Jon M. Slaughter, Tempe US
Jon M. Slaughter, Tempe, AZ US
Patent application number | Description | Published |
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20080205130 | MRAM FREE LAYER SYNTHETIC ANTIFERROMAGNET STRUCTURE AND METHODS - A magnetic tunnel junction (MTJ) structure for use with toggle MRAM devices and the like includes a tunnel barrier layer and a synthetic antiferromagnet (SAF) structure formed on the tunnel barrier layer, wherein the SAF includes a plurality (e.g., three or more) ferromagnetic layers antiferromagnetically or ferromagnetically coupled by a plurality of respective coupling layers. The bottom ferromagnetic layer adjacent the tunnel barrier layer has a high spin polarization and a high intrinsic anisotropy field (H | 08-28-2008 |
20090046397 | METHODS AND APPARATUS FOR A SYNTHETIC ANTI-FERROMAGNET STRUCTURE WITH IMPROVED THERMAL STABILITY - A synthetic antiferromagnet (SAF) structure includes a bottom ferromagnetic layer, a coupling layer formed over the bottom ferromagnetic layer, and a top ferromagnetic layer formed over the coupling layer. One of the top and bottom ferromagnetic layers comprises an amorphous alloy characterized by (Co | 02-19-2009 |
20090121266 | METHODS AND STRUCTURES FOR EXCHANGE-COUPLED MAGNETIC MULTI-LAYER STRUCTURE WITH IMPROVED OPERATING TEMPERATURE BEHAVIOR - Exchange-coupled magnetic multilayer structures for use with toggle MRAM devices and the like include a tunnel barrier layer ( | 05-14-2009 |
20090213503 | MAGNETIC TUNNEL JUNCTION DEVICE - A magnetic tunnel junction (MTJ) ( | 08-27-2009 |
20090279212 | Two-Axis Magnetic Field Sensor with Multiple Pinning Directions - A fabrication process and apparatus provide a high-performance magnetic field sensor ( | 11-12-2009 |
20100213933 | MAGNETIC FIELD SENSING DEVICE - A magnetic field sensing device for determining the strength of a magnetic field, includes four magnetic tunnel junction elements or element arrays ( | 08-26-2010 |
20100276389 | TWO-AXIS MAGNETIC FIELD SENSOR WITH SUBSTANTIALLY ORTHOGONAL PINNING DIRECTIONS - A fabrication process and apparatus provide a high-performance magnetic field sensor ( | 11-04-2010 |
20100277971 | METHOD FOR REDUCING CURRENT DENSITY IN A MAGNETOELECTRONIC DEVICE - A method for reducing spin-torque current density needed to switch a magnetoelectronic device ( | 11-04-2010 |
20110121826 | Two-Axis Magnetic Field Sensor with Multiple Pinning Directions - A fabrication process and apparatus provide a high-performance magnetic field sensor ( | 05-26-2011 |
20140021471 | MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE - An MRAM bit ( | 01-23-2014 |