Mary Y.
Mary Y. Armanios, Ellicott City, MD US
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20100291560 | METHODS AND COMPOSITIONS FOR DIAGNOSIS AND TREATMENT OF DYSKERATOSIS CONGENITA AND RELATED DISORDERS - The present invention features methods of detection, diagnosing a presence or a predisposition to, or determining the risk for a subject to develop telomere-associated diseases or disorders. The methods include detecting the presence or absence of an alteration in a nucleic acid in a sample. The methods also include determining telomere length. In certain cases, average telomere length is a surrogate marker for a telomere-associated disease or disorder. | 11-18-2010 |
Mary Y. Chen, Oak Park, CA US
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20100216301 | FABRICATING A DEVICE WITH A DIAMOND LAYER - In one aspect, a method includes forming a silicon dioxide layer on a surface of a diamond layer disposed on a gallium nitride (GaN)-type layer. The method also includes etching the silicon dioxide layer to form a pattern. The method further includes etching portions of the diamond exposed by the pattern. | 08-26-2010 |
20130001646 | ALGaN/GaN HYBRID MOS-HFET - A field effect transistor (FET) includes source and drain electrodes, a channel layer, a barrier layer over the channel layer, a passivation layer covering the barrier layer for passivating the barrier layer, a gate electrode extending through the barrier layer and the passivation layer, and a gate dielectric surrounding a portion of the gate electrode that extends through the barrier layer and the passivation layer, wherein the passivation layer is a first material and the gate dielectric is a second material, and the first material is different than the second material. | 01-03-2013 |
Mary Y. Chen, Beverly Hills, CA US
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20150349117 | III-NITRIDE INSULATING-GATE TRANSISTORS WITH PASSIVATION - A field-effect transistor (FET) includes a plurality of semiconductor layers, a source electrode and a drain electrode contacting one of the semiconductor layers, a first dielectric layer on a portion of a top semiconductor surface between the source and drain electrodes, a first trench extending through the first dielectric layer and having a bottom located on a top surface or within one of the semiconductor layers, a second dielectric layer lining the first trench and covering a portion of the first dielectric layer, a third dielectric layer over the semiconductor layers, the first dielectric layer, and the second dielectric layer, a second trench extending through the third dielectric layer and having a bottom located in the first trench on the second dielectric layer and extending over a portion of the second dielectric, and a gate electrode filling the second trench. | 12-03-2015 |
Mary Y. Lee, Jamaica Plain, MA US
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20130026050 | Reagents for Electrochemical Test Strips - A dry reagent composition that includes an active redox enzyme that oxidizes an analyte as a specific substrate to produce an inactive reduced form of the enzyme; and a salt of ferricyanide provides improved performance in electrochemical test strips such as those used for detection of glucose. The salt of ferricyanide consists of ferricyanide and positively-charged counter ions, and the positively charged counter ions are selected such that the salt of ferricyanide is soluble in water, and such that the salt of ferricyanide or the crystalline phase of the salt of ferricyanide has a solubility in water and/or a lower E | 01-31-2013 |