Patent application number | Description | Published |
20090027586 | Thermoplastic Resin Composition, and Liquid Crystal Display Component Thereof or Information Recording Media Component Thereof - The present invention provides a thermoplastic resin composition having high flowability, has high dimensional stability like being free from deformation after molding, shows excellent rigidity, impact resistance, and heat resistance, and is suitable for thin-wall molded article. Specifically the thermoplastic resin composition is composed of: 100 parts by weight of a resin composition structured by (A) 91 to 99% by weight of a thermoplastic resin having a specified melt viscosity and (B) 1 to 9% by weight of a liquid crystalline polymer; and 0.001 to 2 parts by weight of (C) a specified phosphorus oxo acid monoester or diester, wherein the (B) liquid crystalline polymer is dispersed as particles, and the ratio of the melt viscosity of (A) component to (B) component is within a specified range. The present invention also provides a liquid crystal display component and an information recording media component. | 01-29-2009 |
20100237284 | LIQUID CRYSTALLINE POLYESTER RESIN COMPOSITION - The present invention provides a liquid crystalline polyester resin composition which imparts a good mold-releasability during molding and further is improved in heat resistance. Specifically, with 100 parts by weight of a liquid crystalline polyester resin is added 0.001 to 1 part by weight of a fatty acid ester which is a tetraester of pentaerythritol and a C10 to C32 higher fatty acid and has an acid value ranging from 0.01 to 0.5 and a hydroxyl value ranging from 0.01 to 5. | 09-23-2010 |
20110086968 | PLANAR CONNECTOR - The present invention provides a planar connector having excellent performances including flatness, warp-deformation resistance, and heat resistance, being capable of responding to shape changes in recent planar connectors. Specifically, the planar connector is composed of a composite resin composition comprises (A) a liquid crystalline polymer containing 55% by mole or less of p-hydroxy benzoic acid residue and having a melting point of 330° C. or higher, (B) a plate-like inorganic filler, and (C) a fibrous filler having a weight average fiber length within a range of 250 to 600 μm, the amount of (B) component being 25 to 35% by weight to the total composition, the amount of (C) component being 10 to 25% by weight to the total composition, the sum in total of (B) component and (C) component being 40 to 50% by weight to the total composition, wherein the connector has a lattice structure inside an outer frame, and has an opening inside the lattice area, and wherein the pitch interval of the lattice area is 1.5 mm or less, and the ratio of the thickness of the thickness of the lattice area to the outer frame area is 0.8 or less. | 04-14-2011 |
Patent application number | Description | Published |
20100201834 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged. | 08-12-2010 |
20100230579 | SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device having unit pixels arranged therein is provided, each unit pixel including: a transfer transistor configured to transfer a charge from a photoelectric conversion part to a floating diffusion part; a first reset transistor configured to reset the floating diffusion part; a charge storage capacitor; a charging transistor configured to charge the charge storage capacitor by a current corresponding to a charge in the floating diffusion part; a second reset transistor configured to reset the charge storage capacitor; an amplifying transistor configured to output an electric signal corresponding to a charge in the charge storage capacitor; and a selection transistor configured to selectively cause the amplifying transistor to be in an operation state. | 09-16-2010 |
20100238332 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device according to an embodiment of the present invention includes plural pixels, in which each pixel includes: a transfer transistor that transfers electric charge from a photoelectric conversion section to a floating diffusion section; a reset transistor that resets the floating diffusion section; a amplifying transistor that outputs a signal based on the electric charge held by the floating diffusion section; a selection transistor that is provided at the output side of the amplifying transistor and selects a pixel; and a charge storage capacitor that is provided between the amplifying transistor and the selection transistor and stores the quantity of electric charge on the basis the quantity of the electric charge held by the floating diffusion section through the charge-discharge behavior of electric charge through a current source. | 09-23-2010 |
20110019063 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a pixel including a buried photodiode formed inside a substrate, a buried floating diffusion formed at a depth equal to that of the buried photodiode in the substrate so as to face a bottom of a trench portion formed in the substrate, and a buried gate electrode formed at the bottom of the trench portion in order to transfer a signal charge from the buried photodiode to the buried floating diffusion. | 01-27-2011 |
20120207182 | Encoding System and Encoding Apparatus - An encoding apparatus | 08-16-2012 |
20130070141 | SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device comprising a plurality of unit pixels each comprising (a) a photoelectric conversion element operative to generate a charge in response to incident light, (b) a first storage element in which the charge generated by the photoelectric conversion element is stored and (c) a second storage element in which a charge based on the charge stored in the first storage element is stored, wherein, for each pixel, the second storage element is located at an opposite side of a light receiving surface of the photoelectric conversion element. | 03-21-2013 |
20130100811 | Output Rate Controller and Output Rate Control Method - An output rate controller has a TS packet buffer, a maximum value increase detector, a minimum value decrease detector and an output controller. The TS packet buffer accumulates input packets. The maximum value increase detector detects an increasing trend of the maximum number of packets being accumulated in the TS packet buffer within a fixed time period. The minimum value decrease detector detects a decreasing trend of the minimum number of packets being accumulated in the TS packet buffer within a fixed time period. The output controller sets a higher output rate of packets being accumulated in the TS packet buffer if an increasing trend has been detected by the maximum value increase detector, and sets a lower output rate of packets being accumulated in the TS packet buffer if a decreasing trend has been detected by the minimum value decrease detector. | 04-25-2013 |
Patent application number | Description | Published |
20110241148 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT - A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film. | 10-06-2011 |
20120086094 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT - A solid-state imaging device includes: a substrate; a wiring layer formed on a front side of the substrate in which pixels are formed; a surface electrode pad section formed in the wiring layer; a light-shielding film formed on a rear side of the substrate; a pad section base layer formed in the same layer as the light-shielding film; an on-chip lens layer formed over the light-shielding film and the pad section base layer in a side opposite from the substrate side; a back electrode pad section formed above the on-chip lens layer; a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so as to expose the surface electrode pad section; and a through-electrode layer which is formed in the through-hole and connects the surface electrode pad section and the back electrode pad section. | 04-12-2012 |
20130234276 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT - A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film. | 09-12-2013 |
20130280848 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC EQUIPMENT - A solid-state imaging device including a substrate; a wiring layer formed on a front side of the substrate in which pixels are formed; a surface electrode pad section formed in the wiring layer; a light-shielding film formed on a rear side of the substrate; a pad section base layer formed in the same layer as the light-shielding film; an on-chip lens layer formed over the light-shielding film and the pad section base layer in a side opposite from the substrate side; a back electrode pad section formed above the on-chip lens layer; a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so as to expose the surface electrode pad section; and a through-electrode layer which is formed in the through-hole and connects the surface electrode pad section and the back electrode pad section. | 10-24-2013 |
20140191353 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT - A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film. | 07-10-2014 |