Kil-Ho
Kil-Ho Jeong, Ichon-Shi KR
Patent application number | Description | Published |
---|---|---|
20100075715 | APPARATUS AND METHOD FOR AUTOMATICALLY DETECTING PRESENCE OF EXTERNAL DEVICE IN MOBILE TERMINAL - In an apparatus and method for automatically detecting the presence of an external device in a port of a mobile terminal, the external device is automatically enabled without the additional operation of the mobile terminal when plugged into a jack. The mobile terminal may be safeguarded against severe damage being done thereto by mistakenly choosing options to enable an external device while an earphone/microphone set is plugged in the jack of a mobile terminal. | 03-25-2010 |
Kil-Ho Jeong, Seoul KR
Patent application number | Description | Published |
---|---|---|
20130130744 | APPARATUS AND METHOD FOR AUTOMATICALLY DETECTING PRESENCE OF EXTERNAL DEVICE IN MOBILE TERMINAL - In an apparatus and method for automatically detecting the presence of an external device in a port of a mobile terminal, the external device is automatically enabled without the additional operation of the mobile terminal when plugged into a jack. The mobile terminal may be safeguarded against severe damage being done thereto by mistakenly choosing options to enable an external device while an earphone/microphone set is plugged in the jack of a mobile terminal. | 05-23-2013 |
20140187290 | APPARATUS AND METHOD FOR AUTOMATICALLY DETECTING PRESENCE OF EXTERNAL DEVICE IN MOBILE TERMINAL - In an apparatus and method for automatically detecting the presence of an external device in a port of a mobile terminal, the external device is automatically enabled without the additional operation of the mobile terminal when plugged into a jack. The mobile terminal may be safeguarded against severe damage being done thereto by mistakenly choosing options to enable an external device while an earphone/microphone set is plugged in the jack of a mobile terminal. | 07-03-2014 |
Kil-Ho Kim, Gyeonggi-Do KR
Patent application number | Description | Published |
---|---|---|
20110203322 | Method for Manufacturing Float Glass and Apparatus for Manufacturing the Same - The present invention provides a method for manufacturing a float glass by floating the glass on a molten tin that is contained in a molten tin bath, which includes the steps of a) discharging a portion of the molten tin in the molten tin bath to the outside of the molten tin bath; b) removing oxygen dissolved in the molten tin that is discharged from the molten tin bath by injecting an oxygen stripping gas that contains hydrogen into the molten tin; and c) returning the molten tin from which oxygen is removed to the molten tin bath, and an apparatus for manufacturing the same. | 08-25-2011 |
Kil-Ho Lee, Wappingers Falls, NY US
Patent application number | Description | Published |
---|---|---|
20080246100 | HIGH-K DIELECTRIC FILM, METHOD OF FORMING THE SAME AND RELATED SEMICONDUCTOR DEVICE - A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content. | 10-09-2008 |
20100047991 | HIGH-K DIELECTRIC FILM, METHOD OF FORMING THE SAME AND RELATED SEMICONDUCTOR DEVICE - A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content. | 02-25-2010 |
Kil-Ho Lee, Hwaseong-Si KR
Patent application number | Description | Published |
---|---|---|
20140038385 | NONVOLATILE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - Nonvolatile memory devices and methods of fabricating the same, include, forming a transistor in a first region of a substrate, forming a contact which is connected to the transistor, forming an information storage portion, which is disposed two-dimensionally, in a second region of the substrate, sequentially forming a stop film and an interlayer insulating film which cover the contact and the information storage portion, forming a first trench, which exposes the stop film, on the contact, and forming a second trench which extends through the stop film to expose the contact, wherein a bottom surface of the first trench is lower than a bottom surface of the information storage portion. | 02-06-2014 |
20140117560 | Semiconductor Structures and Methods of Manufacturing the Same - A semiconductor device and methods of forming a semiconductor device are disclosed. In the methods, a layer, such as an insulating interlayer, is formed on a substrate. A first trench is formed in the layer, and a mask layer is formed in the first trench. The mask layer has a first thickness from a bottom surface of the first trench to the top of the mask layer. The mask layer is patterned to form a mask that at least partially exposes a sidewall of the first trench. A portion of the mask adjacent to the exposed sidewall of the first trench has a second thickness smaller than the first thickness. The layer is etched to form a second trench using the mask as an etching mask. The second trench is in fluid communication with the first trench. A conductive pattern is formed in the first trench and the second trench. | 05-01-2014 |
20140264516 | METHODS OF FORMING PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME - An insulation layer is formed on a substrate. A first mask is formed on the insulation layer. The first mask includes a plurality of line patterns arranged in a second direction. The plurality of line patterns extend in a first direction substantially perpendicular to the second direction. A second mask is formed on the insulation layer and the first mask. The second mask includes an opening partially exposing the plurality of line patterns. The opening has an uneven boundary at one of a first end portion in the first direction and a second end portion in a third direction substantially opposite to the first direction. The insulation layer is partially removed using the first mask and the second mask as an etching mask, thereby forming a plurality of first trenches and second trenches. The plurality of first trenches and the second trenches are arranged in a staggered pattern. | 09-18-2014 |
20140377950 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device, including forming a molding layer; forming a damascene mask layer and mask layer on the molding layer; forming a mask layer pattern by etching the mask layer; forming a damascene pattern by partially etching the damascene mask layer; forming a damascene mask layer on the mask layer pattern to bury the damascene pattern; forming a damascene pattern partially overlapping the damascene pattern by etching the damascene mask layer and the mask layer pattern; connecting the damascene pattern and the damascene pattern by removing a portion of the mask layer pattern exposed by the damascene pattern; forming a damascene mask layer on the damascene mask layer to bury the damascene pattern; and forming a trench under the damascene patterns by etching the damascene mask layers and the molding layer using remaining portions of the mask layer pattern. | 12-25-2014 |
Kil-Ho Shin, Suwon-Si KR
Patent application number | Description | Published |
---|---|---|
20090097583 | APPARATUS AND METHOD FOR SELECTING OPERATION MODE IN MIMO COMMUNICATION SYSTEM - An apparatus and a method for selecting an operation mode to improve a throughput in a mobile communication system are provided. The apparatus includes a Carrier to Interference and Noise Ratio (CINR) predictor for predicting a probable average and dispersion for a CINR measured using a preamble of a received pilot signal or radio signal, a metric calculator for calculating a throughput for each Modulation and Coding Scheme Level (MCS_Level) by using the probable average and dispersion for the predicted CINR and for selecting an MCS_Level having a maximum throughput, and an operation mode selector for selecting an operation mode of the selected MCS_Level having the maximum throughput. | 04-16-2009 |