Patent application number | Description | Published |
20080297678 | DISPLAY SUBSTRATE, A METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE AND A DISPLAY APPARATUS HAVING THE DISPLAY SUBSTRATE - A display substrate includes a gate line, a data line, a thin film transistor, a pixel electrode, and a light blocking layer. The data line is insulated from the gate line and crosses the gate line. The thin film transistor is connected to the gate line and the data line. The thin film transistor is formed in a pixel. The pixel electrode is formed in the pixel and connected to the thin film transistor. The light blocking layer is formed from a same layer as the data line, wherein the light blocking layer is adjacent to a side of the data line. | 12-04-2008 |
20100277976 | MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS HAVING DIFFERENT PRODUCTS OF SATURATED MAGNETIZATION AND THICKNESS AND RELATED METHODS - A magnetic memory device may include a tunnel barrier, a reference layer on a first side of the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel barrier is between the reference and free layers. The free layer may include a first magnetic layer adjacent the tunnel barrier, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer. More particularly, the nonmagnetic layer may be between the first and second magnetic layers, and the first magnetic layer may be between the tunnel barrier and the second magnetic layer. A product of a saturated magnetization of the first magnetic layer and a thickness of the first magnetic layer may be less than a product of a saturated magnetization of the second magnetic layer and a thickness of the second magnetic layer. Related methods are also discussed. | 11-04-2010 |
20110007559 | NANOWIRE AND MEMORY DEVICE USING IT AS A MEDIUM FOR CURRENT-INDUCED WALL DISPLACEMENT - Disclosed herein are a nanowire and a current-induced domain wall displacement-type memory device using the same. The nanowire has perpendicular magnetic anisotropy and is configured in a manner that when a parameter Q, calculated by a saturation magnetization per unit area, a domain wall thickness and a spin polarizability of a ferromagnet that is a constituent material of the nanowire, has a value of (formula 1 should be inserted here) a domain wall thickness, a width “*′” and a thickness −* of the nanowire satisfy the relationship of (formula 2 should be inserted here) The present invention can be designed such that a current density capable of driving a memory device utilizing the current-driven domain wall displacement has a value of less than (formula 3 should be inserted here), through the determination of the optimal nanowire width and thickness satisfying a value of a critical current density, Jc for the domain wall displacement below a certain value required for commercialization, for a given material in the nanowire with perpendicular anisotropy. According to such a configuration of the present invention, the current density required for the domain wall displacement can be at least 10 times or further lowered than the current density in currently available nano wires. Therefore, the present invention is capable of solving the problems associated with high power consumption and malfunction of the device due to generation of Joule heat and is also capable of achieving low-cost production of memory devices. | 01-13-2011 |
20110101476 | ELECTRONIC DEVICE, MEMORY DEVICE, AND METHOD OF FABRICATING THE SAME - Provided are an electronic device, a memory device, and a method of fabricating the devices for preventing physical distortion of functional elements from generating and improving electric contact properties between the functional elements and electric elements connecting to the functional elements. At least two grooves are formed in a substrate, and a conductive material is filled in the grooves to obtain electric elements having a surface at the same height as that of the substrate. In addition, a functional material layer (functional layer) is formed on an entire upper surface of the substrate and is patterned so as to obtain a functional element having both bottom surfaces contacting the electric elements. | 05-05-2011 |
20140159175 | SPIN TRANSFER TORQUE MAGNETIC MEMORY DEVICE USING MAGNETIC RESONANCE PRECESSION AND THE SPIN FILTERING EFFECT - The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of the device can be achieved and it is possible to lower a critical current density necessary for magnetization reversal thereby reducing the power consumption of the device. Also, a stray field effect occurring from a fixed magnetic layer is reduced such that a written magnetization data is thermally stable. | 06-12-2014 |
20150214274 | HORIZONTAL MAGNETIC MEMORY ELEMENT USING INPLANE CURRENT AND ELECTRIC FIELD - Provided is a magnetic memory device for applying an in-plane current to a conductive wire adjacent to a free magnetic layer having an in-plane magnetic anisotropy to induce a flux reversal of the free magnetic layer and simultaneously applying a voltage to each magnetic tunnel junction cell selectively to reverse magnetization of the free magnetic layer selectively at each specific voltage. The magnetic memory device may implement high density integration by reducing a volume since a spin-hall spin-torque causing a flux reversal is generated at an interface of the conductive wire and the free magnetic layer, ensure thermal stability by enhancing perpendicular magnetic anisotropy of the magnetic layer, and reduce a critical current density by increasing an amount of spin current. In addition, by increasing tunnel magnetic resistance with a thick insulating body, the magnetic memory device may increase a reading rate without badly affecting the critical current density. | 07-30-2015 |
20150236071 | MAGNETIC MEMORY DEVICE USING IN-PLANE CURRENT AND ELECTRIC FIELD - Provided is a magnetic memory device for applying an in-plane current to a conductive wire adjacent to a free magnetic layer having a perpendicular magnetic anisotropy to induce a flux reversal of the free magnetic layer and simultaneously applying a voltage to each magnetic tunnel junction cell selectively to reverse magnetization of the free magnetic layer selectively at each specific voltage. The magnetic memory device may implement high density integration by reducing a volume since a spin-hall spin-torque causing a flux reversal is generated at an interface of the conductive wire and the free magnetic layer, ensure thermal stability by enhancing perpendicular magnetic anisotropy of the magnetic layer, and reduce a critical current density by increasing an amount of spin current. In addition, by increasing tunnel magnetic resistance with a thick insulating body, the magnetic memory device may increase a reading rate without badly affecting the critical current density. | 08-20-2015 |
20150311473 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting device includes: a first substrate; a plurality of electrodes on the first substrate; a pixel definition layer on the plurality of electrodes and including a plurality of openings and respectively exposing the plurality of electrodes; and a spacer on the pixel definition layer, wherein the pixel definition layer includes a first opening and a second opening adjacent to each other along a first direction by an interval for each pixel, and a third opening adjacent to the first opening and the second opening by an interval along a second direction crossing the first direction, and wherein the spacer is at a crossing point of a first imaginary line extending in the first direction and passing between the first opening and the third opening and a second imaginary line extending in the second direction and passing between the first opening and the second opening. | 10-29-2015 |
20150340595 | SPIN TRANSFER TORQUE MAGNETIC MEMORY DEVICE USING MAGNETIC RESONANCE PRECESSION AND THE SPIN FILTERING EFFECT - The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of the device can be achieved and it is possible to lower a critical current density necessary for magnetization reversal thereby reducing the power consumption of the device. Also, a stray field effect occurring from a fixed magnetic layer is reduced such that a written magnetization data is thermally stable. | 11-26-2015 |
Patent application number | Description | Published |
20140023603 | NOVEL COMPOUND HAVING SKIN-WHITENING, ANTI-OXIDIZING AND PPAR ACTIVITIES AND MEDICAL USE THEREFOR - Provided are a novel compound having skin-whitening, anti-oxidizing and PPAR activities and a medical use thereof, and the compound has skin-whitening activities for the suppression of tyrosinase, and accordingly, is useful for use in skin-whitening pharmaceutical composition or cosmetic products; has anti-oxidant activities, and accordingly, is useful for the prevention and treatment of skin-aging; and has PPAR activities, and in particular, PPARα and PPARγ activities, and accordingly, is useful for use in pharmaceutical compositions or health foods which are effective for the prevention and treatment of obesity, metabolic disease, or cardiovascular disease. | 01-23-2014 |
20160102065 | NOVEL COMPOUND HAVING SKIN-WHITENING, ANTI-OXIDIZING AND PPAR ACTIVITIES AND MEDICAL USE THEREOF - Provided are a novel compound having skin-whitening, anti-oxidizing and PPAR activities and a medical use thereof, and the compound has skin-whitening activities for the suppression of tyrosinase, and accordingly, is useful for use in skin-whitening pharmaceutical composition or cosmetic products; has anti-oxidant activities, and accordingly, is useful for the prevention and treatment of skin-aging; and has PPAR activities, and in particular, PPARα and PPARγ activities, and accordingly, is useful for use in pharmaceutical compositions or health foods which are effective for the prevention and treatment of obesity, metabolic disease, or cardiovascular disease. | 04-14-2016 |
Patent application number | Description | Published |
20090078696 | METHOD OF CONTROLLING COOKER - The present invention relates to a oven and a method of controlling the same. In a method of controlling a oven for receiving a variety of operating and setting instructions and displaying various kinds of data related to the instructions, which comprises the steps of (A) displaying, by a control module, any one of menu lists included in a menu list image on a display unit to be relatively larger than the other menu lists; (B) receiving, by an input unit, an instruction to select any one of the menu lists displayed on the display unit at step (A); (C) displaying, by the control module, the menu list selected at step (B) on the display unit to be relatively larger than the other menu lists; (D) receiving, the input unit, an instruction to select any one of menus included in the menu list selected at step (B); (E) displaying, by the control module, a cooking method and image for the menu selected at step (D) on the display unit; (F) receiving, by the input unit, a cooking start instruction; and (G) performing a cooking operation in accordance with the cooking method for the menu selected at step (D) by means of the cooking start instruction received by the input unit at step (F). According to the present invention, there are advantages in that an item to be set can be easily discriminated and accurately selected, a cooking method can be easily discriminated and food can be easily cooked accordingly, and a variety of settings can be made according to users. | 03-26-2009 |
Patent application number | Description | Published |
20080212509 | APPARATUS AND METHOD FOR SELECTING, RELEASING, AND CHANGING MCBCS CHANNEL OF MOBILE STATION IN BROADBAND WIRELESS ACCESS SYSTEM - An apparatus and method for selecting, releasing, and changing a MultiCast and BroadCast Service (MCBCS) of a Mobile Station (MS) in a Broadband Wireless Access (BWA) system are provided. The method includes, upon receiving a request to select a specific channel, transmitting a channel selection request message for selecting the channel; determining whether a DSA request message including a Media Access Control (MAC) layer name tag for the channel is received from an Access Service Network-Gateway (ASN-GW), and, upon receiving the DSA request message, transmitting a DSA response message to the ASN-GW; and receiving a channel selection response message including information indicating a success or failure of the channel selection from an MCBCS server. Accordingly, there is an advantage in that an overall transmission delay is reduced for an MCBCS call process, and a processing capacity can be effectively utilized. | 09-04-2008 |
20110111749 | Method for managing neighbor base station information in mobile communication system and system thereof - There are provided a method for managing neighbor Base Station (BS) information in a mobile communication system, and a system thereof. A femto Access Service Network-Gateway (ASN-GW) controls at least one femto BS, manages scan information that an MS served by a macro BS requires in measuring at least one signal strength by scanning the at least one femto BS, creates the scan information in a format of Downlink Channel Descriptor (DCD) and Uplink Channel Descriptor (UCD) information, and transmits the scan information to the macro BS. The macro BS periodically broadcasts neighbor BS information of the femto BS, which includes the scan information, to MSs in its coverage using a Neighbor Advertisement (NBR-ADV) message. | 05-12-2011 |
20110136491 | PAGING METHOD IN AREA WHERE MACRO ASN AND FEMTO ASN ARE LINKED IN MOBILE NETWORK, AND SYSTEM THEREFOR - A system and method for performing paging in an area where a macro Base Station (BS) and a femto Access Services Network (ASN) are linked in a mobile network are provided. The method includes, during handover of a Mobile Station (MS) between a macro ASN and a femto ASN, a first gateway of a current ASN acquires paging group information of a previous ASN. Upon request for paging from the MS in the current ASN, the first gateway requests a BS of the previous ASN to transmit paging information to the MS based on the paging group information of the previous ASN. By doing so, paging success rate may be improved for an MS in coverage of a macro ASN linked to a femto BS, and the high paging success rate may be guaranteed regardless of whether the handover scheme is a controlled handover scheme or an uncontrolled handover scheme. | 06-09-2011 |
20130170477 | METHOD FOR SECURING HANDOVER DATA INTEGRITY IN MOBILE COMMUNICATION SYSTEM AND SYSTEM THEREOF - A method of performing an uncontrolled handover data integrity of a target Base Station (BS) is provided. The method includes receiving an initial access request message from a Mobile Station (MS) by the target BS, performing a negotiation for establishing a handover data integrity path with a serving BS through a serving Access Service Network-Gateway (ASN-GW) by the target BS, and generating a main data path and a first handover data integrity path with the serving ASN-GW according to a result of the negotiation by the target BS. | 07-04-2013 |
Patent application number | Description | Published |
20100197072 | Method of manufacturing a thin film solar cell - A method of manufacturing a thin film solar cell includes steps of preparing a substrate on which unit cells are defined, forming transparent conducive layers on the substrate and corresponding to the unit cells, respectively, the transparent conductive layers spaced apart from each other with a first separation line therebetween, forming light-absorbing layers on the transparent conductive layers and corresponding to the unit cells, respectively, the light-absorbing layers spaced apart from each other with a second separation line therebetween, forming a third separation line in each of the light-absorbing layers, the third separation line spaced apart from the second separation line, forming a reflection material layer by disposing a silk screen over the third separation line and applying a conductive paste, and forming reflection electrodes corresponding to the unit cells, respectively, by sintering the reflection material layer. | 08-05-2010 |
20100267193 | Method of manufacturing solar cell - A method of manufacturing a solar cell includes forming a transparent conductive layer on a substrate by depositing a transparent conductive oxide under room temperature, crystallizing the transparent conductive layer by irradiating a laser beam to the transparent conductive layer using a first laser; selectively etching the crystallized transparent conductive layer to form embossed and depressed patterns at a surface of the transparent conductive layer; forming transparent electrodes in unit cells by patterning the transparent conductive layer having the embossed and depressed patterns; forming a p-n junction semiconductor layer on the transparent electrodes and patterning the p-n junction semiconductor layer; and forming rear electrodes on the patterned p-n junction semiconductor layer by forming a metallic material layer and patterning the metallic material layer, the rear electrodes corresponding to the unit cells. | 10-21-2010 |