Patent application number | Description | Published |
20080246109 | SOI substrate, method for manufacturing the same, and semiconductor device - An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side. | 10-09-2008 |
20080290393 | Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film - An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insulating film with few electron traps. An insulating film including oxygen is subjected to plasma treatment using a high frequency under the conditions where the electron density is 1×10 | 11-27-2008 |
20080308897 | Substrate for manufacturing semiconductor device and manufacturing method thereof - A substrate with which a semiconductor device with excellent electric characteristics and high reliability can be manufactured is provided. An aspect of the invention is a method for manufacturing a substrate for manufacturing a semiconductor device: a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are stacked in this order over a surface of a semiconductor substrate by a thermal CVD method, and then a weakened layer is formed at a given depth of the semiconductor substrate; the semiconductor substrate and a substrate having an insulating surface are arranged to face each other, and the second silicon oxide film provided for the semiconductor substrate and a supporting substrate are bonded to each other; and the semiconductor substrate is separated at the weakened layer by heat treatment, whereby a semiconductor film separated from the semiconductor substrate is left over the substrate having the insulating surface. | 12-18-2008 |
20080315351 | Semiconductor substrate and maehtod for manufacturing the same - A semiconductor device and a method for manufacturing thereof are provided. The method includes a step of forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate, a step of forming a second insulating film containing silicon and nitrogen as its composition over the first insulating film, a step of irradiating the second insulating film with first ions to form a separation layer in the single-crystal semiconductor substrate, a step of irradiating the second insulating film with second ions so that halogen is contained in the first insulating film, and a step of performing heat treatment to separate the single-crystal semiconductor substrate with a single-crystal semiconductor film left over the supporting substrate. | 12-25-2008 |
20080318394 | Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device - A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided. | 12-25-2008 |
20090001452 | Semiconductor device and manufacturing method thereof - The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process. | 01-01-2009 |
20090011575 | Manufacturing method of SOI substrate and manufacturing method of semiconductor device - It is object to provide a manufacturing method of an SOI substrate provided with a single-crystal semiconductor layer, even in the case where a substrate having a low allowable temperature limit, such as a glass substrate, is used and to manufacture a high-performance semiconductor device using such an SOI substrate. Light irradiation is performed on a semiconductor layer which is separated from a semiconductor substrate and bonded to a support substrate having an insulating surface, using light having a wavelength of 365 nm or more and 700 nm or less, and a film thickness d (nm) of the semiconductor layer which is irradiated with the light is made to satisfy d=λ/2n×m±α (nm), when a light wavelength is λ (nm), a refractive index of the semiconductor layer is n, m is a natural number greater than or equal to 1 (m=1, 2, 3, 4, . . . ), and 0≦α≦10 is satisfied. | 01-08-2009 |
20090017568 | Semiconductor device, electronic device and method for manufacturing semiconductor device - A semiconductor device of the present invention is manufactured by the following steps: forming a single-crystal semiconductor layer over a substrate having an insulating surface; irradiating a region of the single-crystal semiconductor layer with laser light; forming a circuit of a pixel portion using a region of the single-crystal semiconductor layer which is not irradiated with the laser light; and forming a driver circuit for driving the circuit of the pixel portion using the region of the single-crystal semiconductor layer which is irradiated with the laser light. Thus, a semiconductor device using a single-crystal semiconductor layer which is suitable for a peripheral driver circuit region and a single-crystal semiconductor layer which is suitable for a pixel region can be provided. | 01-15-2009 |
20090072343 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE - A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm. | 03-19-2009 |
20090096054 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device including a semiconductor substrate is provided. The semiconductor substrate includes a substrate having an insulating surface, and a plurality of stacks over the substrate having an insulating surface. Each of the plurality of stacks includes a bonding layer over the substrate having an insulating surface, an insulating layer over the bonding layer, and a single crystal semiconductor layer over the insulating layer. The substrate having an insulating surface has a depression, and the depression is provided between one of the plurality of stacks and another adjacent one of the plurality of stacks. | 04-16-2009 |
20090098739 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate. | 04-16-2009 |
20090102008 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor substrate having an SOI layer is provided. Between an SOI layer and a glass substrate, a bonding layer is provided which is formed of one layer or a plurality of layers of phosphosilicate glass, borosilicate glass, and/or borophosphosilicate glass, using organosilane as one material by a thermal CVD method at a temperature of 500° C. to 800° C. | 04-23-2009 |
20090111236 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An object is to reduce occurrence of defective bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object is to provide a method for manufacturing an SOI substrate by which an increase in the number of steps can be suppressed. A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween. | 04-30-2009 |
20090111248 | MANUFACTURING METHOD OF SOI SUBSTRATE - A damaged region is formed by generation of plasma by excitation of a source gas, and by addition of ion species contained in the plasma from one of surfaces of a single crystal semiconductor substrate; an insulating layer is formed over the other surface of the single crystal semiconductor substrate; a supporting substrate is firmly attached to the single crystal semiconductor substrate so as to face the single crystal semiconductor substrate with the insulating layer interposed therebetween; separation is performed at the damaged region into the supporting substrate to which a single crystal semiconductor layer is attached and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; dry etching is performed on a surface of the single crystal semiconductor layer attached to the supporting substrate; the single crystal semiconductor layer is recrystallized by irradiation of the single crystal semiconductor layer with a laser beam to melt at least part of the single crystal semiconductor layer. | 04-30-2009 |
20090162992 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device. | 06-25-2009 |
20090203176 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To suppress generation of dangling bonds, the present invention relates to a method for manufacturing a semiconductor device including the steps of: forming a semiconductor film; forming a gate insulating film and a gate electrode over the semiconductor film; forming an impurity region in the semiconductor film by addition of an impurity element having one conductivity type thereto; forming an insulating film containing fluorine with the semiconductor film, the gate insulating film, and the gate electrode covered therewith; heating the semiconductor film and the insulating film containing fluorine; and forming a wiring, which is electrically connected to the impurity region, over the insulating film containing fluorine. The insulating film containing fluorine is any one of a silicon oxide film containing fluorine, a silicon oxide film containing fluorine and nitrogen, or a silicon nitride film containing fluorine. | 08-13-2009 |
20100006940 | SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF - An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate. | 01-14-2010 |
20100075470 | METHOD OF MANUFACTURING SOI SUBSTRATE - After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment. | 03-25-2010 |
20100136765 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - When printing is performed on a base substrate with a laser after a single crystal silicon layer is transferred to the base substrate, there are problems such as ablation of the single crystal silicon layer in the peripheral portion of a printed dot or attachment of glass chips or the like to the surface of the single crystal silicon layer. After printing is performed on the bonding surface of a silicon wafer with a laser, the surface of the silicon wafer is polished by CMP (chemical mechanical polishing), so that the projection in the peripheral portion of the printed dot is removed. After that, the silicon wafer is bonded to the base substrate. Since the depression of the printed dot remains to some extent by a chemical etching effect even after the polishing by CMP, the single crystal silicon layer is not transferred only at the depression portion at the time of the transfer; accordingly, the information is left on the base substrate. | 06-03-2010 |
20100237458 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing thereof are provided. The method includes a step of forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate, a step of forming a second insulating film containing silicon and nitrogen as its composition over the first insulating film, a step of irradiating the second insulating film with first ions to form a separation layer in the single-crystal semiconductor substrate, a step of irradiating the second insulating film with second ions so that halogen is contained in the first insulating film, and a step of performing heat treatment to separate the single-crystal semiconductor substrate with a single-crystal semiconductor film left over the supporting substrate. | 09-23-2010 |
20100291753 | SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided. | 11-18-2010 |
20110027968 | SEMICONDUCTOR DEVICE - A semiconductor device including a plurality of field-effect transistors which are stacked with a planarization layer interposed therebetween over a substrate having an insulating surface, in which semiconductor layers in the plurality of field-effect transistors are separated from semiconductor substrates, and the semiconductor layers are bonded to an insulating layer formed over the substrate having an insulating surface or an insulating layer formed over the planarization layer. | 02-03-2011 |
20110053343 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device. | 03-03-2011 |
20110073934 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process. | 03-31-2011 |
20110115045 | SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A substrate with which a semiconductor device with excellent electric characteristics and high reliability can be manufactured is provided. An aspect of the invention is a method for manufacturing a substrate for manufacturing a semiconductor device: a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are stacked in this order over a surface of a semiconductor substrate by a thermal CVD method, and then a weakened layer is formed at a given depth of the semiconductor substrate; the semiconductor substrate and a substrate having an insulating surface are arranged to face each other, and the second silicon oxide film provided for the semiconductor substrate and a supporting substrate are bonded to each other; and the semiconductor substrate is separated at the weakened layer by heat treatment, whereby a semiconductor film separated from the semiconductor substrate is left over the substrate having the insulating surface. | 05-19-2011 |
20110227139 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF INSULATING FILM - An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insulating film with few electron traps. An insulating film including oxygen is subjected to plasma treatment using a high frequency under the conditions where the electron density is 1×10 | 09-22-2011 |
20110248377 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor substrate having an SOI layer is provided. Between an SOI layer and a glass substrate, a bonding layer is provided which is formed of one layer or a plurality of layers of phosphosilicate glass, borosilicate glass, and/or borophosphosilicate glass, using organosilane as one material by a thermal CVD method at a temperature of 500° C. to 800° C. | 10-13-2011 |
20110291173 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process. | 12-01-2011 |
20110316082 | SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF - An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate. | 12-29-2011 |
20120025274 | SOI SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE - An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side. | 02-02-2012 |
20120282757 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween. | 11-08-2012 |
20130149605 | NEGATIVE ELECTRODE FOR LITHIUM SECONDARY BATTERY, LITHIUM SECONDARY BATTERY, AND MANUFACTURING METHODS THEREOF - A lithium secondary battery which has high charge-discharge capacity, can be charged and discharged at high speed, and has little deterioration in battery characteristics due to charge and discharge is provided. A negative electrode includes a current collector and a negative electrode active material layer. The current collector includes a plurality of protrusion portions extending in a substantially perpendicular direction and a base portion connected to the plurality of protrusion portions. The protrusion portions and the base portion are formed using the same material containing titanium. A top surface of the base portion and at least a side surface of the protrusion portion are covered with the negative electrode active material layer. The negative electrode active material layer may be covered with graphene. | 06-13-2013 |
20140035028 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process. | 02-06-2014 |
20140103409 | SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF - An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate. | 04-17-2014 |
20140329371 | SOI SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE - An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side. | 11-06-2014 |