Patent application number | Description | Published |
20130032798 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR - Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements. | 02-07-2013 |
20130119324 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR - There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si. | 05-16-2013 |
20130240802 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR - This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and at least one type of element (X group element) selected from an X group comprising Si, Hf, Ga, Al, Ni, Ge, Ta, W and Nb. The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided. | 09-19-2013 |
20130248855 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR - This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided. | 09-26-2013 |
20130341617 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR HAVING SAID OXIDE, AND THIN-FILM TRANSISTOR - The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])≦0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])≧0.5. [In]/([In]+[Zn]+[Sn])≦0.3 - - - (1), [In]/([In]+[Zn]+[Sn])≦1.4×{[Zn]/([Zn]+[Sn])}−0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])≦0.83 - - - (3), and 0.1≦[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching. | 12-26-2013 |
Patent application number | Description | Published |
20090200462 | SCANNING PROBE MICROSCOPE CAPABLE OF MEASURING SAMPLES HAVING OVERHANG STRUCTURE - A scanning probe microscope tilts the scanning direction of a z-scanner by a precise amount and with high repeatability using a movable assembly that rotates the scanning direction of the z-scanner with respect to the sample plane. The movable assembly is moved along a curved guide and has grooves that engage with corresponding projections on a stationary frame to precisely position the movable assembly at predefined locations along the curved guide. | 08-13-2009 |
20100037360 | SCANNING PROBE MICROSCOPE WITH AUTOMATIC PROBE REPLACEMENT FUNCTION - An automatic probe exchange system for a scanning probe microscope (SPM) exchanges probes between a probe mount on the SPM and a probe mount on a probe tray based on differential magnetic force. When the magnetic force on the SPM side is greater, the probe is attached to the probe mount on the SPM. When the magnetic force on the probe tray side is greater, the probe is attached to the probe mount on the probe tray. The magnetic force on the probe tray side is varied by moving the magnets that generate the magnetic force on the probe tray side closer to or further from the probe. | 02-11-2010 |
20100170015 | SCANNING PROBE MICROSCOPE CAPABLE OF MEASURING SAMPLES HAVING OVERHANG STRUCTURE - A scanning probe microscope tilts the scanning direction of a z-scanner by a precise amount and with high repeatability using a movable assembly that rotates the scanning direction of the z-scanner with respect to the sample plane. The movable assembly is moved along a curved guide by a rack-and-pinion drive system and has grooves that engage with corresponding ceramic balls formed on a stationary frame to precisely position the movable assembly at predefined locations along the curved guide. The grooves are urged against the ceramic balls via a spring force and, prior to movement of the movable assembly, a pneumatic force is applied to overcome the spring force and disengage the grooves from the ceramic balls. | 07-01-2010 |
20110277192 | SCANNING PROBE MICROSCOPE WITH DRIFT COMPENSATION - A scanning probe microscope compensates for relative drift between its upper structure that includes a probe and a scanner that scans the probe in a straight line and a lower structure that includes a sample stage and a scanner that scans the sample stage in a plane. A light beam from the upper structure is initially aligned with a center of a position sensitive photo detector (PSPD) disposed on the lower structure at a predetermined position of the sample stage and any subsequent misalignments of the light beam with the center of the PSPD at the predetermined position of the sample stage are determined to be caused by drift and compensated by the scanning probe microscope. | 11-10-2011 |