Okudaira, JP
Hiroaki Okudaira, Yokohama JP
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20100214753 | Pb-free solder-connected structure and electronic device - Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength. | 08-26-2010 |
20130286621 | Pb-FREE SOLDER-CONNECTED STRUCTURE - Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength. | 10-31-2013 |
Hirohisa Okudaira, Toyokawa-Shi JP
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20130006396 | MACHINE CONTROL PROGRAM CREATING DEVICE - A program includes a parameter numeric value and a parameter code and a parameter name that are associated with the parameter numeric value. A dialog box information creation processing unit recognizes the parameter code and the parameter name, which are included in the program, as a parameter item, and creates dialog box information from the recognized parameter code and parameter name and the associated parameter numeric value. The parameter numeric value within the created dialog box information is editable on a dialog box display screen. When the parameter numeric value is updated, a process of changing the corresponding parameter numeric value in the program to the updated parameter numeric value is executed. | 01-03-2013 |
Keita Okudaira, Zama-Shi JP
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20110053718 | CONTINUOUSLY VARIABLE TRANSMISSION AND CONTROL METHOD THEREOF - An inertia torque input into the continuously variable speed change mechanism from the subtransmission mechanism is estimated during the shift in the subtransmission mechanism. During the shift in the subtransmission mechanism, a required oil pressure, which is an oil pressure required to maintain a contact frictional force between the respective pulleys and the wrapped member, is calculated on the basis of an input torque into the continuously variable speed change mechanism and the inertia torque. | 03-03-2011 |
20130289841 | SHIFT CONTROL DEVICE AND CONTROL METHOD FOR CONTINUOUSLY VARIABLE TRANSMISSION - A continuously variable transmission ( | 10-31-2013 |
20130317713 | SPEED RATIO CONTROL DEVICE AND CONTROL METHOD FOR CONTINUOUSLY VARIABLE TRANSMISSION - A continuously variable transmission ( | 11-28-2013 |
Ken Okudaira, Anjo-Shi JP
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20120013204 | ELECTRIC MOTOR - It is an object of the invention to secure an insulation distance between a stator and a rotor without reducing a region of a slot of a stator core in which a winding is installed. The representative electric motor includes a cylindrical stator core | 01-19-2012 |
Kohei Okudaira, Chiba JP
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20160005897 | ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF - To provide an electronic component having a protective film formed with a good uniformity, over the entire surface thereof. An aspect of the present invention is an electronic component having a protective film formed over the entire surface thereof, the electronic component has elements and wirings formed on a base body, and the protective film has been formed by a CVD method, over an entire surface of said electronic component, by: arranging an electrode in a chamber; grounding one side of the chamber and the electrode; accommodating the electronic component in the chamber; supplying an raw material gas to the chamber; rotating or swinging the chamber and thereby moving the electronic component in the chamber; supplying high-frequency power to the other side of the chamber and the electrode; and generating a raw-material-gas-based plasma between the electrode and the chamber. | 01-07-2016 |
Koji Okudaira, Tokyo JP
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20100218555 | BENDING APPARATUS AND BENDING METHOD FOR A GLASS SHEET - The present invention relates to a bending apparatus and a bending method for a glass sheet, which realize bending of a glass sheet with high precision by carrying out up-down movement of each of conveying rollers at an appropriate timing with an appropriate amount. | 09-02-2010 |
Koushin Okudaira, Kanagawa JP
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20090051700 | Image display device, image display control method and program - An image display device includes: a storage means for storing a plurality of items of image data; a first classifying means for classifying the plurality of the items of image data in a first predetermined unit; a second classifying means for breaking the plurality of the items of image data classified by the first classifying means into smaller groups in a second predetermined unit; a display control means for controlling display in such a way that images are displayed in the second predetermined unit based on the image data broken into smaller groups by the second classifying means; and a display means for performing a predetermined display based on the control performed by the display control means. | 02-26-2009 |
20120120106 | IMAGE DISPLAY DEVICE, IMAGE DISPLAY CONTROL METHOD AND PROGRAM - An image display device includes: a storage means for storing a plurality of items of image data; a first classifying means for classifying the plurality of the items of image data in a first predetermined unit; a second classifying means for breaking the plurality of the items of image data classified by the first classifying means into smaller groups in a second predetermined unit; a display control means for controlling display in such a way that images are displayed in the second predetermined unit based on the image data broken into smaller groups by the second classifying means; and a display means for performing a predetermined display based on the control performed by the display control means. | 05-17-2012 |
Sadao Okudaira, Saitama JP
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20080225408 | Subminiature imaging optical system - There is provided a subminiature imaging optical system installed in a mobile telecommunication terminal or a PDA, or used in a surveillance camera or a digital camera. The subminiature imaging optical system including: first, second, third and fourth lenses sequentially positioned from an object side to an image side, the first lens having positive refractive power, the second lens having negative refractive power, the third lens having negative refractive power, and the fourth lens having positive refractive power, wherein each of the third and fourth lenses has at least one aspherical surface. The subminiature imaging optical system corrects chromatic aberration superbly to reduce color fringing significantly, thereby achieving high resolution and compactness as well. | 09-18-2008 |
Tomonori Okudaira, Kanagawa JP
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20110037103 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To improve performance of a semiconductor device. Over a semiconductor substrate, a plurality of p-channel type MISFETs for logic, a plurality of n-channel type MISFETs for logic, a plurality of p-channel type MISFETs for memory, and a plurality of n-channel type MISFETs for memory are mixedly mounted. At least a part of the p-channel type MISFETs for logic have each a source/drain region constituted by silicon-germanium, and all the n-channel type MISFETs for logic have each a source/drain region constituted by silicon. All the p-channel type MISFETs for memory have each a source/drain region constituted by silicon, and all the n-channel type MISFETs for memory have each a source/drain region constituted by silicon. | 02-17-2011 |
20130314165 | SEMICONDUCTOR DEVICE - A semiconductor device is formed by sealing, with a resin, a semiconductor chip (CP | 11-28-2013 |
Tomonori Okudaira, Tokyo JP
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20090079007 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention can prevent occurrence of an off-leak current in the NMISFETs formed over the Si (110) substrate and having a silicided source/drain region. The semiconductor device includes N channel MISFETs (Metal Insulator Semiconductor Field Effect Transistors) which are formed over a semiconductor substrate having a main surface with a (110) plane orientation and have a source region and a drain region at least one of which has thereover nickel silicide or a nickel alloy silicide. Of these NMISFETs, those having a channel width less than 400 nm are laid out so that their channel length direction is parallel to a <100> crystal orientation. | 03-26-2009 |
20090283909 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - There is provided a semiconductor device having a metal silicide layer which can suppress the malfunction and the increase in power consumption of the device. The semiconductor device has a semiconductor substrate containing silicon and having a main surface, first and second impurity diffusion layers formed in the main surface of the semiconductor substrate, a metal silicide formed over the second impurity diffusion layer, and a silicon nitride film and a first interlayer insulation film sequentially stacked over the metal silicide. In the semiconductor device, a contact hole penetrating through the silicon nitride film and the first interlayer insulation film, and reaching the surface of the metal silicide is formed. The thickness of a portion of the metal silicide situated immediately under the contact hole is smaller than the thickness of a portion of the metal silicide situated around the contact hole. | 11-19-2009 |
20090291537 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device, including the steps of preparing a silicon substrate which has a main surface whose plane direction is a surface (100); forming an n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) which has a gate electrode, a source region, a drain region and a channel whose channel length direction is parallel to a crystal orientation <100> of the silicon substrate; and forming NiSi over the gate electrode and NiSi | 11-26-2009 |
20100171183 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CARRYING OUT ION IMPLANTATION BEFORE SILICIDE PROCESS - An N-type source region and an N-type drain region of N-channel type MISFETs are implanted with ions (containing at least one of F, Si, C, Ge, Ne, Ar and Kr) with P-channel type MISFETs being covered by a mask layer. Then, each gate electrode, source region and drain region of the N- and P-channel type MISFETs are subjected to silicidation (containing at least one of Ni, Ti, Co, Pd, Pt and Er). This can suppress a drain-to-body off-leakage current (substrate leakage current) in the N-channel type MISFETs without degrading the drain-to-body off-leakage current in the P-channel type MISFETs. | 07-08-2010 |
20100230761 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - To improve the performance of semiconductor devices. Over an n | 09-16-2010 |
20110207317 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - There is provided a semiconductor device having a metal silicide layer which can suppress the malfunction and the increase in power consumption of the device. The semiconductor device has a semiconductor substrate containing silicon and having a main surface, first and second impurity diffusion layers formed in the main surface of the semiconductor substrate, a metal silicide formed over the second impurity diffusion layer, and a silicon nitride film and a first interlayer insulation film sequentially stacked over the metal silicide. In the semiconductor device, a contact hole penetrating through the silicon nitride film and the first interlayer insulation film, and reaching the surface of the metal silicide is formed. The thickness of a portion of the metal silicide situated immediately under the contact hole is smaller than the thickness of a portion of the metal silicide situated around the contact hole. | 08-25-2011 |
Yosuke Okudaira, Tokyo JP
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20150052766 | SURVEYING INSTRUMENT - A surveying instrument includes a main body including a base and a pedestal rotating in a horizontal direction relative to the base, and a cover member which covers the main body, wherein the pedestal is provided with a support member which supports a lens barrel of a ranging optical system to be rotatable in a vertical direction, and the cover member covers the support member of the pedestal, the lens barrel, and a guide light irradiation unit which irradiates with guide light indicating a collimation direction of the main body to an operator. | 02-26-2015 |
Yosuke Okudaira, Konosu-Shi JP
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20150185463 | STRUCTURED ILLUMINATING MICROSCOPY APPARATUS - An acquiring unit of a structured illuminating microscopy apparatus acquires at least two modulated images having the same wave number vector and the different phases; and a calculating unit of the structured illuminating microscopy apparatus, in a spatial frequency spectrum of each of at least the two modulated images acquired by the acquiring unit, separates a 0th-order modulating component and ±first-order modulating components of observational light fluxes superimposed on arbitrary two observation points based on at least four observation values regarding the two observation points which are mutually displaced by an amount of the wave number vector. | 07-02-2015 |
Yusuke Okudaira, Hiratsuka JP
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20110010010 | ROBOT SAFETY DEVICE AND ROBOT - A robot safety device, which is provided between a drive shaft of a robot and an actuator for driving the drive shaft and prevents unexpected action to a user positioned around the robot, and in which such a possibility that a robot damages a person is detected and the detection is utilized as a trigger to quickly stop the driving force for the robot. The device is provided with a transmission part which transmits to the drive shaft an output from the actuator, an acceleration operation corresponding part which mechanically generates corresponding to the transmission accelerating operation of the transmission part caused by the actuator, regulation auxiliary force for regulating the operation of the transmission part caused by the output from the actuator, and a regulation part which is driven by the regulation auxiliary force generated by the accelerating operation corresponding part and regulates the operation of the transmission part. | 01-13-2011 |