Patent application number | Description | Published |
20100214453 | BACKSIDE ILLUMINATION IMAGE SENSOR, MANUFACTURING METHOD THEREOF AND IMAGE-CAPTURING DEVICE - A backside illumination image sensor equipped with a plurality of pixels disposed in a two-dimensional pattern, includes: image-capturing pixels; and focus detection pixels. | 08-26-2010 |
20110273599 | IMAGE-CAPTURING DEVICE AND IMAGING APPARATUS - An image-capturing device includes: a first image sensor equipped with first and second image-capturing pixels and first focus detection pixels, each of which receives one of light fluxes formed by splitting subject light having passed through an optical system, the first and the second image-capturing pixels generating first and second color signals respectively and the first focus detection pixels outputting focus detection signals indicating a state of focus detection pertaining to the optical system; and a second image sensor equipped with third image-capturing pixels and second focus detection pixels, each of which receives another light flux, the third image-capturing pixels generating third color signals and the second focus detection pixels outputting focus detection signals, wherein: when n represents a quantity of the first image-capturing pixels, quantities of the second and the third image-capturing pixels, and the first and the second focus detection pixels are n, 2n, 2n and 2n respectively. | 11-10-2011 |
20140110812 | BACKSIDE ILLUMINATION IMAGE SENSOR, MANUFACTURING METHOD THEREOF AND IMAGE-CAPTURING DEVICE - A backside illumination image sensor equipped with a plurality of pixels disposed in a two-dimensional pattern, includes: image-capturing pixels; and focus detection pixels. | 04-24-2014 |
20150062391 | IMAGE SENSOR, PHOTOGRAPHING METHOD, AND IMAGE-CAPTURING DEVICE - An image sensor includes: a plurality of microlenses arranged in a two-dimensional pattern; and a plurality of pixels that are provided in correspondence to each of the microlenses and receive lights of different color components, respectively. Pixels that are provided at adjacent microlenses among the microlenses and that receive lights of same color components, are adjacently arranged. | 03-05-2015 |
20150077590 | IMAGING DEVICE - An imaging element comprising: an imaging unit that has: a plurality of groups each including at least one pixel; and a plurality of signal readout units that are each provided to each of the groups and read out a signal from the pixel; and a control unit that controls the signal readout unit in at least one group among the plurality of groups is provided. Each of the plurality of groups may include a plurality of the pixels. The control unit may select at least one group among the plurality of groups and control the signal readout unit by using a control parameter that is different from a control parameter that is used for another group among the plurality of groups. | 03-19-2015 |
20150163441 | IMAGING SENSOR AND IMAGING DEVICE - An imaging sensor comprising: an imaging chip in which a plurality of pixel are arranged in a matrix; and a signal processing chip that is each provided for one or more pixel columns or one or more pixel rows, has a device that performs signal processing on a pixel signal output from a pixel, and is stacked with the imaging chip is provided. For example, the device that performs signal processing is an A/D converter that converts a pixel signal output from the pixel into a digital signal, and when a pixel signal output from the pixel is converted into a digital signal, at least two or more A/D converters among the A/D converters are controlled in parallel. | 06-11-2015 |
20150222805 | IMAGING ELEMENT AND IMAGING DEVICE - An image sensor includes: a plurality of light receiving units arranged along a first direction and along a second direction different from the first direction in a two-dimensional array; and a light receiving unit arranged at a central position among four light receiving units set next to each other along the first direction and the second direction among the plurality of light receiving units, which includes a light shielding member arranged over part thereof. | 08-06-2015 |
20150222833 | IMAGE-CAPTURING DEVICE AND IMAGE SENSOR - An image-capturing device includes an image sensor. The image sensor includes an upper layer pixel group and a lower layer pixel group that receives the light fluxes from the subject that have passed through each pixel in the upper layer pixel group. The lower layer pixel group includes fourth, fifth and sixth pixels having fourth, fifth and sixth spectral sensitivities, respectively, that are complementary to first, second, and third spectral sensitivities, respectively, of the upper layer pixel group, being arranged in a two-dimensional pattern. Positions of first, second and third pixels in the upper layer pixel group and positions of the fourth, fifth and sixth pixels in the lower layer pixel group are determined such that the fourth, fifth and sixth pixels receive light fluxes that pass through the first, second and third pixels, respectively. | 08-06-2015 |
20150229858 | BACKSIDE ILLUMINATION IMAGE SENSOR, MANUFACTURING METHOD THEREOF AND IMAGE-CAPTURING DEVICE - An image sensor includes a first pixel that is capable of outputting a focus detection signal and a second pixel that includes a semiconductor layer and a wiring layer. The semiconductor layer includes a first surface on which light enters, a second surface opposite from the first surface, and a photoelectric conversion unit that converts light to an electric charge and is disposed between the first surface and the second surface. The wiring layer is formed on a side of the second surface of the semiconductor layer and includes a signal output line through which the focus detection signal read out from the first pixel and an image-capturing signal generated according to the electric charge converted at the photoelectric conversion unit are output. | 08-13-2015 |
20160049438 | IMAGING DEVICE AND IMAGING UNIT - An imaging device having a first surface on which light is incident and a second surface on an opposite side of the first surface, includes a photoelectric conversion section including semiconductors having a same conductivity type, in which an impurity concentration on the second surface side is higher than an impurity concentration on the first surface side. | 02-18-2016 |
Patent application number | Description | Published |
20090067460 | Semiconductor optical device with suppressed double injection phenomenon - A semiconductor optical device where the leak current due to the double injection of carriers may be suppressed and a simplified process to form the device are disclosed. The device | 03-12-2009 |
20100117104 | INTEGRATED SEMICONDUCTOR OPTICAL DEVICE AND OPTICAL APPARATUS USING THE SAME - In an integrated semiconductor optical device, a first cladding layer is made of a first conductivity type semiconductor. A first active layer for forming a first semiconductor optical device is provided on the first cladding layer in a first area of a principal surface of a substrate. A second active layer for forming a second semiconductor optical device is provided on the first cladding layer in a second area of the principal surface. A second cladding layer made of a second conductivity type semiconductor is provided on the second active layer. A third cladding layer made of a first conductivity type semiconductor is provided on the first active layer. A tunnel junction region is provided between the first active layer and the third cladding layer. The first active layer is coupled to the second active layer by butt joint. The second and third cladding layers form a p-n junction. | 05-13-2010 |
20110069924 | OPTICAL MODULATOR HAVING MACH-ZENDER ARRANGEMENT AND METHOD TO GENERATE MODULATED OPTICAL SIGNAL USING THE SAME - A semiconductor optical modulator with the Mach-Zender type is disclosed. The optical modulator of the invention cab driven by a single phase signal and reduce the chirping of the modulated light. Two waveguides of the Mach-Zender modulator each including an active layer showing the exciton resonance in the refractive index are connected with a resistor. The driving signal is applied to one of the waveguides, while, the signal is applied to the other waveguide through the resistor where the other waveguide is grounded through a resistor. Adjusting the resistance of two resistors and the amplitude of the applied signal, the Mach-Zender modulator shows a substantial modulation degree with substantially no chirping characteristic. | 03-24-2011 |
20110090931 | SEMICONDUCTOR DIFFRACTION GRATING DEVICE AND SEMICONDUCTOR LASER - A semiconductor diffraction grating device includes a semiconductor substrate having a principal surface, a semiconductor core layer and a semiconductor cladding layer provided on the principal surface, and a chirped grating structure provided between the semiconductor core layer and the semiconductor cladding layer. The chirped grating structure includes a first region, a second region, and a third region arranged in that order in a predetermined axis direction, the first, second, and third regions including a plurality of projections constituting a chirped grating. The plurality of projections are provided at placement positions arranged with a predetermined pitch in the predetermined axis direction. The coupling coefficient κ of the chirped grating monotonically increases in the predetermined axis direction to a predetermined value in the first region, remains flat in the second region, and monotonically decreases in the predetermined axis direction from the predetermined value in the third region. | 04-21-2011 |
20130329761 | QUANTUM CASCADE SEMICONDUCTOR LASER - A quantum cascade semiconductor laser includes a n-type semiconductor substrate, the substrate having a main surface; a mesa waveguide disposed on the substrate, the mesa waveguide including a core layer and an n-type upper cladding layer disposed on the core layer; a first semiconductor layer disposed on a side surface of the mesa waveguide and the main surface of the substrate, the first semiconductor layer being in contact with the side surface of the mesa waveguide; and a second semiconductor layer disposed on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer constitute a burying region embedding the side surfaces of the mesa waveguide. The first semiconductor layer is formed of at least one of a semi-insulating semiconductor and a p-type semiconductor. In addition, the second semiconductor layer is formed of an n-type semiconductor. | 12-12-2013 |
20140219607 | OPTICAL ASSEMBLY AND METHOD FOR PRODUCING THE SAME - An optical assembly is disclosed where the optical assembly provides an optical device and a holder including a sleeve, a skirt, and a lens. The sleeve has a bore, into which an external optical fiber is set to couple with the optical device, providing a target surface in an end thereof. The target surface includes an aiming index to indicate the axis of the lens. | 08-07-2014 |
20140348196 | SEMICONDUCTOR OPTICAL DEVICE ASSEMBLY - A semiconductor optical device assembly includes a quantum cascade laser including first to fifth portions; and a sub-mount having a mount surface including first to third areas, the first area and the third area supporting the first portion and the fifth portion of the quantum cascade laser. The quantum cascade laser includes a substrate having a main surface; a semiconductor mesa disposed on the main surface in the third portion, the semiconductor mesa including a light emitting layer; and an electrode disposed on a surface in the first to fifth portions of quantum cascade laser, the electrode being in contact with an upper surface of the semiconductor mesa. The quantum cascade laser is mounted on the sub-mount with a gap formed between a surface of the electrode of the third portion of the quantum cascade laser and the second area of the sub-mount. | 11-27-2014 |
20140355634 | QUANTUM CASCADE LASER - A quantum cascade laser includes a semiconductor substrate including a principal surface; a mesa waveguide disposed on the principal surface of the semiconductor substrate, the mesa waveguide including a light emitting region and an upper cladding layer disposed on the light emitting region, the mesa waveguide extending in a direction orthogonal to a reference direction; and a current blocking layer formed on a side surface of the mesa waveguide. The light emitting region includes a plurality of core regions and a plurality of buried regions. The core regions and the buried regions are alternately arranged in the reference direction. The core region at a central portion of the mesa waveguide has a width smaller than a width of the core region at a peripheral portion of the mesa waveguide in the reference direction. | 12-04-2014 |
20140355637 | QUANTUM CASCADE LASER - A quantum cascade laser includes a semiconductor substrate including a principal surface; a mesa waveguide disposed on the principal surface of the semiconductor substrate, the mesa waveguide including a light emitting region and an upper cladding layer disposed on the light emitting region, the mesa waveguide extending in a direction orthogonal to a reference direction; and a current blocking layer formed on a side surface of the mesa waveguide. The light emitting region includes a plurality of core regions and a plurality of buried regions. The core regions and the buried regions are alternately arranged in the reference direction. The core region at a central portion of the mesa waveguide has a width larger than a width of the core region at a peripheral portion of the mesa waveguide in the reference direction. | 12-04-2014 |