Patent application number | Description | Published |
20080203573 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device including first and second wiring layers, and dummy and conductive patterns. The first and second wiring layers each have a hollow structure, and are stacked vertically adjacent to each other on a semiconductor substrate. The dummy pattern is formed in the first wiring layer, and does not function as a signal line. The conductive pattern is formed in the second wiring layer. The dummy and conductive patterns have an overlapping portion where these patterns overlap each other, and a non-overlapping portion where these patterns overlap each other, as viewed from above the semiconductor substrate. | 08-28-2008 |
20080246155 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device according to an embodiment includes: a semiconductor substrate having a semiconductor element formed on a surface thereof; an interwiring insulating film formed above the semiconductor substrate; a wiring formed in the interwiring insulating film; a first intervia insulating film formed under the interwiring insulating film; a first via formed in the first intervia insulating film and connected to a lower surface of the wiring; a second intervia insulating film formed on the interwiring insulating film; a second via formed in the second intervia insulating film and connected to an upper surface of the wiring; and a CuSiN film formed in at least one of a position between the interwiring insulating film and the first intervia insulating film, and a position between the interwiring insulating film and the second intervia insulating film. | 10-09-2008 |
20090152736 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device includes forming an insulating film above a semiconductor substrate, forming a concave portion in the insulating film, forming a precursor film including a predetermined metallic element on a surface of the insulating film, carrying out a heat treatment on the precursor film and the insulating film to react with each other, thereby forming an insulative barrier film mainly comprising a compound of the predetermined metallic element and a constituent element of the insulating film in a self-aligned manner at a boundary surface between the precursor film and the insulating film, removing an unreacted part of the precursor film after forming the barrier film, forming a conductive film comprising at least one of Ru and Co on the barrier film, depositing a wiring material film on the conductive film, and forming a wiring from the wiring material film to provide a wiring structure. | 06-18-2009 |
20100052028 | CAPACITOR OF DYNAMIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE CAPACITOR - A transistor formed on a semiconductor substrate has a gate electrode formed via a gate insulating film and first and second diffusion layers formed in the semiconductor substrate, the first and second diffusion layers being positioned at both sides of the gate electrode. A first electrode is connected to the first diffusion layer of the transistor. A capacitor insulating film formed on the first electrode is formed of a silicon oxide film containing a substrate which is faster than Cu in diffusion velocity and which more readily reacts with oxygen than Cu does. A second electrode formed on the capacitor insulating film is formed of one of a Cu layer and another Cu layer containing the substance. | 03-04-2010 |
20100244254 | Semiconductor device - A semiconductor device is disclosed, which includes a first interlayer insulating film, a lower-layer interconnection in a first groove in the first film, a second interlayer insulating film over the first film, having a normal via hole opening to the lower-layer interconnection, a normal plug in the normal hole, a third interlayer insulating film over the second film, having a second groove opening to the normal plug, an upper-layer interconnection in the second groove, and a first dummy plug in a first dummy via hole in the second film, the first dummy via hole opening to one of the lower-layer and upper-layer interconnections, wherein a short side of the first dummy plug is larger than a minimum width of a minimum width interconnection and smaller than a minimum diameter of a minimum diameter via hole and a long side is larger than a shortest length of a shortest length interconnection. | 09-30-2010 |
20110097890 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device according to an embodiment includes: forming a precursor film containing therein a predetermined metallic element on a surface of a recess portion formed in an insulating film on a semiconductor substrate; forming a wiring formation film on the precursor film; performing a heat treatment in an oxidation ambient atmosphere to cause the precursor film and the insulating film to react with each other, thereby forming a self-formed barrier film containing a compound, containing therein the predetermined metallic element and a constituent element of the insulating film, as a basic constituent in a boundary surface between the precursor film and the insulating film, and moving the predetermined metallic element unreacted into the wiring formation film through diffusion to cause the predetermined metallic element unreacted to react with oxygen contained in the oxidation ambient atmosphere on a surface of the wiring formation film, thereby precipitating an unreacted metallic oxide film including the predetermined metallic element; forming the same material as that of the wiring formation film on the wiring formation film after the unreacted metallic oxide film is removed; and flattening the wiring formation film until a portion of the insulating film located outside the recess portion is exposed. | 04-28-2011 |
20110189849 | SEMICONDUCTOR DEVICE WITH A BARRIER FILM - A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film. | 08-04-2011 |
Patent application number | Description | Published |
20100223768 | METHOD OF MANUFACTURING LIQUID TRANSPORTING APPARATUS - There is provided a method of manufacturing liquid transporting apparatus including: providing a channel unit; providing a piezoelectric actuator having a first and second active portion corresponding to a central portion and an outer periphery portion of the pressure chamber, respectively. The first and second active portions are sandwiched between an upper electrode and an intermediate electrode, and between the upper electrode and a lower electrode, respectively. The method further includes joining the channel unit and the piezoelectric actuator by positioning such that the intermediate electrode overlaps the central portion of the pressure chamber. Accordingly, since it is possible to make the first active portion overlap the central portion of the pressure chamber, it is possible to apply a appropriate pressure to the liquid in the pressure chamber without excessively small deformation of the first active portion. | 09-09-2010 |
20110074885 | DROPLET EJECTING APPARATUS - A droplet ejecting apparatus, including: a head having a cavity unit with pressure chambers and a piezoelectric actuator; and a voltage application device, the actuator including: first and second active portions; a first potential electrode; a second potential electrode including a second trunk portion; and individual electrodes each having a connection portion, wherein the connection portion is disposed to overlap the second trunk portion as seen in a superposition direction of the cavity unit and the actuator, wherein the individual electrodes are arranged in rows to correspond to rows of the pressure chambers, and all connecting portions belonging to any one row are disposed on the same side in a direction of arrangement of the rows, and wherein the connecting portions of the individual electrodes that belong to one and the other of any adjacent two rows are disposed on mutually opposite sides with respect to the corresponding pressure chambers. | 03-31-2011 |
Patent application number | Description | Published |
20090134517 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first insulating film is formed on a semiconductor substrate. A first interconnection is formed in a trench formed in the first insulating film. A first barrier film is formed between the first interconnection and first insulating film. A second insulating film is formed on the upper surface of the first interconnection, and in a first hollow portion between the side surface of the first barrier film and the first insulating film. The second insulating film is formed from the upper surface of the first interconnection to a depth higher than the bottom surface of the first interconnection. The first hollow portion is formed below the bottom surface of the second insulating film. | 05-28-2009 |
20090283913 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes: a copper (Cu) wire having a first region and a second region in which densities of silicon (Si) and oxygen (O) atoms are higher than in the first region; a compound film that is selectively formed on the Cu wire and contains Cu and Si; and a dielectric film formed on a side surface side of the Cu wire. | 11-19-2009 |
20090289366 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In one aspect of the present invention, a semiconductor device may include an inter-wiring dielectric film in which a wiring trench is formed, a metal wiring layer formed in the wiring trench in the inter-wiring dielectric film, a first barrier layer formed on a side surface of the wiring trench, the first barrier layer being an oxide film made from a metal different from a main constituent metal element in the wiring layer, a second barrier layer formed on a side surface of the wiring layer, the second barrier layer having a Si atom of the metal used in the wiring layer, and a gap formed between the first barrier layer and the second barrier layer. | 11-26-2009 |
20110180309 | INTERCONNECT STRUCTURE EMPLOYING A Mn-GROUP VIIIB ALLOY LINER - A metallic liner stack including at least a Group VIIIB element layer and a CuMn alloy layer is deposited within a trench in a dielectric layer. Copper is deposited on the metallic liner stack and planarized to form a conductive interconnect structure, which can be a metal line, a metal via, or a combination thereof. The deposited copper and the metallic liner stack are annealed before or after planarization. The Mn atoms are gettered by the Group VIIIB element layer to form a metallic alloy liner including Mn and at least one of Group VIIIB elements. Mn within the metallic alloy liner combines with oxygen during the anneal to form MnO, which acts as a strong barrier to oxygen diffusion, thereby enhancing the reliability of the conductive interconnect structure. | 07-28-2011 |
20110189850 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first insulating film is formed on a semiconductor substrate. A first interconnection is formed in a trench formed in the first insulating film. A first barrier film is formed between the first interconnection and first insulating film. A second insulating film is formed on the upper surface of the first interconnection, and in a first hollow portion between the side surface of the first barrier film and the first insulating film. The second insulating film is formed from the upper surface of the first interconnection to a depth higher than the bottom surface of the first interconnection. The first hollow portion is formed below the bottom surface of the second insulating film. | 08-04-2011 |
20110285024 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor structure having a cap layer formed over a metalized dielectric layer is formed by depositing manganese on the surface of the metalized dielectric layer. The deposited manganese serves as a first cap layer to remove oxidation on the surface of the metalized dielectric layer. The presence of oxidation on the surface of the metalized dielectric layer can be delirious for performance of a device constructed out of the semiconductor structure. A second cap layer is then formed by depositing silicon carbide or nitrogen enriched silicon carbide over the first cap layer. | 11-24-2011 |
20130178058 | INTERCONNECT STRUCTURE EMPLOYING A Mn-GROUP VIIIB ALLOY LINER - A metallic liner stack including at least a Group VIIIB element layer and a CuMn alloy layer is deposited within a trench in a dielectric layer. Copper is deposited on the metallic liner stack and planarized to form a conductive interconnect structure, which can be a metal line, a metal via, or a combination thereof. The deposited copper and the metallic liner stack are annealed before or after planarization. The Mn atoms are gettered by the Group VIIIB element layer to form a metallic alloy liner including Mn and at least one of Group VIIIB elements. Mn within the metallic alloy liner combines with oxygen during the anneal to form MnO, which acts as a strong barrier to oxygen diffusion, thereby enhancing the reliability of the conductive interconnect structure. | 07-11-2013 |
Patent application number | Description | Published |
20080204488 | Liquid Ejection Device - A liquid ejection device of a first aspect of the invention comprises a sub tank capable of fluid communicating with the main tank removably mountable to the liquid ejection device. The sub tank is configured to satisfy the formula: S | 08-28-2008 |
20080204506 | Liquid Droplet Ejecting Apparatus - A liquid droplet ejecting apparatus comprises an ejecting head including a passage which is connected to a sub-tank and an ejecting pressure applying device which applies a feed pressure to the liquid inside the passage, a main tank detector which detects that a main tank is mounted to a main tank mounting portion, a suction pump which applies a negative pressure to an air layer inside the sub-tank to discharge air from inside the sub-tank to outside, and a controller configured to control the suction pump and the ejecting pressure applying device, based on information from the main tank detector. The controller causes the suction pump to discharge the air from inside the sub-tank to outside and causes the ejecting pressure applying device to eject the liquid from a nozzle, when the main tank detector detects that the main tank is mounted to the main tank mounting portion. | 08-28-2008 |
20080212143 | Image recording apparatus and method for restoring recording head for image recording apparatus - An image recording apparatus includes a manuscript reader which reads a manuscript to generate image data; a recording head which has nozzles for discharging an ink and which discharges the ink from the nozzles to record an image on a recording medium based on the image data; a restoring mechanism which performs a restoring operation for restoring a discharge state of the nozzles; a controller which controls the manuscript reader and the restoring mechanism; and an instruction receiver which receives an instruction to generate the image data by reading the manuscript and record the image based on the image data. If the instruction receiver receives the instruction, the controller controls the manuscript reader to execute reading of the manuscript, and the controller controls the restoring mechanism based on a time at which the instruction is received to execute the restoring operation. | 09-04-2008 |