Patent application number | Description | Published |
20090139656 | Substrate processing apparatus - The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow. The discharge guide portion is inclined upward, opposite to the central portion in the width direction. The projecting portion includes an inner end portion located nearer to the central portion in the width direction, as compared with the main body and discharge guide portion. | 06-04-2009 |
20090179007 | LIQUID TREATMENT METHOD AND STORAGE SYSTEM - A plurality of process liquid supply nozzles | 07-16-2009 |
20100330283 | LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD, AND STORAGE MEDIUM - A liquid processing apparatus processes an object to be processed W including a body part W | 12-30-2010 |
20110011425 | SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, RECORDING MEDIUM AND SOFTWARE - A substrate processing system | 01-20-2011 |
20110099838 | FLUID HEATER, MANUFACTURING METHOD THEREOF, SUBSTRATE PROCESSING APPARATUS INCLUDING FLUID HEATER, AND SUBSTRATE PROCESSING METHOD - A fluid heater | 05-05-2011 |
20110290280 | SUBSTRATE PROCESSING METHOD AND NON-TRANSITORY STORAGE MEDIUM FOR CARRYING OUT SUCH METHOD - Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture. | 12-01-2011 |
20120247516 | SUPERCRITICAL DRYING METHOD AND APPARATUS FOR SEMICONDUCTOR SUBSTRATES - According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing. | 10-04-2012 |
20120304485 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM - A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container. | 12-06-2012 |
20130019905 | SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE AND SUPERCRITICAL DRYING APPARATUS - According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber. | 01-24-2013 |
20130302525 | PLATING APPARATUS, PLATING METHOD AND STORAGE MEDIUM - A plating apparatus includes a substrate holding/rotating device that holds/rotates a substrate; and a plating liquid supplying device that supplies a plating liquid onto the substrate. The plating liquid supplying device includes a supply tank that stores the plating liquid; a discharge nozzle that discharges the plating liquid onto the substrate; and a plating liquid supplying line through which the plating liquid of the supply tank is supplied into the discharge nozzle. Further, a first heating device is provided at either one of the supply tank and the plating liquid supplying line of the plating liquid supplying device, and heats the plating liquid to a first temperature. Furthermore, a second heating device is provided at the plating liquid supplying line between the first heating device and the discharge nozzle, and heats the plating liquid to a second temperature equal to or higher than the first temperature. | 11-14-2013 |
20140020721 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND STORAGE MEDIUM - A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container. Thereafter, a fluid in the state of a high-pressure fluid or a gas is discharged from the processing container to obtain the substrate in the dried state. | 01-23-2014 |
20140250714 | SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE AND SUPERCRITICAL DRYING APPARATUS - According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber. | 09-11-2014 |
Patent application number | Description | Published |
20100192992 | SUBSTRATE CARRYING APPARATUS AND SUBSTRATE PROCESSING SYSTEM - Disclosed is a substrate carrying apparatus having a simple configuration capable of inhibiting the occurrence of pattern collapse. A carrying tray of the disclosed substrate carrying apparatus includes a bottom plate for supporting the substrate and a circumferential side wall being provided around the bottom plate. An opening is formed in the bottom plate. An elevating member, to and from which the substrate is to be transferred, passes through the opening. A space is temporarily formed in a carrying tray. The elevating member within the opening passes to the outside of the carrying tray through the space. When the substrate is carried, the liquid is reservoired within the carrying tray, and the substrate is carried while the liquid remained on the upper surface of the substrate. | 08-05-2010 |
20110000507 | SUPERCRITICAL PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM AND SUPERCRITICAL PROCESSING METHOD - Disclosed is a supercritical processing apparatus which can suppress the occurrence of pattern collapse, improve the throughput, and prolong a maintenance interval. In the disclosed supercritical processing apparatus to remove a liquid remained on a substrate by a super-critical state processing fluid, a heating unit heats the processing fluid to place the processing fluid into a processing receptacle in a supercritical state, and a cooling mechanism forcibly cools an area capable of transferring the heat to the substrate from the heating unit in order to suppress the liquid from being evaporated from the substrate until the substrate is disposed on a seating unit. | 01-06-2011 |
20110000512 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Provided are a substrate processing apparatus and a substrate processing method capable of processing of a substrate using a supercritical fluid without exposing the pattern formed on the substrate to an atmospheric environment. The substrate processing apparatus includes a cleaning bath configured to accommodate a substrate and clean the substrate by flowing a cleaning solution, and a processing vessel configured to accommodate the cleaning bath and process the substrate with a supercritical fluid. | 01-06-2011 |
20120132230 | Substrate Processing Apparatus, Substrate Processing Method, and Storage Medium - Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members. | 05-31-2012 |
20120164339 | Substrate Liquid Processing Apparatus, Substrate Liquid Processing Method and Computer Readable Recording Medium Having Substrate Liquid Processing Program - Disclosed are a substrate liquid processing apparatus and a substrate liquid processing method that performs a water-repelling process for a substrate with a water-repellent liquid, and a computer readable recording medium having a substrate liquid processing program. A first diluted water-repellent liquid is generated by mixing a first diluting liquid capable of diluting the water-repellent liquid without hydrolysis and the water-repellent liquid in a mixing tank, and a water-repelling process is performed for a substrate with the first diluted water-repellent liquid. A second diluting liquid capable of diluting the water-repellent liquid is supplied to a middle portion of a first supply path supplying the first diluted water-repellent liquid from the mixing tank. A second diluted water-repellent liquid is generated by diluting the first diluted water-repellent liquid with the second diluting liquid, and the water-repelling process is performed for the substrate with the second diluted water-repellent liquid. | 06-28-2012 |
20140302242 | PLATING APPARATUS, PLATING METHOD AND STORAGE MEDIUM HAVING PLATING PROGRAM STORED THEREON - A plating apparatus | 10-09-2014 |
Patent application number | Description | Published |
20090101186 | Substrate Processing Apparatus and Substrate Processing Method - Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture. | 04-23-2009 |
20090253258 | SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD - A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism. | 10-08-2009 |
20100075027 | CAP METAL FORMING METHOD - A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate. | 03-25-2010 |
20110214694 | SUPERCRITICAL PROCESSING APPARATUS AND SUPERCRITICAL PROCESSING METHOD - Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon. | 09-08-2011 |
20110265718 | SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD - A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism. | 11-03-2011 |
20130333726 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, FLUID SUPPLYING METHOD AND STORAGE MEDIUM - The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path. | 12-19-2013 |
20140145390 | HIGH-PRESSURE CONTAINER, SUBSTRATE PROCESSING APPARATUS, AND METHOD FOR MANUFACTURING HIGH-PRESSURE CONTAINER - In the present disclosure, the high-pressure chamber includes a chamber main body including a flat rectangular parallelepiped block of a metal which is formed with a flat cavity that serves as a substrate processing space in which a processing using a high-pressure fluid is performed on a substrate, and the substrate processing space being formed by machining the block from one of faces of the block other than the widest face towards another face opposing thereto. In a case where the cavity is constituted as a through hole, the though hole is provided with a cover configured to open or close the cavity on one side of the through hole, and a second block configured to air-tightly seal the cavity on the other side. | 05-29-2014 |
20140311530 | SUBSTRATE PROCESSING METHOD AND TEMPLATE - A substrate processing method of performing a predetermined processing by supplying a processing liquid to a processing region on a surface of a substrate, includes: supplying an alignment liquid to an alignment region on the surface of the substrate formed at a position different from that of the processing region; aligning a template disposed facing the substrate and including a processing liquid passage configured to pass the processing liquid and an alignment liquid passage configured to pass the alignment liquid, with respect to the substrate with the alignment liquid supplied to the alignment region such that the processing liquid passage is positioned above the processing region; and performing the predetermined processing on the substrate by supplying the processing liquid to the processing region through the processing liquid passage. | 10-23-2014 |