Aketa
Masahiro Aketa, Sakai-Shi JP
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20150033708 | EXHAUST TREATMENT DEVICE FOR DIESEL ENGINE - A diesel engine exhaust treatment device includes an exhaust flow divider in an exhaust path. The flow divider causes exhaust to flow EGR gas with PM unevenly distributed and remaining discharged gas in a divided manner. EGR gas is recirculated to a combustion chamber, and the discharged gas is atmospherically discharged. First and second corona discharge passages are provided at the exhaust flow divider. Corona discharge in the first discharge passage causes the PM, water vapor, and oxygen in the exhaust to generate electron attachment. Electrostatic force causes the exhaust to flow the EGR gas with the electron-attached PM, water vapor, and oxygen unevenly distributed and the remaining discharged gas in a divided manner. The discharged gas is guided to the second discharge passage. Corona discharge in the second discharge passage causes gas molecules in the discharged gas to dissociate, and NOx in the discharged gas is reduced to nitrogen. | 02-05-2015 |
Masahiro Aketa, Osaka JP
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20080202106 | EXHAUST DEVICE FOR A DIESEL ENGINE - An exhaust device for a diesel engine supplies liquid fuel ( | 08-28-2008 |
20120000186 | EXHAUST GAS TREATMENT DEVICE OF DIESEL ENGINE - The present invention relates to an exhaust gas treatment device of a diesel engine that is capable of increasing the concentration of PM in the EGR gas, wherein an exhaust gas separator | 01-05-2012 |
Masatoshi Aketa, Kyoto-Shi, Kyoto JP
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20160005884 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes a semiconductor layer, a trench formed selectively in an obverse surface portion of the semiconductor layer and defining a unit cell of predetermined shape in the obverse surface portion, a second conductivity type layer formed to conform to a portion or an entirety of an inner surface of the trench, an obverse surface layer of a first conductivity type formed so as to be exposed from an obverse surface of the semiconductor layer in the unit cell, a reverse surface layer of the first conductivity type formed so as to be exposed from a reverse surface of the semiconductor layer, a drift layer of the first conductivity type formed between the obverse surface layer and the reverse surface layer of the semiconductor layer and being of lower concentration than the obverse surface layer and the reverse surface layer, a first electrode contacting the obverse surface layer and forming an ohmic contact with the obverse surface layer, and a second electrode contacting the reverse surface layer and forming an ohmic contact with the reverse surface layer. | 01-07-2016 |
Masatoshi Aketa, Kyoto JP
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20100092666 | FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space. | 04-15-2010 |
20120146055 | SiC SEMICONDUCTOR DEVICE - A SiC semiconductor device includes a SiC semiconductor layer having a first-conductivity-type impurity, a field insulation film formed on a front surface of the SiC semiconductor layer and provided with an opening for exposing therethrough the front surface of the SiC semiconductor layer, an electrode connected to the SiC semiconductor layer through the opening of the field insulation film, and a guard ring having a second-conductivity-type impurity and being formed in a surface layer portion of the SiC semiconductor layer to make contact with a terminal end portion of the electrode connected to the SiC semiconductor layer. A second-conductivity-type impurity concentration in a surface layer portion of the guard ring making contact with the electrode is smaller than a first-conductivity-type impurity concentration in the SiC semiconductor layer. | 06-14-2012 |
20120256195 | SEMICONDUCTOR DEVICE - A semiconductor device capable of decreasing a reverse leakage current and a forward voltage is provided. In the semiconductor device, an anode electrode undergoes Schottky junction by being connected to a surface of an SiC epitaxial layer that has the surface, a back surface, and trapezoidal trenches formed on the side of the surface each having side walls and a bottom wall. Furthermore, an edge portion of the bottom wall of each of the trapezoidal trenches is formed to be in the shape bent towards the outside of the trapezoidal trench in the manner that a radius of curvature R satisfies 0.0110-11-2012 | |
20140131738 | SEMICONDUCTOR DEVICE - A semiconductor device capable of decreasing a reverse leakage current and a forward voltage is provided. In the semiconductor device, an anode electrode undergoes Schottky junction by being connected to a surface of an SiC epitaxial layer that has the surface, a back surface, and trapezoidal trenches formed on the side of the surface each having side walls and a bottom wall. Furthermore, an edge portion of the bottom wall of each of the trapezoidal trenches is formed to be in the shape bent towards the outside of the trapezoidal trench in the manner that a radius of curvature R satisfies 0.01 L05-15-2014 | |
20140203299 | SEMICONDUCTOR DEVICE - The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage V | 07-24-2014 |
20150311278 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C. | 10-29-2015 |
20150372154 | SEMICONDUCTOR DEVICE - The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage V | 12-24-2015 |
Masatoshi Aketa, Kyoto-Shi JP
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20150034970 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C. | 02-05-2015 |
20150333190 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - The semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor, a trench that is selectively formed on a surface portion of the semiconductor layer and that defines a unit cell having a predetermined shape on the surface portion, and a surface electrode that is embedded in the trench so as to cover an upper surface of the unit cell and that forms a Schottky junction between the unit cell and the surface electrode, and side surfaces of the trench are formed of only a plurality of planes that have plane orientations crystallographically equivalent to each other. | 11-19-2015 |
Takanori Aketa, Osaka JP
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20120235044 | INFRARED SENSOR MODULE - An infrared sensor module includes: an infrared sensor device disposed on a substrate and configured to receive infrared signals; a signal processing circuit device configured to process an output from the infrared sensor device; a metal case which is provided at a predetermined distance from the infrared sensor device, which includes a light incident window provided with an optical system for coupling an image on the infrared sensor device from external infrared signals, and which accommodates the infrared sensor device and the signal processing circuit device; and a sensor cover which is disposed between the infrared sensor device and the case and the signal processing circuit device, and which includes a light-transmitting portion configured to guide the infrared signals entering via the optical system to the infrared sensor device. | 09-20-2012 |
20130093037 | INFARED SENSOR - The infrared sensor includes: an infrared sensor chip in which a plurality of pixel portions each including a temperature-sensitive portion formed of a thermopile is disposed in an array on one surface side of a semiconductor substrate; and an IC chip that processes an output signal of the infrared sensor chip. A package includes a package main body on which the infrared sensor chip and the IC chip are mounted to be arranged side-by-side, and a package cover that has a lens transmitting infrared rays and is hermetically bonded to the package main body. The package is provided therein with a cover member that includes a window hole through which infrared rays pass into the infrared sensor chip and equalizes amounts of temperature change of hot junctions and cold junctions among the pixel portions, the temperature change resulting from heating of the IC chip. | 04-18-2013 |
20140291527 | INFRARED SENSOR - An infrared sensor includes: an infrared detecting device; a lens disposed above the infrared detecting device; an member that is disposed at a side of an upper surface of the lens and includes an opening; and a gap that intervenes between the member and the lens and has a wider range than the opening. | 10-02-2014 |
20150287696 | MOUNTING METHOD - A mounting method of mounting chips on a substrate includes a temporarily-bonding process, and a main-bonding process. Temporarily-bonding process is to perform a first basic process, repeatedly depending on the number of the chips. First basic process includes a first step and a second step. First step is to align, on a first metal layer of the substrate, a second metal layer of each chip. Second step is to temporarily bond each chip by subjecting the first and second metal layers to solid phase diffusion bonding. Main-bonding process is to perform a second basic process, repeatedly depending on the number of the chips. Second basic process includes a third step and a fourth step. Third step is to recognize a position of each chip temporarily mounted on the substrate. Fourth step is to firmly bond each chip by subjecting the first and second metal layers to liquid phase diffusion bonding. | 10-08-2015 |
Takanori Aketa, Hirakata-Shi JP
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20100207134 | LED LIGHTING DEVICE - An LED lighting device comprises a plurality of light emitting units which is configured to emit visible light having different colors which are mixed with each other to produce a white light. Each the light emitting units is composed of an LED chip and a phosphor. The LED chip is configured to generate light. The phosphor has a property of giving off a light of a predetermined color when the phosphor is excited by the light from the LED chip. The LED chip is selected from a group consisting of a blue LED chip, a UV LED chip, ad a violet LED chip. Each the phosphor is selected to give off the light of a predetermined color different from one another. | 08-19-2010 |
20100207135 | LIGHT EMITTING DEVICE - A light emitting device free from void-generation at a bonding between an LED chip and a metal layer provided on a dielectric substrate. This light emitting device is also free from short-circuit between the closely arranged LED chips. This light emitting device includes a plurality of the LED chips, one dielectric substrate (sub-mount member) which is made of a dielectric substrate for holding the LED chips. The dielectric substrate is formed with a plurality of supporting platforms which respectively holds the LED chips. Each supporting platform is provided with a metal layer which is soldered to the LED chip. The supporting platforms are configured to leave a groove between the adjacent ones of the supporting platforms. Each supporting platform is provided at its side surface with a solder-leading portion made of a material having a solder-wettablity higher than that of the supporting platform. | 08-19-2010 |
Takashi Aketa, Gunma JP
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20100216920 | ADHESIVE SILICONE RUBBER COMPOSITION AND SEPARATOR SEAL MATERIAL FOR FUEL CELLS - An adhesive silicone rubber composition comprising (A) 100 pbw of an organopolysiloxane containing at least two silicon-bonded alkenyl radicals, (B) 0.5-20 pbw of an organohydrogenpolysiloxane containing at least two Si—H radicals, (C) a hydrosilylation catalyst, and (D) 0.1-50 pbw of an organosilicon compound having at least one phenyl structure, at least one alicyclic epoxy radical, and at least one Si—H radical is applicable to an electrolyte membrane and a separator in a polymer electrolyte fuel cell to form a firm integrally molded part. | 08-26-2010 |
Takashi Aketa, Annaka-Shi JP
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20080289760 | HEAT-CURABLE FLUOROPOLYETHER ADHESIVE COMPOSITION AND BONDING METHOD - A heat-curable fluoropolyether adhesive composition comprising (A) a linear polyfluoro compound having at least two alkenyl groups and a perfluoropolyether structure, (B) a fluorinated organohydrogensiloxane having at least two SiH groups, (C) a platinum group metal catalyst, (D) an organosiloxane having at least one SiH group and at least one epoxy and/or trialkoxysilyl group, and (E) a compound having at least two allyloxycarbonyl groups can be cured to metal and plastic substrates by heating at a temperature from 20° C. to less than 100° C. | 11-27-2008 |
20090274845 | ADDITION CURABLE SILICONE ADHESIVE COMPOSITION AND CURED PRODUCT THEREOF - An addition curable silicone adhesive composition that can be cured at room temperature, exhibits favorable adhesiveness, and yields a cured product upon curing that exhibits excellent transparency and a suitable degree of hardness. The addition curable silicone adhesive composition of the present invention comprises: (A) a diorganopolysiloxane containing at least two silicon atom-bonded alkenyl groups, (B) a three dimensional organopolysiloxane resin that comprises trifunctional siloxane units and/or tetrafunctional siloxane units represented by SiO | 11-05-2009 |
20130102739 | METHOD FOR IMPARTING HYDROPHILICITY TO SILICONE RUBBER - A silicone rubber which is formed by curing an addition-curable silicone rubber composition comprising a branched organohydrogenpolysiloxane is hydrophilized by subjecting the surface of the silicone rubber to plasma polymerization in the presence of a gas mixture containing methane and oxygen. The method readily imparts hydrophilicity to the silicone rubber surface and the hydrophilic surface is maintained for a long period. | 04-25-2013 |