Patent application number | Description | Published |
20110076784 | Fabrication of Magnetic Element Arrays - Techniques for fabricating an array of magnetic elements to form memory and other devices with a high areal density. | 03-31-2011 |
20110102948 | METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES - A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction. | 05-05-2011 |
20110141804 | METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES - A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough. | 06-16-2011 |
20110254585 | METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER BASED LOGIC DEVICES - A method and system for providing a logic device are described. The logic device includes a plurality of magnetic input/channel regions, at least one magnetic sensor region, and at least one sensor coupled with the at least one magnetic sensor region. Each of the magnetic input/channel regions is magnetically biased in a first direction. The magnetic sensor region(s) are magnetically biased in a second direction different from the first direction such that at least one domain wall resides in the magnetic input/channel regions if the logic device is in a quiescent state. The sensor(s) output a signal based on a magnetic state of the magnetic sensor region(s). The input/channel regions and the magnetic sensor region(s) are configured such that the domain wall(s) may move into the magnetic sensor region(s) in response to a logic signal being provided to at least a portion of the magnetic input regions. | 10-20-2011 |
20120170362 | METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES - A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction. | 07-05-2012 |
Patent application number | Description | Published |
20090168268 | Dedicated noncorrosive smear detector - A disk drive head slider for a magnetic disk drive is provided. The head slider includes a tunnel magnetic resistance device for reading data on a magnetic disk and a dedicated noncorrosive smear detector for measuring resistance wherein the resistance corresponds to a level of smear associated with the head slider. | 07-02-2009 |
20140154952 | WAFER GROUNDING DESIGN FOR SINGLE PAD LAPPING - Embodiments described herein generally relate to connecting Electronic Lapping Guides (ELG) to a lapping controller to reduce resistance from current crowding while reducing connections to the ELG. A device and a system can include a wafer with peripheral grounding vias having a radius of at least 10 μm, a plurality of sliders with a magnetoresistive (MR) elements; a plurality of ELG electrically coupled to the lapping controller through a combination of the wafer and grounding pads and a bonding pad electrically coupled to the ELG. The ELG or the bonding pad can be positioned in the kerf or the device region of a row. If the ELG and the bonding pad are positioned in separate regions, a noble metal should be used to connect. Further, the number of grounding pads can be reduced by using grounding vias at specific intervals and specific sizes. | 06-05-2014 |
20140154953 | CORRECTING CURRENT CROWDING IN ROW BAR AND VIAS FOR SINGLE PAD BONDING - Embodiments described herein generally relate to connecting electronic lapping guides (ELGs) to a lapping controller to prevent the effects of current crowding while reducing connections to the ELGs in single pad lapping. Devices and systems can include a row of sliders including a magnetoresistive (MR) element, a plurality of high resistance ELGs connected to both the wafer and to at least one bonding pad and at least two peripheral grounding vias connected to the wafer. Methods and systems include a wafer comprising a plurality of sliders wherein each slider is connected to a lapping controller and the delivery of current to the ELGs is sequential to groups of sliders such that only one group of ELGs is being measured at any time. | 06-05-2014 |
20140175048 | ELECTRICAL LAPPING GUIDE FOR MANUFACTURE OF A SCISSOR STYLE MAGNETIC SENSOR - A method of manufacturing a magnetic sensor having a hard bias structure located at a back edge of the sensor. The method forms an electrical lapping guide that is compatible for use with such a sensor having a back edge hard bias structure and which can accurately determine a termination point for a lapping operation that forms an air bearing surface of the slider and determines the sensor stripe height. | 06-26-2014 |