Patent application number | Description | Published |
20080245306 | Vaporizer and semiconductor processing system - A vaporizer for generating a process gas from a liquid material includes a heat-exchange lower block having a hollow internal space and disposed below the spray port of an injector inside the container. A run-up space for the atomized liquid material is defined between the spray port and the heat-exchange lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the heat-exchange lower block. An internal heater is disposed in the internal space of the heat-exchange lower block and includes a carbon wire formed of woven bundles of carbon fibers and sealed in a ceramic envelope. The internal heater is configured to heat the atomized liquid material flowing through the annular space to generate the process gas. | 10-09-2008 |
20090324826 | Film Deposition Apparatus, Film Deposition Method, and Computer Readable Storage Medium - A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber. | 12-31-2009 |
20090324828 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber. | 12-31-2009 |
20100050942 | FILM DEPOSITION APPARATUS AND SUBSTRATE PROCESS APPARATUS - A disclosed film deposition apparatus has a separation gas supplying nozzle between reaction gas nozzles arranged away from each other in a rotation direction of a turntable on which a substrate is placed, and a ceiling member providing a lower ceiling surface on both sides of the separation gas supplying nozzle. In this film deposition apparatus, the separation gas supplying nozzle and the reaction gas nozzles are removably arranged along a circumferential direction of a chamber, and the ceiling member is removably attached on a ceiling plate of the chamber. | 03-04-2010 |
20100050943 | FILM DEPOSITION APPARATUS AND SUBSTRATE PROCESSING APPARATUS - A film deposition apparatus includes: a turntable; a first reaction gas supply part and a second reaction gas supply part extending from a circumferential edge toward a rotation center of the turntable; and a first separation gas supply part provided between the first and second reaction gas supply parts. A first space contains the first reaction gas supply part and has a first height. A second space contains the second reaction gas supply part and has a second height. A third space contains a first separation gas supply part and has a height lower than the first and second heights. A motor provided under the rotation center of the turntable rotates the turntable. A rotation shaft of the turntable and a drive shaft of the motor are coupled without generation of slip. | 03-04-2010 |
20100050944 | FILM DEPOSITION APPARATUS, SUBSTRATE PROCESS APPARATUS, AND TURNTABLE - A film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber is disclosed. This film deposition apparatus includes a turntable rotatably provided in the chamber, a substrate receiving portion that is provided in the turntable and the substrate is placed in, a first reaction gas supplying portion, a second reaction gas supplying portion, a separation gas supplying portion, an upper holding member that may be pressed on an upper center portion of the turntable and is made of one of quartz and a ceramic material; and a lower holding member that may be pressed on a lower center portion of the turntable in order to rotatably hold the turntable in cooperation with the upper holding member. | 03-04-2010 |
20100055297 | FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSING APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM FOR FILM DEPOSITION METHOD - There is disclosed a film deposition apparatus and a film deposition method for depositing a film on a substrate by carrying out cycles of supplying in turn at least two source gases to the substrate in order to form a layer of a reaction product, and a computer readable storage medium storing a computer program for causing the film deposition apparatus to carry out the film deposition method. | 03-04-2010 |
20100055312 | FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSING APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - In a film deposition apparatus which deposits a thin film on a substrate by supplying first and second reactive gases in a vacuum chamber, there are provided a turntable, a first reactive gas supplying portion and a second reactive gas supplying portion which are arranged to extend from circumferential positions of the turntable to a center of rotation of the turntable, a first separation gas supplying portion arranged between the first and second reactive gas supplying portions, a first space having a first height and including the first separation gas supplying portion, a second space having a second height and including the second reactive gas supplying portion, a third space having a height lower than the first height and the second height and including the first separation gas supplying portion, a position detecting unit detecting a rotation position of the turntable, and a detection part arranged at a circumferential portion of the turntable and detected by the position detecting unit. | 03-04-2010 |
20100055314 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND STORAGE MEDIUM - A disclosed film deposition apparatus includes a turntable including a substrate receiving area; a first reaction gas supplier for supplying a first reaction gas to a surface of the turntable having the substrate receiving area; a second reaction gas supplier, arranged away from the first reaction gas supplier along a circumferential direction of the turntable, for supplying a second reaction gas to the surface; a separation area located along the circumferential direction between a first process area of the first reaction gas and a second process area of the second reaction gas; a separation gas supplier for supplying a first separation gas to both sides of the separation area; a first heating unit for heating the first separation gas to the separation gas supplier; an evacuation opening for evacuating the gases supplied to the turntable; and a driver for rotating the turntable in the circumferential direction. | 03-04-2010 |
20100055317 | FILM DEPOSITION APPARATUS EXPOSING SUBSTRATE TO PLURAL GASES IN SEQUENCE - A film deposition apparatus for forming a thin film by supplying a first reactant gas and a second reactant gas in a vacuum container includes a rotation table, a first reactant gas supply unit and a second reactant gas supply unit extending radially at a first angular position and at a second angular position with respect to a rotation center, respectively, a first purge gas supply unit disposed at a third angular position between the first angular position and the second angular position, a first space having a first height in an area including the first angular position, a second space having a second height in an area including the second angular position, a third space disposed in an area including the third angular position having a height lower than the first height and the second height, and a heating unit configured to heat the first purge gas. | 03-04-2010 |
20100055319 | FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSOR, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - A film deposition apparatus for depositing a thin film on a substrate by feeding at least two kinds of reaction gases in a vacuum chamber includes a turntable; a substrate placement part on the turntable; a first and a second reaction gas feed part provided apart from each other to feed a first and a second reaction gas into a first and a second process region, respectively, on the turntable; a separation region positioned between the first and second process regions and including a first separation gas feed part to feed a first separation gas and a ceiling surface; a center part region positioned inside the vacuum chamber and including an ejection opening for ejecting a second separation gas; an evacuation port; and a drive part to rotate the turntable so that the substrate passes through the first and second process regions at different angular velocities of the turntable. | 03-04-2010 |
20100055347 | ACTIVATED GAS INJECTOR, FILM DEPOSITION APPARATUS, AND FILM DEPOSITION METHOD - An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom. | 03-04-2010 |
20100055351 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, COMPUTER READABLE STORAGE MEDIUM FOR STORING A PROGRAM CAUSING THE APPARATUS TO PERFORM THE METHOD - A disclosed film deposition apparatus includes a susceptor having in one surface a substrate receiving portion provided rotatably in a chamber; a heating unit including plural independently controllable heating portions, thereby heating the susceptor; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber. | 03-04-2010 |
20100068383 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A deposition apparatus includes plural first plate members arranged within a hermetically-sealable cylindrical chamber, wherein the plural first plate members each having an opening are arranged in a first direction along a center axis of the chamber with a first clearance therebetween; and plural second plate members arranged in the first direction with the first clearance therebetween, the plural second plate members being reciprocally movable through the openings of the plural first plate members. A first pair of first plate members among the plural first plate members provides a first passage for a first gas flowing in a second direction toward an inner circumferential surface of the chamber. A second pair of first plate members among the plural first plate members provides a second passage for a second gas flowing in the second direction. A pair of second plate members among the plural second plate members supports a wafer. | 03-18-2010 |
20100068893 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A film deposition apparatus includes a reaction chamber evacuatable to a reduced pressure; a substrate holding portion rotatably provided in the reaction chamber and configured to hold a substrate; a first reaction gas supplying portion configured to flow a first reaction gas from an outer edge portion toward a center portion of the substrate holding portion; a second reaction gas supplying portion configured to flow a second reaction gas from an outer edge portion toward a center portion of the substrate holding portion; a separation gas supplying portion configured to flow a separation gas from an outer edge portion toward a center portion of the substrate holding portion, the separation gas supplying portion being arranged between the first and the second gas supplying portions; and an evacuation portion located in the center portion of the substrate holding portion in order to evacuate the first, the second, and the separation gases. | 03-18-2010 |
20100116209 | FILM DEPOSITION APPARATUS - A film deposition apparatus including a rotational member is rotated by a rotation mechanism around a vertical axis inside a chamber, a pedestal in the chamber and including substrate receiving areas formed along a circle having the vertical axis as a center, and first and second reaction gas supplying parts provided separately along a circumferential direction of the circle and supplying first and second reaction gases to the pedestal, a separating area in the rotational member and between first and second process areas to which first and second reaction gases are supplied, an evacuation port to evacuate an atmosphere inside the chamber, a separation gas supplying part in the separating area for supplying a separation gas, and an opposing surface part in the separating area on both sides of the separation gas supplying part and at a position forming a thin space between the opposing surface part and the pedestal. | 05-13-2010 |
20100116210 | GAS INJECTOR AND FILM DEPOSITION APPARATUS - An injector body of a gas injector has a gas inlet and a gas passage; plural gas outflow openings disposed on a wall part of the injector body along a longitudinal direction of the injector body; and a guide member that provides a slit-shaped gas discharge opening extending in the longitudinal direction of the injector body on an outer surface of the injector body, and guides gas flowing from the gas outflow openings to the gas discharge opening. | 05-13-2010 |
20100122710 | FILM DEPOSITION APPARATUS, CLEANING METHOD FOR THE SAME, AND COMPUTER STORAGE MEDIUM STORING PROGRAM - A disclosed film deposition apparatus includes a susceptor provided rotatably in a chamber; a substrate receiving portion provided in one surface of the susceptor, for receiving a substrate; a reaction gas supplying member configured to supply a reaction gas to the one surface of the susceptor; a cleaning member including: a first concave member that is provided above the susceptor and open toward the one surface, thereby defining a space of an inverted concave shape, a second concave member provided over the first concave member to define a gas passage between the first concave member and the second concave member, a cleaning gas supplying portion configured to supply a cleaning gas to the space, and an evacuation pipe configured to be in gaseous communication with the gas passage and extend out from the chamber; and an evacuation opening provided in the chamber in order to evacuate the chamber. | 05-20-2010 |
20100132614 | FILM DEPOSITION APPARATUS - A film deposition apparatus includes a rotary table having a substrate placement area to support a substrate, a vacuum container including a container and a top panel, an open-and-close mechanism configured to open and close the top panel, reactant gas nozzles disposed through and supported by an outer wall of the container to be situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate placement area passes, the reactant gas nozzles having gas discharge ports arranged in radial directions to supply respective reactant gases to the wafer thereby to form respective process areas, a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation area that isolates atmospheres of the process areas from each other, and an exhaustion unit configured to exhaust atmosphere inside the vacuum container. | 06-03-2010 |
20100132615 | FILM DEPOSITION APPARATUS - In a film deposition apparatus, a first separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which a first reaction gas is supplied and a second process area to which a second reaction gas is supplied. A heater is provided to heat the turntable by radiation heat. An outer sidewall member is provided in a bottom part of a vacuum chamber to surround the turntable in an area where the heater is provided. A space forming member is provided between the separation areas adjacent to each other in a rotating direction of the turntable and extending from the outer sidewall member to form a narrow space between the turntable. A purge gas flows from a lower side of the turntable to an area outside the turntable in a radial direction through the narrow space. | 06-03-2010 |
20100227046 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A disclosed film deposition apparatus includes a transparent window in a ceiling plate of a vacuum chamber. A film thickness of a film deposited on a substrate is measured by emitting light to the substrate through the transparent window by a film thickness measurement system that includes optical units arranged on or above the transparent window, optical fiber cables connected to the corresponding optical units, a measurement unit to which the optical fiber cables are connected, and a control unit electrically connected to the measurement unit in order to control the measurement unit. | 09-09-2010 |
20100227059 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A film is deposited to a predetermined thickness on a wafer by allowing the wafer placed on a susceptor to alternately move through plural process areas where corresponding plural reaction gases are supplied from corresponding plural reaction gas supplying portions and a separation area where a separation gas is supplied from a separation gas supplying portion in order to separate the plural reaction gases. Such movement is achieved by rotating the susceptor relative to the plural reaction gas supplying portions and the separation gas supplying portion, or rotating the plural reaction gas supplying portions and the separation gas supplying portion relative to the susceptor. Then, when the film is deposited in the above manner to a predetermined thickness, the film deposition is temporarily stopped; the wafer is rotated around its center; and the film is deposited to another predetermined thickness in the same manner. | 09-09-2010 |
20100229797 | FILM DEPOSITION APPARATUS - A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor. | 09-16-2010 |
20100260935 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product. | 10-14-2010 |
20100260936 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate. | 10-14-2010 |
20110048326 | FILM FORMATION APPARATUS FOR SEMICONDUCTOR PROCESS - A film formation apparatus for a semiconductor process for forming a thin film on a target object by use of first and second reactive gases includes a vacuum container, an exhaust system, a rotary table configured to place the target object thereon, a rotating mechanism configured to rotate the rotary table, and a temperature adjusting mechanism configured to set the target object to a temperature at which the first reactive gas is condensed. Inside the vacuum container, a first reactive gas supply section configured to adsorb a condensed substance of the first reactive gas onto the target object, a vaporizing section configured to partly vaporize the condensed substance, and a second reactive gas supply section configured to cause the second reactive gas to react with the condensed substance are disposed in this order in a rotational direction of the rotary table. | 03-03-2011 |
20110151122 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber. | 06-23-2011 |
20140004713 | FILM FORMATION METHOD, FILM FORMATION APPARATUS AND STORAGE MEDIUM | 01-02-2014 |