Patent application number | Description | Published |
20090005636 | Device for Laparoscopic or Thoracoscopic Surgery | 01-01-2009 |
20120226145 | TRANSCUTANEOUS ROBOT-ASSISTED ABLATION-DEVICE INSERTION NAVIGATION SYSTEM - A robotic system for overlapping radiofrequency ablation (RFA) in tumor treatment is disclosed. The robot assisted navigation system is formed of a robotic manipulator and a control system designed to execute preoperatively planned needle trajectories. Preoperative imaging and planning is followed by interoperative robot execution of the ablation treatment plan. The navigation system combines mechanical linkage sensory units with an optical registration system. There is no requirement for bulky hardware installation or computationally demanding software modules. Final position of the first needle placement is confirmed for validity with the plan and then is used as a reference for the subsequent needle insertions and ablations. | 09-06-2012 |
20130085497 | Articulating Ablation And Division Device With Blood Flow Sensing Capability - A laparoscopic liver resection device is described. The device combines the Radiofrequency Ablation (RFA) technology with a cutting mechanism, a blood-flow sensor and a flexible actuation mechanism to simultaneously coagulate and cut the liver tissue and detect the presence of blood flow to confirm avascularity. The present invention eliminates the risk of excess bleeding due to cutting too deep and reduces recovery time and the time spent on re-coagulation of coagulated areas, thereby shortening duration of surgery. Also embodiments prevent excess ablation by stopping ablation activity on the target tissue as soon as insufficient or no blood flow in the target tissue is detected. Thus a closed loop control for a bloodless tissue/organ division method is provided. | 04-04-2013 |
20130196300 | ROBOT ASSISTED SURGICAL TRAINING - A surgical training system and method. The system comprises means for recording reference data representing a reference manipulation of a computer generated model of an object by a master user; means for physically guiding a trainee user based on the recorded reference data during a training manipulation of the model of the object by the trainee user; and means for recording assessment data representing an assessment manipulation of the model of the object by the trainee user without guidance. | 08-01-2013 |
20130224710 | ROBOTIC DEVICE FOR USE IN IMAGE-GUIDED ROBOT ASSISTED SURGICAL TRAINING - A robotic device for use in image-guided robot assisted surgical training, the robotic device comprising a manual interface structure configured to simulate handling of a surgical tool; a translational mechanism for translational motion of the manual interface structure; a rotational mechanism for rotational motion of the manual interface structure; and a spherical mechanism configured to decouple the orientation of the manual interface structure into spatial coordinates, wherein a linkage between the rotational mechanism, the rotational mechanism and the spherical mechanism, and the manual interface structure are disposed on opposing sides of an intersection of a pitch axis and a yaw axis of the spherical mechanism. | 08-29-2013 |
20140188135 | Bio-Absorbable Micro-Clip And Applicator For Minimal Access Wound Closure - The present disclosure includes a bio-absorbable wound closure clip for wound closure without crushing of the tissue being closed. The bio-absorbable wound closure clip can be used in minimal access surgery as well as on tissue, such as mucosal tissue, where tactile feedback is reduced. Representative surgical instruments for applying the bio-absorbable wound closure clip and methods of using the same are also provided herein. | 07-03-2014 |
20150150642 | Device and Method for In-Office Unsedated Tracheoesophageal Puncture (TEP) - Various embodiments of the present disclosure are directed to apparatuses, devices, and procedures for unsedated in-office tracheoesophageal puncture (TEP) using transnasal esophagoscopy (TNE) and a measurement cannula, referred to as a TEP measurement and insertion device (MAID or TEP MAID). In some embodiments, a MAID is configured for use with a mini-tracheostomy kit; in other embodiments, a MAID is configured to be carried and automatically or semi-automatically deployed, for instance, by a handheld mechatronic device or an automated device such as a medical robot that carries an automated tracheoesophageal puncture and voice prosthesis insertion end effector. In accordance with an aspect of the present disclosure, a MAID has a body that carries or includes indicators, indicia, or markings that facilitate or enable substantially direct and/or immediate estimation, identification, or measurement of a tissue extent or thickness corresponding to or across a tracheoesophageal fistula (e.g., a tracheoesophageal dividing wall thickness), and selection and insertion of a voice prosthesis, such as a non-indwelling voice prosthesis from Blom-Singer. In certain embodiments, a MAID includes at least an outer measurement cannula and an inner adaptor cannula configured to fit over or matingly engage with a dilator, such as a short dilator provided in Portex's mini-tracheostomy kit. | 06-04-2015 |
Patent application number | Description | Published |
20080242186 | TOY AIRCRAFT WITH MODULAR POWER SYSTEMS AND WHEELS - Toy aircraft may include an airframe, a modular power system, first and second wheel supports, and first and second wheels. The modular power system may be configured for selective use with and selective removal from the airframe. The power system may include a propulsion unit operable to propel the toy aircraft and a power unit, which may include an energy source configured to supply energy to the propulsion unit. The airframe may include a fuselage, a propulsion unit mount, which may be disposed on the airframe and configured to removably retain the propulsion unit, and a power unit mount, which may be disposed on the fuselage and configured to removably retain the power unit. The first and second wheel supports may extend from the power unit mount toward respective first and second wheel mounts to which the first and second wheels may be rotatably mounted. | 10-02-2008 |
20090075551 | TOY HELICOPTER HAVING A STABILIZING BUMPER - A toy helicopter has a fuselage having a front end a rear end and two lateral sides. A main motor is supported from the fuselage. A main rotor is operably connected to the motor and has at least one rotor blade that rotates about a center axis generally laterally centered with respect to the fuselage. The at least one rotor blade is configured and positioned to provide lift and has a rotational path having a maximum radius. A bumper is fixedly connected to the fuselage, is spaced entirely axially downwardly from the at least one rotor blade and extends radially outwardly from and at least partially around the fuselage. At least a portion of the bumper has a maximum radial dimension from the center axis at least as great as the maximum radius of the rotational path of the at least one rotor blade. | 03-19-2009 |
20110130066 | TOY AIRCRAFT WITH MODULAR POWER SYSTEMS AND WHEELS - Toy aircraft may include an airframe, a modular power system, first and second wheel supports, and first and second wheels. The modular power system may be configured for selective use with and selective removal from the airframe. The power system may include a propulsion unit operable to propel the toy aircraft and a power unit, which may include an energy source configured to supply energy to the propulsion unit. The airframe may include a fuselage, a propulsion unit mount, which may be disposed on the airframe and configured to removably retain the propulsion unit, and a power unit mount, which may be disposed on the fuselage and configured to removably retain the power unit. The first and second wheel supports may extend from the power unit mount toward respective first and second wheel mounts to which the first and second wheels may be rotatably mounted. | 06-02-2011 |
Patent application number | Description | Published |
20130256223 | BIOLOGICAL WASTEWATER TREATMENT AND REUSE UTILIZING SULFUR COMPOUNDS AS ELECTRON CARRIER TO MINIMIZE SLUDGE PRODUCTION - Biological wastewater treatment of wastewater is performed by oxidizing organic carbon with sulfur or a sulfur compound as an electron carrier, and reducing the sulfur or sulfur compound to sulfide. The sulfide is oxidized with nitrate or oxygen. If necessary, ammonia is oxidized to nitrate and then reduced to nitrogen gas. The process is effective for saline waste water facilities, as well as non-saline waste water facilities. | 10-03-2013 |
20130264282 | PROCESS, APPARATUS AND MEMBRANE BIOREACTOR FOR WASTEWATER TREATMENT - Wastewater influent is supplied to an aeration zone having a membrane module. Activated sludge is established in the aeration zone and an oxygen surplus is maintained by controlling a rate of oxygen supplied to the aeration zone. Wastewater influent is mixed with the activated sludge to form a first mixed liquid. A portion of the first mixed liquid is filtered to form a filtrate and unfiltered activated sludge. The unfiltered activated sludge is mixed with the activated sludge in the aeration zone to form the first mixed liquid. A portion of the first mixed liquid is transferred from the aeration zone to an anaerobic zone, and a second portion of first mixed liquid is mixed with activated sludge in the anaerobic zone to form a second mixed liquid. The second mixed liquid is recycled to the aerobic zone. | 10-10-2013 |
20140116939 | METHOD FOR WASTEWATER TREATMENT BY URINE SEPARATION, SEAWATER ADDITION, AND NITRIFICATION AND IN-SEWER DENITRIFICATION - A method for wastewater treatment which comprises (a) separating and/or collecting urine from the wastewater for pretreatment, (b) removing phosphorus from urine using seawater, (c) optionally oxidizing nitrogen from urine, and (d) discharging the phosphorus-removed and/or nitrogen-oxidized urine to a sewer. | 05-01-2014 |
Patent application number | Description | Published |
20120037792 | PHOTO-SENSITIVE COMPOSITE FILM, METHOD OF FABRICATING THE SAME, AND PHOTO-SWITCHED DEVICE COMPRISING THE SAME - A photo-sensitive composite film is disclosed, which includes plural metal nano-particles and a porous anodized aluminum oxide film. The nanoparticles can be hollow or solid with unrestricted shapes of varying diameters and lengths. The plural metal nanoparticles are completely contained in holes and attached to the bottom of the holes of the anodized aluminum oxide film, and the electrical conductivity of the photo-sensitive anodized aluminum oxide film can be changed by light exposure on the metal nanoparticles from surfaces of the anodized aluminum oxide film. The structure of the photo-sensitive anodized aluminum oxide film of the present invention is uncomplicated and the manufacturing steps thereof are simple, and therefore the photo-sensitive anodized aluminum oxide film of the present invention is of great commercial value. Also, a method of manufacturing the above photo-sensitive composite film and a photo-switched device including the same are disclosed. | 02-16-2012 |
20120194813 | SENSOR CHIP FOR BIOMEDICAL AND MICRO-NANO STRUCTURED SUBSTANCES AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a sensor chip for biomedical and micro-nano structured substances and a method for manufacturing the same. The sensor chip includes plural metal nanoparticles and a porous anodized aluminum oxide film. The plural metal nanoparticles are completely contained in holes of the porous anodized aluminum oxide film and located at the bottom of the holes, and an aluminum oxide layer covering the second end of the holes has a thickness of 1 nm to 300 nm. When analytes such as biomedical molecules are provided in contact with the sensor chip, a Raman signal can be detected based on the Raman spectroscopy. The structure of the sensor chip of the present invention is uncomplicated and the manufacturing steps thereof are simple, and therefore the sensor chip of the present invention is of great commercial value. Also, a method of manufacturing the above sensor chip is disclosed. | 08-02-2012 |
20120271114 | Choledochoilluminating Drainage Device - A choledochoilluminating drainage device is disclosed, which includes a drainage catheter and at least one optical fiber disposed in or on there. The optical fiber includes at least one light-emitting structure. While the drainage catheter is put into a duct in an organism, light can be emitted out from the light-emitting structure guided by the optical fiber disposed in or on the drainage catheter, passing through the walls of the drainage catheter and the organism's duct, thereby illuminating the organism's duct and the surrounding region. | 10-25-2012 |
Patent application number | Description | Published |
20110303973 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD - The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned vertically on a first planar silicon layer. Furthermore, a first insulating film is positioned between the first gate electrode and the first planar silicon layer, and a second insulating film is positioned on the top surface of the first gate electrode. In addition, the first gate electrode containing metal is surrounded by the first n+ type silicon layer, the second n+ type silicon layer, the first insulating film and the second insulating film. | 12-15-2011 |
20110303985 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR - The semiconductor device includes: a columnar silicon layer on the planar silicon layer; a first n+ type silicon layer formed in a bottom area of the columnar silicon layer; a second n+ type silicon layer formed in an upper region of the columnar silicon layer; a gate insulating film formed in a perimeter of a channel region between the first and second n+ type silicon layers; a gate electrode formed in a perimeter of the gate insulating film, and having a first metal-silicon compound layer; an insulating film formed between the gate electrode and the planar silicon layer, an insulating film sidewall formed in an upper sidewall of the columnar silicon layer; a second metal-silicon compound layer formed in the planar silicon layer; and an electric contact formed on the second n+ type silicon layer. | 12-15-2011 |
20130252413 | SURROUND GATE CMOS SEMICONDUCTOR DEVICE - The semiconductor device includes: a columnar silicon layer on the planar silicon layer; a first n+ type silicon layer formed in a bottom area of the columnar silicon layer; a second n+ type silicon layer formed in an upper region of the columnar silicon layer; a gate insulating film formed in a perimeter of a channel region between the first and second n+ type silicon layers; a gate electrode formed in a perimeter of the gate insulating film, and having a first metal-silicon compound layer; an insulating film formed between the gate electrode and the planar silicon layer, an insulating film sidewall formed in an upper sidewall of the columnar silicon layer; a second metal-silicon compound layer formed in the planar silicon layer; and an electric contact formed on the second n+ type silicon layer. | 09-26-2013 |
20150357428 | SURROUNDING GATE TRANSISTOR (SGT) STRUCTURE - The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned vertically on a first planar silicon layer. Furthermore, a first insulating film is positioned between the first gate electrode and the first planar silicon layer, and a second insulating film is positioned on the top surface of the first gate electrode. In addition, the first gate electrode containing metal is surrounded by the first n+ type silicon layer, the second n+ type silicon layer, the first insulating film and the second insulating film. | 12-10-2015 |
Patent application number | Description | Published |
20120025806 | METHOD AND APPARATUS FOR WAVE DETECTION - Aspects of the disclosure provide method and apparatus for detecting attributes of an input power supply. The method includes receiving a first signal generated based on a second signal that is predictive. The first signal includes a portion that substantially corresponds to the second signal. Further, the method includes detecting attributes of the portion of the first signal that substantially corresponds to the second signal, and determining attributes of the second signal based on the attributes of the portion of the first signal that substantially corresponds to the second signal. | 02-02-2012 |
20120294051 | High-Voltage Startup Circuit - A system including a power transistor configured to receive an alternating current (AC) line voltage and a control circuit. During a rising portion of a half cycle of the AC line voltage, the control circuit is configured to turn on the power transistor when the AC line voltage reaches a first value and turn off the power transistor when the AC line voltage reaches a second value. The second value is greater than the first value. During a falling portion of the half cycle, the control circuit is configured to turn on the power transistor when the AC line voltage reaches the second value and turn off the power transistor when the AC line voltage reaches the first value. | 11-22-2012 |
20120313692 | SUPER-HIGH-VOLTAGE RESISTOR ON SILICON - An integrated circuit (IC) including a first layer of a conducting material; a second layer of an insulating material, where the second layer has a first side arranged adjacent to the first layer, and a second side; and a substrate arranged adjacent to the second side of the second layer. A first well arranged in the substrate. The first well is adjacent to the second side of the second layer. The substrate and the first well have opposite doping. | 12-13-2012 |
20120326234 | BALLAST RESISTOR FOR SUPER-HIGH-VOLTAGE DEVICES - An integrated circuit (IC) including a well region of the IC having a first doping level and a plurality of semiconductor regions implanted in the well region. Each of the plurality of semiconductor regions has a second doping level. The second doping level is greater than the first doping level. A plurality of polysilicon regions are arranged on the plurality of semiconductor regions. The polysilicon regions are respectively connected to the semiconductor regions. The plurality of semiconductor regions is a drain of a metal-oxide semiconductor field-effect transistor (MOSFET). | 12-27-2012 |
20130043726 | METHOD AND APPARATUS FOR TRIAC APPLICATIONS - Aspects of the disclosure provide a circuit. The circuit includes a control circuit and a return path circuit. The control circuit is configured to operate in response to a first conduction angle of a dimmer coupled to the circuit. The first conduction angle is adjusted to control an output power to a first device. The dimmer has a second conduction angle that is independent of the control of the output power to the first device. The return path circuit is configured to provide a return path to enable providing power to a second device in response to the second conduction angle. | 02-21-2013 |
20130043912 | START-UP CIRCUIT - Aspects of the disclosure provide a circuit. The circuit includes a depletion mode transistor coupled to a power supply and a current path coupled with the depletion mode transistor in series to provide a current to charge a capacitor. The current path has a first resistance during a first stage, such as when the circuit initially receives power, and has a second resistance during a second stage when the capacitor is charged to have a predetermined voltage level. | 02-21-2013 |
20130044524 | PROTECTION CIRCUIT IN TRIAC APPLICATIONS - Aspects of the disclosure provide a circuit. The circuit includes a transistor configured to control energy entering the circuit from a power supply, a capacitor coupled with the transistor to store the energy that enters the circuit, and a protection circuit configured to counteract a voltage change of the transistor that is caused by a step voltage change in the power supply. In an embodiment, the protection circuit operates independent of the stored energy on the capacitor. | 02-21-2013 |
20140268937 | SYSTEM AND METHOD FOR SUPPLYING POWER AT STARTUP - A system including a switch and a control circuit. The switch is configured to receive a first voltage. The control circuit is configured to, during a rising portion of a half cycle of the first voltage, (i) turn on the switch in response to the first voltage reaching a first value, and (ii) turn off the switch in response to the first voltage reaching a second value, where the second value is greater than the first value. The control circuit is further configured to, during a falling portion of the half cycle of the first voltage, (i) turn on the switch in response to the first voltage reaching the second value, and (ii) turn off the switch in response to the first voltage reaching the first value. | 09-18-2014 |
20140334200 | START-UP CIRCUIT - Aspects of the disclosure provide a circuit. The circuit includes a depletion mode transistor coupled to a power supply and a current path coupled with the depletion mode transistor in series to provide a current to charge a capacitor. The current path has a first resistance during a first stage, such as when the circuit initially receives power, and has a second resistance during a second stage when the capacitor is charged to have a predetermined voltage level. | 11-13-2014 |
20150187754 | BALLAST RESISTOR FOR SUPER-HIGH-VOLTAGE DEVICES - An integrated circuit including a well region, a plurality of semiconductor regions implanted in the well region, and a plurality of polysilicon regions arranged on each of the plurality of semiconductor regions. The well region has a first doping level. Each of the plurality of semiconductor regions has a second doping level. The second doping level is greater than the first doping level. The polysilicon regions are respectively connected directly to the plurality of semiconductor regions. | 07-02-2015 |