Patent application number | Description | Published |
20090016406 | NOVEL METHOD FOR MONITORING AND CALIBRATING TEMPERATURE IN SEMICONDUCTOR PROCESSING CHAMBERS - The present invention provides a non-destructive method for monitoring and calibrating chamber temperature. One embodiment of the present invention provides a method for measuring temperature comprising forming a target film on a test substrate at a first temperature, wherein the target film has one or more properties responsive to thermal exposure, exposing the target film to an environment at a second temperature in a range higher than the first temperature, measuring the one or more properties of the target film after exposing the target film to the environment at the second temperature, and determining the second temperature according to the measured one or more properties. | 01-15-2009 |
20090242957 | ATOMIC LAYER DEPOSITION PROCESSES FOR NON-VOLATILE MEMORY DEVICES - Embodiments of the invention provide memory devices and methods for forming memory devices. In one embodiment, a memory device is provided which includes a floating gate polysilicon layer disposed over source/drain regions of a substrate, a silicon oxynitride layer disposed over the floating gate polysilicon layer, a first aluminum oxide layer disposed over the silicon oxynitride layer, a hafnium silicon oxynitride layer disposed over the first aluminum oxide layer, a second aluminum oxide layer disposed over the hafnium silicon oxynitride layer, and a control gate polysilicon layer disposed over the second aluminum oxide layer. In another embodiment, a memory device is provided which includes a control gate polysilicon layer disposed over an inter-poly dielectric stack disposed over a silicon oxide layer disposed over the floating gate polysilicon layer. The inter-poly dielectric stack contains two silicon oxynitride layers separated by a silicon nitride layer. | 10-01-2009 |
20100102376 | Atomic Layer Deposition Processes for Non-Volatile Memory Devices - Embodiments of the invention provide memory devices and methods for forming such memory devices. In one embodiment, a method for fabricating a non-volatile memory device on a substrate is provided which includes depositing a first polysilicon layer on a substrate surface, depositing a silicon oxide layer on the first polysilicon layer, depositing a first silicon oxynitride layer on the silicon oxide layer, depositing a silicon nitride layer on the first silicon oxynitride layer, depositing a second silicon oxynitride layer on the silicon nitride layer, and depositing a second polysilicon layer on the second silicon oxynitride layer. In some examples, the first polysilicon layer is a floating gate and the second polysilicon layer is a control gate. | 04-29-2010 |
Patent application number | Description | Published |
20140026131 | AUTOMATIC DEPLOYMENT OF SOFTWARE APPLICATIONS TO MEET REGULATORY COMPLIANCE REQUIREMENTS - A method, system, and computer program product for cloud-based deployments of software applications that are monitored for compliance with regulatory requirements. One exemplary method commences upon receiving an indication of a compliance corpus such as HIPPA or SOX, then mapping the compliance corpus to one or more predetermined configurations of a virtual compliance platform. Any of the particular predetermined configurations include steps, operations, and/or rules for provisioning infrastructure (e.g., using cloud-resident resources). After provisioning the virtual compliance platform based on the predetermined configuration, the provisioning operations further deploys a compliance monitor. The compliance monitor encapsulates the software application within the compliance monitor so as to monitor and/or log the operation and performance of the software application with respect to the compliance regulations. In some cases, a virtual compliance platform includes a virtual machine. | 01-23-2014 |
20140068053 | CLOUD ARCHITECTURE RECOMMENDER SYSTEM USING AUTOMATED WORKLOAD INSTRUMENTATION - A method, system, and computer program product for of configuring cloud computing platforms. One such method serves for recommending alternative computing architectures for a selected application using automated instrumentation of the application under an abstracted workload. The method commences by measuring workload characteristics of the selected application using pre-determined performance parameters. Additional performance parameters to be measured are selected based on previous measurements, and further analysis includes instrumenting the application to provide measurement instruments corresponding to the respective selected additional performance parameters. Such hardware- or software-based instruments are used for determining a baseline set of performance metrics by measuring the performance of the selected application on a first (e.g., currently-in-use) computing architecture, then, measuring the performance of the application on other proposed computing architectures. Charts and reports are used for comparing the performance of the selected application on the currently-in-use architecture to any of the other proposed computing architectures. | 03-06-2014 |
Patent application number | Description | Published |
20130131957 | PATH PLANNING DURING COMBUSTION MODE SWITCH - Systems and methods are provided for transitioning between a first combustion mode and a second combustion mode in an internal combustion engine. A current operating point of the engine is identified and a target operating point for the internal combustion engine in the second combustion mode is also determined. A predefined optimized transition operating point is selected from memory. While operating in the first combustion mode, one or more engine actuator settings are adjusted to cause the operating point of the internal combustion engine to approach the selected optimized transition operating point. When the engine is operating at the selected optimized transition operating point, the combustion mode is switched from the first combustion mode to the second combustion mode. While operating in the second combustion mode, one or more engine actuator settings are adjusted to cause the operating point of the internal combustion to approach the target operating point. | 05-23-2013 |
20140230784 | System and Method for Control of a Transition Between SI and HCCI Combustion Modes - In one embodiment an engine system includes a cylinder, an inlet valve configured to control the flow of gases into the cylinder, an outlet valve configured to control the flow of gases out of the cylinder, a throttle configured to control the flow of fuel into the cylinder, a memory including program instructions stored therein, and a processor operably connected to the inlet valve, the outlet valve, the throttle, and the memory, and configured to execute the program instructions to control the inlet valve and the outlet valve in accordance with an HCCI valve lift profile and an SI valve open/close profile, and activate a first spark in the cylinder while controlling the inlet valve and the outlet valve in accordance with the HCCI valve lift profile and the SI valve open/close profile. | 08-21-2014 |
20140230786 | System and Method for Control of a Transition Between SI and HCCI Combustion Modes - In one embodiment a method of controlling an engine system includes providing a first cylinder with a first inlet valve, a first outlet valve, and a first throttle, controlling the first inlet and the first outlet valve in accordance with an SI valve lift profile, activating a first spark in the first cylinder while controlling the first inlet and the first outlet valve in accordance with the SI valve lift profile, controlling the first inlet and the first outlet valve in accordance with an HCCI valve lift profile, activating a second spark in the first cylinder while controlling the first inlet and the first outlet valve in accordance with the HCCI valve lift profile, and controlling the SOI timing of the first throttle in an HCCI SOI mode while controlling the first inlet valve and the first outlet valve in the HCCI valve lift profile after activating the second spark. | 08-21-2014 |
20140232349 | Metal/Oxygen Battery with Multistage Oxygen Compression - A vehicular battery system includes an oxygen reservoir having a first outlet and a first inlet, a multistage compressor supported by the vehicle and having a second inlet and a second outlet, the second outlet operably connected to the first inlet, a cooling system operably connected to the multistage compressor and configured to provide a coolant to the multistage compressor to cool a compressed fluid within the multistage compressor, and a vehicular battery system stack including at least one negative electrode including a form of lithium, the vehicular battery system stack having a third inlet removably operably connected to the first outlet, and a third outlet operably connected to the second inlet. | 08-21-2014 |
20140232354 | Metal/Oxygen Battery with Multistage Oxygen Compression - A vehicular battery system includes a vehicular battery system stack including at least one negative electrode including a form of lithium, an oxygen reservoir having a first outlet operably connected to the vehicular battery system stack, a multistage compressor having a first inlet operably connected to the vehicular battery system stack, and a second outlet operably connected to a second inlet of the oxygen reservoir, and a cooling system operably connected to the multistage compressor and configured to provide a coolant to the multistage compressor to cool a compressed fluid within the multistage compressor. | 08-21-2014 |
20140283800 | MIXED-MODE COMBUSTION CONTROL - Methods and systems are described for controlling engine combustion during a mixed-mode combustion modality. A target exhaust valve timing is determined based on a first combination of engine speed and load. An amount of trapped residual in an engine cylinder after an exhaust valve is closed during a first combustion cycle is also determined. Based at least in part on the amount of trapped residual, an amount of gas that will be drawn into the engine cylinder when the intake valve is opened during a second combustion cycle is determined. The target exhaust valve timing is then adjusted during the second combustion cycle in order to adjust the amount of gas that will be drawn into the engine cylinder when the intake valve is opened during a third combustion cycle. | 09-25-2014 |
20140331959 | Method of Estimating Duration of Auto-Ignition Phase in a Spark-Assisted Compression Ignition Operation - A combustion engine system in one embodiment includes a combustion engine, at least one controllable component operably connected to the combustion engine, at least one sensor configured to sense a parameter associated with the combustion engine, and an electronic control unit (ECU) operably connected to the at least one controllable component and the at least one sensor, wherein the ECU is configured to determine a temperature of an unburned mixture based upon the sensed parameter, and control the at least one controllable component based upon the determined temperature. | 11-13-2014 |
20150117490 | SYSTEM AND METHOD FOR REMOTE TEMPERATURE MEASUREMENTS IN A HARSH ENVIRONMENT - A temperature sensing device includes a probe unit on a first end and a sensor unit on a second end opposite the first end. The first end is introduced into an environment to be measured, such as an exhaust gas line from a combustion engine, and the second end is positioned in a region outside of the environment such that the sensor unit is at least partially insulated from a temperature of the environment. The probe unit, exposed to the temperature of the environment, achieves a temperature that corresponds to the temperature of the environment. The sensor unit is operable to sense the temperature of the probe unit and generate a corresponding electrical signal usable to determine a sensed temperature of the environment. The temperature of the environment can be determined on a cycle-by-cycle basis, and is usable for implementing advanced combustion strategies such as HCCI and SACI. | 04-30-2015 |
Patent application number | Description | Published |
20090033500 | METHODS AND APPARATUS FOR LOCATIONING EMERGENCY PERSONNEL USING RFID TAGS DEPLOYED AT A SITE - Systems and methods are provided for determining the location of an individual (e.g., emergency personnel) within an environment having a plurality of RFID tags located therein. A system includes a wearable RFID reader removeably attached to the individual (e.g., on his/her wrist, or uniform), wherein the wearable RFID reader is configured to activate and receive data from a plurality of RFID tags located (e.g., previously deployed) therein. An access port is positioned external to the environment and is configured to receive the data from the wearable RFID reader. A locationing module is communicatively coupled to the access port and is configured to determine the location of the individual within the site based on the data acquired from the at least one RFID tags. | 02-05-2009 |
20090059813 | INTEGRATION OF EXTERNAL LOCATION ENGINE USING SWITCH - An RF switch is provided. The RF switch includes a processor adapted for communication with an external location engine. The processor is configured to receive notification regarding a status of a wireless asset, receive a plurality of input variables associated with the wireless asset, determine whether the wireless asset is associated with the external location engine, and if the wireless asset is associated with the external location engine, query the external location engine for location data associated with the wireless asset. | 03-05-2009 |
20090082015 | SYSTEMS AND METHODS FOR CONTROLLING MOBILE UNIT ACCESS TO NETWORK SERVICES BASED ON ITS LOCATION - Methods and systems for controlling mobile unit access to network services based on the location of the mobile unit are disclosed. One system includes determining if the mobile unit is located within an area and enabling access to the network services, by the mobile unit, in response to determining that the mobile unit is located within the area. A system includes a reader configured to determine if a mobile unit is located within the area and a switch coupled to the reader. The switch is configured to provide access to the network services, to the mobile unit, in response to the reader determining that the mobile unit is located within the area. An apparatus includes means for determining if a mobile unit is located within the area and means for enabling the mobile unit to access the network services in response thereto. | 03-26-2009 |
20090085741 | METHODS AND APPARATUS FOR LOCATING AN RFID READER USING RFID TAGS - Methods and systems are provided for determining the location of an RFID reader within an environment having a plurality of RFID tags located therein. One method includes activating a tag via an RFID reader and receiving data from an RFID tag. The method also includes transmitting the data from the reader to an access port and determining the location of the reader based on the data. A system includes an RFID tag configured to transmit data when activated by an RFID reader. Furthermore, the system includes an access port configured to receive the data from the reader and a module configured to receive the data and determine the location of the reader based on the data. One RFID reader includes means for activating an RFID tag including data identifying a location of the tag, means for receiving the data, and means for transmitting the data to an access port. | 04-02-2009 |
20090085743 | METHODS AND SYSTEMS FOR CONTROLLING OPERATIONS OF A MOBILE RADIO FREQUENCY READER BASED ON ITS LOCATION - Methods and systems are provided for controlling RF reader operations based the location of the RF reader. One method includes determining that the RF reader is located within a zone associated with an access level and enabling or disabling the RF reader based on the access level. A system includes multiple access ports (APs) defining multiple zones including an access level for the RF reader. The system also includes a switch configured to determine a present zone of the mobile RF reader and enabling the RF reader based on the access level of the present zone. Another system includes means for receiving a signal from an access port and means for determining a location of the RF reader based on the signal, the location associated with an access level. The system also includes means for enabling or disabling the RF reader based on the access level. | 04-02-2009 |
20090322536 | INTEGRATED SWITCH SYSTEMS AND METHODS FOR LOCATING IDENTIFICATION TAGS - Integrated switch systems and methods for locating ID tags are disclosed. One system includes an application, a plurality of different tag readers in communication with the ID tags, and an integrated switch configured to enable the application to receive tag information from the different tag readers. An integrated switch includes multiple reader adapters, an application adapter, and a virtualization core. The virtualization core is configured to provide a common interface between each tag reader and the application. One method includes receiving a first signal from a first tag reader and receiving a second signal from a second tag reader, the first and second signals having information related to first and second ID tags, respectively. The method also includes normalizing the first and second signals such that the signals are compatible with the application and transmitting an ID tag report based on the normalized first and/or second signal to the application. | 12-31-2009 |
Patent application number | Description | Published |
20120287219 | WIRELESS NETWORK DEVICE CONFIGURATION USING IMAGE CAPTURE - Apparatus having corresponding methods and non-transitory computer-readable media comprise: a wireless network adapter; a camera configured to capture an image; and a processor configured to provide one or more wireless network parameters based on the image; wherein the wireless network adapter is configured to connect to a wireless network according to the wireless network parameters subsequent to the processor providing the wireless network parameters. | 11-15-2012 |
20120287220 | SMART REMOTE CONTROL DEVICES FOR CONTROLLING VIDEO CALL DEVICES - Apparatus having corresponding methods and non-transitory computer-readable media comprise: a transmitter configured to transmit first wireless signals to a video call device, wherein the video call device has a plurality of operating states; a receiver configured to receive second wireless signals from the video call device, wherein the second wireless signals include contextual information describing a current one of the operating states of the video call device; and a user interface configured to display an indication of the current one of the operating states of the video call device. | 11-15-2012 |
20120287231 | MEDIA SHARING DURING A VIDEO CALL - Video call devices having corresponding methods and non-transitory computer-readable media comprise: a video input interface configured to receive first video information; an audio input interface configured to receive first audio information; a transmitter configured to transmit first signals during a video call, wherein the first signals represent the first video information and the first audio information; a receiver configured to receive second signals during the video call, wherein the second signals represent second video information and second audio information; a video output interface configured to provide the second video information; an audio output interface configured to provide the second audio information; wherein the transmitter is further configured to transmit third signals during the video call, wherein the third signals represent at least one of media content, and a hyperlink, wherein the hyperlink indicates a location of the media content. | 11-15-2012 |
Patent application number | Description | Published |
20120287219 | WIRELESS NETWORK DEVICE CONFIGURATION USING IMAGE CAPTURE - Apparatus having corresponding methods and non-transitory computer-readable media comprise: a wireless network adapter; a camera configured to capture an image; and a processor configured to provide one or more wireless network parameters based on the image; wherein the wireless network adapter is configured to connect to a wireless network according to the wireless network parameters subsequent to the processor providing the wireless network parameters. | 11-15-2012 |
20120287220 | SMART REMOTE CONTROL DEVICES FOR CONTROLLING VIDEO CALL DEVICES - Apparatus having corresponding methods and non-transitory computer-readable media comprise: a transmitter configured to transmit first wireless signals to a video call device, wherein the video call device has a plurality of operating states; a receiver configured to receive second wireless signals from the video call device, wherein the second wireless signals include contextual information describing a current one of the operating states of the video call device; and a user interface configured to display an indication of the current one of the operating states of the video call device. | 11-15-2012 |
20120287231 | MEDIA SHARING DURING A VIDEO CALL - Video call devices having corresponding methods and non-transitory computer-readable media comprise: a video input interface configured to receive first video information; an audio input interface configured to receive first audio information; a transmitter configured to transmit first signals during a video call, wherein the first signals represent the first video information and the first audio information; a receiver configured to receive second signals during the video call, wherein the second signals represent second video information and second audio information; a video output interface configured to provide the second video information; an audio output interface configured to provide the second audio information; wherein the transmitter is further configured to transmit third signals during the video call, wherein the third signals represent at least one of media content, and a hyperlink, wherein the hyperlink indicates a location of the media content. | 11-15-2012 |
Patent application number | Description | Published |
20100290358 | ARCHITECTURE USING INEXPENSIVE, MANAGED WIRELESS SWITCHING POINTS TO DELIVER LARGE SCALE WLAN - Methods, apparatus and a computer program product provide for a network architecture implemented between a Wireless Switching Point and a remote Wireless Controller. The Wireless Switching Point contains only a first data plane portion. At least one incoming data packet is received at a respective port of the Wireless Switching Point. Based on data included within the at least one incoming data packet, the Wireless Switching Point determines a first current network interface utilized by at least one port of the Wireless Switching Point. The Wireless Switching Point uploads the first current network interface to a remote Wireless Controller—which implements a first control plane capability on behalf of the Wireless Switching Point. After uploading the first current network interface, the Wireless Switching Point receives an update, provided by the remote Wireless Controller, to the first current network interface. | 11-18-2010 |
20100290396 | SPLIT-PLANE WIRELESS NETWORK ARCHITECTURE - A split-plane mobility network architecture separates control and data plane operations typically encapsulated in a conventional wireless controller. Configurations provide a unified split-plane mobility switch that separates the data transport and switching in a separate hardware element, and performs control plane operations via exchanges with a centralized topology, rather than simply by adjacent switches within range. In contrast to conventional switch deployment, in which the same switch handles processing demands of the control plane and the data plane, the disclosed approach separates the data plane processing base by employing a mobility agent to define adjacent switch visibility. Thus, the routing capabilities of the data plane may be enhanced, such as to handle increasingly bandwidth-hungry applications of the same user base, without uprooting the infrastructure defined by the control plane. | 11-18-2010 |
20130077505 | Method And Apparatus For Using Received Signal Strength Indicator (RSSI) Filtering To Provide Air-Time Optimization In Wireless Networks - A method, apparatus and computer program product for using Received Signal Strength Indicator (RSSI) filtering to provide air-time optimization in wireless networks is presented. At least one message is received at an Access Point (AP) from a mobile unit (MU). A determination is made by the AP whether a received Signal Strength indicator (RSSI) associated with the at least one message from an MU is greater than a predetermined threshold. When the RSSI value associated with the at least one message from na MU is greater than to said predetermined threshold, then a response is generated by the AP and sent to the MU. | 03-28-2013 |
20140096207 | LAYER 7 AUTHENTICATION USING LAYER 2 OR LAYER 3 AUTHENTICATION - A system and method for authenticating a layer 7 client application (application layer) based on a layer 2 (data link layer) or a layer 3 (network layer) authentication is provided. A request to authenticate to a network is received from a communication device. The request to authenticate to the network is for a layer 2 or layer 3 authentication. The communication device is authenticated to the network based on having the necessary credentials. | 04-03-2014 |
Patent application number | Description | Published |
20130032084 | SILICON WAFERS BY EPITAXIAL DEPOSITION - A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors. | 02-07-2013 |
20130056044 | PHOTOVOLTAIC MODULE FABRICATION WITH THIN SINGLE CRYSTAL EPITAXIAL SILICON DEVICES - Photovoltaic modules including a plurality of solar cells bonded to a module back sheet are described herein, wherein each solar cell includes a superstrate bonded to a front side of a photovoltaic device to facilitate handling of very thin photovoltaic devices during fabrication of the module. Modules may also include module front sheets and the solar cells may include bottom sheets. The modules may be made of flexible materials, and may be foldable. Fabrication processes include tabbing photovoltaic devices prior to attaching the individual superstrates. | 03-07-2013 |
20130059430 | High Throughput Multi-Wafer Epitaxial Reactor - An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases. | 03-07-2013 |
20140014172 | Thin Film Solar Cell with Ceramic Handling Layer - A solar cell may comprise a stack of thin continuous epitaxial single crystal solar cell layers on a single crystal wafer, and a handling layer on the stack, the handling layer having a waffle-shaped structure with an array of either square or circular apertures, wherein the handling layer includes electrical contacts to the stack. The solar cell may comprise a boundary layer between the stack and the handling layer, the boundary layer being attached to both the stack and the handling layer, and the boundary layer being greater than 10 nanometers thick and parallel to the layers in the stack. The waffle-shaped structure may include perpendicular sets of first and second parallel ridges, wherein at least one of the sets is aligned at a small angle to a cleavage plane of the single crystal wafer. | 01-16-2014 |
20140295106 | HIGH THROUGHPUT MULTI-WAFER EPITAXIAL REACTOR - An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases. | 10-02-2014 |
20140311403 | HIGH THROUGHPUT MULTI-WAFER EPITAXIAL REACTOR - An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases. | 10-23-2014 |
20140338718 | LOW SHADING LOSS SOLAR MODULE - A solar cell comprises an optically transparent handle, wherein the handle includes grooves into which tabs are inserted, enabling the use of high aspect ratio tabs with minimal shading of the front side of the solar cell. Electrical connection of the tabs to busbars on the surface of the layers of the solar cell is through apertures at the bottom of each groove on the handle—the grooves being aligned to the busbars. The apertures may be filled with solder, metal pins, metal spheres, etc, and in embodiments the tabs may be metal wires. The solar cells with optically transparent handles may be formed into solar cell modules. Furthermore, in embodiments the handle with integral tabs simplifies and reduces the cost of solar cell and module fabrication since the top surface of the transparent handle including tabs may be completely flat. | 11-20-2014 |
20150040979 | Silicon Wafers with p-n Junctions by Epitaxial Deposition and Devices Fabricated Therefrom - High efficiency silicon solar cells, including IBC cells, may be formed from lightly doped p-n sandwich structures fabricated in-situ by epitaxial growth. For example, the solar cell may comprise: an n-type silicon layer greater than or equal to 20 microns thick, with a dopant concentration between 1E15/cm | 02-12-2015 |
20150187966 | MWT ARCHITECTURE FOR THIN SI SOLAR CELLS - Methods of fabricating metal wrap through solar cells and modules for thin silicon solar cells, including epitaxial silicon solar cells, are described. These metal wrap through solar cells have a planar back contact geometry for the base and emitter contacts. Fabrication of a metal wrap through solar cell may comprise: providing a photovoltaic device attached at the emitter side of the device to a solar glass by an encapsulant, the device including busbars on the device emitter; forming vias through the device base and emitter, the vias terminating in the busbars; depositing a conformal dielectric film over the surface of the vias and the back surface of the base; removing portions of the conformal dielectric film from the ends of the vias for exposing the busbars and from field areas of the base; and forming separate electrical contacts to the busbars and the field areas on the back surface of the solar cell. The solar cells may comprise epitaxially deposited silicon and may include an epitaxially deposited back surface field. | 07-02-2015 |
Patent application number | Description | Published |
20100215872 | High Throughput Multi-Wafer Epitaxial Reactor - An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases. | 08-26-2010 |
20100263587 | HIGH THROUGHPUT MULTI-WAFER EPITAXIAL REACTOR - An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the walls of the chamber. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases. | 10-21-2010 |
20110056532 | Method for manufacturing thin crystalline solar cells pre-assembled on a panel - A method for fabricating a photovoltaic (PV) cell panel wherein each of a plurality of silicon donor wafers has a separation layer formed on its upper surface, e.g., porous anodically etched silicon. On each donor wafer, a PV cell is then partially completed including at least part of inter-cell interconnect, after which plural donor wafers are laminated to a backside substrate or frontside. All of the donor wafers are then separated from the partially completed PV cells in an exfoliation process, followed by simultaneous completion of the remaining PV cell structures on PV cells. Finally, a second lamination to a frontside glass or a backside panel completes the PV cell panel. The separated donor wafers may be reused in forming other PV cells. Use of epitaxial deposition to form the layers of the PV cells enables improved dopant distributions and sharper junction profiles for improved PV cell efficiency. | 03-10-2011 |
20110186117 | THIN FILM SOLAR CELL WITH CERAMIC HANDLING LAYER - A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers affixed to a susceptor is disclosed. Porous silicon separation layers are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures. A glass/ceramic handling layer is then formed on the PV cell structures. The PV cell structures with handling layers are then exfoliated from the mother wafer. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels. The glass/ceramic handling layers provide structural integrity to the thin epitaxial solar cells during the separation process and subsequent handling. | 08-04-2011 |
20110300715 | INTEGRATED METHOD AND SYSTEM FOR MANUFACTURING MONOLITHIC PANELS OF CRYSTALLINE SOLAR CELLS - A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers affixed to a susceptor is disclosed. Porous silicon separation layers are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures. Contacts to the n- and p-layers are deposited, followed by gluing of a glass layer to the PV cell array. The porous silicon film is then separated by exfoliation in a peeling motion across all the cells attached together above, followed by attaching a strengthening layer on the PV cell array. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels. | 12-08-2011 |
20120040487 | MWT ARCHITECTURE FOR THIN SI SOLAR CELLS - Methods of fabricating metal wrap through solar cells and modules for thin silicon solar cells, including epitaxial silicon solar cells, are described. These metal wrap through solar cells have a planar back contact geometry for the base and emitter contacts. Fabrication of a metal wrap through solar cell may comprise: providing a photovoltaic device attached at the emitter side of the device to a solar glass by an encapsulant, the device including busbars on the device emitter; forming vias through the device base and emitter, the vias terminating in the busbars; depositing a conformal dielectric film over the surface of the vias and the back surface of the base; removing portions of the conformal dielectric film from the ends of the vias for exposing the busbars and from field areas of the base; and forming separate electrical contacts to the busbars and the field areas on the back surface of the solar cell. The solar cells may comprise epitaxially deposited silicon and may include an epitaxially deposited back surface field. | 02-16-2012 |
20120288990 | INSITU EPITAXIAL DEPOSITION OF FRONT AND BACK JUNCTIONS IN SINGLE CRYSTAL SILICON SOLAR CELLS - Fabrication of a single crystal silicon solar cell with an insitu epitaxially deposited very highly doped p-type silicon back surface field obviates the need for the conventional aluminum screen printing step, thus enabling a thinner silicon solar cell because of no aluminum induced bow in the cell. Furthermore, fabrication of a single crystal silicon solar cell with insitu epitaxial p-n junction formation and very highly doped n-type silicon front surface field completely avoids the conventional dopant diffusion step and one screen printing step, thus enabling a cheaper manufacturing process. | 11-15-2012 |
20140182673 | INSITU EPITAXIAL DEPOSITION OF FRONT AND BACK JUNCTIONS IN SINGLE CRYSTAL SILICON SOLAR CELLS - Fabrication of a single crystal silicon solar cell with an insitu epitaxially deposited very highly doped p-type silicon back surface field obviates the need for the conventional aluminum screen printing step, thus enabling a thinner silicon solar cell because of no aluminum induced bow in the cell. Furthermore, fabrication of a single crystal silicon solar cell with insitu epitaxial p-n junction formation and very highly doped n-type silicon front surface field completely avoids the conventional dopant diffusion step and one screen printing step, thus enabling a cheaper manufacturing process. | 07-03-2014 |
20150059847 | Passivated Emitter Rear Locally Patterned Epitaxial Solar Cell - Passivated emitter rear local epitaxy (PERL-e) thin Si solar cells may be formed with a heavily doped epitaxial back surface field (BSF) layer, which is patterned to form well spaced point contacts to the silicon base on the rear of the solar cell. The back side of the cell may be finished with a dielectric passivation layer and a metallization layer for making electrical contact to the cell. PERL-e thick Si solar cells may be formed with heavily doped epitaxial films as the back point contacts, where the point contacts are defined by the provision of a selectively patterned thermal oxide on the rear wafer surface. Furthermore, absorption of longer wavelength, infrared (IR), light in thin silicon solar cells may be improved by the addition of a dielectric stack on the rear surface of the solar cell (a back reflector), the stack acting to reflect the longer wavelength light back through the active layers of the solar cell. | 03-05-2015 |