Patent application number | Description | Published |
20080246079 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes: a first semiconductor layer; a second semiconductor layer and a third semiconductor layer provided in an upper portion of the first semiconductor layer and alternately arranged parallel to an upper surface of the first semiconductor layer; a plurality of fourth semiconductor layers provided on the third semiconductor layer; a fifth semiconductor layer selectively formed in an upper surface of each of the fourth semiconductor layers; a control electrode; a gate insulating film; a first main electrode provided on a lower surface of the first semiconductor layer; and a second main electrode provided on the fourth and the fifth semiconductor layers. Sum of the amount of impurities in the second semiconductor layer and the amount of impurities in the third semiconductor layer at an end on the second main electrode side of the second semiconductor layer and the third semiconductor layer is smaller than the sum at a center of the second semiconductor layer and the third semiconductor layer in the direction from the first main electrode to the second main electrode. | 10-09-2008 |
20080290403 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a first semiconductor layer, a second semiconductor layer provided on a major surface of the first semiconductor layer, a third semiconductor layer provided on the major surface and being adjacent to the second semiconductor layer, a termination semiconductor layer provided on the major surface of the first semiconductor layer in a termination region outside the device region, a channel stop layer, and a channel stop electrode. The channel stop layer is provided in contact with the termination semiconductor layer on the major surface of the first semiconductor layer in an outermost peripheral portion outside the termination semiconductor layer and has a higher impurity concentration than the termination semiconductor layer. The channel stop electrode is provided on at least part of a surface of the channel stop layer and projects toward the termination semiconductor layer beyond at least a superficial portion of the channel stop layer. | 11-27-2008 |
20080312435 | Imine Compound - An imine compound represented by the formula: | 12-18-2008 |
20080315297 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device having a drift layer with a pillar structure including first semiconductor layer portions of the first conduction type and second semiconductor layer portions of the second conduction type formed in pillars alternately and periodically on a semiconductor substrate. A device region includes a plurality of arrayed transistors composed of the first semiconductor layer portions and the second semiconductor layer portions. A terminal region is formed at the periphery of the device region without the transistors formed therein. The drift layer in the terminal region has a carrier lifetime lower than ⅕ the carrier lifetime in the drift layer in the device region. | 12-25-2008 |
20080318923 | 1,3-Dihydro-2H-Indole-2-One Compound and Pyrrolidine-2-One Compound Fused With Aromatic Heterocycle - It is intended to provide a drug which is efficacious against pathological conditions relating to arginine-vasopressin V1b receptor. More particularly speaking, it is intended to provide a drug which has a therapeutic or preventive effect on depression, anxiety, Alzheimer's disease, Parkinson's disease, Huntington's chorea, eating disorders, hypertension, digestive diseases, drug addiction, epilepsy, brain infarction, brain ischemia, brain edema, head injury, inflammation, immune diseases, alopecia and so on. As the results of intensive studies, a novel 1,3-dihydro-2H-indol-2-one compound and a pyrrolidin-2-one compound fused with a heteroaromatic ring, which are highly selective antagonists of arginine-vasopressin V1b receptor, have high metabolic stabilities and show favorable brain penetration and high plasma concentrations, are found, thereby achieving the above objective. | 12-25-2008 |
20090101974 | SEMICONDUCTOR DEVICE - A semiconductor device includes an n+ type semiconductor substrate | 04-23-2009 |
20100200936 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type provided on a major surface of the semiconductor layer; a second semiconductor pillar region of a second conductivity type provided adjacent to the first semiconductor pillar region on the major surface of the semiconductor layer, the second semiconductor pillar region forming a periodic arrangement structure substantially parallel to the major surface of the semiconductor layer together with the first semiconductor pillar region; a first main electrode; a first semiconductor region of the second conductivity type; a second semiconductor region of the first conductivity type; a second main electrode; a control electrode; and a high-resistance semiconductor layer provided on the semiconductor layer in an edge termination section surrounding the first semiconductor pillar region and the second semiconductor pillar region. The high-resistance semiconductor layer has a lower dopant concentration than the first semiconductor pillar region. A boundary region is provided between a device central region and the edge termination section. The first semiconductor pillar region and the second semiconductor pillar region adjacent to the high-resistance semiconductor layer in the boundary region have a depth decreasing stepwise toward the edge termination section. | 08-12-2010 |
20100230750 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type formed on the first semiconductor layer and alternately arranged along at least one direction parallel to a surface of the first semiconductor layer; a first main electrode; a fourth semiconductor layer of the second conductivity type selectively formed in a surface of the second semiconductor layer and a surface of the third semiconductor layer; a fifth semiconductor layer of the first conductivity type selectively formed in a surface of the fourth semiconductor layer; a second main electrode; and a control electrode. At least one of the second and the third semiconductor layers has a dopant concentration profile along the one direction, the dopant concentration profile having a local minimum at a position except both ends thereof. | 09-16-2010 |
20100298561 | 2-AMINO-BICYCLO(3.1.0) HEXANE-2, 6-DICARBOXYLIC ESTER DERIVATIVE - A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administration A 2-amino-bicyclo[3.1.0]hexane-2,6-dicarboxylic ester derivative represented by formula [I] | 11-25-2010 |
20120004232 | 2-AMINO-BICYCLO(3.1.0) HEXANE-2, 6-DICARBOXYLIC ESTER DERIVATIVE - A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administration | 01-05-2012 |
20120028982 | 2-AMINO-BICYCLO[3.1.0]HEXANE-2, 6-DICARBOXYLIC ESTER DERIVATIVE - A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administration. A 2-amino-bicyclo[3.1.0]hexane-2,6-dicarboxylic ester derivative represented by formula [I] | 02-02-2012 |
20120101617 | PHOTOCHROMIC LENS MANUFACTURING SYSTEM, PHOTOCHROMIC LENS MANUFACTURING DEVICE, PHOTOCHROMIC LENS MANUFACTURING PROGRAM, RECORDING MEDIUM HAVING PHOTOCHROMIC LENS MANUFACTURING PROGRAM RECORDED THEREUPON, AND PHOTOCHROMIC LENS MANUFACTURING METHOD - An object of the present invention is to make it possible to manufacture a photochromic lens on made-to-order basis within short time, without keeping a stack of the photochromic lens. A photochromic lens manufacturing system has an orderer side computer ( | 04-26-2012 |
20130142948 | PHOTOCHROMIC LENS MANUFACTURING SYSTEM, PHOTOCHROMIC LENS MANUFACTURING DEVICE, PHOTOCHROMIC LENS MANUFACTURING PROGRAM, RECORDING MEDIUM HAVING PHOTOCHROMIC LENS MANUFACTURING PROGRAM RECORDED THEREUPON, AND PHOTOCHROMIC LENS MANUFACTURING METHOD - A photochromic lens manufacturing system has an orderer side computer ( | 06-06-2013 |
20130281465 | PYRAZOLE DERIVATIVE - A compound represented by formula (IA) or a pharmaceutically acceptable salt thereof, which is useful for the treatment or prevention of diseases such sleep disorder, depression, anxiety disorder, panic disorder, schizophrenia, drug dependence, Alzheimer's disease, Parkinson's disease, Huntington's chorea, eating disorder, pain, gastrointestinal diseases, epilepsy, inflammation, immune-related diseases, endocrine-related diseases, and hypertension, and of which the action relies on an orexin (OX) receptor antagonistic activity. | 10-24-2013 |