Patent application number | Description | Published |
20100219496 | WAFER ARRANGEMENT AND A METHOD FOR MANUFACTURING THE WAFER ARRANGEMENT - The wafer arrangement ( | 09-02-2010 |
20110012090 | SILICON-GERMANIUM NANOWIRE STRUCTURE AND A METHOD OF FORMING THE SAME - A silicon-germanium nanowire structure arranged on a support substrate is disclosed, The silicon-germanium nanowire structure includes at least one germanium-containing supporting portion arranged on the support substrate, at least one germanium-containing nanowire disposed above the support substrate and arranged adjacent the at least one germanium-containing supporting portion, wherein germanium concentration of the at least one germanium-containing nanowire is higher than the at least one germanium-containing supporting portion. A transistor comprising the silicon-germanium nanowire structure arranged on a support substrate is also provided. A method of forming a silicon-germanium nanowire structure arranged on a support substrate and a method of forming a transistor comprising forming the silicon-germanium nanowire structure arranged on a support substrate are also disclosed. | 01-20-2011 |
20110147870 | PHOTODETECTOR WITH VALENCE-MENDING ADSORBATE REGION AND A METHOD OF FABRICATION THEREOF - According to an embodiment, a photodetector is provided, including a detector region, a first contact region forming an interface with the detector region, and a first valence mending adsorbate region between the first contact region and the detector region. | 06-23-2011 |
20110149285 | OPTICAL RESONATOR AND OPTICAL SENSING SYSTEM COMPRISING THE SAME - An embodiment of the invention relates to an optical resonator. The optical resonator includes an input optical waveguide and a closed loop coupled to the input optical waveguide. The closed loop is adapted to receive light from the input optical waveguide, wherein the closed loop includes at least one hole formed within a portion of the closed loop. | 06-23-2011 |
20110180795 | ELECTRO-OPTIC DEVICE AND A METHOD FOR MANUFACTURING THE SAME - An electro-optic device is disclosed. The electro-optic device includes an insulating layer, a first semiconducting region disposed above the insulating layer and being doped with doping atoms of a first conductivity type, a second semiconducting region disposed above the insulating layer and being doped with doping atoms of a second conductivity type and an electro-optic active region disposed above the insulating layer and between the first semiconducting region and the second semiconducting region. The electro-optic active region includes a first semiconducting partial active region being doped with doping atoms of the first conductivity type, a second semiconducting partial active region being doped with doping atoms of the second conductivity type and an insulating structure between the first semiconducting partial active region and the second semiconducting partial active region, wherein the insulating structure extends perpendicular to the surface of the insulating layer such that there is no overlap of the first semiconducting partial active region and the second semiconducting partial active region in the direction perpendicular to the surface of the insulating layer. A method for manufacturing an electro-optic device is also disclosed. | 07-28-2011 |
20110317972 | Optical device, optical arrangement and optical element holder - Embodiments provide an optical device including a carrier; a light source; a receiving chamber in or on the carrier wherein the receiving chamber is configured to receive an optical element; the optical element received in the receiving chamber; a plurality of actuators; and a waveguide arranged to receive light transmitted from the light source through the optical element. At least one of the receiving chamber and the actuators is arranged and configured to adjust the position of the optical element in the receiving chamber in a first direction perpendicular to the main surface of the carrier and in a second direction in-plane with the main surface of the carrier. | 12-29-2011 |
20120043527 | LIGHT EMITTING DEVICE - According to embodiments of the present invention, a light emitting device is provided. The light emitting device includes: an active region comprising at least one p-i-n junction, the at least one p-i-n junction comprising a p-doped region, an intrinsic region and an n-doped region; a first contact; and a second contact, wherein the active region is disposed between the first contact and the second contact; and wherein a voltage applied to the first contact and the second contact produces a current configured to flow between the first contact and the second contact in a direction substantially parallel to a surface of the intrinsic region of the active region configured to emit a light. According to embodiments of the present invention, the intrinsic region includes a multiple quantum well (MQW) such that a current injected flows laterally in a direction substantially parallel to the surface of the wells of the MQW. | 02-23-2012 |
20120189239 | OPTICAL MODULATOR AND A METHOD OF FORMING THE SAME - According to embodiments of the present invention, an optical modulator is provided. The optical modulator includes a depletion region comprising a junction between from a first conductivity type portion and a second conductivity type portion, a first intrinsic region, and a second intrinsic region, and wherein the depletion region is disposed between the first intrinsic region and the second intrinsic region. | 07-26-2012 |
20120194803 | Optical Sensing System And A Method Of Determining A Change In An Effective Refractive Index Of A Resonator Of An Optical Sensing System - According to embodiments of the present invention, an optical sensing system is provided. The optical sensing system includes a resonator arrangement including a first resonator, wherein an effective refractive index of the first resonator is changeable in response to a change in a refractive index of a cladding of the first resonator, and a second resonator to which a current or voltage being adjustable in response to a change in the effective refractive index of the first resonator is applied, wherein the optical sensing system is configured to determine the change in the effective refractive index of the first resonator based on a change in the current or voltage applied to the second resonator. Further embodiments provide a method of determining a change in an effective refractive index of a resonator of an optical sensing system. | 08-02-2012 |
20120201488 | Phase Shifting Device and a Method for Manufacturing the Same - In an embodiment, a phase shifting device may be provided. The phase shifting device may include a supporting layer and a semiconducting layer disposed above the supporting layer. The semiconducting layer may include a first doped region doped with doping atoms of a first conductivity type and arranged on the supporting layer; and a second doped region doped with doping atoms of a second conductivity type being different from the first conductivity type; wherein the second doped region may be disposed over the first doped region such that a first doped regions junction may be formed in a direction substantially parallel to a surface of the supporting layer and a second doped regions junction may be formed in a direction substantially perpendicular to the surface of the supporting layer. A method of forming a phase shifting device and an electro-optic device may also be provided. | 08-09-2012 |
20120280345 | PHOTODETECTOR AND A METHOD OF FORMING THE SAME - According to embodiments of the present invention, a photodetector is provided. The photodetector includes a substrate, a waveguide formed on a surface of the substrate, a first metal layer formed on a first side of the waveguide, wherein a first interface is defined between the waveguide and the first metal layer, and a silicide layer formed on a second side of the waveguide, wherein a second interface is defined between the waveguide and the silicide layer, and wherein the second side is opposite to the first side, and wherein at least one of the first interface and the second interface is at least substantially perpendicular to the surface of the substrate. Various embodiments further provide a method of forming the photodetector. | 11-08-2012 |
20120328243 | Optical Converter and Method of Manufacturing the Same - An optical converter and a method of manufacturing the optical converter are provided. The optical converter may include a signal receiving portion configured to receive an optical signal from an optical fiber which can be coupled to the optical converter, a signal output portion configured to output the optical signal received by the signal receiving portion, and a signal coupling portion being disposed between the signal receiving portion and the signal output portion and being configured to couple the optical signal received by the signal receiving portion into the signal output portion. The signal output portion may include a waveguide element having at least one tapered end section, and being partially or wholly surrounded by the signal coupling portion. The at least one tapered end section may be configured to couple the optical signal from the signal coupling portion into the waveguide element and the waveguide element may be configured to output the optical signal. | 12-27-2012 |
20130071058 | Optical Modulator and Method for Manufacturing the Same - An optical modulator and a method for manufacturing an optical modulator are provided. The optical modulator includes a first waveguide, a second waveguide, a modulating portion connected between the first waveguide and the second waveguide, the modulating portion being configured to receive an input signal from the first waveguide, to modulate the input signal and to supply a corresponding modulated input signal as an output signal to the second waveguide, wherein the modulating portion includes a semiconductor substrate, one end thereof being coupled to the first waveguide, and a corresponding opposite end thereof being coupled to the second waveguide, a Germanium rib provided on the substrate such that the input signal propagates through the Germanium rib along a longitudinal axis thereof, and a first electrode and a second electrode respectively provided on the substrate, wherein the Germanium rib is provided between the first electrode and the second electrode, and wherein the first electrode and the second electrode are configured to apply an electrical field to the Germanium rib in order to modulate the input signal propagating through the Germanium rib. | 03-21-2013 |
20130200327 | Resistive Memory Arrangement and a Method of Forming the Same - According to embodiments of the present invention, a resistive memory arrangement is provided. The resistive memory arrangement includes a nanowire, and a resistive memory cell including a resistive layer including a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire, and a conductive layer arranged on at least a part of the resistive layer. According to further embodiments of the present invention, a method of forming a resistive memory arrangement is also provided. | 08-08-2013 |
20130200477 | SEMICONDUCTOR PHOTOMULTIPLIER DEVICE - According to embodiments of the present invention, a semiconductor photomultiplier device is provided. The semiconductor photomultiplier device includes a substrate having a front side and a back side, a common electrode of a first conductivity type adjacent to the back side, and a cell including an active region of a second conductivity type adjacent to the front side, and a contact region of the second conductivity type adjacent to the front side, the contact region being spaced apart from the active region by a separation region. | 08-08-2013 |
20130270508 | Non-Volatile Memory Device and Method of Forming the Same - According to embodiments of the present invention, a non-volatile memory device is provided. The non-volatile memory device includes a nanowire transistor including a nanowire channel, and a resistive memory cell arranged adjacent to the nanowire transistor and in alignment with a longitudinal axis of the nanowire channel. According to further embodiments of the present invention, a method of forming a non-volatile memory device is also provided. | 10-17-2013 |
Patent application number | Description | Published |
20140127842 | METHOD FOR FORMING AN OPTICAL MODULATOR - According to embodiments of the present invention, a method for forming an optical modulator is provided. The method includes providing a substrate, implanting dopants of a first conductivity type into the substrate to form a first doped region, implanting dopants of a second conductivity type into the substrate to form a second doped region, wherein a portion of the second doped region is formed over and overlaps with a portion of the first doped region to form a junction between the respective portions of the first doped region and the second doped region, and wherein a remaining portion of the second doped region is located outside of the junction, and forming a ridge waveguide, wherein the ridge waveguide overlaps with at least a part of the junction. | 05-08-2014 |
20140138789 | P-I-N PHOTODIODE - According to one aspect of the invention, there is provided a pin photodetector comprising a dopant diffusion barrier layer disposed within an active light absorbing region of the pin photodetector. | 05-22-2014 |
20140153600 | Optical Light Source - An optical light source is provided. The optical light source includes a waveguide including two reflectors arranged spaced apart from each other to define an optical cavity therebetween, an optical gain medium, and a coupling structure arranged to couple light between the optical cavity and the optical gain medium. | 06-05-2014 |
20140159180 | SEMICONDUCTOR RESISTOR STRUCTURE AND SEMICONDUCTOR PHOTOMULTIPLIER DEVICE - According to embodiments of the present invention, a semiconductor resistor structure is provided. The semiconductor resistor structure includes a substrate, a first region of a first conductivity type in the substrate, a second region of the first conductivity type in the substrate, the first region and the second region arranged one over the other, and an intermediate region of a second conductivity type in between the first region and the second region, wherein at least one gap is defined through the intermediate region and overlapping with the first region and the second region. According to further embodiments of the present invention, a semiconductor photomultiplier device is also provided. | 06-12-2014 |
20140167200 | PHOTODETECTOR AND METHOD FOR FORMING THE SAME - According to embodiments of the present invention, a photodetector is provided. The photodetector includes a substrate having a first side and a second side opposite to the first side, the substrate being adapted to receive light incident on the photodetector on the first side of the substrate, a plurality of cells formed in the substrate, and at least one trench defined by a first sidewall and a second sidewall, wherein a spacing between the first sidewall and the second sidewall increases in a direction from the first side of the substrate towards the second side, wherein a respective trench of the at least one trench is arranged in between adjacent cells of the plurality of cells. According to further embodiments of the present invention, a method for forming a photodetector is also provided. | 06-19-2014 |