Patent application number | Description | Published |
20080217726 | INTEGRATED CIRCUIT SYSTEM EMPLOYING DIPOLE MULTIPLE EXPOSURE - An integrated circuit system that includes: providing a first mask including a first feature; exposing the first mask to a radiation source to form an image of the first feature on a photoresist material that is larger than a structure to be formed, the photoresist material being formed over a substrate that includes the integrated circuit system; providing a second mask including a second feature; aligning the second mask over the image of the first mask to form an overlap region; and exposing the second mask to the radiation source to form an image of the second feature on the photoresist material that is larger than the structure to be formed. | 09-11-2008 |
20090102069 | INTEGRATED CIRCUIT SYSTEM WITH ASSIST FEATURE - An integrated circuit system comprising: providing a substrate; forming a main feature using a first non-cross-junction assist feature over the substrate; forming the main feature using a second non-cross-junction assist feature, adjacent a location of the first non-cross-junction feature, over the substrate; and forming an integrated circuit having the substrate with the main feature thereover. | 04-23-2009 |
20090181551 | INTEGRATED CIRCUIT SYSTEM EMPLOYING MULTIPLE EXPOSURE DUMMY PATTERNING TECHNOLOGY - An integrated circuit system that includes: providing a substrate coated with a photoresist material; exposing the photoresist material to an energy source through a first mask to form a first substrate feature and a second substrate feature therein; and exposing the photoresist material to the energy source through a second mask to transform the second substrate feature into another one of the first substrate feature therein. | 07-16-2009 |
20090284721 | RETICLE SYSTEM FOR MANUFACTURING INTEGRATED CIRCUIT SYSTEMS - A reticle system that includes: providing a reticle system; and assigning two or more of an image pattern onto the reticle system to form one or more layers of an integrated circuit system by grouping and pairing each of the image pattern onto the reticle system according to a multi-layer reticle grouping/pairing flow. | 11-19-2009 |
20090286167 | CROSS TECHNOLOGY RETICLES - A method of fabricating a device is presented. The method includes forming a mask that includes multiple images. A substrate is patterned using the mask. An image of the multiple images corresponds to a respective patterning process. The substrate is processed further to complete the processing of the substrate to form the desired function of the device. | 11-19-2009 |
20100196805 | MASK AND METHOD TO PATTERN CHROMELESS PHASE LITHOGRAPHY CONTACT HOLE - A method of making a mask is disclosed. The method includes providing a first and a second mask layers and disposing a first phase shift region on the first mask layer. A second phase shift region is disposed on the second mask layer, wherein the first and second phase shift regions are out of phase. A continuous unit cell is formed in the first phase shift region. The unit cell comprises a center section and distinct extension sections. The extension sections are contiguous to and extend outwards from the center section. The distinct extension sections have a same width as the center section. The second phase shift region is adjacent to the unit cell in the first phase shift region. | 08-05-2010 |
20100197140 | ANGLED-WEDGE CHROME-FACE WALL FOR INTENSITY BALANCE OF ALTERNATING PHASE SHIFT MASK - A method for forming a semiconductor device is presented. The method includes providing a substrate having a photoresist thereon and transmitting a light source through a mask having a pattern onto the photoresist. The mask comprises a mask substrate having first, second and third regions, the third region is disposed between the first and second regions. The mask also includes a light reducing layer over the mask substrate having a first opening over the first region and a second opening over the second region. The first and second openings have layer sidewalls. The sidewalls of the light reducing layer are slanted at an angle less than 90 degrees with the plane of a top surface of the mask substrate. The method also includes developing the photoresist to transfer the pattern of the mask to the photoresist. | 08-05-2010 |
20100293516 | MASK SYSTEM EMPLOYING SUBSTANTIALLY CIRCULAR OPTICAL PROXIMITY CORRECTION TARGET AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of a mask system includes: providing design data; generating a substantially circular optical proximity correction target from the design data; biasing a segment of the substantially circular optical proximity correction target; and generating mask data based on the shape produced by biasing the segment of the substantially circular optical proximity correction target. | 11-18-2010 |
20110157567 | LIQUID IMMERSION SCANNING EXPOSURE SYSTEM USING AN IMMERSION LIQUID CONFINED WITHIN A LENS HOOD - A liquid immersion scanning exposure system utilizes an immersion liquid confined within a watertight lens hood having a base portion formed from a solid optical element. During operation, a bottom portion of a lens assembly is disposed within the immersion liquid and the solid optical element is placed upon a photoresist material or layer (to be patterned). The lens assembly moves laterally through the immersion liquid parallel to the photoresist material. Because the solid optical element separates the immersion liquid from the photoresist material and does not move relative to the photoresist material, the photoresist material does not contact with the immersion liquid and the solid optical element and is not susceptible to damage or scratching by the solid optical element. | 06-30-2011 |