Patent application number | Description | Published |
20130149822 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is provided. A method for fabricating a semiconductor device includes providing a semiconductor substrate having a first conductive type. An epitaxy layer having the first conductive type is formed on the semiconductor substrate. First trenches are formed in the epitaxy layer. First insulating liner layers are formed on sidewalls and bottoms of the first trenches. A first dopant having the first conductive type dopes the epitaxy layer from the sidewalls of the first trenches to form first doped regions. A first insulating material is filled into the first trenches. Second trenches are formed in the epitaxy layer. Second insulating liner layers are formed on sidewalls and bottoms of the second trenches. A second dopant having a second conductive type dopes the epitaxy layer from the sidewalls of the second trenches to form second doped regions. | 06-13-2013 |
20130175607 | SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A semiconductor device is provided. The semiconductor device includes a substrate having a first doping region and an overlying second doping region, wherein the first and second doping regions have a first conductivity type and wherein the second doping region has at least one first trench and at least one second trench adjacent thereto. A first epitaxial layer is disposed in the first trench and has a second conductivity type. A second epitaxial layer is disposed in the second trench and has the first conductivity type, wherein the second epitaxial layer has a doping concentration greater than that of the second doping region and less than that of the first doping region. A gate structure is disposed on the second trench. A method of fabricating a semiconductor device is also disclosed. | 07-11-2013 |
20130175608 | SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A semiconductor device is provided. The semiconductor device includes a plurality of first epitaxial layers, a second epitaxial layer and a gate structure. The plurality of first epitaxial layers is stacked on a substrate and has a first conductivity type. Each first epitaxial layer includes at least one first doping region and at least one second doping region adjacent thereto. The first doping region has a second conductivity and the second doping region has the first conductivity type. The second epitaxial layer is disposed on the plurality of first epitaxial layers, having the first conductivity type. The second epitaxial layer has a trench therein and a third doping region having the second conductivity type is adjacent to a sidewall of the trench. The gate structure is disposed on the second epitaxial layer above the second doping region. A method of fabricating a semiconductor device is also disclosed. | 07-11-2013 |
20130193508 | SEMICONDUCTOR DEVICE WITH SUPER JUNCTION STRUCTURE AND METHOD FOR FABRICATING THE SAME - A semiconductor device with a super-junction structure is provided, including: a semiconductor substrate having a first conductivity type; an epitaxial layer having the first conductivity type formed over the semiconductor substrate; a first doping region having the first conductive type formed in a portion of the epitaxial layer; a second doping region having a second conductivity type formed in a portion of the of the epitaxial layer; a third doping region having the second conductivity type formed in a portion of the of the epitaxial layer, wherein the doping region partially comprises doped polysilicon materials having the second conductivity type; a gate dielectric layer formed over the epitaxial layer, partially overlying the well region; and a gate electrode formed over a portion of the gate dielectric layer. | 08-01-2013 |
20140035029 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device including a semiconductor substrate of a first conductivity type and an epitaxial layer of the first conductivity type disposed thereon is disclosed. Pluralities of first and second trenches are alternately arranged in the epitaxial layer. First and second doped regions of the first conductivity type are formed in the epitaxial layer and surrounding each first trench. A third doped region of a second conductivity type is formed in the epitaxial layer and surrounding each second trench. A first dopant in the first doped region has diffusivity larger than that of a second dopant in the second doped region. A method for fabricating a semiconductor device is also disclosed. | 02-06-2014 |
20150056771 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH SUPER JUNCTION STRUCTURE - A semiconductor device with a super-junction structure is provided, including: a semiconductor substrate having a first conductivity type; an epitaxial layer having the first conductivity type formed over the semiconductor substrate; a first doping region having the first conductive type formed in a portion of the epitaxial layer; a second doping region having a second conductivity type formed in a portion of the of the epitaxial layer; a third doping region having the second conductivity type formed in a portion of the of the epitaxial layer, wherein the doping region partially comprises doped polysilicon materials having the second conductivity type; a gate dielectric layer formed over the epitaxial layer, partially overlying the well region; and a gate electrode formed over a portion of the gate dielectric layer. | 02-26-2015 |
Patent application number | Description | Published |
20100206491 | VENETIAN BLIND WITH A THIN PROFILE LATTICED STRIP - The present invention provides a venetian blind with a thin profile latticed strip. The blind includes a bracket, several thin blades arranged under the bracket with threading holes, a blade regulator, and at least two narrow shaped and thin profile latticed strips extending from the bottom of the bracket. The strips each include a front and a rear strip body as well as a blade span connected transversely between front and rear strip bodies. The front and rear strip bodies are positioned correspondingly to the threading hole of the thin blade. When the thin blade is adjusted to a vertical light-shading angle, the threading hole of the thin blade can be fully blocked by the front and rear strip bodies. Due to the thin-profile structure of the latticed strip, when the thin blades are superimposed, a compact spacing among the thin blades can be kept. | 08-19-2010 |
20100319859 | LADDER CORD LATTICE FOR WINDOW BLINDS - The present invention provides a ladder cord lattice for window blinds. The ladder cord lattice includes a front strip, a rear strip and multiple slat sustaining portion arranged at intervals between the front and rear strips. There is a connecting and positioning portion, being integrally formed on the top of front and rear strip and lacking the slat sustaining portion. There are tailoring point identification bulges, and snapper locating point identification bulges. There is a clear identification point for tailoring and feeding of ladder cord lattice and for fixing of the snapper via the tailoring point identification bulges and snapper locating point identification bulges, thus reducing the error of feeding and assembly, and improving the operating efficiency, accuracy and quality for higher applicability and industrial efficiency. | 12-23-2010 |
20110180220 | SHUTTER LATTICE - A lattice with lifting ring has a front strip and a rear strip arranged at interval, which are extended to define a top and a bottom. Multiple blade sustaining portions are linked between the front and rear strips at interval. A connecting and positioning portion is integrally formed on top of the front and rear strips. The connecting and positioning portion of a straight pattern eliminates the problem of cutting off several blade sustaining portions. A pair of lifting rings are integrally formed on the end of said connecting and positioning portion at top of the front and rear strips. A threading portion is formed on said lifting ring for positioning onto a preset retaining location of the existing shutter's rotary braking seat. When the lattice is assembled onto the rotary braking seat, the lifting rings can be used for sleeving onto the retaining location of the rotary braking seat. | 07-28-2011 |