parked when a disk stops rotating; and a ramp rotating unit which is connected to the ramp and rotates the ramp based on parking states of the end tap. | 10-28-2010 |
Dae Wook Kim, Hwasung-Si KR
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20100117082 | SEMICONDUCTOR DEVICE CAPABLE OF COMPENSATING FOR ELECTRICAL CHARACTERISTIC VARIATION OF TRANSISTOR ARRAY - A semiconductor device capable of compensating for an electrical characteristic variation of a transistor array is provided. The semiconductor device includes an N-well region and a transistor array spaced from the N-well region and including a plurality of transistors. A characteristic of each of the transistors is adjusted to enable the transistors to have a same electrical characteristic. | 05-13-2010 |
Dong Kim, Hwasung-Si KR
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20140185384 | NONVOLATILE MEMORY DEVICES INCLUDING SIMULTANEOUS IMPEDANCE CALIBRATION - An operating method of a nonvolatile memory device is provided which includes receiving a command sequence; detecting whether the input command sequence accompanies an impedance calibration operation; and if the input command sequence accompanies the impedance calibration operation, simultaneously performing an operation corresponding to the input command sequence and the impedance calibration operation. | 07-03-2014 |
Dong Sam Kim, Hwasung-Si KR
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20100055496 | STEEL HAVING HIGH STRENGTH - A steel having an improved tensile strength includes a first layer formed of an ultra-low carbon steel; and a second layer that is formed in contact with the first layer, includes a first surface opposite to the first layer, is formed of a solid solution obtained by solid-solving nitrogen in the ultra-low carbon steel, and has a structure substantially the same as a structure of the first layer. | 03-04-2010 |
Eun-Mi Kim, Hwasung-Si KR
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20120248397 | NONVOLATILE STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF - In a variable resistance nonvolatile storage element, an electrode suitable for a variable resistance operation and formed of a metallic nitride layer containing Ti and N is provided. In a nonvolatile storage device including: a first electrode; a second electrode; and a variable resistance layer which is sandwiched between the first electrode and the second electrode and in which a resistance value changes to two different resistance states, at least one of the first electrode and the second electrode is an electrode including a metallic nitride layer containing at least Ti and N, and a mole ratio (N/Ti ratio) between Ti and N in at least a part of the metallic nitride layer, the part being in contact with the variable resistance layer is 1.15 or more and a film density is 4.7 g/cc or more. | 10-04-2012 |
Gi Bum Kim, Hwasung-Si KR
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20140197026 | SPUTTERING APPARATUS AND METHOD FOR FORMING A TRANSMISSIVE CONDUCTIVE LAYER OF A LIGHT EMITTING DEVICE - There is provided a method for manufacturing a nitride semiconductor light emitting device, including: forming a light emitting structure including first and second conductive nitride semiconductor layers on a substrate and an active layer formed therebetween; forming the first conductive nitride semiconductor layer, the active layer, and the second conductive nitride semiconductor layer in sequence; forming a first electrode connected to the first conductive nitride semiconductor layer; forming a photo-resist layer on the second conductive nitride semiconductor layer so as to expose a portion of the semiconductor layer; and removing the photo-resist layer after a reflective metal layer and a barrier metal layer serving as a second electrode structure are successively formed on the second conductive nitride semiconductor layer exposed by the photo-resist layer. | 07-17-2014 |
Gyeom Kim, Hwasung-Si KR
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20140217483 | SEMICONDUCTOR DEVICES INCLUDING GATE PATTERN, MULTI-CHANNEL ACTIVE PATTERN AND DIFFUSION LAYER - A semiconductor device includes a gate pattern on a substrate, a multi-channel active pattern under the gate pattern to cross the gate pattern and having a first region not overlapping the gate pattern and a second region overlapping the gate pattern, a diffusion layer in the multi-channel active pattern along the outer periphery of the first region and including an impurity having a concentration, and a liner on the multi-channel active pattern, the liner extending on lateral surfaces of the first region and not extending on a top surface of the first region. Related fabrication methods are also described. | 08-07-2014 |
Hack-Sung Kim, Hwasung-Si KR
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20120098317 | AUTOMOBILE SEAT - A vehicle seat is installed inside a vehicle such that an occupant can sit thereon. The vehicle seat includes a backrest which forms a part of the vehicle seat, the backrest being brought into contact with a back of the occupant when the occupant sits, and an armrest which is provided on a central portion of a region of the backrest that is adjacent to a door of the vehicle and extends inwards a predetermined length from the region of the backrest that is adjacent to the door of the vehicle along a surface of the backrest. The occupant is allowed to lean an arm on the armrest when erecting his/her body from the vehicle seat in order to get out. The armrest is provided in the backrest, so that the occupant can easily erect his/her body by leaning an arm on the armrest in order to get out. | 04-26-2012 |
Ho Jung Kim, Hwasung-Si KR
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20130042061 | APPARATUSES AND METHODS PROVIDING REDUNDANT ARRAY OF INDEPENDENT DISKS ACCESS TO NON-VOLATILE MEMORY CHIPS - A controller may include a RAID controller and an access controller. The RAID controller exchanges data with a host and select ones of a plurality of RAID levels responsive to RAID level information. The access controller is connected to the RAID controller and to a plurality of channels that are each connected to a plurality of non-volatile memory chips. The access controller accesses data in at least one of the non-volatile memory chips connected to each of the channels according to the selected RAID level. The controller can include a storage device and a main processor. The main processor logically partitions a plurality of non-volatile memory chips connected to each of a plurality of channels into a normal partition region and a RAID level partition region, where data access is performed according to a selected RAID level, in response partition information that is stored in the storage device. | 02-14-2013 |
Hong Gu Kim, Hwasung-Si KR
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20120154226 | SINGLE UNIT ANTENNA FOR VARIOUS FUNCTIONS AND PORTABLE DEVICE INCLUDING THE SAME - A portable device having a single unit antenna for various functions is provided. The device includes a main body configured to house a battery, a battery cover unit that is configured to be coupled with the main body and cover the battery, and a single unit antenna for various functions having a specified length, the antenna extending at least across a portion of the battery cover unit, and configured to support a plurality of functions. | 06-21-2012 |
20120177243 | EARPHONE CONNECTOR OF MOBILE TERMINAL - An earphone connector of a mobile terminal prevents noise from occurring when inserting and removing an earphone. The earphone connector of a mobile terminal includes a main body having a passage for inserting an earphone. Aground terminal, aright sound terminal, and a left sound terminal are disposed at a preset position of the main body to contact with a corresponding ground terminal, right sound terminal, and left sound terminal of the earphone, respectively, when the earphone is inserted into the passage. A microphone terminal contacts with a corresponding microphone terminal of the earphone when the earphone is fully inserted. And an elastic member applies an external force such that the microphone terminal does not contact with at least one of the corresponding right sound terminal and the left sound terminal of the earphone before the earphone is fully inserted. | 07-12-2012 |
Hyoung Rae Kim, Hwasung-Si KR
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20100141493 | DIGITAL-TO-ANALOG CONVERSION CIRCUIT AND COLUMN DRIVER INCLUDING THE SAME - A digital-to-analog conversion circuit includes a digital-to-analog converter and a buffer amplifier. The digital-to-analog converter receives upper bits of digital data and a plurality of analog voltages and is configured to output two adjacent analog voltages of the plurality of analog voltages based on the upper bits. The buffer amplifier includes two input terminals. One of the input terminals receives one of the two adjacent analog voltages and the other input terminal receives the other adjacent analog voltage. The buffer amplifier is configured to generate a current offset by controlling a current flowing into each of the two input terminals based on lower bits of the digital bits. | 06-10-2010 |
20100156795 | LARGE SIZE CAPACITIVE TOUCH SCREEN PANEL - A capacitive touch screen panel (TSP) includes multiple TSP sections assembled in a planar arrangement to provide a unitary user interface area. Each one of the TSP sections is configured for independent activation/deactivation with respect to other TSP sections. | 06-24-2010 |
20100171558 | OSCILLATOR FOR PROVIDING A CONSTANT OSCILLATION SIGNAL, AND A SIGNAL PROCESSING DEVICE INCLUDING THE OSCILLATOR - An oscillator including a current bias circuit and a ring oscillator. The current bias circuit tracks a temperature change of the oscillator by using a control voltage and generates a plurality of bias voltages to supply a bias current according to the temperature change. The ring oscillator compares differential output signals generated according to the bias voltages and generates an oscillation signal as a result of the comparison. | 07-08-2010 |
20100241957 | SYSTEM WITH DDI PROVIDING TOUCH ICON IMAGE SUMMING - A data processing system having a display incorporating a touch screen, a constituent display driver (DDI) and method of display an image including a touch icon are disclosed. The DDI receives image data principally defining the display data defining the image on the display and separately receives touch icon image data defining the touch icon within the image. The image data and the touch icon image data are combined in the DDI to generate the display data provided to the display. | 09-23-2010 |
In-Young Kim, Hwasung-Si KR
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20140138757 | SEMICONDUCTOR DEVICES INCLUDING VARIABLE WIDTH FLOATING GATES, AND APPARATUS FOR PROCESSING SUBSTRATE - A semiconductor device includes a substrate including an active region defined by a device isolation pattern and a floating gate on the active region. The floating gate includes an upper portion, a lower portion having a width greater than a width of the upper portion, and a step-difference portion between the upper portion and the lower portion. A dielectric pattern is on the floating gate, and a control gate is on the dielectric pattern. The lower portion of the floating gate has a height of about 4 nm or more. | 05-22-2014 |
Jae-Geuk Kim, Hwasung-Si KR
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20140101115 | SEGMENT GROUP-BASED SEGMENT CLEANING APPARATUS AND METHODS FOR STORAGE UNITS - Victim segments to be returned to a free area in a segment cleaning process from a plurality of segments included in each segment group are selected by using a method corresponding to the segment group. A host comprises an interface relaying data exchange with a storage device; and a file system module performing a segment cleaning process by selecting victim segment from a plurality of segments stored in the storage device, discovering live blocks in each of the victim segments, writing back the discovered live blocks to the storage device through the interface, and returning the victim segments to a free area. The file system module calculates victim points for all segments included in a first segment group using a first victim point calculation formula, calculates victim points for all segments included in a second segment group using a second victim point calculation formula, and selects the victim segments based on the victim points. | 04-10-2014 |
Jung Hyeon Kim, Hwasung-Si KR
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20100232064 | HARD DISK DRIVE - A hard disk drive, in which a flexible printed circuit board (FPC) bracket is readily assembled and sealed to a base together with a gasket header even though a screw or a sealing tape that involves a screw driver or other assembling tools is not used, or a boss of the base is not tapped. | 09-16-2010 |
Ki-Duk Kim, Hwasung-Si KR
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20160034094 | PROGRAMMABLE GAIN AMPLIFIERS WITH OFFSET COMPENSATION AND TOUCH SENSOR CONTROLLER INCORPORATING THE SAME - A programmable gain amplifier (PGA) circuit includes a first input resistor coupled between a first input node and a first summing node and a second input resistor coupled between a second input node and a second summing node. The PGA circuit further includes a first variable reference resistor coupled between a third input node and the first summing node, a second variable reference resistor coupled between a fourth input node and the second summing node, and an operational amplifier having first and second inputs coupled to respective ones of the first and second summing nodes and first and second outputs coupled to respective ones of the first and second output nodes. At least of the first and second reference resistors may include an R-2R ladder circuit. | 02-04-2016 |
Kihyun Kim, Hwasung-Si KR
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20130082316 | THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICES INCLUDING INTERPOSED FLOATING GATES - Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers. | 04-04-2013 |
20140138756 | THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICES INCLUDING INTERPOSED FLOATING GATES - Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers. | 05-22-2014 |
20150145016 | THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICES INCLUDING INTERPOSED FLOATING GATES - Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers. | 05-28-2015 |
20150155292 | THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICES INCLUDING INTERPOSED FLOATING GATES - Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers. | 06-04-2015 |
Kil-Soo Kim, Hwasung-Si KR
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20100314740 | SEMICONDUCTOR PACKAGE, STACK MODULE, CARD, AND ELECTRONIC SYSTEM - A multi-chip package device can include a plurality of integrated circuit device chips stacked on one another inside a multi-chip package including the device. The device can include an electrically isolated multi-chip support structure that is directly connected to first and second electrically active integrated circuit structures via respective first and second adhesive layers located on opposing sides of the electrically isolated multi-chip support structure. | 12-16-2010 |
Minsu Kim, Hwasung-Si KR
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20120132728 | INJECTOR FOR VEHICLES - An injector for vehicles improves utilization rate of air and mixing rate of air and fuel by disposing first and second nozzle holes having different K factors alternately. The injector for vehicles may include a housing of cylindrical shape, a plurality of nozzle holes communicating an inside of the housing with an outside thereof at a lower end of the housing, and a needle adapted to move reciprocally in the housing, and selectively opening or closing the nozzle hole, wherein the plurality of nozzle holes has a plurality of K factors. | 05-31-2012 |
20130116910 | SYSTEM AND METHOD FOR JUDGING ABNORMAL CONDITION OF A COMBUSTION PRESSURE SENSOR - A system and method for judging an abnormal condition of a combustion pressure sensor, may include determining whether a driving condition of a vehicle, a fuel injection condition, and an intake air condition may be satisfied, deriving a relational equation from an amount of air measured in real time and a combustion pressure measured by the combustion pressure sensor, and monitoring a slope and a y-intercept of the relational equation when the driving condition, the fuel injection condition, and the intake air condition may be satisfied, determining whether the slope and the y-intercept may be in a predetermined normal range, accumulating the number of times the slope and the y-intercept may be beyond the predetermined normal range, and outputting a warning when the accumulated number reaches a number which may be predetermined as an abnormal condition number of the sensor. | 05-09-2013 |
Mun Ja Kim, Hwasung-Si KR
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20140220481 | PHOTOMASKS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME - The present inventive concept provides a photomask including a substrate, patterns disposed on the substrate, and an anti-contamination layer disposed on the patterns. The anti-contamination layer includes at least one graphene layer. Methods of fabricating a semiconductor device including the same are also provided. | 08-07-2014 |
Seongsue Kim, Hwasung-Si KR
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20140220481 | PHOTOMASKS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME - The present inventive concept provides a photomask including a substrate, patterns disposed on the substrate, and an anti-contamination layer disposed on the patterns. The anti-contamination layer includes at least one graphene layer. Methods of fabricating a semiconductor device including the same are also provided. | 08-07-2014 |
Seung Kyu Kim, Hwasung-Si KR
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20100225371 | Methods of Operating Timers to Inhibit Timing Error Accumulation - Methods of operating timers include generating a periodic timing signal having a first frequency that differs from a desired timer frequency (1 KHz) by a first amount. This periodic timing signal having the first frequency can be generated by dividing a frequency of an input clock signal (e.g., 32.768 KHz) by N, where N is a positive integer greater than one. A typical value of N may be 32. The methods also include techniques to inhibit timing error accumulation by switching a frequency of the periodic timing signal from the first frequency to a second frequency that differs from the desired timer frequency by a second amount. This periodic timing signal having the second frequency can be generated by dividing the frequency of the input clock signal by M, where M is a positive integer unequal to N (e.g., M−N equals±1). | 09-09-2010 |
Si Woo Kim, Hwasung-Si KR
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20100091002 | Switching circuit, DC-DC converter and display driver integrated circuit including the same - A switching circuit and a DC-DC converter including the same are provided. The switching circuit includes an output terminal, a plurality of input terminals, and a plurality of switches configured to selectively connect the plurality of input terminals to the output terminal. The plurality of switches include a first switch directly connected to the output terminal and a plurality of second switches connecting the plurality of input terminals to the first switch. The first switch is implemented using a high-voltage transistor. Each of the second switches is implemented using a low-voltage transistor. A gate of the high-voltage transistor is at least two times longer than a gate of the low-voltage transistor. The DC-DC converter increases or decreases a signal selected from among a plurality of input signals input through the input terminals by a predetermined voltage level. Most of switches in the switching circuit are implemented using low-voltage transistors, thereby decreasing the area of the switching circuit. | 04-15-2010 |
Soo Hyung Kim, Hwasung-Si KR
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20120019189 | METHOD AND APPARATUS FOR CHARGING BATTERY USING SOLAR BATTERY - A method and an apparatus for charging a battery using a solar cell are provided. The method includes detecting an output state of the solar cell, searching a mapped charging current amount corresponding to the detected output state of the solar cell, setting a charging current amount of a charging unit for charging the battery based on the found charging current amount, and charging the battery with the set charging current amount. The method may maximize charging efficiency of a battery using the solar cell. Furthermore, the method may prevent output power consumption of a solar cell. Accordingly, the method may improve charging efficiency in comparison with a portable terminal of the related art in the same condition to shorten a charging time. | 01-26-2012 |
Sung Chul Kim, Hwasung-Si KR
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20100055496 | STEEL HAVING HIGH STRENGTH - A steel having an improved tensile strength includes a first layer formed of an ultra-low carbon steel; and a second layer that is formed in contact with the first layer, includes a first surface opposite to the first layer, is formed of a solid solution obtained by solid-solving nitrogen in the ultra-low carbon steel, and has a structure substantially the same as a structure of the first layer. | 03-04-2010 |
Sung-Eun Kim, Hwasung-Si KR
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20100088660 | Method for acquiring overshoot voltage and analyzing degradation of a gate insulation using the same - A method of acquiring an overshoot voltage applied to a transistor includes determining a first extraction value, the first extraction value including a product of acceleration factors determined in a test of the transistor, determining an applied time, the applied time corresponding to a length of time a voltage deviates from a predetermined level of an input voltage in a circuit employing the transistor, determining a second extraction value by dividing the first extraction value by the applied time, and determining the overshoot voltage by multiplying the second extraction value by the input voltage. | 04-08-2010 |
Sung Hun Kim, Hwasung-Si KR
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20090018838 | Media interface - Provided are a user interface for processing digital data, a method for processing a media interface, and a recording medium thereof. The user interface is used for converting a selected script into voice to generate digital data having a form of a voice file corresponding to the script, or for managing the generated digital data. In the method, the user interface is displayed. The user interface includes at least a text window on which a script to be converted into voice is written, and an icon to be selected for converting the script written on the text window into voice. | 01-15-2009 |
20130056976 | ONE-TOUCH PIPE CONNECTION DEVICE - A one-touch pipe connection device includes a body member for receiving a pipe, a fluid-tight member positioned in each of left and right side of the inner peripheral surface of the first body member with reference to the longitudinal center of the inner peripheral surface to ensure fluid-tightness, a support member for linearly compressing the fluid-tight member, a fastening member being screwed to the body member; a compression member inserted into the fastening member, and moved outwardly by a compression spring, and a plurality of tight contact elements provided on the compression member tightly clamped on the outer peripheral surface of the pipe when the compression member is moved. | 03-07-2013 |
Taek-Jung Kim, Hwasung-Si KR
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20100283154 | SPUTTERING TARGET AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME - A sputtering target includes a tungsten (W)-nickel (Ni) alloy, wherein the nickel (Ni) is present in an amount of between about 0.01 weight % and about 1 weight %. | 11-11-2010 |
Taeseong Kim, Hwasung-Si KR
Tae Sun Kim, Hwasung-Si KR
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20110120410 | GASOLINE DIRECT INJECTION ENGINE - A gasoline direct injection engine that has an injector directly injecting fuel into a combustion chamber, a spark plug, an intake valve, and an exhaust valve and generates power by reciprocating a piston in a cylinder, may include a cavity formed on a piston head and returning some flow of the fuel injected from the injector to the intake valve, and a channel formed around the cavity. | 05-26-2011 |
Wan Cheol Kim, Hwasung-Si KR
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20110098574 | PATIENT POSITION MONITORING APPARATUS - A patient position monitoring apparatus capable of monitoring the position of a patient is provided. The patient position monitoring apparatus includes a position guider emitting a source and a plurality of guide markers sensing the source emitted from the position guider and transmitting sensed information to the position guider. The position guider determines whether positions of the guide markers are changed through the sensed information. When the position of the patient is changed, and thus the source emitted from the position guider is out of the range of the guide markers, a warning signal is output. Accordingly, a user can monitor a variation in the position of the patient even if the user does not continuously observe the patient. | 04-28-2011 |
Wandon Kim, Hwasung-Si KR
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20140103491 | SEMICONDUCTOR DEVICES - The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may include a sacrificial reaction layer including a metal-hydrogen compound. | 04-17-2014 |
Woo Sik Kim, Hwasung-Si KR
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20100262847 | APPARATUS AND METHODS OF CONTROLLING A POWER MANAGEMENT MODE OF A DIGITAL PROCESING DEVICE - An apparatus and method of controlling power consumption of a digital processing device. The apparatus and method determine whether a power management mode of the digital processing device is enabled. When a power management mode is enabled, the power is reduced to at least one portion of the digital processing device to fully power one or more memory devices of the digital processing device to a normal operation ready state. When the power management mode is disabled, power is provided to the one or more memory devices of the digital processing device to the normal operation ready state. | 10-14-2010 |
Yitae Kim, Hwasung-Si KR
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20140015025 | IMAGE SENSORS INCLUDING CHANNEL STOP REGIONS SURROUNDING PHOTODIODES AND METHODS OF FABRICATING THE SAME - Image sensors are provided. In the image sensor, an area of a device isolation layer may be reduced and elements may be isolated from each other by a channel stop region extending between the photoelectric conversion region and the device isolation layer, such that a dark current property of the image sensor may be improved. | 01-16-2014 |
20140015026 | IMAGE SENSORS INCLUDING WELL REGIONS OF DIFFERENT CONCENTRATIONS - An image sensor includes a high concentration well region in contact with a device isolation layer extending along a periphery of a photoelectric converting part, which can improve dark current properties of the image sensor. The image sensor also includes a low concentration well region in contact with a sidewall of the device isolation layer overlapped with a transfer gate, which can improve image lag properties of the image sensor. Related fabrication methods are also discussed. | 01-16-2014 |
Youn Tai Kim, Hwasung-Si KR
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20100232064 | HARD DISK DRIVE - A hard disk drive, in which a flexible printed circuit board (FPC) bracket is readily assembled and sealed to a base together with a gasket header even though a screw or a sealing tape that involves a screw driver or other assembling tools is not used, or a boss of the base is not tapped. | 09-16-2010 |