Patent application number | Description | Published |
20090182169 | METHOD OF CRYSTALLIZATION - The present invention relates to a multi-stage crystallization process which comprises the steps of feeding a solution of terephthalic acid or a slurry (raw slurry) containing terephthalic acid partially precipitated to a first crystallization vessel to precipitate the terephthalic acid therein; and feeding a slurry (crystallization slurry) containing the thus precipitated terephthalic acid sequentially to second and subsequent crystallization vessels, wherein while continuously supplying a cleaning solvent to a delivery conduit connecting the former-stage crystallization vessel and the next latter-stage crystallization vessel to each other, the crystallization slurry is fed through the delivery conduit. There is provided a multi-stage crystallization process using a solution of terephthalic acid or a slurry containing terephthalic acid partially precipitated as a raw material in which even when the process is operated for a period as long as several months, the delivery conduit is free from occurrence of clogging. | 07-16-2009 |
20100004484 | METHOD OF REPLACING DISPERSION MEDIUM - A method of replacing a first dispersion medium in a starting slurry composed of the first dispersion medium and isophthalic acid crystals with a second dispersion medium. The starting slurry is tangentially fed to a vertically extending cylindrical portion of a cyclone-shaped nozzle disposed at an upper portion of a replacement tank of a dispersion medium replacement apparatus, from a tangential direction of the cylindrical portion. The fed starting slurry moves circularly along an inner wall of the cylindrical portion. The slurry circularly moving is then discharged from an opening which is disposed at a vertically lower end of the cylindrical portion and dispersed in a second dispersion medium which is fed from a lower portion of the replacement tank. The replaced slurry composed of isophthalic acid crystals and the second dispersion medium is mainly discharged from the lower portion of the replacement tank, and the first dispersion medium is mainly withdrawn from the upper portion of the replacement tank. | 01-07-2010 |
20100012887 | Method of Replacing Dispersion Medium - A method of replacing a first dispersion medium in a starting slurry composed of the first dispersion medium and a terephthalic acid crystal with a second dispersion medium. The starting slurry is tangentially fed to a vertically extending cylindrical portion of a cyclone-shaped nozzle disposed at an upper portion of a replacement tank of a dispersion medium replacement apparatus, from a tangential direction of the cylindrical portion. The fed starting slurry moves circularly along an inner wall of the cylindrical portion. The slurry circularly moving is then discharged from an opening which is disposed at a vertically lower end of the cylindrical portion and dispersed in a second dispersion medium which is fed from a lower portion of the replacement tank. The replaced slurry composed of the terephthalic acid crystal and the second dispersion medium is mainly discharged from the lower portion of the replacement tank, and the first dispersion medium is mainly withdrawn from the upper portion of the replacement tank. | 01-21-2010 |
20100016629 | PROCESS FOR PRODUCTION OF TEREPHTHALIC ACID - The invention provides a method for producing terephthalic acid, characterized by including subjecting a p-phenylene compound to liquid-phase oxidation reaction by use of a molecular-oxygen-containing gas in the presence of a catalyst at least containing a heavy metal compound and a bromine compound, and hydrous acetic acid having a water content of 1 to 15 mass %, to thereby yield a slurry; regulating the temperature of the slurry to 35 to 140° C., to thereby cause terephthalic acid to precipitate; removing the terephthalic acid through solid-liquid separation, to thereby recover a mother liquor; and recovering the catalyst from the mother liquor through a series of the following steps (1) to (4) for reusing at least a portion of the catalyst in the liquid-phase oxidation reaction: (1) an adsorption step including regulating the ratio “amount by mole of bromide ions in the mother liquor/total amount by mole of heavy metal ions in the mother liquor” to 0.6 to 3, and then exposing the mother liquor to a pyridine-ring-containing chelate resin which has been heated to 35 to 140° C., so that the resin adsorbs catalyst-derived heavy metal ions and bromide ions, and also adsorbs a carboxylic acid mixture which has been by-produced through the liquid-phase oxidation reaction, (2) an elution step (A) of exposing hydrous acetic acid having a water content of 1 to 15 mass % to the pyridine-ring-containing chelate resin which has undergone the adsorption step, thereby yielding an eluate containing the by-produced carboxylic acid mixture, (3) an elution step (B) of exposing water or hydrous acetic acid having a water content of 20 mass % or more to the pyridine-ring-containing chelate resin which has undergone the elution step (A), thereby yielding an eluate containing catalyst-derived heavy metal ions and bromide ions, and (4) a displacement step of exposing hydrous acetic acid having a water content of 1 to 15 mass % to the pyridine-ring-containing chelate resin which has undergone the elution step (B), serving as a displacement liquid, thereby regenerating the resin. | 01-21-2010 |
20100048943 | PROCESS FOR PRODUCTION OF ISOPHTHALIC ACID - The invention provides a method for producing isophthalic acid, characterized by including subjecting a m-phenylene compound to liquid-phase oxidation reaction by use of a molecular-oxygen-containing gas in the presence of a catalyst at least containing a heavy metal compound and a bromine compound, and hydrous acetic acid having a water content of 1 to 15 mass %, to thereby yield a slurry; regulating the temperature of the slurry to 35 to 140° C., to thereby cause isophthalic acid to precipitate; removing the isophthalic acid through to solid-liquid separation to thereby recover a mother liquor; and recovering the catalyst from the mother liquor through a series of the following steps (1) to (4) for reusing at least a portion of the catalyst in the liquid-phase oxidation reaction: (1) an adsorption step including regulating the ratio “amount by mole of bromide ions in the mother liquor/total amount by mole of heavy metal ions in the mother liquor” to 0.3 to 3, and then exposing the mother liquor to a pyridine-ring-containing chelate resin which has been heated to 35 to 140° C., so that the resin adsorbs catalyst-derived heavy metal ions and bromide ions, and also adsorbs a carboxylic acid mixture which has been by-produced through the liquid-phase oxidation reaction, (2) an elution step (A) of exposing hydrous acetic acid having a water content of 1 to 15 mass % to the pyridine-ring-containing chelate resin which has undergone the adsorption step, thereby yielding an eluate containing the by-produced carboxylic acid mixture, (3) an elution step (B) of exposing water or hydrous acetic acid having a water content of 20 mass % or more to the pyridine-ring-containing chelate resin which has undergone the elution step (A), thereby yielding an eluate containing catalyst-derived heavy metal ions and bromide ions, and (4) a displacement step of exposing hydrous acetic acid having a water content of 1 to 15 mass % to the pyridine-ring-containing chelate resin which has undergone the elution step (B), serving as a displacement liquid, thereby regenerating the resin. | 02-25-2010 |
20110213180 | PROCESS FOR PRODUCTION OF ISOPHTHALIC ACID - A method for producing isophthalic acid, comprising:
| 09-01-2011 |
20110213181 | PROCESS FOR PRODUCTION OF TEREPHTHALIC ACID - A method for producing terephthalic acid comprising:
| 09-01-2011 |
20120322929 | PRETREATMENT METHOD FOR CHELATE RESIN HAVING PYRIDINE RING USED FOR COLLECTING CATALYST IN TEREPHTHALIC ACID PRODUCTION PROCESS - In pretreating a pyridine ring-containing chelate resin which is used in the step for adsorption and collection of a heavy metal ion and a bromide ion derived from a catalyst from the oxidation reaction mother liquid in the process of producing a terephthalic acid, there may occur phenomena such as swelling of the resin, heat generation of the resin, and air bubbles generation, thereby causing fracture and deterioration of the resin. As a first treatment, Br | 12-20-2012 |
20120326082 | PRETREATMENT METHOD FOR CHELATE RESIN HAVING PYRIDINE RING USED FOR COLLECTING CATALYST IN AROMATIC CARBOXYLIC ACID PRODUCTION PROCESS - In pretreating a pyridine ring-containing chelate resin which is used in the step for adsorption and collection of a heavy metal ion and a bromide ion derived from a catalyst from the oxidation reaction mother liquid in the process of producing an aromatic carboxylic acid, there may occur phenomena such as swelling of the resin, heat generation of the resin, and air bubbles generation, thereby causing fracture and deterioration of the resin. As a first treatment, Br | 12-27-2012 |
20120328483 | METHOD OF REPLACING DISPERSION MEDIUM AND APPARATUS THEREFOR - A method of replacing a first dispersion medium, in a starting slurry composed of the first dispersion medium and either terephthalic acid crystals or isophthalic acid crystals, with a second dispersion medium, and apparatus therefore. The starting slurry is tangentially fed to a vertically extending cylindrical portion of a cyclone-shaped nozzle disposed at an upper portion of a replacement tank of a dispersion medium replacement apparatus, from a tangential direction of the cylindrical portion, and moves circularly along an inner wall of the cylindrical portion. The slurry circularly moving is then discharged from an opening which is disposed at a vertically lower end of the cylindrical portion and dispersed in a second dispersion medium which is fed from a lower portion of the replacement tank. | 12-27-2012 |
20130281732 | CROSSFLOW TYPE FILTERING OPERATION METHOD USING CERAMIC FILTER - Provided is a simple filtering operation method capable of conducting a filtering operation without clogging in a ceramic filter for a long period of time, in the operation of filtering fine crystals of terephthalic acid in an oxidation reaction mother liquor obtained in a process of terephthalic acid production by a cross-flow filtration using the ceramic filter. The present invention can be accomplished by conducting an operation for filtering the fine crystals and a back washing operation with a filtrate while maintaining a flowing circulation operation of the oxidation reaction mother liquor under predetermined conditions. | 10-24-2013 |
20130289303 | CROSSFLOW TYPE FILTERING OPERATION METHOD USING CERAMIC FILTER - Provided is a simple filtering operation method capable of conducting a filtering operation without clogging in a ceramic filter for a long period of time, in the operation of filtering fine crystals of an aromatic carboxylic acid in an oxidation reaction mother liquor obtained in a process of an aromatic carboxylic acid production by a cross-flow filtration using the ceramic filter. The present invention can be accomplished by conducting an operation for filtering the fine crystals and a back washing operation with a filtrate while maintaining a flowing circulation operation of the oxidation reaction mother liquor under predetermined conditions. | 10-31-2013 |
Patent application number | Description | Published |
20080237569 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE - The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion. | 10-02-2008 |
20110068360 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE - The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion. | 03-24-2011 |
20110215292 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed. | 09-08-2011 |
20110215293 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film. | 09-08-2011 |
20110220933 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles. | 09-15-2011 |
20110220934 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element. | 09-15-2011 |
20110220935 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The light emitting element having a light extraction surface. The first electrode layer on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface of the light emitting element. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The light emitting element has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer. | 09-15-2011 |
20120043550 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a stacked structural body, first and second electrodes, a high resistance layer and a transparent conductive layer. The stacked structural body includes first and second semiconductor layers and a light emitting layer. The first semiconductor layer is disposed between the first electrode and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the first semiconductor layer. The second electrode has reflectivity with respect to luminescent light. The high resistance layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode and includes a portion overlapping with the first electrode. The transparent conductive layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode. The transparent conductive layer has a resistance lower than a resistance of the high resistance layer. | 02-23-2012 |
20120056154 | METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate. | 03-08-2012 |
20120199811 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film. | 08-09-2012 |
20120217524 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer. | 08-30-2012 |
20120319161 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE WAFER - According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness. | 12-20-2012 |
20130059408 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed. | 03-07-2013 |
20130153922 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate and a light extraction surface. The first electrode layer is provided on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, first conductive type semiconductor layer, and second conductive type semiconductor layer, and has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer. | 06-20-2013 |
20130234106 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer. | 09-12-2013 |
20130244360 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting element. The method can include bonding a stacked main body of a structural body to a substrate main body. The structural body includes a growth substrate and the stacked main body provided on the growth substrate. The stacked main body includes a first nitride semiconductor film, a light emitting film provided on the first nitride semiconductor film, and a second nitride semiconductor film provided on the light emitting film. The method can include removing the growth substrate. The method can include forming a plurality of stacked bodies. The method can include forming an uneven portion in a surface of a first nitride semiconductor layer. The method can include forming a plurality of the semiconductor light emitting elements. | 09-19-2013 |
20130328055 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first, second and third semiconductor layers, and a light emitting layer. The first semiconductor layer of a first conductivity type is provided on the first electrode. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer of a second conductivity type is provided on the light emitting layer. The third semiconductor layer with low impurity concentration is provided on a part of the second semiconductor layer. The second electrode includes a pad section and a narrow wire section. The pad section is provided on the third semiconductor layer. The narrow wire section extends out from the pad section and includes an extending portion extending along a plane perpendicular to a stacking direction. The narrow wire section is in contact with the second semiconductor layer. | 12-12-2013 |
20130328075 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first and second semiconductor layers and a light emitting layer. The first electrode includes a first region, a second region, and a third region provided between them. The first semiconductor layer includes a first portion on the first region and a second portion on the second region. The light emitting layer includes a third portion on the first portion and a fourth portion on the second portion. The second semiconductor layer includes a fifth portion on the third portion and a sixth portion on the fourth portion. The insulating layer is provided between the first and second portions on the third region and between the third and fourth portions. The second electrode includes a seventh portion provided on the insulating layer, eighth and ninth portions contacting side surfaces of the fifth and sixth portions. | 12-12-2013 |
20140048769 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed. | 02-20-2014 |
20140048819 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer. | 02-20-2014 |
20140252395 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer. | 09-11-2014 |
20140319458 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed. | 10-30-2014 |
Patent application number | Description | Published |
20080205916 | IMAGE FORMING APPARATUS AND IMAGE CONTROL METHOD - An image forming apparatus | 08-28-2008 |
20080247769 | IMAGE FORMING APPARATUS - An image forming apparatus capable of keeping reproducibility and gradation in balance and outputting high-quality images. A primary electrostatic charger charges a photosensitive drum. A polygon scanner irradiates the drum with a laser beam to form an electrostatic latent image on the drum. A developing device develops the latent image into a toner image by applying a developing bias to the drum. In performing development by the developing device at a preset environmental contrast potential, a CPU determines a required contrast potential for obtaining a target maximum density. The CPU compares between the environmental contrast potential and the required contrast potential. Further, the CPU sets an upper limit value for a set contrast potential to be set to the developing device according to the result of the comparison, and sets an output level of the laser light to be output from the developing device. | 10-09-2008 |
20090016753 | IMAGE FORMING APPARATUS AND CONTROL METHOD THEREFOR - An image forming apparatus which improves the degree of freedom for changing the shape, diameter, light intensity distribution of the section of a laser beam. Emission of the plurality of lasers provided in a light source unit is separately controlled based on image data of one pixel. The laser lights emitted from the plurality of lasers are focused and a laser beam is formed. Exposure scanning of a photosensitive body is performed by the laser beam. A light emission pattern of the plurality of lasers is changed according to image data of each pixel. | 01-15-2009 |
20090245821 | IMAGE FORMING APPARATUS AND IMAGE CONTROL METHOD - An image forming apparatus | 10-01-2009 |
20100315685 | APPARATUS THAT PERFORMS CALIBRATION FOR MAINTAINING IMAGE QUALITY - To add an arbitrary recording medium as a recording medium that can be used for calibration to maintain the quality of an image to be formed, an image forming unit forms a pattern image on each of a specific recording medium that can be used for the calibration and the arbitrary recording medium. A creating unit creates second conversion setting information applied to the arbitrary recording medium to convert luminance information into density information, using first luminance information obtained from the pattern image formed on the specific recording medium, second luminance information obtained from the pattern image formed on the arbitrary recording medium, and first conversion setting information applied to the specific recording medium for converting luminance information into density information. A determining unit determines a common image formation condition applied to the specific recording medium and the arbitrary recording medium based on the second conversion setting information. | 12-16-2010 |
20110193923 | IMAGE FORMING APPARATUS - Restricting a screen line number to prevent degradation in graininess depending on the type of recording paper causes a problem in which the image quality of output matter deteriorates. An image forming apparatus according to the present invention changes an exposure area for one pixel used in image formation in accordance with recording paper in consideration of differences in the influence of the height of toner on graininess depending on recording paper. | 08-11-2011 |
20140185071 | APPARATUS THAT PERFORMS CALIBRATION FOR MAINTAINING IMAGE QUALITY - To add an arbitrary recording medium as a recording medium that can be used for calibration to maintain the quality of an image to be formed, an image forming unit forms a pattern image on each of a specific recording medium that can be used for the calibration and the arbitrary recording medium. A creating unit creates second conversion setting information applied to the arbitrary recording medium to convert luminance information into density information, using first luminance information obtained from the pattern image formed on the specific recording medium, second luminance information obtained from the pattern image formed on the arbitrary recording medium, and first conversion setting information applied to the specific recording medium for converting luminance information into density information. A determining unit determines a common image formation condition applied to the specific recording medium and the arbitrary recording medium based on the second conversion setting information. | 07-03-2014 |
Patent application number | Description | Published |
20120019845 | IMAGE FORMING APPARATUS WHICH PERFORMS CALIBRATION FOR MAINTAINING IMAGE QUALITY - A luminance value for a second printing medium that has been obtained by reading a pattern image formed on the second printing medium different from a first printing medium is converted into a corresponding density value on the first printing medium. Calibration for the first printing medium can then be performed using the second printing medium. | 01-26-2012 |
20120020680 | IMAGE FORMING APPARATUS WHICH PERFORMS CALIBRATION FOR MAINTAINING IMAGE QUALITY - An image forming apparatus forms a pattern image on a first printing medium and creates a first image processing condition for adjusting a tone characteristic based on a first luminance value. When performing the calibration using a second printing medium different from the first printing medium, the apparatus corrects, based on a luminance value of a background region of the second printing medium, a second luminance value output in accordance with light reflected by the second printing medium, and creates the first image processing condition based on the corrected second luminance value. | 01-26-2012 |
20120033276 | IMAGE FORMING APPARATUS WHICH PERFORMS CALIBRATION FOR MAINTAINING IMAGE QUALITY - A reader unit A reads a pattern image formed on a first printing medium to obtain a first luminance value. A color processing unit converts into a density value using first conversion information. CPU creats an image processing condition LUTa based on the density value. A photo sensor reads a pattern image formed on an image carrier. CPU corrects LUTa based on a density value of the pattern image read by photo sensor. A printer unit forms a pattern image on a second printing medium different using the corrected LUTa. CPU determines second conversion information for the second printing medium based on a second luminance value from the pattern image on the second printing medium, the first luminance value and the first conversion information. | 02-09-2012 |
20120163850 | IMAGE FORMING APPARATUS - An image forming apparatus includes an image forming unit, a decision unit, an output unit, a control unit, and a setting unit. The image forming unit forms an image on an image bearing member. The decision unit decides a first image forming condition of the image forming unit for forming the image at a width that is wider than a predetermined width. The output unit outputs a signal in accordance with the thickness of the image. The control unit causes the image forming unit to form a measurement image having a width that is narrower than or equal to the predetermined width. The setting unit sets a second image forming condition of the image forming unit so that the thickness of the image that is narrower than or equal to the predetermined width becomes thinner than or equal to the predetermined thickness. | 06-28-2012 |
20120201554 | IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD OF ELECTROPHOTOGRAPHY - An image forming apparatus that is capable of reducing a sequential variation of graininess and keeping imaging quality. An exposure unit exposes the photoconductor to a light beam to form an electrostatic latent image. A development unit develops the electrostatic latent image with a toner. A change unit changes a height of toner image by changing an exposure spot area of the light beam on the photoconductor. A formation unit forms test patterns corresponding to different exposure spot areas on a recording sheet. A read unit reads the test patterns. A control unit detects graininess of each test pattern based on information about the test patterns read by the read unit, determines an exposure spot area where the graininess becomes good relatively, and controls the height of toner image on the photoconductor by setting the exposure spot area determined so as to be an exposure spot area for image formation. | 08-09-2012 |
20120294643 | IMAGE FORMING APPARATUS - An image forming apparatus includes a conveyance unit to convey an image carrier and an image forming unit to form an image on the image carrier. The image forming apparatus also includes a first determining unit, a control unit, an irradiation unit, an output unit, and a second determining unit. The first determining unit determines a first image forming condition of the image forming unit for forming a heavy line image at a particular width and thickness. The control unit causes the image forming unit to form a first measurement image having a particular width and length. The irradiation unit emits light onto the image carrier. The output unit outputs a first signal corresponding to a thickness of the first measurement image by receiving reflected light. The second determining unit determines a second image forming condition for forming a fine line image at a particular width and thickness. | 11-22-2012 |
20120314227 | IMAGE FORMING APPARATUS IN WHICH TONE CORRECTION SETTING IS CONTROLLED - An apparatus includes a forming unit; a reading unit; a conversion unit converting a signal corresponding to the image read by the reading unit into a signal indicating a density value; a correction unit performing tone correction on the density value of the signal output by the conversion unit; and a control unit controlling a tone correction setting in the tone correction unit by controlling the reading unit to read a tone correction image that was formed on a recording material by the forming unit. When controlling the tone correction setting, the control unit further changes a setting for image formation in the forming unit and a setting for conversion into a density value in the conversion unit according to the recording material used in the control of the tone correction setting. | 12-13-2012 |
20120315055 | IMAGE FORMING APPARATUS - In an apparatus which forms an adjustment toner image outside an image area in a direction orthogonal to a moving direction of an image bearing member, a toner change amount of the adjustment toner image which is directly transferred onto and adheres to a transfer roller without interposing a recording medium differs depending on a transfer electric field. Since the transfer electric field is in a direction for reversing a charging polarity of the toner, when the transfer electric field is large, the toner charge amount of the adjustment toner image is reduced. Therefore, in case that the transfer electric field is large, the cleaning electric field is set small. Thereby the toner of the adjustment toner image can be sufficiently cleaned off by an electrostatic cleaning member irrespective of the transfer voltage, and contamination on a back side of a recording material can be avoided. | 12-13-2012 |
20120321331 | IMAGE FORMING APPARATUS FOR DETECTING THICKNESS AND AREA RATIO OF TONER LAYER - An image forming apparatus includes an image forming unit having an exposure unit and a developing unit; a detection unit configured to detect a thickness and an area ratio of a toner layer of a pattern image formed by the image forming unit; a storage unit configured to store data indicating permissible ranges for the thickness and the area ratio of the toner layer; and a correction unit configured to change, when the thickness or the area ratio of the toner layer detected by the detection unit falls outside the corresponding permissible range indicated by the data stored in the storage unit, a spot diameter of the laser beam so that the thickness and the area ratio of the toner layer respectively fall within the permissible ranges. | 12-20-2012 |
20130016365 | IMAGE FORMING APPARATUS FORMING IMAGES IN ACCORDANCE WITH IMAGE FORMING CONDITIONSAANM Zaima; NobuhikoAACI Kashiwa-shiAACO JPAAGP Zaima; Nobuhiko Kashiwa-shi JP - A processor determines a combination of the result of a comparison between a statistical value indicating the graininess of small dots and a predetermined reference value SDa and the result of a comparison between a statistical value indicating the graininess of large dots and a predicted value SDp. This combination shows which factors degrade image quality and which image forming conditions should be corrected and to what extent. Thus, the processor selects the image forming conditions to be corrected based on a combination of these comparison results, determines their correction values, and corrects the selected image forming conditions using the correction values. This makes it possible to properly correct the image forming conditions that correspond to the factors affecting image quality. | 01-17-2013 |
20130034359 | ADJUSTMENT OF IMAGE DENSITY IN IMAGE FORMING APPARATUS - An image forming apparatus configures a normal transfer potential in a yellow primary transfer unit, and configures a transfer potential which does not cause any retransfer phenomenon of a yellow measurement image in image carriers located on the downstream side of the yellow primary transfer unit. When a color difference obtained from a reference density and a density of a measurement image on an intermediate transfer belt becomes equal to or larger than a prescribed value, the image forming apparatus determines that multinary-color density adjustment is required. | 02-07-2013 |
20130208069 | IMAGE FORMING APPARATUS FOR PERFORMING EXPOSURE A PLURALITY OF TIMES - An image forming apparatus includes; an exposure unit configured to perform, based on the image data, first exposure for a photosensitive member and second exposure for the photosensitive member exposed by the first exposure; a determination unit configured to determine a type of the image to be formed based on image data; and a control unit configured to control the exposure unit such that a difference in an exposure amount between the first exposure and the second exposure performed based on the image data when the type of the image is a character is larger than the difference in the exposure amount between the first exposure and the second exposure performed based on the image data when the type of the image is a picture. | 08-15-2013 |
20140036020 | IMAGE FORMING APPARATUS HAVING PHOTOSENSITIVE MEMBER EXPOSED TO PLURAL BEAMS, AND CONTROL APPARATUS FOR LIGHT SOURCE OF IMAGE FORMING APPARATUS - An image forming apparatus capable of suppressing density unevenness of a toner image formed on a photosensitive member. A light amount of a light beam that exposes an end portion of the photosensitive member is made different from a light amount of a light beam that exposes a central portion thereof in order to suppress a density difference between a toner image density at the central portion of the photosensitive member and that at the end portion thereof in a scanning direction of the light beams. | 02-06-2014 |
20140363183 | IMAGE FORMING APPARATUS FOR PERFORMING EXPOSURE A PLURALITY OF TIMES - An image forming apparatus includes; an exposure unit configured to perform, based on the image data, first exposure for a photosensitive member and second exposure for the photosensitive member exposed by the first exposure; a determination unit configured to determine a type of the image to be formed based on image data; and a control unit configured to control the exposure unit such that a difference in an exposure amount between the first exposure and the second exposure performed based on the image data when the type of the image is a character is larger than the difference in the exposure amount between the first exposure and the second exposure performed based on the image data when the type of the image is a picture. | 12-11-2014 |
20150092206 | IMAGE FORMING APPARATUS WHICH PERFORMS CALIBRATION FOR MAINTAINING IMAGE QUALITY - An image forming apparatus includes a correcting unit that corrects image data using a tone correction condition. An image forming unit forms an image on a printing medium based on the corrected image data. An obtaining unit obtains read data by a reading unit reading a pattern image formed on the medium by the image forming unit. A converting unit converts the read data into density data using a converting condition corresponding to the printing medium. A first creating unit creates the tone correction condition based on the density data converted by the converting unit. A second creating unit controls the correcting unit to correct the patch data using the tone correction condition created by the first creating unit, controls the image forming unit to form a patch image on another printing medium based on the corrected patch data, and creates the converting condition corresponding to the other printing medium. | 04-02-2015 |
20150098095 | IMAGE FORMING APPARATUS THAT PERFORMS CALIBRATION FOR MAINTAINING IMAGE QUALITY - A first conversion condition converts read data of a measurement image on a specific recording medium to density data on the specific recording medium. A second conversion condition converts read data of the measurement image on another recording medium to density data on the specific recording medium. A generation unit controls an image forming unit to form a first pattern on the specific recording medium and form a second pattern on the other recording medium, and generates the second conversion condition corresponding to the other recording medium using first read data, second read data, and the first conversion condition stored in a storage unit. The first read data is obtained by reading the first pattern on the specific recording medium, and the second read data is obtained by reading the second pattern on the other recording medium. | 04-09-2015 |