Joon-Suk
Joon-Suk Oh, Seocho-Gu KR
Patent application number | Description | Published |
---|---|---|
20100200945 | Schottky diode and method of fabricating the same - A schottky diode may include a schottky junction including a well formed in a semiconductor substrate and a first electrode contacting the first well. The well may have a first conductivity type. A first ohmic junction may include a first junction region formed in the well and a second electrode contacting the first junction region. The first junction region may have a higher concentration of the first conductivity type than the well. A first device isolation region may be formed in the semiconductor substrate separating the schottky junction and the first ohmic junction. A well guard having a second conductivity type opposite to the first conductivity type may be formed in the well. At least a portion of the well guard may be formed under a portion of the schottky junction. | 08-12-2010 |
Joon-Suk Oh, Seoul KR
Patent application number | Description | Published |
---|---|---|
20080293205 | METHOD OF FORMING METAL SILICIDE LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A method of forming a metal silicide layer includes sequentially forming a metal layer and a first capping layer on a substrate, performing a first heat treatment on the substrate to cause the substrate to react to the metal layer, removing the first, capping layer and an unreacted metal layer, forming a second capping layer on the substrate, and performing a second heat treatment on the substrate to form a metal silicide layer on the substrate. | 11-27-2008 |
20120237692 | EFFECTIVE COATING METHOD FOR PLATE TYPE NANO MATERIALS ON LARGE AREA SUBSTRATE - A method for coating a substrate with a plate type nanomaterial is provided. The method involves preparing a dispersed solution containing the plate type nanomaterial and a surface active agent, dipping the substrate into the dispersed solution, and drying the substrate after withdrawing the substrate from the dispersed solution. Also provided herein are a dipping solution used for coating the substrate, and a method of preparing a dipping solution for coating a substrate with a plate type nanomaterial. | 09-20-2012 |
20130161711 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate including an active region having an isolated shape and a field region. A gate insulation layer is provided on an upper surface of the active region of the substrate. A gate electrode is provided on the gate insulation layer and spaced apart from the boundary of the active region to cover the middle portion of the active region. An impurity region is provided under a surface of the active region that is exposed by the gate electrode. | 06-27-2013 |
Joon-Suk Song, Gyeonggi-Do KR
Patent application number | Description | Published |
---|---|---|
20090218562 | High brightness light emitting diode with a bidrectionally angled substrate - A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer, and the ( | 09-03-2009 |