Ho-Jeong
Ho Jeong Chae, Daejun KR
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20150258524 | REACTION DEVICE FOR MIXING AND MANUFACTURING METHOD USING THE REACTION DEVICE - A reaction apparatus includes first and second reaction material accommodation parts, each of which accommodates a solid, gaseous, or liquid reaction material. A feed pump feeds the reaction material to one or each of the first and second accommodation parts. A reactor mixes the reaction material fed from the feed pump. The reactor is configured to have a cylinder that has a reaction chamber which accommodates the reaction material therein. The reactor has injection ports on which one side of each of the upper portion and lower portion thereof are connected to the first and second reaction material accommodation parts, respectively. A stirring shaft is disposed to be rotatable in the cylinder and stirs the reaction material supplied from the first and second reaction material accommodation parts. A stirring motor provides torque for the stirring shaft. | 09-17-2015 |
Ho Jeong Kim, San Jose, CA US
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20150064880 | POST ETCH TREATMENT TECHNOLOGY FOR ENHANCING PLASMA-ETCHED SILICON SURFACE STABILITY IN AMBIENT - Methods for performing post etch treatments on silicon surfaces etched using halogen chemistry are provided. The methods may be performed in-situ a chamber in which the silicon surfaces where etch, ex-situ the chamber, or in a hybrid process that combines both in-situ and ex-situ post etch treatment processes. In one embodiment the post etch treatment process includes exposing a substrate having a silicon surface etched using halogen chemistry to a gas mixture comprising C | 03-05-2015 |
20150064919 | ASPECT RATIO DEPENDENT ETCH (ARDE) LAG REDUCTION PROCESS BY SELECTIVE OXIDATION WITH INERT GAS SPUTTERING - Embodiments of methods for etching a substrate include exposing the substrate to a first plasma formed from an inert gas; exposing the substrate to a second plasma formed from an oxygen-containing gas to form an oxide layer on a bottom and sides of a low aspect ratio feature and a high aspect ratio feature, wherein the oxide layer on the bottom of the low aspect ratio feature is thicker than on the bottom of the high aspect ratio feature; etching the oxide layer from the bottom of the low and high aspect ratio features with a third plasma to expose the bottom of the high aspect ratio feature while the bottom of the low aspect ratio feature remains covered; and exposing the substrate to a fourth plasma formed from a halogen-containing gas to etch the bottom of the low aspect ratio feature and the high aspect ratio feature. | 03-05-2015 |
20150099345 | METHOD FOR FORMING FEATURES IN A SILICON CONTAINING LAYER - Embodiments of methods for forming features in a silicon containing layer of a substrate disposed on a substrate support are provided herein. In some embodiments, a method for forming features in a silicon containing layer of a substrate disposed on a substrate support in a processing volume of a process chamber includes: exposing the substrate to a first plasma formed from a first process gas while providing a bias power to the substrate support, wherein the first process gas comprises one or more of a chlorine-containing gas or a bromine containing gas; and exposing the substrate to a second plasma formed from a second process gas while no bias power is provided to the substrate support, wherein the second process gas comprises one or more of an oxygen-containing gas or nitrogen gas, and wherein a source power provided to form the first plasma and the second plasma is continuously provided. | 04-09-2015 |
Ho Jeong Kim, Daegu KR
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20150356267 | REDUCED MODELING METHOD FOR NEURONS - Disclosed herein is modeling method which is enabled to analyses neurons in order to reduce real neurons physiologically properly using the relationship between asymmetry in signal propagation between a soma and dendrites and dendritic excitability. The modeling method for neurons include determining voltage attenuation factors which represent properties of signal propagation between dendrites and a soma and is represented as functions of distance from the soma; and determining a plurality of passive parameter at a pre-determined path length using system parameters defined from the anatomical model comprising the voltage attenuation factors at the pre-determined path length. | 12-10-2015 |
20160055276 | Modeling System and Method for Muscle Cell Activation - Disclosed herein is modeling system and method of a muscle activation that is both biophysically-plausible and practically-robust over a wide range of physiological input conditions such as excitation frequency and muscle length. The modeling system comprises: a first module transforming electrical signals from motoneurons to concentration of Ca | 02-25-2016 |
Ho-Jeong Choi, Yongin-Si KR
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20090009204 | Test socket - A test socket in accordance with one aspect of the present invention includes a socket body, a thermoelectric element and a heat transfer member. The socket body receives an object. The thermoelectric element is arranged in the socket body to emit heat and absorb heat in accordance with current directions. The heat transfer member is arranged between the object and the thermoelectric element to transfer a heat generated from the object to the thermoelectric element. Thus, the object may be directly provided with a desired test temperature using the thermoelectric element so that the desired test temperature may be set rapidly and accurately. Further, the heat transfer member interposed between the object and the thermoelectric element may quickly dissipate the heat in the object. | 01-08-2009 |
20090028571 | ELECTRICAL SIGNAL TRANSMISSION MODULE, METHOD OF TRANSMITTING ELECTRIC SIGNALS AND ELECTRICAL INSPECTION APPARATUS HAVING THE SAME - An electrical signal transmission module includes a plurality of optical signal lines and a plurality of electrical signal lines. The plurality of optical signal lines converting a first externally input electrical signal into an optical signal, transmitting the optical signal, converting the optical signal back into the first electrical signal, and outputting the first electrical signal. The plurality of electrical signal lines transmitting a second externally input electrical signal and outputting the second electrical signal. | 01-29-2009 |
20100176796 | Apparatus for testing electrical characteristics - An apparatus for testing electrical characteristics includes a probe configured to contact a test object, a DC signal transmission line configured to transmit a DC signal to the probe, a frequency signal transmission line configured to transmit a frequency signal to the probe, and a line selection unit configured to selectively connect only one of the frequency signal transmission line and the DC signal transmission line to the probe at a time in accordance with a selected test. | 07-15-2010 |
Ho-Jeong Kwak, Suwon-Si KR
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20160061583 | APPARATUS FOR MEASURING THICKNESS OF THIN FILM, SYSTEM INCLUDING THE APPARATUS, AND METHOD FOR MEASURING THICKNESS OF THIN FILM - An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value. | 03-03-2016 |
Ho-Jeong Lee, Gyeonggi-Do KR
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20100196370 | FUSION PROTEIN OF IMMUNOGLOBULIN FC AND HUMAN APOLIPOPROTEIN(A) KRINGLE FRAGMENT - The present invention relates to an LK8-Fc fusion protein, which has increased angiogenesis inhibitory activity and in vivo stability. More specifically, relates to an LK8-Fc fusion protein in which an LK8 protein having angiogenesis inhibitory activity is fused with the Fc region of human immunoglobulin IgG1, as well as a composition for treating cancer, which contains the fusion protein. The LK8-Fc fusion protein has not only angiogenesis inhibitory activity leading to anticancer and metastasis inhibitory activities, but also a very long in vivo half-life, and thus can be used as a more efficient and economic cancer therapeutic agent or cancer inhibitor. | 08-05-2010 |
Ho-Jeong Moon, Daejeon KR
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20150103974 | X-RAY SYSTEM, SEMICONDUCTOR PACKAGE, AND TRAY HAVING X-RAY ABSORPTION FILTER - An X-ray source is disposed and a detector is disposed adjacent to the X-ray source. A test specimen holder is disposed between the X-ray source and the detector. A filter is disposed between the X-ray source and the test specimen holder. The filter has a plate-shaped semiconductor, a granular semiconductor, or a combination thereof. | 04-16-2015 |
Ho-Jeong Moon, Hwasung-City KR
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20100177165 | METHOD OF CONDUCTING PRECONDITIONED RELIABILITY TEST OF SEMICONDUCTOR PACKAGE USING CONVECTION AND 3-D IMAGING - A precondition reliability test of a semiconductor package, to determine a propensity of the package to delaminate, includes a baking test of drying the package, a moisture soaking test of moisturizing the dried package, a reflow test of heat-treating the moisturized package using hot air convection, and a three-dimensional imaging of the package to acquire a 3-D image of a surface of the package. The three-dimensional imaging is preferably carried out using a Moire interferometry technique during the course of the reflow test. Therefore, the delamination of the package can be observed in real time so that data on the start and rapid development of the delamination can be produced. The method also allows data which can be ordered as a Weibull Plot to be produced, thereby enabling a quantitative analysis of the reliability test results. | 07-15-2010 |
Ho-Jeong Moon, Cheonan-Si KR
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20090146300 | Semiconductor packages and electronic products employing the same - Example embodiments of a semiconductor package are provided. In accordance with an example embodiment, a semiconductor package may include an external terminal connected to a concave surface of a bottom pad, wherein the bottom pad is recessed into a substrate. In accordance with another example embodiment, a semiconductor package may include at least one external terminal, a flexible substrate having a first surface with a plurality of convex portions and a second surface opposite the first surface having a plurality of concave portions, wherein the at least one terminal is recessed into the substrate and at least one of the concave portions surrounds a portion of the at least one external terminal. | 06-11-2009 |
20100206062 | ADHESION TEST METHOD USING ELASTIC PLATE - Provided is a method for testing adhesion. The method includes forming thin films on a substrate; attaching an elastic plate to the substrate, wherein the elastic plate has a larger elastic coefficient than the substrate; and performing an adhesion test on the thin films using an adhesion test apparatus. | 08-19-2010 |
Ho-Jeong Yu, Incheon KR
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20110290184 | POLY SILICON DEPOSITION DEVICE - Provided is a poly silicon deposition device, which includes an electrode part, a silicon core rod part, a silicon core rod heating part, a gas supply pipe, and a gas injection part. The electrode part includes a first electrode and a second electrode which are disposed in a bottom of a reactor including a gas inlet for introducing source gas, a gas outlet for discharging gas, and a heating material inlet for introducing a heating material, and are spaced a predetermined distance from each other. The silicon core rod part receives electric current from the first electrode and transmits the electric current to the second electrode to generate heat. The silicon core rod heating part is spaced a predetermined distance from the silicon core rod part and surrounds the silicon core rod part and includes a heater receiving the heating material introduced through the heating material inlet of the reactor. The gas supply pipe is disposed between the heater and the silicon core rod part to supply the source gas introduced through the gas inlet of the reactor, to the silicon core rod part. The gas injection part includes a plurality of nozzles disposed in a surface of the gas supply pipe to discharge the source gas to the silicon core rod part. | 12-01-2011 |