Patent application number | Description | Published |
20080245779 | LASER PROCESSING MACHINE - A laser processing machine that includes a chuck table adapted to hold a workpiece thereon and laser beam irradiation unit for applying a laser beam to the workpiece held on the chuck table. The laser beam irradiation unit includes: a laser beam oscillation section for emitting a pulse laser beam; a defection section for deflecting the pulse laser beam emitted from the laser beam oscillation section; and a concentrator having an ellipsoidal focusing spot forming section for focusing the pulse laser beam deflected by the deflection unit and forming a focusing spot into an ellipse. | 10-09-2008 |
20080296275 | LASER BEAM MACHINING APPARATUS - A laser beam machining apparatus including a laser beam irradiation unit, the laser beam irradiation unit including: a laser beam oscillator for oscillating a laser beam; a beam splitter by which the laser beam oscillated by the laser beam oscillator is split into a first laser beam and a second laser beam; a rotary half-wave plate disposed between the laser beam oscillator and the beam splitter; a condenser lens disposed in a first optical path for guiding the first laser beam split by the beam splitter; a first reflecting mirror disposed in a second optical path for guiding the second laser beam split by the beam splitter; a first quarter-wave plate disposed between the beam splitter and the first reflecting mirror; a second reflecting mirror disposed in a third optical path for splitting thereinto the second laser beam returned to the beam splitter through the second optical path; a second quarter-wave plate disposed between the beam splitter and the second reflecting mirror; and a cylindrical lens disposed between the beam splitter and the second quarter-wave plate. | 12-04-2008 |
20080299745 | WAFER SEPARATING METHOD - A wafer separating method including a laminated member removing step for partially removing a laminated member of a wafer along streets by applying a laser beam to the wafer along the streets, and a cutting step for cutting a substrate of the wafer along the streets after the laminated member removing step. The laminated member removing step includes a first laser processing step for applying a first laser beam along two parallel lines spaced apart from each other in each street, the first laser beam being capable of passing through the laminated member and having an absorption wavelength to the substrate, thereby heating the substrate to generate two cracks in the laminated member by thermal shock so that the two cracks extend along the two parallel lines in each street; and a second laser processing step for applying a second laser beam to a region between the two cracks in the laminated member, the second laser beam having an energy density higher than that of the first laser beam, thereby removing the region between the two cracks in the laminated member to expose the substrate along each street. | 12-04-2008 |
20090127233 | LASER BEAM MACHINING APPARATUS - A laser beam machining apparatus including a chuck table for holding a wafer, and a laser beam irradiation unit for irradiating the wafer held on the chuck table with a pulsed laser beam. The laser beam machining apparatus further includes a plasma detecting part which includes a plasma receiving part for receiving a plasma generated by irradiation of the work with the laser beam radiated from the laser beam irradiation unit, and a spectrum analyzing part for analyzing the spectrum of the plasma received by the plasma receiving part; and a controller for determining the material of the work on the basis of a spectrum analysis signal from the spectrum analyzing part of the plasma detecting part and for controlling the laser beam irradiation unit. | 05-21-2009 |
20090197351 | LASER PROCESSING METHOD - In a laser beam processing method, when a laser beam is emitted along a second predetermined dividing line to form a second groove intersecting a first groove previously formed, the power output of the laser beam is allowed to be a first power output in a first interval, that is, until the second predetermined dividing line reaches a position immediately before the first groove. In a second interval from the position close to the first groove to the first groove reached by the second predetermined dividing line, the power output of the laser beam is set to a second power output lower than the first power output. Thus, overheat on the periphery of the second interval can be suppressed. | 08-06-2009 |
20090203193 | LASER PROCESSING METHOD - A laser processing method including a first step of forming a first groove and a second step of forming a second groove on the workpiece. In the first step, the laser beam is intermittently applied to the first street except the intersections between the first street and the second street, thereby forming a discontinuous groove as the first groove in such a manner that each intersection is not grooved. In the second step, the laser beam is continuously applied to the second street, thereby forming a continuous groove as the second groove intersecting the first groove in such a manner that each intersection is grooved by the second groove. In the second step, heat generated at a portion immediately before each intersection is passed through the intersection to be dissipated forward, thereby suppressing overheating at this portion. | 08-13-2009 |
20100297830 | LASER PROCESSING METHOD FOR SEMICONDUCTOR WAFER - A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division lines on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm | 11-25-2010 |
20100297831 | LASER PROCESSING METHOD FOR SEMICONDUCTOR WAFER - A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division line on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density per pulse of the pulsed laser beam is set less than or equal to an inflection point where the depth of the laser processed groove steeply increases with an increase in the peak energy density. | 11-25-2010 |
20100297855 | DEVICE PROCESSING METHOD - A device processing method for improving the die strength of a device divided from a semiconductor wafer. The device processing method includes a chamfering step of applying a pulsed laser beam having an absorption wavelength to the device along the periphery of the device to thereby chamfer the periphery of the device, wherein the pulse width of the pulsed laser beam to be applied in the chamfering step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm | 11-25-2010 |
20100317172 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD - A laser processing apparatus including a laser beam applying unit. The laser beam applying unit includes a laser beam generating unit, a focusing unit, and an optical system for guiding a laser beam from the laser beam generating unit to the focusing unit. The optical system includes a first polarization beam splitter for splitting the laser beam generated from the laser beam generating unit into a first laser beam and a second laser beam, a half-wave plate inserted between the laser beam generating unit and the first polarization beam splitter, a first mirror for reflecting the first laser beam transmitted through the first polarization beam splitter to an optical path parallel to the optical path of the second laser beam, a second mirror for reflecting the second laser beam in a direction perpendicular to the direction of incidence of the second laser beam, and a second polarization beam splitter located at a position where the first laser beam reflected by the first mirror intersects the second laser beam reflected by the second mirror. | 12-16-2010 |
20110084050 | LASER PROCESSING APPARATUS - A laser processing apparatus including a laser applying unit. The laser applying unit includes a first laser oscillating unit, a second laser oscillating unit, a first laser branching unit for branching a laser beam oscillated from the first laser oscillating unit into three optical paths, a second laser branching unit for branching a laser beam oscillated from the second laser oscillating unit into three optical paths, three first focusing units for respectively focusing the laser beams through the three optical paths obtained by the first laser branching unit toward a glass substrate, and three second focusing units for respectively focusing the laser beams through the three optical paths obtained by the second laser branching unit. The first focusing units and the second focusing units are alternately arranged in a line in an indexing direction. | 04-14-2011 |
20110186554 | WAFER DIVIDING METHOD USING CO2 LASER - A wafer dividing method for dividing a wafer into individual devices along a plurality of division lines formed on the front side of the wafer, the individual devices being respectively formed in a plurality of regions partitioned by the division lines. The wafer dividing method includes a division inducing region forming step of applying a laser beam having a transmission wavelength to the wafer along the division lines in the condition where the focal point of the laser beam is set inside the wafer, thereby forming a plurality of modified layers as division inducing regions inside the wafer along the division lines; and a dividing step of applying a CO | 08-04-2011 |
20110195535 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of crossing division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate to the intersections of the crossing division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the intersections of the crossing division lines, thereby forming a plurality of modified dots as division start points inside the substrate at the intersections of the crossing division lines; and a crack growing step of applying a CO | 08-11-2011 |
20110195536 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of crossing division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate to the intersections of the crossing division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the intersections of the crossing division lines, thereby forming a plurality of crossing modified layers as division start points inside the substrate at the intersections of the crossing division lines; and a crack growing step of applying a CO | 08-11-2011 |
20110195537 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate along the division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the division lines, thereby forming a plurality of modified layers as division start points inside the substrate along the division lines; and a crack growing step of applying a CO | 08-11-2011 |
20120184084 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device layer (ODL) in an optical device wafer is transferred to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer. The ODL is partitioned by a plurality of crossing streets to define regions where a plurality of optical devices are formed. The transfer substrate is bonded to the front side of the ODL, and the epitaxy substrate is cut along crossing streets into a plurality of blocks. A laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the optical device wafer and the transfer substrate in the condition where the focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate divided into the plurality of blocks is peeled off from the ODL. | 07-19-2012 |
20120234809 | LASER PROCESSING METHOD FOR NONLINEAR CRYSTAL SUBSTRATE - A laser processing method for a nonlinear crystal substrate having a plurality of crossing division lines which includes the step of applying a pulsed laser beam to a work surface of the nonlinear crystal substrate along the division lines to thereby form a plurality of laser processed grooves on the work surface along the division lines. The pulse width of the pulsed laser beam is set to 200 ps or less and the repetition frequency of the pulsed laser beam is set to 50 kHz or less. | 09-20-2012 |
20120292297 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser processing method of applying a pulsed laser beam to a workpiece formed from a transparent member, thereby performing laser processing to the workpiece. The laser processing method includes a first laser processing step of applying a first pulsed laser beam to a subject area of the workpiece to roughen the subject area and a second laser processing step of applying a second pulsed laser beam to the subject area roughened by the application of the first pulsed laser beam immediately after performing the first laser processing step, thereby forming a recess in the subject area. The first laser processing step and the second laser processing step are repeated to thereby form a continuous groove in the subject area. | 11-22-2012 |
20120298636 | LASER PROCESSING APPARATUS - A laser processing apparatus includes a chuck table for holding a workpiece and a laser beam applying unit for applying a laser beam to the workpiece. A laser beam oscillating unit oscillates a laser beam and a focusing unit focuses the laser beam onto the workpiece. A reflecting unit is provided on the optical axis of the focusing unit. A wavelength detecting unit detects the wavelength of the plasma light reflected by the reflecting unit, and a controller determines the material of the workpiece according to a detection signal from the wavelength detecting unit, to control the laser beam applying unit. | 11-29-2012 |
20130017640 | METHOD OF PROCESSING OPTICAL DEVICE WAFERAANM Morikazu; HiroshiAACI Ota-KuAACO JPAAGP Morikazu; Hiroshi Ota-Ku JPAANM Nishino; YokoAACI Ota-kuAACO JPAAGP Nishino; Yoko Ota-ku JP - A method of processing an optical device wafer having an optical device layer including an n-type semiconductor layer and a p-type semiconductor layer stacked over a sapphire substrate, a buffer layer therebetween, allowing peeling of the sapphire substrate. The method includes joining a transfer substrate to the optical device layer, breaking the buffer layer by irradiation with a pulsed laser beam from the sapphire substrate side of the wafer with the transfer substrate joined to the optical device layer, and peeling the sapphire substrate from the optical device wafer with the buffer layer broken, transferring the optical device layer onto the transfer substrate. The pulsed laser beam has a wavelength longer than an absorption edge of the sapphire substrate and shorter than an absorption edge of the buffer layer, and a pulse width set so that a thermal diffusion length will be not more than 200 nm. | 01-17-2013 |
20130048617 | HOLE FORMING METHOD AND LASER PROCESSING APPARATUS - A hole forming method of forming a laser processed hole in a workpiece configured by bonding a first member formed of a first material and a second member formed of a second material. The hole forming method includes a minimum shot number setting step of setting as a minimum value the number of shots of a pulsed laser beam applied to the workpiece at the time the spectral wavelength of plasma has changed from the spectral wavelength inherent in the first material to the spectral wavelength inherent in the second material, and a maximum shot number setting step of setting as a maximum value the number of shots of the pulsed laser beam at the time the spectral wavelength of the plasma has completely changed. In a hole forming step, the application of the pulsed laser beam is stopped in the case that the number of shots has reached the minimum value and the spectral wavelength of the plasma has changed whereas the application of the pulsed laser beam is continued until the number of shots reaches the maximum value in the case that the spectral wavelength of the plasma has not changed even after the number of shots has reached the minimum value. | 02-28-2013 |