Patent application number | Description | Published |
20090027812 | MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCTION METHOD - The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 μm | 01-29-2009 |
20130320813 | DIELECTRIC DEVICE - A dielectric device has a first electrode film having a non-oriented or amorphous structure, a dielectric film provided on the first electrode film and having a preferentially oriented structure, and a second electrode film provided on the dielectric film and having a non-oriented or amorphous structure. | 12-05-2013 |
20130320814 | PIEZOELECTRIC DEVICE - A piezoelectric device has a first electrode film, a piezoelectric film provided on the first electrode film, and a second electrode film provided on the piezoelectric film. At least one of the pair of electrode films is composed of an alloy, and a major component of the alloy is a metal selected from the group consisting of Ti, Al, Mg, and Zn. | 12-05-2013 |
20140035439 | PIEZOELECTRIC DEVICE - A piezoelectric device according to the present invention is provided with a first electrode film, a first nonmetal electroconductive intermediate film provided on the first electrode film, a piezoelectric film provided on the first nonmetal electroconductive intermediate film, a second nonmetal electroconductive intermediate film provided on the piezoelectric film, and a second electrode film provided on the second nonmetal electroconductive intermediate film. A linear expansion coefficient of the first nonmetal electroconductive intermediate film is larger than those of the first electrode film and the piezoelectric film, and a linear expansion coefficient of the second nonmetal electroconductive intermediate film is larger than those of the second electrode film and the piezoelectric film. | 02-06-2014 |
20140035440 | PIEZOELECTRIC DEVICE - A piezoelectric device according to the present invention is provided with a pair of electrode films, a piezoelectric film sandwiched in between the pair of electrode films, and a stress control film which is in direct contact with a surface of at least one of the pair of electrode films, on the side where the electrode film is not in contact with the piezoelectric film, and which has a linear expansion coefficient larger than those of the relevant electrode film and the piezoelectric film. | 02-06-2014 |
20140084749 | THIN FILM PIEZOELECTRIC DEVICE - A thin film piezoelectric device according to the present invention includes a pair of electrode layers and a piezoelectric thin film interposed between the pair of electrode layers, wherein the piezoelectric thin film contains a rare gas element and has a content gradient of the rare gas element in the thickness direction of the piezoelectric thin film. | 03-27-2014 |
20140084754 | THIN FILM PIEZOELECTRIC DEVICE - A thin film piezoelectric device according to the present invention includes a potassium sodium niobate-based piezoelectric thin film having an average crystal grain diameter of 60 nm or more and 90 nm or less, and a pair of electrode films configured to hold the piezoelectric thin film therebetween. | 03-27-2014 |
20140145555 | THIN-FILM PIEZOELECTRIC ELEMENT, THIN-FILM PIEZOELECTRIC ACTUATOR, THIN-FILM PIEZOELECTRIC SENSOR, HARD DISK DRIVE, AND INKJET PRINTER APPARATUS - There are provided a thin-film piezoelectric element including a piezoelectric thin film which has an alkali niobate-based perovskite structure represented by the composition formula (K | 05-29-2014 |
20140265723 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HARD DISK DRIVE, AND INKJET PRINTER DEVICE - A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO | 09-18-2014 |
20140265724 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HARD DISK DRIVE, AND INKJET PRINTER DEVICE - A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO | 09-18-2014 |
20140339961 | THIN-FILM PIEZOELECTRIC ELEMENT, THIN-FILM PIEZOELECTRIC ACTUATOR, THIN-FILM PIEZOELECTRIC SENSOR, HARD DRIVE DISK, AND INKJET PRINTER - A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A | 11-20-2014 |
20150109372 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HARD DISK DRIVE, AND INK-JET PRINTER DEVICE - The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO | 04-23-2015 |
20150194592 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HARD DISK DRIVE, AND INKJET PRINTER DEVICE - An object is to reduce the leakage current of a piezoelectric element including a potassium-sodium niobate thin film, enhance the reliability of the piezoelectric element and, in addition, enhance the withstand voltage by including a pair of electrodes and a piezoelectric layer sandwiched between the above-described pair of electrode layers, wherein the above-described piezoelectric layer is provided with at least one layer each of first piezoelectric layer which is a potassium-sodium niobate thin film substantially not containing Mn (manganese) and second piezoelectric layer which is a potassium-sodium niobate thin film containing Mn. | 07-09-2015 |
20150207057 | THIN FILM PIEZOELECTRIC ELEMENT, THIN FILM PIEZOELECTRIC ACTUATOR, AND THIN FILM PIEZOELECTRIC SENSOR; AND HARD DISK DRIVE, AND INKJET PRINTER - An object is to increase the amount of displacement of a thin-film piezoelectric element including a piezoelectric thin film having an uneven-shaped contact surface with the planar shape and the layer structure of the thin-film piezoelectric element kept unchanged. The thin-film piezoelectric element includes a pair of electrode layers and a piezoelectric thin film sandwiched between the pair of electrode layers, in which a surface roughness P-V of an interface between the piezoelectric thin film and at least one of the pair of electrode layers is 220 nm or more and 500 nm or less. | 07-23-2015 |
Patent application number | Description | Published |
20100203307 | ADHESIVE TAPE - Disclosed is an adhesive tape containing a flux activation compound having a carboxyl group and/or a phenolic hydroxyl group, a thermosetting resin and a film-forming resin. In this adhesive tape, the thermosetting resin may be an epoxy resin, and may contain a curing agent. The curing agent may be an imidazole compound and/or a phosphorus compound. This adhesive tape can be used as an interlayer material for circuit boards or multilayer flexible printed wiring boards. | 08-12-2010 |
20110221075 | METHOD OF MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE - Provided is a method of manufacturing an electronic device comprising a first electronic component having a first terminal and a second electronic component having a second terminal, wherein said first electric component is electrically connected to said second electronic component by connecting said first terminal to said second terminal with solder, | 09-15-2011 |
20110262697 | FLEXIBLE SUBSTRATE AND ELECTRONIC DEVICE - A flexible substrate | 10-27-2011 |
20120061820 | METHOD FOR MANUFACTURING ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT - Provided is a method for manufacturing an electronic component by using a solder joining method for bonding a first electronic component having a metal electrode with a second electronic component having a solder electrode, the method comprising; (i) forming a resin layer containing a thermosetting resin on at least one of the solder joint surfaces of said first electronic component and said second electronic component; (ii) positioning said metal electrode of said first electronic component and said solder electrode of said second electronic component to face each other, heating said positioned electrodes and applying pressure, and thereby bringing said metal electrode and said solder electrode into contact; (iii) heating electronic components while applying pressure thereby fusion bonding said solder to said metal electrode; and (iv) heating said resin layer. | 03-15-2012 |
20120118939 | PROCESS AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - The process for manufacturing the semiconductor device and the apparatus, which achieve stable production of semiconductor devices with improved connection reliability, is presented. First terminals of circuit boards | 05-17-2012 |
20130324641 | METHOD FOR MANUFACTURING ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT - Provided is a method for manufacturing an electronic component by using a solder joining method for bonding a first electronic component having a metal electrode with a second electronic component having a solder electrode, the method comprising; (i) forming a resin layer containing a thermosetting resin on at least one of the solder joint surfaces of said first electronic component and said second electronic component; (ii) positioning said metal electrode of said first electronic component and said solder electrode of said second electronic component to face each other, heating said positioned electrodes and applying pressure, and thereby bringing said metal electrode and said solder electrode into contact; (iii) heating electronic components while applying pressure thereby fusion bonding said solder to said metal electrode; and (iv) heating said resin layer. | 12-05-2013 |
Patent application number | Description | Published |
20080237535 | Composition for polishing semiconductor wafer, and method of producing the same - A composition for polishing a semiconductor wafer contains fumed silica particles that are produced by wet grinding using a grinding medium and that have characteristics (A) to (C): | 10-02-2008 |
20080287038 | Polishing composition for semiconductor wafer, method for production thereof and polishing method - The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6. | 11-20-2008 |
20080311750 | Polishing composition for semiconductor wafer and polishing method - The present invention relates to a polishing composition for a semiconductor wafer which is excellent in polishing property, and a polishing method. The polishing composition for a semiconductor wafer comprises colloidal silica consisting of non-spherical silica particles having a ratio of long axis to short axis of 1.5 to 15. The polishing method for a semiconductor wafer uses the polishing composition. The polishing composition can provide a remarkably high polishing rate compared with a polishing composition using spherical colloidal silica, and can provide good mirror-polishing without causing scratches. In addition, small alkali metal content enables reduction of adverse effects on a semiconductor wafer, such as residual abrasives after polishing. | 12-18-2008 |
20090253813 | Colloidal silica consisting of silica particles fixing nitrogen contained alkaline compound - A colloidal silica comprising, silica particles inside of which or on the surface of which a nitrogen containing alkaline compound is fixed, wherein said silica particles are prepared by forming and growing colloid particles using the nitrogen containing alkaline compound. Said colloidal silica can be prepared by preparing active silicic acid aqueous solution contacting silicate alkali aqueous solution with cation exchange resin, adding the nitrogen containing alkaline compound and heating, and then growing up particles by build-up method. | 10-08-2009 |
20090267021 | Colloidal silica for semiconductor wafer polishing and production method thereof - Colloidal silica forming nonspherical particles cluster, whose long axis/short axis ratio of silica particles is of 1.2 to 20, and average long axis/short axis ratio of 3 to 15. This colloidal silica can be produced by forming particles by adding basic nitrogen compounds to an active silicic acid aqueous solution, the solution which produced by hydrolysis of tetraalkoxysilane, while heating, then growing particles by using a build up method. | 10-29-2009 |
20100163786 | Polishing composition for semiconductor wafer - A polishing composition for semiconductor wafer polishing comprising, colloidal silica prepared from an active silicic acid aqueous solution obtained by removal of alkali from alkali silicate and at least one nitrogen containing basic compound selected from a group consisting of ethylenediamine, diethylenediamine, imidazole, methylimidazole, piperidine, morpholine, arginine, and hydrazine, wherein pH of the colloidal silica is of 8.5 to 11.0 at 25° C. by containing quaternary ammonium hydroxide. | 07-01-2010 |
Patent application number | Description | Published |
20100178879 | RF POWER MODULE - A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components. | 07-15-2010 |
20100182755 | SEMICONDUCTOR DEVICE - To provide a technique that can improve the reliability of coupling between a package with a PA module and a mounting board in mounting the package over the mounting board. The width of a back conductor pattern is made smaller than the width of each of back terminals. Specifically, for example, the back terminals are arranged in the X direction. The back terminals arranged in parallel to the X direction are coupled together by the back conductor pattern. At this time, the coupling direction (coupling line direction) of the back conductor pattern is the X direction. Taking into consideration the Y direction orthogonal to (intersecting) the X direction, the width of the back conductor pattern in the Y direction is made smaller than the width of each of the back terminals in the Y direction. | 07-22-2010 |