Matagne
Alain Matagne, Gerpinnes BE
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20100222576 | 2-Oxo-1-pyrrolidine derivatives, processes for preparing them and their uses - The invention concerns 2-oxo- | 09-02-2010 |
Alain Matagne, Brussels BE
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20120171125 | Methods for Enhancing the Cognitive Function - A compound having an affinity to a SV2 protein for the treatment of a condition associated with enhancement or improvement of the cognitive ability or to counteract cognitive decline of a mammal. For example, a compound which is covered by formula (I) R | 07-05-2012 |
Ernest Matagne, Bovesse BE
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20150136192 | Thermoelectric Conversion Module and Method for Making it - According to a first aspect, the invention relates to a thermoelectric module ( | 05-21-2015 |
James D. Matagne, Sequim, WA US
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20110228463 | Laptop Back-to-Back Display Screen System for Face-to-Face Interactions - Computer display systems comprising back-to-back (BTB) dual screens that render the same display simultaneously on a primary and a slaved secondary screen, for face-to-face inter-active and collaborative purposes, inter alia, for education, sales, presentation, and collaboration between two or more persons. The inventive system is particularly suitable for laptop and netbook types of computers, and a wide range of integrated and accessory BTB dual-screen configurations are disclosed. The secondary screen can be rotated between the BTB dual screen collaborative orientation to an SBS GEM configuration for multi-screen display only to the user. | 09-22-2011 |
Philippe Matagne, Beaverton, OR US
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20090075445 | Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress - A transistor may be formed of different layers of silicon germanium, a lowest layer having a graded germanium concentration and upper layers having constant germanium concentrations such that the lowest layer is of the form Si | 03-19-2009 |
Philippe Matagne, Nandrin BE
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20160071892 | DOPANT CONFIGURATION IN IMAGE SENSOR PIXELS - An image sensor pixel including a photodiode includes a first dopant region disposed within a semiconductor layer and a second dopant region disposed above the first dopant region and within the semiconductor layer. The second dopant region contacts the first dopant region and the second dopant region is of an opposite majority charge carrier type as the first dopant region. A third dopant region is disposed above the first dopant region and within the semiconductor layer. The third dopant region is of a same majority charge carrier type as the second dopant region but has a greater concentration of free charge carriers than the second dopant region. A transfer gate is positioned to transfer photogenerated charge from the photodiode. The second dopant region extends closer to an edge of the transfer gate than the third dopant region. | 03-10-2016 |