Patent application number | Description | Published |
20080245553 | INTERCONNECTION, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE - An interconnection includes a bundle of conductive members, each of the conductive members being made of carbon nanotube having an end connected to a first conductive film, and another end connected to a second conductive film separated from the first conductive film; and carbon particles each having a diamond crystal structure, dispersed between the conductive members. | 10-09-2008 |
20110050080 | ELECTRON EMISSION ELEMENT - According to the embodiment, an electron emission element includes a conductive substrate, a first diamond layer of a first conductivity type formed on the conductive substrate, and a second diamond layer of the first conductivity type formed on the first diamond layer. Thereby, it becomes possible to provide the electron emission element having a high electron emission amount and a high current density even in a low electric field at low temperature and the electron emission apparatus using this electron emission element. | 03-03-2011 |
20110057322 | CARBON NANOTUBE INTERCONNECT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a carbon nanotube interconnect includes a first interconnection layer, an interlayer dielectric film, a second interconnection layer, a contact hole, a plurality of carbon nanotubes and a film. The interlayer dielectric film is formed on the first interconnection layer. The second interconnection layer is formed on the interlayer dielectric film. The contact hole is formed in the interlayer dielectric film between the first interconnection layer and the second interconnection layer. The carbon nanotubes are formed in the contact hole. The carbon nanotubes have a first end connected to the first interconnection layer and a second end connected to the second interconnection layer. The film is formed between the interlayer dielectric film and the second interconnection layer. The film has a portion filled between the second ends of the carbon nanotubes. | 03-10-2011 |
20110233779 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes an interlayer insulation film provided on a substrate including a Cu wiring, a via hole formed in the interlayer insulation film on the Cu wiring, a first metal film selectively formed on the Cu wiring in the via hole, functioning as a barrier to the Cu wiring, and functioning as a promoter of carbon nanotube growth, a second metal film formed at least on the first metal film in the via hole, and functioning as a catalyst of the carbon nanotube growth, and carbon nanotubes buried in the via hole in which the first metal film and the second metal film are formed. | 09-29-2011 |
20120228614 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate. | 09-13-2012 |
20130217226 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer. | 08-22-2013 |
20140284802 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a metal interconnect and a graphene interconnect which are stacked to one another. | 09-25-2014 |
Patent application number | Description | Published |
20100072054 | CARBON NANOTUBE MANUFACTURING APPARATUS, CARBON NANOTUBE MANUFACTURING METHOD, AND RADICAL PRODUCING APPARATUS - A carbon nanotube manufacturing apparatus includes a plasma generating unit that generates plasma including ions, radicals, and electrons, from gas; a carbon nanotube manufacturing unit that manufactures carbon nanotubes from the radicals; a shielding electrode unit that is provided between the plasma generating unit and the carbon nanotube manufacturing unit and prevents the ions and the electrons from entering the carbon nanotube manufacturing unit; and a bias applying unit that applies a voltage to the shielding electrode unit, wherein the shielding electrode unit includes at least two first shielding electrodes that are arranged one above another, each of the first shielding electrodes having at least one opening. | 03-25-2010 |
20100209704 | CARBON NANOTUBE GROWING PROCESS, AND CARBON NANOTUBE BUNDLE FORMED SUBSTRATE - In the growth of carbon nanotubes, the aggregation of catalytic fine particles therefor is a problem. In order to realize the growth of carbon nanotubes into a high density, the carbon nanotube growing process includes a first plasma treatment step of treating a surface having catalytic fine particles with a plasma species generated from a gas which contains at least hydrogen or a rare gas without carbon element, a second plasma treatment step of forming a carbon layer on the surface of the catalytic fine particles by a plasma generated from a gas which contains at least a hydrocarbon after the first plasma treatment step, and a carbon nanotube growing step of growing carbon nanotubes by use of a plasma generated from a gas which contains at least a hydrocarbon after the second plasma treatment step. | 08-19-2010 |
20110147177 | STRUCTURE, ELECTRONIC DEVICE, AND METHOD FOR FABRICATING A STRUCTURE - A structure includes a conductive film ( | 06-23-2011 |
20130075757 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of <011> ±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above. | 03-28-2013 |
20130075929 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film. | 03-28-2013 |
20140117548 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles. | 05-01-2014 |
20140145210 | SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer; a third diamond semiconductor layer of a second conductivity type formed on the second diamond semiconductor layer and having a higher dopant concentration than the second diamond semiconductor layer; a first electrode electrically connected to the first diamond semiconductor layer; and a second electrode electrically connected to the third diamond semiconductor layer. | 05-29-2014 |
20140284798 | GRAPHENE WIRING AND METHOD OF MANUFACTURING THE SAME - A graphene wiring has a substrate a catalyst layer on the substrate a first graphene sheet layer on the catalyst layer and a second graphene sheet layer on the first graphene layer. The second graphene layer comprises multilayer graphene sheets. The multilayer graphene sheets are intercalated with an atomic or molecular species. | 09-25-2014 |
20140284799 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a substrate a lower layer wiring on the substrate, an interlayer dielectric on the lower layer wiring having a contact hole, a catalyst metal layer at the bottom of the contact hole having catalyst metal particles, multi-walled carbon nanotubes on the catalyst metal layer passing through the contact hole, and an upper layer wiring on the multi-walled carbon nanotubes. The multi-walled carbon nanotubes are intercalated with an atomic or molecular species. | 09-25-2014 |
20140284800 | GRAPHENE WIRING - A graphene wiring has a substrate, a catalyst layer on the substrate, a graphene layer on the catalyst layer, and a dopant layer on a side surface of the graphene layer. An atomic or molecular species is intercalated in the graphene layer or disposed on the graphene layer. | 09-25-2014 |
Patent application number | Description | Published |
20090110938 | Resin composition, prepreg and laminate using the same - A cyanate ester resin composition for a printed wiring board material containing a cyanate ester resin component A comprising a cyanate ester compound represented by the formula (1) and/or an oligomer thereof, and at least one component B selected from the group consisting of an epoxy resin and a maleimide compound, which resin composition is improved in heat resistance and heat resistance after moisture absorption, is excellent in mechanical properties such as elastic modulus and has flame retardancy without a halogen compound, and | 04-30-2009 |
20130023640 | CYANATE ESTER COMPOUNDS AND CURED PRODUCTS THEREOF - There is provided a novel cyanate ester compound that can provide a cured product possessing excellent heat resistance. The cyanate ester compound is represented by general formula (1): | 01-24-2013 |
20130281640 | CYANATE ESTER COMPOUND, CURABLE RESIN COMPOSITION CONTAINING CYANATE ESTER COMPOUND, AND CURED PRODUCT THEREOF - There is provided a novel dicyanatophenyl-based difunctional cyanate ester which is in a liquid form at ordinary temperature and can obtain a cured product having an excellent low thermal expansion rate. There is disclosed a cyanate ester compound represented by the following formula (I): | 10-24-2013 |
20140242394 | CURABLE RESIN COMPOSITION AND METHOD FOR MANUFACTURING CURED PRODUCT USING THE SAME - A curable resin composition which is in a liquid form at ordinary temperature and provides a cured product having excellent heat resistance and a low thermal expansion rate is provided. The curable resin composition according to the present invention comprises: a cyanate ester compound (A) represented by the following formula (I); and a curing accelerator (B): | 08-28-2014 |
20140308530 | NOVEL CYANATE ESTER COMPOUND AND METHOD FOR PRODUCING THE SAME, AND CURABLE RESIN COMPOSITION COMPRISING THE COMPOUND, AND CURED PRODUCT THEREOF COMPOSITION - To provide a novel cyanate ester compound that can realize a cured product having low dielectric constant and dielectric loss tangent, and excellent flame retardancy and heat resistance, and moreover has relatively low viscosity, excellent solvent solubility, and also excellent handling properties, and a method for producing the cyanate ester compound, and a curable resin composition and the like using the cyanate ester compound. A phenol-modified xylene formaldehyde resin is cyanated. | 10-16-2014 |