Patent application number | Description | Published |
20080261271 | EXPRESSION OF HIV POLYPEPTIDES AND PRODUCTION OF VIRUS-LIKE PARTICLES - The present invention relates to the efficient expression of HIV polypeptides in a variety of cell types, including, but not limited to, mammalian, insect, and plant cells. Synthetic expression cassettes encoding the HIV Gag-containing polypeptides are described, as are uses of the expression cassettes in applications including DNA immunization, generation of packaging cell lines, and production of Env-, tat- or Gag-containing proteins. The invention provides methods of producing Virus-Like Particles (VLPs), as well as, uses of the VLPs including, but not limited to, vehicles for the presentation of antigens and stimulation of immune response in subjects to whom the VLPs are administered. | 10-23-2008 |
20090104226 | Alphavirus Vectors for Respiratory Pathogen Vaccines - Described herein are compositions and methods for stimulating an immune response to one or more proteins derived from one or more respiratory pathogens. In particular, the invention relates to alphavirus replicons, alphavirus vector constructs, alphavirus replicon particles expressing one or more antigens derived from one or more respiratory pathogens as well as to method of making and using these immunogenic compositions. | 04-23-2009 |
20100055128 | METHOD FOR THE PURIFICATION OF ALPHAVIRUS REPLICON PARTICLES - Methods of production and purification for viruses and virus-derived vectors, including those related to alphaviruses, are disclosed. in one aspect, methods of purification that subject alphavirus replicon particle preparations to one or more steps of chromatographic purification, such as using an ion exchange resin, are provided. Also disclosed are methods of characterizing alphavirus replicon particles and utilizing these materials for vaccines and gene-based therapeutics. | 03-04-2010 |
20110002958 | Alphavirus Vectors for Respiratory Pathogen Vaccines - Described herein are compositions and methods for stimulating an immune response to one or more proteins derived from one or more respiratory pathogens. In particular, the invention relates to alphavirus replicons, alphavirus vector constructs, and alphavirus replicon particles expressing one or more antigens derived from one or more respiratory pathogens, as well as to methods of making and using the immunogenic compositions. | 01-06-2011 |
20110065146 | Expression of HIV polypeptides and production of virus-like particles - The present invention relates to the efficient expression of HIV polypeptides in a variety of cell types, including, but not limited to, mammalian, insect, and plant cells. Synthetic expression cassettes encoding the HIV Gag-containing polypeptides are described, as are uses of the expression cassettes in applications including DNA immunization, generation of packaging cell lines, and production of Env-, tat- or Gag-containing proteins. The invention provides methods of producing Virus-Like Particles (VLPs), as well as, uses of the VLPs including, but not limited to, vehicles for the presentation of antigens and stimulation of immune response in subjects to whom the VLPs are administered. | 03-17-2011 |
20120231526 | Method for the Purification of Alphavirus Replicon Particles - Methods of production and purification for viruses and virus-derived vectors, including those related to alphaviruses, are disclosed. In one aspect, methods of purification that subject alphavirus replicon particle preparations to one or more steps of chromatographic purification, such as using an ion exchange resin, are provided. Also disclosed are methods of characterizing alphavirus replicon particles and utilizing these materials for vaccines and gene-based therapeutics | 09-13-2012 |
20120269840 | EXPRESSION OF HIV POLYPEPTIDES AND PRODUCTION OF VIRUS-LIKE PARTICLES - The present invention relates to the efficient expression of HIV polypeptides in a variety of cell types, including, but not limited to, mammalian, insect, and plant cells. Synthetic expression cassettes encoding the HIV Gag-containing polypeptides are described, as are uses of the expression cassettes in applications including DNA immunization, generation of packaging cell lines, and production of Env-, tat- or Gag-containing proteins. The invention provides methods of producing Virus-Like Particles (VLPs), as well as, uses of the VLPs including, but not limited to, vehicles for the presentation of antigens and stimulation of immune response in subjects to whom the VLPs are administered. | 10-25-2012 |
20150024002 | ALPHAVIRUS VECTORS FOR RESPIRATORY PATHOGEN VACCINES - Described herein are compositions and methods for stimulating an immune response to one or more proteins derived from one or more respiratory pathogens. In particular, the invention relates to | 01-22-2015 |
Patent application number | Description | Published |
20110140246 | DELTA-DOPING AT WAFER LEVEL FOR HIGH THROUGHPUT, HIGH YIELD FABRICATION OF SILICON IMAGING ARRAYS - Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH | 06-16-2011 |
20110169119 | METHODS TO FABRICATE AND IMPROVE STAND-ALONE AND INTEGRATED FILTERS - Embodiments of the invention provide for fabricating a filter, for electromagnetic radiation, in at least three ways, including (1) fabricating integrated thin film filters directly on a detector; (2) fabricating a free standing thin film filter that may be used with a detector; and (3) treating an existing filter to improve the filter's properties. | 07-14-2011 |
20110169160 | REAL TIME MONITORING OF INDIUM BUMP REFLOW AND OXIDE REMOVAL ENABLING OPTIMIZATION OF INDIUM BUMP MORPHOLOGY - A method, apparatus, system, and device provide the ability to form one or more solder bumps on one or more materials. The solder bumps are reflowed. During the reflowing, the solder bumps are monitored in real time. The reflow is controlled in real time, thereby controlling a morphology of each of the solder bumps. Further, the wetting of the solder bumps to a surface of the materials is controlled in real time. | 07-14-2011 |
20110300716 | METHOD OF IMPROVING FILM NON-UNIFORMITY AND THROUGHPUT - Methods, apparatus, and systems for depositing materials with gaseous precursors are provided. In certain implementations, the methods involve providing a wafer substrate to a chamber of an apparatus. The apparatus includes a showerhead to deliver a gas to the chamber, a volume, and an isolation valve between the volume and the showerhead. A gas is delivered the volume when the isolation valve is closed, pressurizing the volume. The isolation valve is opened to allow the gas to flow to the showerhead when the gas is being delivered to the volume. A material is formed on the wafer substrate using the gas. In some implementations, releasing the pressurized gas from the volume reduces the duration of time to develop a spatially uniform gas flow across the showerhead. | 12-08-2011 |
20110316110 | ATOMIC LAYER DEPOSITION OF CHEMICAL PASSIVATION LAYERS AND HIGH PERFORMANCE ANTI-REFLECTION COATINGS ON BACK-ILLUMINATED DETECTORS - A back-illuminated silicon photodetector has a layer of Al | 12-29-2011 |
20120168891 | ATOMICALLY PRECISE SURFACE ENGINEERING FOR PRODUCING IMAGERS - High-quality surface coatings, and techniques combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate such high-quality surface coatings are provided. The coatings made in accordance with the techniques set forth by the invention are shown to be capable of forming silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155 nm-300 nm). The surface engineering approaches used demonstrate the robustness of detector performance that is obtained by achieving atomic level precision at all steps in the coating fabrication process. As proof of concept, the characterization, materials, and exemplary devices produced are presented along with a comparison to other approaches. | 07-05-2012 |
20130157465 | METHODS FOR STRIPPING PHOTORESIST AND/OR CLEANING METAL REGIONS - Methods are provided for cleaning metal regions overlying semiconductor substrates. A method for removing material from a metal region comprises heating the metal region, forming a plasma from a gas comprising hydrogen and carbon dioxide, and exposing the metal region to the plasma. | 06-20-2013 |
20140167198 | ATOMIC LAYER DEPOSITION OF HIGH PERFORMANCE ANTI REFLECTION COATINGS ON DELTA-DOPED CCDS - A back-illuminated silicon photodetector has a layer of Al | 06-19-2014 |
20140252565 | Nucleation Interface for High-K Layer on Germanium - A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO | 09-11-2014 |
20150035085 | Doped High-k Dielectrics and Methods for Forming the Same - Embodiments provided herein describe high-k dielectric layers and methods for forming high-k dielectric layers. A substrate is provided. The substrate includes a semiconductor material. The substrate is exposed to a hafnium precursor. The substrate is exposed to a zirconium precursor. The substrate is exposed to an oxidant only after the exposing of the substrate to the hafnium precursor and the exposing of the substrate to the zirconium precursor. The exposing of the substrate to the hafnium precursor, the exposing of the substrate to the zirconium precursor, and the exposing of the substrate to the oxidant causes a layer to be formed over the substrate. The layer includes hafnium, zirconium, and oxygen. | 02-05-2015 |
20150041912 | Gate Stacks Including TaXSiYO for MOSFETS - Provided are field effect transistor (FET) assemblies and methods of forming thereof. An FET assembly may include a dielectric layer formed from tantalum silicon oxide and having the atomic ratio of silicon to tantalum and silicon (Si/(Ta+Si)) of less than 5% to provide a low trap density. The dielectric layer may be disposed over an interface layer, which is disposed over a channel region. The same type of the dielectric layer may be used a common gate dielectric of an nMOSFET (e.g., III-V materials) and a pMOSFET (e.g., germanium). The channel region may include one of indium gallium arsenide, indium phosphate, or germanium. The interface layer may include silicon oxide to provide a higher energy barrier. The dielectric layer may be formed using an atomic layer deposition technique by adsorbing both tantalum and silicon containing precursors on the deposition surface and then oxidizing both precursors in the same operation. | 02-12-2015 |
20150064361 | UV treatment for ALD film densification - Irradiation with ultraviolet (UV) light during atomic layer deposition (ALD) can be used to cleave unwanted bonds on the layer being formed (e.g., trapped precursor ligands or process-gas molecules). Alternatively, the UV irradiation can be used to excite the targeted bonds so they may be more easily cleaved by other means. The use of UV may enable the formation of low-defect-density films at lower deposition temperatures (e.g., <250 C), or reduce the need for a high-temperature post-deposition anneal, improving the quality of devices formed on heat-sensitive materials such as germanium. | 03-05-2015 |
20150118828 | Reduction of native oxides by annealing in reducing gas or plasma - Native oxide growth on germanium, silicon germanium, and InGaAs undesirably affects CET (capacitive equivalent thickness) and EOT (effective oxide thickness) of high-k and low-k metal-oxide layers formed on these semiconductors. Even if pre-existing native oxide is initially removed from the bare semiconductor surface, some metal oxide layers are oxygen-permeable in thicknesses below about 25 Å thick. Oxygen-containing species used in the metal-oxide deposition process may diffuse through these permeable layers, react with the underlying semiconductor, and re-grow the native oxide. To eliminate or mitigate this re-growth, the substrate is exposed to a gas or plasma reductant (e.g., containing hydrogen). The reductant diffuses through the permeable layers to react with the re-grown native oxide, detaching the oxygen and leaving the un-oxidized semiconductor. The reduction product(s) resulting from the reaction may then be removed from the substrate (e.g., driven off by heat). | 04-30-2015 |
20150132938 | Methods and Systems for Forming Reliable Gate Stack on Semiconductors - Methods are provided for the deposition of high-k gate dielectric materials which are doped with fluorine and/or nitrogen to improve the performance and reliability. The high-k dielectric materials may include at least one of hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, zirconium oxide, zirconium silicon oxide, zirconium aluminum oxide, titanium oxide, titanium silicon oxide, or titanium aluminum oxide. The fluorine dopant is provided from a layer including titanium nitride or amorphous silicon, where the layer is doped with at least one of fluorine or nitrogen. The dopants diffuse into the high-k dielectric material during a subsequent anneal process. | 05-14-2015 |
20150140834 | al2o3 surface nucleation preparation with remote oxygen plasma - Methods and apparatus for processing using a plasma source for the treatment of semiconductor surfaces are disclosed. The apparatus includes an outer vacuum chamber enclosing a substrate support, a plasma source (either a direct plasma or a remote plasma), and an optional showerhead. Other gas distribution and gas dispersal hardware may also be used. The plasma source may be used to generate activated species operable to alter the surface of the semiconductor materials. Further, the plasma source may be used to generate activated species operable to enhance the nucleation of deposition precursors on the semiconductor surface. | 05-21-2015 |
20150176124 | Methods for Rapid Generation of ALD Saturation Curves Using Segmented Spatial ALD - Systems and methods for rapid generation of ALD saturation curves using segmented spatial ALD are disclosed. Methods include introducing a substrate, having a plurality of substrate segment regions, into a processing chamber. The substrate may be disposed upon a pedestal within the chamber. Sequentially exposing the plurality of segment regions to a precursor within the chamber at a first processing temperature. Afterwards, purging the precursor from the chamber and then sequentially exposing each plurality of segment regions to a reactant within the chamber at the first processing temperature. Afterwards, purging the reactant from the chamber. Repeat sequentially exposing the plurality of segment regions to the precursor and the reactant for a plurality of cycles. Each segment region may be sequentially exposed to the precursor for a unique processing time. The pedestal may be rotated prior to exposing each next segment region to the precursor and the reactant. | 06-25-2015 |
20150179436 | Plasma densification of dielectrics for improved dielectric loss tangent - Defects in hydrogenated amorphous silicon are reduced by low-energy ion treatments and optional annealing. The treatments leave strongly-bonded hydrogen and other passivants in place, but increase the mobility of loosely-bonded and interstitially trapped hydrogen that would otherwise form unwanted two-level systems (TLS). The mobilized hydrogen atoms may be attracted to unused passivation sites or recombined into H | 06-25-2015 |
20150179438 | GATE STACKS AND OHMIC CONTACTS FOR SIC DEVICES - SiC substrates are cleaned and provided to a process chamber. In-situ plasma surface treatments are applied to further clean the surface of the substrate. A dielectric interface layer is deposited in-situ to passivate the surface. Metal layers having a low work function are deposited above the dielectric interface layer. The stack is annealed at about 500C in forming gas to form low resistivity ohmic contacts to the SiC substrate. SiC substrates are cleaned and provided to a process chamber. In-situ plasma surface treatments are applied to further clean the surface of the substrate. A silicon oxide dielectric interface layer is deposited in-situ to passivate the surface. Optional plasma surface treatments are applied to further improve the performance of the silicon oxide dielectric interface layer. An aluminum oxide gate dielectric layer is deposited above the silicon oxide dielectric interface layer. | 06-25-2015 |
20150179487 | Multipurpose Combinatorial Vapor Phase Deposition Chamber - In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility. | 06-25-2015 |
20150179508 | Tantalum-Based Copper Barriers and Methods for Forming the Same - Embodiments described herein provide tantalum-based copper barriers and methods for forming such barriers. A dielectric body is provided. A first layer is formed above the dielectric body. The first layer includes tantalum. A second layer is formed above the first layer. The second layer includes manganese. A third layer is formed above the second layer. The third layer includes copper. | 06-25-2015 |
20150179509 | Plasma Treatment of Low-K Surface to Improve Barrier Deposition - Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials. | 06-25-2015 |
20150179914 | Annealed dielectrics and heat-tolerant conductors for superconducting electronics - A interconnect structure for superconducting devices uses a material with a high melting point for the superconductive wiring; examples include refractory metals such as niobium. Because the wiring is tolerant of high temperatures, the interlayer dielectric (e.g., amorphous silicon with or without small amounts of passivants such as hydrogen or fluorine) may be subjected to rapid thermal annealing to reduce defects by driving off excess hydrogen, and optionally partially crystallizing the material. | 06-25-2015 |
20150179915 | Fluorine Passivation During Deposition of Dielectrics for Superconducting Electronics - A dielectric for superconducting electronics (e.g., amorphous silicon, silicon oxide, or silicon nitride) is fabricated with reduced loss tangent by fluorine passivation throughout the bulk of the layer. A fluorinant (gas or plasma) is injected into a process chamber, either continuously or as a series of pulses, while the dielectric is being formed by chemical vapor deposition on a substrate. To further reduce defects, the silicon may be deposited from a silicon precursor that includes multiple co-bonded silicon atoms, such as disilane or trisilane. | 06-25-2015 |
20150179916 | Catalytic Growth of Josephson Junction Tunnel Barrier - A tunnel barrier layer in a superconducting device, such as a Josephson junction, is made from catalytically grown silicon dioxide at a low temperature (<100 C, e.g., 20-30 C) that does not facilitate oxidation or silicide formation at the superconducting electrode interface. The tunnel barrier begins as a silicon layer deposited on a superconducting electrode and covered by a thin, oxygen-permeable catalytic layer. Oxygen gas is dissociated on contact with the catalytic layer, and the resulting oxygen atoms pass through the catalytic layer to oxidize the underlying silicon. The reaction self-limits when all the silicon is converted to silicon dioxide. | 06-25-2015 |
20150179917 | Atomic layer deposition of metal-oxide tunnel barriers using optimized oxidants - Metal oxide tunnel barrier layers for superconducting tunnel junctions are formed by atomic layer deposition. Both precursors include a metal (which may be the same metal or may be different). The first precursor is a metal alkoxide with oxygen bonded to the metal, and the second precursor is an oxygen-free metal precursor with an alkyl-reactive ligand such as a halogen or methyl group. The alkyl-reactive ligand reacts with the alkyl group of the alkoxide, forming a detached by-product and leaving a metal oxide monolayer. The temperature is selected to promote the reaction without causing the metal alkoxide to self-decompose. The oxygen in the alkoxide precursor is bonded to a metal before entering the chamber and remains bonded throughout the reaction that forms the monolayer. Therefore, the oxygen used in this process has no opportunity to oxidize the underlying superconducting electrode. | 06-25-2015 |
20150179918 | Plasma cleaning of superconducting layers - In a “window-junction” formation process for Josephson junction fabrication, a spacer dielectric is formed over the first superconducting electrode layer, then an opening (the “window” is formed to expose the part of the electrode layer to be used for the junction. In an atomic layer deposition (ALD) chamber (or multi-chamber sealed system) equipped with direct or remote plasma capability, the exposed part of the electrode is sputter-etched with Ar, H | 06-25-2015 |
20160005786 | ATOMICALLY PRECISE SURFACE ENGINEERING FOR PRODUCING IMAGERS - High-quality surface coatings, and techniques combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate such high-quality surface coatings are provided. The coatings made in accordance with the techniques set forth by the invention are shown to be capable of forming silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155 nm-300 nm). The surface engineering approaches used demonstrate the robustness of detector performance that is obtained by achieving atomic level precision at all steps in the coating fabrication process. As proof of concept, the characterization, materials, and exemplary devices produced are presented along with a comparison to other approaches. | 01-07-2016 |
20160093772 | Methods for Reducing Interface Contact Resistivity - Provided are methods of forming low resistivity contacts. Also provided are devices having such low resistive contacts. A method may include doping the surface of a structure, such as a gallium nitride layer. Specifically, a dopant containing layer is formed on the surface of the structure using, for example, atomic layer deposition (ALD). The dopant may magnesium. In some embodiments, the dopant containing layer also includes nitrogen. A capping layer may be then formed over the dopant containing layer to prevent dopant desorption. The stack including the structure with the dopant containing layer disposed on its surface is then annealed to transfer dopant from the dopant containing layer into the surface. After annealing, any remaining dopant containing layer is removed. When another component is later formed over the surface, a low resistivity contact is created between this other component and the doped structure. | 03-31-2016 |
Patent application number | Description | Published |
20090128620 | Demultiplexing for stereoplexed film and video applications - A method for demultiplexing frames of compressed image data is provided. The image data includes a series of left compressed images and a series of right compressed images, the right compressed images and left compressed images compressed using a compression function. The method includes receiving the frames of compressed image data via a medium configured to transmit images in single frame format, and performing an expansion function on frames of compressed image data, the expansion function configured to select pixels from the series of left compressed images and series of right compressed images to produce replacement pixels to form a substantially decompressed set of stereo image pairs. Additionally, a system for receiving stereo pairs, multiplexing the stereo pairs for transmission across a medium including single frame formatting, and demultiplexing received data into altered stereo pairs is provided. | 05-21-2009 |
20090184890 | Enhanced zscreen modulator techniques - A method and system for use in conjunction with a push-pull liquid crystal modulator system for creating circularly polarized light of alternating handedness is provided. The method and system comprise a pair of surface mode liquid crystal cells and a driver electrically coupled to the cells. The driver is configured to move an electrical charge using a quenching pulse comprising a relatively brief voltage spike at a beginning of a waveform period. Multiple additional improvements are provided, including reducing the thickness of the LC gap (the distance between cell electrode plates), creating a charge connection or wiring connection to the cell electrodes, employing anti-reflection coating technology, thinner ITO and ITO index matched to the LC material, bonding all possible air to material surfaces, using superior glass, employing more efficient polarizers, and reducing projector blanking time. | 07-23-2009 |
20090246404 | Enhanced projection screen - An apparatus and method for producing a screen is provided. The method includes propelling a quantity of paint comprising metallic flakes, such as aluminum flakes, toward the screen. The method also includes applying at least one magnetic field in a vicinity of the screen, wherein applying the at least one magnetic field causes at least one metallic flake in the quantity of paint to be oriented relative to the screen in a substantially preferred orientation, thereby producing a screen exhibiting beneficial projection qualities, such as brightness. The magnetic field(s) applied may be unsymmetric in the time domain of, for example, an AC component of the magnetic field. | 10-01-2009 |
20100214396 | Dual ZScreen Projection - A system and method for projecting stereoscopic images using a multiple projector arrangement is provided. The design comprises transmitting a first field train from the first projector, the first field train comprising first projector left and right images and concurrently transmitting a second field train from the second projector, the second field train comprising second projector left and right images. The first projector left image is transmitted by the first projector at substantially a same time as the second projector right image is transmitted by the second projector. Alternately, the design comprises transmitting a first field train from the first projector, the first field train comprising first projector left images alternating with first projector right images, and concurrently transmitting a second field train from the second projector, the second field train comprising second projector left images alternating with second projector right images. A quasi-interlacing technique is also provided. | 08-26-2010 |
20100277577 | Enhanced ZScreen modulator techniques - A method and system for use in conjunction with a push-pull liquid crystal modulator system for creating circularly polarized light of alternating handedness is provided. The method and system comprise a pair of surface mode liquid crystal cells and a driver electrically coupled to the cells. The driver is configured to move an electrical charge using a quenching pulse comprising a relatively brief voltage spike at a beginning of a waveform period. Multiple additional improvements are provided, including reducing the thickness of the LC gap (the distance between cell electrode plates), creating a charge connection or wiring connection to the cell electrodes, employing anti-reflection coating technology, thinner ITO and ITO index matched to the LC material, bonding all possible air to material surfaces, using superior glass, employing more efficient polarizers, and reducing projector blanking time. | 11-04-2010 |
20110025832 | Ghost-compensation for improved stereoscopic projection - A method and system for reducing ghost images in plano-stereoscopic image transmissions is provided. The method comprises establishing a plurality of expected ghosting profiles associated with a plurality of predetermined regions on a screen, and compensating for leakage in each predetermined region of a projected left and right eye images by removing an amount of ghost images leaking from the projected left eye image into the projected right eye image and vice versa. The system comprises a processor configured to receive the quantity of ghost artifacts and compute ghost compensation quantities for left eye images and right eye images. The processor is further configured to remove an amount of actual image ghost artifacts leaking from a projected left eye image into a projected right eye image and vice versa. The processor is also configured to compute ghost compensation quantities for each of a plurality of zones, each zone corresponding to a region on a screen having an expected ghosting profile associated therewith. | 02-03-2011 |
20120249756 | Enhanced ZScreen modulator techniques - A method and system for use in conjunction with a push-pull liquid crystal modulator system for creating circularly polarized light of alternating handedness is provided. The method and system comprise a pair of surface mode liquid crystal cells and a driver electrically coupled to the cells. The driver is configured to move an electrical charge using a quenching pulse comprising a relatively brief voltage spike at a beginning of a waveform period. Multiple additional improvements are provided, including reducing the thickness of the LC gap (the distance between cell electrode plates), creating a charge connection or wiring connection to the cell electrodes, employing anti-reflection coating technology, thinner ITO and ITO index matched to the LC material, bonding all possible air to material surfaces, using superior glass, employing more efficient polarizers, and reducing projector blanking time. | 10-04-2012 |