Patent application number | Description | Published |
20080316885 | METHOD OF RECORDING ERASE PATTERN INFORMATION ON AN OPTICAL RECORDING MEDIUM, ERASING INFORMATION ON THE OPTICAL RECORDING MEIDUM BASED ON THE ERASE PATTERN INFORMATION, AND OPTICAL RECORDING MEDIUM THEREFOR - An optical recording medium is provided for allowing data to be recorded on, erased from, and reproduced from, and storing information about power levels of an erase pulse. The recorded erase pattern information may include information about power levels of first and last pulses of an erase pattern for erasing data. The first and last pulses of the erase pattern can be differently set depending on the differing kind of recording layer or layers of a disk or differing kinds of disks and recorded in a reproducible only area or rewritable area of the optical recording medium. Thus, by presetting the appropriate erase power levels, the time required for selecting an optimal erase power for the optical recording medium can be considerably reduced. | 12-25-2008 |
20090073834 | METHOD OF AND APPARATUS FOR RECORDING DATA ON OPTICAL RECORDING MEDIUM - A method of and apparatus for recording data on an optical recording medium form a mark or a space by using a recording waveform having an erase pattern containing a multi-pulse. The method and the apparatus prevent distortion of the mark or the space and improve a mark shape such that a recording/reproducing characteristic of the optical recording medium is improved. | 03-19-2009 |
20100001199 | METHOD OF MEASURING PHASE OF PHASE SHIFT MASK - In a method of measuring a phase of a phase shift mask, initial extreme ultraviolet (EUV) light is divided into secondary EUV light portions. The secondary EUV light portions are irradiated onto the phase shift mask as incident EUV light portions, and the phase of the phase shift mask is measured from reflected incident EUV light portions. | 01-07-2010 |
20100216062 | Reflective photomask and method of fabricating, reflective illumination system and method of process using the same - A reflective photomask includes a phase shift object on a substrate, a reflective layer stacked on the substrate and the phase shift object, a capping layer on the reflective layer, the capping layer including at least one surface portion having a bent shape, and a light absorption pattern on the capping layer, the light absorption pattern including at least one slit exposing the surface portion of the capping layer having the bent shape. | 08-26-2010 |
20110042587 | EUV projection lens and optic system having the same - An EUV projection lens includes a substrate and concentric diffraction patterns on the substrate. The concentric diffraction patterns have an out-of phase height with respect to EUV light and include a material through which the EUV light has a transmittance higher than about 50% at the out-of phase height. The EUV projection lens has a high first order diffraction light efficiency and an optic system having the EUV projection lens has a high resolution. | 02-24-2011 |
20110240863 | METHODS AND APPARATUSES FOR MEASURING PHASE ROUGHNESS IN AN EXTREME ULTRAVIOLET MASK - Example embodiments are directed to a method and an apparatus for measuring phase roughness in an extreme ultraviolet (EUV) mask. In example embodiments, a speckle generated by the phase roughness in the EUV mask is detected by irradiating an EUV beam on the EUV mask. The phase roughness in the EUV mask is calculated and measured using the speckle. | 10-06-2011 |
20110275013 | Reflective Extreme Ultraviolet Mask - According to example embodiments, a reflective EUV mask may include a mask substrate, a patterned structure and a non-patterned structure on the mask substrate. At least one of the patterned structure and the non-patterned structure may include a thermally treated region configured to reduce a reflectivity of the respective patterned and non-patterned structure. | 11-10-2011 |
20120135339 | REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME - A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in fluid communication with the first opening. | 05-31-2012 |
20130028273 | BEAM GENERATOR - A beam generator for an aerial image generating apparatus includes a laser source for emitting a laser beam and a short wavelength beam source for generating a short wavelength beam by processing the laser beam such that the short wavelength beam is coherent with and has a wavelength shorter than that of the laser beam. A spectral unit includes a quartz plate and a spectral layer coated on a surface of the quartz plate. The spectral layer has a Brewster's angle greater than 70° with respect to the laser beam such that the short wavelength beam is reflected from the spectral unit without the laser beam, increasing the reflectivity of the shortwave beam while decreasing the reflectivity and absorptivity of the laser beam in the spectral unit. | 01-31-2013 |
20130056642 | METHOD AND APPARATUS FOR MEASURING AERIAL IMAGE OF EUV MASK - An aerial image measuring apparatus includes an extreme ultra-violet (EUV) light generation unit configured to generate EUV light, a moving unit configured to mount an EUV mask and to move the EUV mask in x and y axis directions, a primary reduction optics configured to primarily reduce a divergence of the EUV light generated by the EUV light generation unit, a secondary reduction optics configured to secondarily reduce the divergence of the primarily reduced EUV light, and a detection unit configured to sense energy information from the secondarily reduced EUV light reflected from the plurality of regions on the EUV mask, the secondarily reduced EUV light being incident on and reflected from a plurality of regions on the EUV mask. | 03-07-2013 |
20130288166 | REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF FORMING A PATTERN USING THE SAME - According to example embodiments, a reflective EUV mask may include a mask substrate, a patterned structure and a non-patterned structure on the mask substrate. At least one of the patterned structure and the non-patterned structure may include a thermally treated region configured to reduce a reflectivity of the respective patterned and non-patterned structure. | 10-31-2013 |
20140166906 | EXTREME ULTRA VIOLET GENERATION DEVICE - An extreme ultra violet (EUV) generation device includes a light source for outputting laser beam, a pulse width compression system for compressing a pulse width of the laser beam, a gas cell for receiving the laser beam having the compressed pulse width incident from the pulse width compression system and generating EUV light, and a vacuum chamber housing the pulse width compression system and the gas cell. | 06-19-2014 |
20140166907 | APPARATUS AND METHOD FOR GENERATING EXTREME ULTRA VIOLET RADIATION - An apparatus and a method for generating extreme ultra violet radiation are provided. The apparatus for generating extreme ultra violet radiation includes a light source, a first reflecting mirror on which source light emitted from the light source is incident, a second reflecting mirror on which first reflected light reflected by the first reflecting mirror is incident, a focus mirror on which second reflected light reflected by the second reflecting mirror is incident, the focus mirror reflecting third reflected light back to the second reflecting mirror, and a gas cell on which fourth reflected light reflected by the second reflecting mirror is incident. | 06-19-2014 |
20140363633 | METHODS OF REDUCING A REGISTRATION ERROR OF A PHOTOMASK, AND RELATED PHOTOMASKS AND METHODS OF MANUFACTURING AN INTEGRATED CIRCUIT - Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided. | 12-11-2014 |
Patent application number | Description | Published |
20110033025 | APPARATUS FOR MEASURING AERIAL IMAGE OF EUV MASK - An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NA | 02-10-2011 |
20120008123 | METHOD OF MEASURING AERIAL IMAGE OF EUV MASK - An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NA | 01-12-2012 |
20130161543 | ZONEPLATE AND MASK PATTERN MEASURING DEVICE COMPRISING THE ZONEPLATE - A zoneplate includes a first pattern having a first thickness, the first pattern including a first material, and a second pattern adjacent to the first pattern and having a second thickness larger than the first thickness, the second pattern including a second material, incident light incident on the first pattern from the outside passing through the first pattern, and incident light incident on the second pattern from the outside passing through the second pattern. | 06-27-2013 |