Takatomo
Takatomo Fukumoto, Nagano JP
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20100209126 | DEVELOPING DEVICE AND IMAGE FORMING APPARATUS - A developing device includes: a developing roller on the surface of which intersecting inclined grooves are formed by rolling working; and a seal member which comes into contact with the developing roller, wherein ridge portions of a convex portion surrounded by the inclined grooves of the surface of the developing roller are formed such that rotational resistance due to the contact of the seal member on the downstream side of a rotation direction opposite to a rotation direction of the developing roller at the time of development is larger than rotational resistance due to the contact of the seal member on the downstream side of a rotation direction of the developing roller at the time of development, and at the time of refreshing of the seal member, the developing roller is rotated in the opposite direction to a direction at the time of development. | 08-19-2010 |
Takatomo Fukumoto, Nagano-Ken JP
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20080267666 | Developing Device, Image Forming Apparatus, Image Forming System, Cartridge, Developing Unit and Photoconductor Unit - A developing device that can be mounted to and dismounted from a mounting and dismounting section provided in an image forming apparatus main unit, the developing device includes: a developing device main unit; a positioning member for positioning the developing device main unit with respect to the mounting and dismounting section by engaging the mounting and dismounting section when the developing device is mounted to the mounting and dismounting section, the positioning member being fixed on a one end side in a longitudinal direction of the developing device main unit; a coupling member that is to be coupled to the mounting and dismounting section when the developing device is mounted to the mounting and dismounting section, the coupling member being attached to the other end side in the longitudinal direction of the developing device main unit in such a manner that its relative position to the developing device main unit can be changed; and an element capable of communication in a noncontacting manner with the image forming apparatus main unit side when the developing device is mounted to the mounting and dismounting section, the element being provided at the one end side in the longitudinal direction of the developing device main unit. | 10-30-2008 |
Takatomo Kawamukai, Gunma JP
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20110067423 | Defrost timer for refrigerator and refrigerator - The defrost timer is typically provided to remove frost on an evaporator in a refrigerator. The defrost timer includes a circuit board, a first terminal, a second terminal, a third terminal, a fourth terminal, a switching unit, a first AC line, a second AC line, a third AC line and a fourth AC line. The first AC line is provided on the circuit board and connects the first terminal and the switching unit. The second AC line is provided on the circuit board and connects the second terminal and the switching unit. The third AC line is provided on the circuit board and connects the third terminal and the switching unit. The fourth AC line is provided on the circuit board and connects the fourth terminal and the switching unit. Distance between the third AC line and the fourth AC line is at least 5 mm. | 03-24-2011 |
Takatomo Kudo, Kobe-Shi JP
Takatomo Ogata, Nagoya-City JP
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20140021830 | PIEZOELECTRIC DEVICE AND PRODUCTION METHOD FOR GREEN COMPACT BEING MOLDED BODY OF PIEZOELECTRIC DEVICE PRIOR TO SINTERING - A plurality of piezoelectric device corresponding parts including a green main body part and a green top surface electrode formed on a top surface of the green main body part are placed on a tabular substrate at intervals. Next, a tabular elastic body is pressed from above to the plurality of piezoelectric device corresponding parts, so as to form an inclined part declined toward an outer side in an edge of a top surface of each piezoelectric device corresponding part, and to form a circular arc part at an intersection between the inclined part and a side surface of the piezoelectric device corresponding part. Next, a green side surface electrode is formed on the side surface of each piezoelectric device corresponding part so that the green side surface electrode is connected to the green top surface electrode. Next, this molded body is sintered so that a piezoelectric device is obtained. | 01-23-2014 |
Takatomo Ohno, Akashi-Shi JP
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20140246262 | INDUSTRIAL VEHICLE - A wheel loader includes: a driver's cab; an engine; a chassis, at sides of which tires are provided; an engine room in which the engine is mounted on the chassis, the engine room being provided behind the driver's cab; front portion structures respectively standing at left and right positions of a surface of the engine room, the surface being located at the driver's cab side; rear portion structures respectively standing at left and right positions of a surface of the engine room, the surface being opposite to the surface located at the driver's cab side; and a coupling structure that couples upper portions of the front portion structures to upper portions of the rear portion structures and forms a peripheral device installation space at an upper portion of the engine. | 09-04-2014 |
Takatomo Sasaki, Suita-Shi JP
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20080217579 | Light-emitting apparatus, phosphor and method of producing it - A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm | 09-11-2008 |
20100059717 | GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND GaN CRYSTAL PRODUCING APPARATUS - A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. | 03-11-2010 |
Takatomo Sasaki, Osaka-Fu JP
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20080223286 | Method for producing a semiconductor crystal - Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction. | 09-18-2008 |
Takatomo Sasaki, Toyota-Shi JP
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20140063688 | CAPACITOR MODULE - A capacitor module includes a first film capacitor, a second film capacitor, and a bus bar. The first film capacitor has electrodes at both ends thereof. The second film capacitor has electrodes at both ends thereof A lateral face of the second film capacitor is provided adjacent to a lateral face of the first film capacitor. The bus bar electrically connects the first film capacitor and the second film capacitor to an external device. The bus bar is connected to the electrodes on one end side of the first film capacitor and the second film capacitor. The bus bar is extended to the other end side through a gap between the first film capacitor and the second film capacitor. | 03-06-2014 |
Takatomo Suzuki, Yamato-Shi JP
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20110233287 | THERMOSTAT DEVICE - Provided is a thermostat device which improves the assembling work, reduces the manufacturing cost, and transfers heat to a temperature sensing/operating part more efficiently. The thermostat device includes a cylindrical high-temperature-coolant rectification part which forms a high-temperature coolant passage to bypass a high-temperature coolant heated by an engine, and is communicated and extended so as to partially or entirely cover the temperature sensing/operating part, permitting the high-temperature coolant flowing in the high-temperature coolant passage flow out from a discharge opening after being in contact with the periphery (bottom surface/side surface) of the temperature sensing/operating part, a receiving part provided on the outer periphery side of the high-temperature-coolant rectification part, a spring fitted between the valve body and the receiving part to press the valve body in a valve closing direction and press the receiving part in a direction away from the valve body, and a frame which is continual from an upper end of a piston shaft and engages with the pressed receiving part while receiving urging force thereof. | 09-29-2011 |
Takatomo Watamori, Tokyo JP
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20120248819 | FRONT VEHICLE BODY STRUCTURE - There is provided a front vehicle body structure. A radiator panel lower is mounted between front ends of side frames, crash boxes at the front ends of the side frames, and a bumper beam between front ends of the crash boxes. The radiator panel lower includes a bracket offset toward the inside in the vehicle width direction from the side frame. Upon an offset front collision, a shock load is absorbed by an axial compression deformation of one of the crash boxes and a drag of the side frames. Upon a full-overlap front collision, the right and left crash boxes are subjected to the axial compression deformation, and the shock load is input to the bracket, thereby bending the side frames. Accordingly, and a sufficient axial compression deformation of the crash boxes is secured, and the shock load is absorbed by the reduction in the drag of the side frames. | 10-04-2012 |
20140291053 | VEHICLE BODY STRUCTURE - A vehicle body structure includes a main frame, an upper frame disposed in an upward direction and an outward direction of the main frame, an engine, and a reinforcing unit different from an upper suspension holder for supporting an upper suspension. | 10-02-2014 |
Takatomo Yamaguchi, Toyama JP
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20090269933 | Substrate Processing Apparatus and Semiconductor Device Manufacturing Method - A substrate processing apparatus comprises a processing chamber for storing a substrate and performing a specified processing on the substrate, a substrate holding jig for holding the substrate in the processing chamber, a placement stand capable of moving the substrate holding jig inside and outside the processing chamber while mounting the substrate holding jig, a substrate holding jig movement mechanism for moving the substrate holding jig to a location different from the placement stand while holding the substrate holding jig, and a substrate holding jig movement suppression mechanism for suppressing vertical and horizontal movement of the substrate holding jig in order to keep the substrate holding jig mounted on the placement unit of the substrate holding jig movement mechanism. | 10-29-2009 |
20110204036 | HEAT TREATMENT APPARATUS - Provided is a heat treatment apparatus having a temperature detection unit installed outside a reaction chamber and capable of preventing a process gas from contacting the temperature detection unit to form a film and improving reliability and reproduction of a measurement value of the temperature detection unit. The heat treatment apparatus for growing a single crystalline film or polycrystalline films on a plurality of substrates includes a boat configured to hold the plurality of substrates, a cylindrical heat generating material ( | 08-25-2011 |
20120067869 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus capable of maintaining a temperature of a furnace port part at a heat-resistant temperature or less of each member constituting the furnace part. The substrate processing apparatus includes a process chamber configured to process a plurality of substrates vertically stacked at predetermined intervals; a substrate retainer configured to hold the plurality of substrates in the process chamber; and a first heat exchanger installed in the process chamber to support the substrate retainer from a lower portion of the substrate retainer, and configured to perform a heat exchange with a gas flowing in a downward direction from a side of the substrate retainer in the process chamber, wherein the first heat exchanger includes a hollow cylindrical insulating tube vertically extending in the downward direction and an insulating plate installed in the insulating tube, and regions in the insulating tube over and under the insulating plate are spatially connected to each other. | 03-22-2012 |
20120220107 | SUBSTRATE PROCESSING APPARATUS, WAFER HOLDER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus having a stack structure of wafers that can endure a high temperature without bad influence on film-forming precision. The stack structure includes a holder base ( | 08-30-2012 |
20120220108 | SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SUBSTRATE - When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates. | 08-30-2012 |
20130042803 | Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - A substrate processing apparatus includes: a process chamber having an object to be heated therein and configured to process a plurality of substrates; a substrate holder configured to hold the substrates with an interval therebetween in a vertical direction in the process chamber; a first heat exchange unit supporting the substrate holder from a lower side thereof in the process chamber and configured to perform a heat exchange with a gas in the process chamber; a second heat exchange unit provided in the process chamber, the second heat exchange unit being horizontally spaced apart from the first heat exchange unit with a gap therebetween and being configured to perform a heat exchange with the gas in the process chamber; and an induction heating unit configured to subject the object to be heated to an induction heating from an outer side of the object to be heated. | 02-21-2013 |
Takatomo Yamaguchi, Toyama-Shi JP
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20100224128 | SEMICONDUCTOR MANUFACTURING APPARATUS - Provided is a semiconductor manufacturing apparatus in which the density of plasma generating in a reaction chamber can be uniformly maintained. The semiconductor manufacturing apparatus comprises a process chamber configured to process a substrate, a plurality of electrodes installed outside the process chamber for generating plasma, and an adjusting unit disposed between the process chamber and the electrodes for adjusting density of plasma generating in the process chamber. | 09-09-2010 |
20110000425 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus comprises: a reaction chamber to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, the insulator having a cylindrical shape with a closed end facing the closed end of the heating target object; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system to supply at least a source gas into the reaction chamber; and a controller to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate. | 01-06-2011 |
20110056434 | HEAT TREATMENT APPARATUS - Provided is a heat treatment apparatus in which the temperature of an insulator heated by an induction current can be kept low and a susceptor can be efficiently heated. The heat treatment apparatus is provided for growing silicon carbide single crystal films or silicon carbide polycrystal films on a plurality of silicon carbide substrates. The heat treatment apparatus comprises a coil installed around an outside of a reaction tube to generate a magnetic field, a susceptor installed in the reaction tube and configured to be heated by an induction current, and an insulator installed between the susceptor and the reaction tube. The insulator is divided into parts in a circumferential direction, and an insulating material is inserted between the divided parts of the insulator. | 03-10-2011 |
20120214317 | SUBSTRATE PROCESSING APPARATUS AND METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A substrate processing apparatus includes a processing chamber configured to process a plurality of substrates, a substrate holder accommodated within the processing chamber and configured to hold the substrates in a vertically spaced-apart relationship, a thermal insulation portion configured to support the substrate holder from below within the processing chamber, a heating unit provided to surround a substrate accommodating region within the processing chamber, and a gas supply system configured to supply a specified gas to at least a thermal insulation portion accommodating region within the processing chamber. | 08-23-2012 |
20130109193 | SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD | 05-02-2013 |