Patent application number | Description | Published |
20080254376 | PHASE-SHIFTING MASK AND METHOD OF FABRICATING SAME - A phase-shifting mask is fabricated using two separate exposure processes. The mask includes a substrate and a device pattern area above the substrate. The mask has a mask pattern defining boundaries of the device pattern area and an administrative pattern area defining boundaries of the mask pattern. | 10-16-2008 |
20100271612 | METHOD AND PELLICLE MOUNTING APPARATUS FOR REDUCING PELLICLE INDUCED DISTORTION - An apparatus for mounting a pellicle onto a mask is provided. In one embodiment, the apparatus comprises a base provided with a track; a dummy plate holder coupled to the base, the dummy plate holder for receiving a dummy plate having an elevated portion on one side thereof; a mask holder for receiving a mask, the mask holder slidably coupled to the base; a pellicle holder for receiving a pellicle frame, the pellicle holder slidably coupled to the base; and drive means being adapted to drive the pellicle holder along the track towards the dummy plate holder, wherein during operation when the pellicle frame is mounted onto the mask causing the mask to contact the dummy plate, the mounting pressure in the mask is distributed by way of the elevated portion in the dummy plate, thus reducing distortion in the mask. | 10-28-2010 |
20130193565 | SEMICONDUCTOR MASK BLANKS WITH A COMPATIBLE STOP LAYER - Provided is a method for creating a mask blank that include a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detect of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer. | 08-01-2013 |
20140106262 | Image Mask Film Scheme and Method - A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process. | 04-17-2014 |
20140199787 | Semiconductor Mask Blanks with a Compatible Stop Layer - Provided is a method for creating a mask blank that includes a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detection of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer. | 07-17-2014 |
Patent application number | Description | Published |
20100184293 | PLANARIZATION PROCESS FOR PRE-DAMASCENE STRUCTURE INCLUDING METAL HARD MASK - A planarization process for a pre-damascene structure is described, wherein the pre-damascene structure includes a metal hard mask that is disposed on a first material layer with a damascene opening therein and a second material layer that fills the damascene opening and covers the metal hard mask. A first CMP step is conducted using a first slurry to remove the second material layer outside the damascene opening. A second CMP step is conducted using a second slurry to remove the metal hard mask. | 07-22-2010 |
20110189855 | METHOD FOR CLEANING SURFACE CONTAINING Cu - A method for cleaning a surface is disclosed. First, a substrate including Cu and a barrier layer is provided. Second, a first chemical mechanical polishing procedure is performed on the substrate. Then, a second chemical mechanical polishing procedure is performed on the barrier layer. The second chemical mechanical polishing procedure includes performing a main chemical mechanical polishing procedure to partially remove the barrier layer and performing a chemical buffing procedure on the substrate using a chemical solution which has a pH value of about 6 to about 8 to remove residues on the substrate after the main chemical mechanical polishing procedure. Later, a water rinsing procedure is performed on the substrate. Afterwards, a post clean procedure is performed on the substrate after the second chemical mechanical polishing procedure. | 08-04-2011 |
20120244669 | Method of Manufacturing Semiconductor Device Having Metal Gates - The present invention provides a method of manufacturing semiconductor device having metal gates. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench. Then, a first metal layer is formed in the first trench. The second sacrifice gate is removed to form a second trench. Next, a second metal layer is formed in the first trench and the second trench. Lastly, a third metal layer is formed on the second metal layer wherein the third metal layer is filled into the first trench and the second trench. | 09-27-2012 |
20120264302 | CHEMICAL MECHANICAL POLISHING PROCESS - A chemical mechanical polishing (CMP) process includes steps of providing a substrate, performing a first polishing step to the substrate with an acidic slurry, and performing a second polishing step to the substrate with a basic slurry after the first polishing step. | 10-18-2012 |
20120322265 | POLY OPENING POLISH PROCESS - A poly opening polish process includes the following steps. A semi-finished semiconductor component is provided. The semi-finished semiconductor component includes a substrate, a gate disposed on the substrate, and a dielectric layer disposed on the substrate and covering the gate. A first polishing process is applied onto the dielectric layer. A second polishing process is applied to the gate. The second polishing process utilizes a wetting solution including a water soluble polymer surfactant, an alkaline compound and water. The poly opening polish process can effectively remove an oxide residue formed in the chemical mechanical polish, thereby improving the performance of the integrated circuit and reducing the production cost of the integrated circuit. | 12-20-2012 |
20130011938 | METHOD FOR MANUFACTURING THROUGH-SILICON VIA - A method for manufacturing TSVs, wherein the method comprises several steps as follows: A stack structure having a substrate and an ILD layer (inter layer dielectric layer) is provided, in which an opening penetrating through the ILD layer and further extending into the substrate is formed. After an insulator layer and a metal barrier layer are formed on the stack structure and the sidewalls of the opening, a top metal layer is then formed on the stack structure to fulfill the opening. A first planarization process stopping on the barrier layer is conducted to remove a portion of the top metal layer. A second planarization process stopping on the ILD layer is subsequently conducted to remove a portion of the metal barrier layer, a portion of the insulator layer and a portion of the top metal layer, wherein the second planarization process has a polishing endpoint determined by a light interferometry or a motor current. | 01-10-2013 |
20130015524 | SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOFAANM Hsu; Chun-WeiAACI Taipei CityAACO TWAAGP Hsu; Chun-Wei Taipei City TWAANM Huang; Po-ChengAACI Chiayi CityAACO TWAAGP Huang; Po-Cheng Chiayi City TWAANM Tsai; Teng-ChunAACI Tainan CityAACO TWAAGP Tsai; Teng-Chun Tainan City TWAANM Hsu; Chia-LinAACI Tainan CityAACO TWAAGP Hsu; Chia-Lin Tainan City TWAANM Lin; Chih-HsunAACI Ping-Tung CountyAACO TWAAGP Lin; Chih-Hsun Ping-Tung County TWAANM Chen; Yen-MingAACI New Taipei CityAACO TWAAGP Chen; Yen-Ming New Taipei City TWAANM Chen; Chia-HsiAACI Kao-Hsiung CityAACO TWAAGP Chen; Chia-Hsi Kao-Hsiung City TWAANM Kung; Chang-HungAACI Kaohsiung CityAACO TWAAGP Kung; Chang-Hung Kaohsiung City TW - A semiconductor device having a metal gate includes a substrate having a plurality of shallow trench isolations (STIs) formed therein, at least a metal gate positioned on the substrate, and at least a pair of auxiliary dummy structures respectively positioned at two sides of the metal gate and on the substrate. | 01-17-2013 |
20130052778 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate. An oxide layer is formed on the substrate without the fin-shaped structure being formed thereon. A gate is formed to cover a part of the oxide layer and a part of the fin-shaped structure. An etching process is performed to etch a part of the fin-shaped structure beside the gate, therefore at least a recess is formed in the fin-shaped structure. An epitaxial process is performed to form an epitaxial layer in the recess, wherein the epitaxial layer has a hexagon-shaped profile structure. | 02-28-2013 |
20130052825 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A first gate structure and a second gate structure are formed on a substrate, wherein the top of the first gate structure includes a cap layer, so that the vertical height of the first gate structure is higher than the vertical height of the second gate structure. An interdielectric layer is formed on the substrate. A first chemical mechanical polishing process is performed to expose the top surface of the cap layer. A second chemical mechanical polishing process is performed to expose the top surface of the second gate structure or an etching process is performed to remove the interdielectric layer located on the second gate structure. A second chemical mechanical polishing process is then performed to remove the cap layer. | 02-28-2013 |
20130105912 | SEMICONDUCTOR DEVICE | 05-02-2013 |
20130122698 | METHOD FOR MANUFACTURING MULTI-GATE TRANSISTOR DEVICE - A method for manufacturing multi-gate transistor device includes providing a semiconductor substrate having a patterned semiconductor layer and a patterned hard mask sequentially formed thereon, removing the patterned hard mask, performing a thermal treatment to rounding the patterned semiconductor layer with a process temperature lower than 800° C., and sequentially forming a gate dielectric layer and a gate layer covering a portion of the patterned semiconductor layer on the semiconductor substrate. | 05-16-2013 |
20130270612 | Non-Planar FET and Manufacturing Method Thereof - The present invention provides a non-planar FET which includes a substrate, a fin structure, a gate and a gate dielectric layer. The fin structure is disposed on the substrate. The fin structure includes a first portion adjacent to the substrate wherein the first portion shrinks towards a side of the substrate. The gate is disposed on the fin structure. The gate dielectric layer is disposed between the fin structure and the gate. The present invention further provides a method of manufacturing the non-planar FET. | 10-17-2013 |
20130288448 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A semiconductor substrate is provided. The semiconductor substrate has a patterned isolation layer and the patterned isolation layer has an opening exposing a silicon area of the semiconductor substrate. A silicon rich layer is formed on the sidewalls of the opening. An epitaxial process is performed to form an epitaxial structure on the silicon area in the opening. | 10-31-2013 |
20130341638 | MULTI-GATE FIELD-EFFECT TRANSISTOR AND PROCESS THEREOF - A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from bottom to top. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor. | 12-26-2013 |
20140065775 | FABRICATION METHOD FOR SEMICONDUCTOR DEVICES - A method of fabricating a semiconductor device includes the following steps. First, a semiconductor substrate is provided, which includes at least a fin structure and at least a gate semiconductor layer disposed thereon. The gate semiconductor layer covers a portion of the fin structure. Then a sacrificial layer is deposited to cover the fin structure entirely. Subsequently, a top surface of the fin structure is exposed from the sacrificial layer through an etching process. A material layer is then deposited, which covers the gate semiconductor layer, the fin structure and the sacrificial layer conformally. Finally, the material layer is etched until the top surface of the fin structure is exposed and a first spacer is concurrently formed on side surfaces of the gate semiconductor layer. | 03-06-2014 |
20140094017 | MANUFACTURING METHOD FOR A SHALLOW TRENCH ISOLATION - A manufacturing method for a shallow trench isolation. First, a substrate is provided, a hard mask layer and a patterned photoresist layer are sequentially formed on the substrate, at least one trench is then formed in the substrate through an etching process, the hard mask layer is removed. Afterwards, a filler is formed at least in the trench and a planarization process is then performed on the filler. Since the planarization process is performed only on the filler, so the dishing phenomenon can effectively be avoided. | 04-03-2014 |
20140106558 | SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF - A semiconductor device having a metal gate includes a substrate having a plurality of shallow trench isolations (STIs) formed therein, at least a metal gate positioned on the substrate, and at least a pair of auxiliary dummy structures respectively positioned at two sides of the metal gate and on the substrate. | 04-17-2014 |
20140117455 | MULTIGATE FIELD EFFECT TRANSISTOR AND PROCESS THEREOF - A multigate field effect transistor includes two fin-shaped structures and a dielectric layer. The fin-shaped structures are located on a substrate. The dielectric layer covers the substrate and the fin-shaped structures. At least two voids are located in the dielectric layer between the two fin-shaped structures. Moreover, the present invention also provides a multigate field effect transistor process for forming said multigate field effect transistor including the following steps. Two fin-shaped structures are formed on a substrate. A dielectric layer covers the substrate and the two fin-shaped structures, wherein at least two voids are formed in the dielectric layer between the two fin-shaped structures. | 05-01-2014 |
20140273371 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the resistor region of the substrate; forming a tank in the STI; and forming a resistor in the tank and on two sides of the top surface of the STI outside the tank. | 09-18-2014 |
20140295634 | MULTI-GATE FIELD-EFFECT TRANSISTOR PROCESS - A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from inner to outer. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor. | 10-02-2014 |
20140367779 | SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF - A semiconductor structure includes a fin-shaped structure and a gate. The fin-shaped structure is located in a substrate, wherein the fin-shaped structure has a through hole located right below a vacant part. The gate surrounds the vacant part. Moreover, the present invention also provides a semiconductor process including the following steps for forming said semiconductor structure. A substrate is provided. A fin-shaped structure is formed in the substrate, wherein the fin-shaped structure has a bottom part and a top part. A part of the bottom part is removed to form a vacant part in the corresponding top part, thereby forming the vacant part over a through hole. A gate is formed to surround the vacant part. | 12-18-2014 |
20140370701 | METHOD OF FABRICATING SEMICONDUCTOR PATTERNS - A method of fabricating semiconductor patterns includes steps as follows: Firstly, a substrate is provided and has at least a first semiconductor pattern and at least a second semiconductor pattern, wherein a line width of the first semiconductor pattern is identical to a line width of the second semiconductor pattern. Then, a barrier pattern is formed over a surface of the first semiconductor pattern, and the second semiconductor pattern is exposed. Then, a surface portion of the second semiconductor pattern is reacted to form a sacrificial structure layer. Then, the barrier pattern and the sacrificial structure layer are removed, and the line width of the second semiconductor pattern is shrunken to be less than the line width of the first semiconductor pattern. A third semiconductor pattern having a line width can be further provided. | 12-18-2014 |
20150079780 | METHOD OF FORMING SEMICONDUCTOR STRUCTURE - A method of forming a semiconductor device is disclosed. A gate structure is formed on a substrate. The gate structure includes a dummy gate and a spacer at a sidewall of the dummy gate. A dielectric layer is formed on the substrate outside of the gate structure. A metal hard mask layer is formed to cover tops of the dielectric layer and the spacer and to expose a surface of the gate structure. The dummy gate is removed to form a gate trench. A low-resistivity metal layer is formed on the metal hard mask layer filling in the gate trench. The low-resistivity metal layer outside of the gate trench is removed. The metal hard mask layer is removed. | 03-19-2015 |
Patent application number | Description | Published |
20120223397 | METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a metal gate structure includes providing a substrate having a high-K gate dielectric layer and a bottom barrier layer sequentially formed thereon, forming a work function metal layer on the substrate, and performing an anneal treatment to the work function metal layer in-situ. | 09-06-2012 |
20120256275 | METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a metal gate structure includes first providing a substrate having a dummy gate formed thereon. The dummy gate includes a high-K gate dielectric layer, a bottom barrier layer, a first etch stop layer and a sacrificial layer sequentially and upwardly stacked on the substrate. Then, the sacrificial layer is removed to form a gate trench with the first etch stop layer exposed on the bottom of the gate trench. After forming the gate trench, a first work function metal layer is formed in the gate trench. | 10-11-2012 |
20120261770 | METAL GATE STRUCTURE - A metal gate structure includes a high-K gate dielectric layer, an N-containing layer, a work function metal layer, and an N-trapping layer. The N-containing layer is positioned between the work function metal layer and the high-K gate dielectric layer. The N-trapping layer is positioned between the work function metal layer and the high-K gate dielectric layer, and the N-trapping layer contains no nitrogen or low-concentration nitrogen. | 10-18-2012 |
20120295437 | METHOD FOR FABRICATING THROUGH-SILICON VIA STRUCTURE - A method for fabricating through-silicon via structure is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a through-silicon via in the semiconductor substrate; covering a liner in the through-silicon via; performing a baking process on the liner; forming a barrier layer on the liner; and forming a through-silicon via electrode in the through-silicon via. | 11-22-2012 |
20120305403 | Electrical Chemical Plating Process - An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure. | 12-06-2012 |
20120319179 | METAL GATE AND FABRICATION METHOD THEREOF - A metal gate includes a substrate, a gate dielectric layer, a work function metal layer, an aluminum nitride layer and a stop layer. The gate dielectric layer is located on the substrate. The work function metal layer is located on the gate dielectric layer. The aluminum nitride layer is located on the work function metal layer. The stop layer is located on the aluminum nitride layer. | 12-20-2012 |
20120322218 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes the following steps. Firstly, a dummy gate structure having a dummy gate electrode layer is provided. Then, the dummy gate electrode layer is removed to form an opening in the dummy gate structure, thereby exposing an underlying layer beneath the dummy gate electrode layer. Then, an ammonium hydroxide treatment process is performed to treat the dummy gate structure. Afterwards, a metal material is filled into the opening. | 12-20-2012 |
20120326243 | TRANSISTOR HAVING ALUMINUM METAL GATE AND METHOD OF MAKING THE SAME - A transistor having an aluminum metal gate includes a substrate, a high-k gate dielectric layer, an aluminum metal gate and a source/drain region. The high-k gate dielectric layer is disposed on the substrate. The aluminum metal gate includes a work function tuning layer and an aluminum metal layer disposed orderly on the high-k gate dielectric layer, where the aluminum metal layer comprises a first aluminum metal layer and a second aluminum metal layer. Furthermore, the source/drain region is disposed in the substrate at each of two sides of the aluminum metal gate. | 12-27-2012 |
20130045595 | METHOD FOR PROCESSING METAL LAYER - The method for processing a metal layer including the following steps is illustrated. First, a semiconductor substrate is provided. Then, a metal layer is formed over the semiconductor substrate. Furthermore, a microwave energy is used to selectively heat the metal layer without affecting the underlying semiconductor substrate and other formed structures, in which the microwave energy has a predetermined frequency in accordance with a material of the metal layer, and the predetermined frequency ranges between 1 KHz to 1 MHz. | 02-21-2013 |
20130154012 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING METAL GATE - A manufacturing method for semiconductor device having metal gate includes providing a substrate having a first semiconductor device and a second semiconductor device formed thereon, the first semiconductor device having a first gate trench and the second semiconductor device having a second gate trench; sequentially forming a high dielectric constant (high-k) gate dielectric layer and a multiple metal layer on the substrate; forming a first work function metal layer in the first gate trench; performing a first pull back step to remove a portion of the first work function metal layer from the first gate trench; forming a second work function metal layer in the first gate trench and the second gate trench; and performing a second pull back step to remove a portion of the second work function metal layer from the first gate trench and the second gate trench. | 06-20-2013 |
20130168744 | Semiconductor Device Having a Metal Gate and Fabricating Method Thereof - The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon, wherein the work function metal layer is on the gate dielectric layer. Then, a top barrier layer is formed on the work function metal layer. The step of forming the top barrier layer includes increasing a concentration of a boundary protection material in the top barrier layer. Lastly, a metal layer is formed on the top barrier layer. The present invention further provides a semiconductor device having a metal gate. | 07-04-2013 |
20130178063 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING SILICON THROUGH VIA - A method of manufacturing semiconductor device having silicon through via is disclosed, and conductor can be fully filled in the silicon through via. First, a silicon substrate is provided. Then, the silicon substrate is etched to form a through silicon via (TSV), and the through silicon via extends down from a surface of the silicon substrate. Next, a barrier layer is formed on the silicon substrate and in the through silicon via. Then, a seed layer is formed on the barrier layer and in the through silicon via. Afterward, a wet treatment is performed on the seed layer over the silicon substrate and within the through silicon via. The through silicon via is then filled with a conductor. | 07-11-2013 |
20130214336 | METHOD FOR FILLING TRENCH WITH METAL LAYER AND SEMICONDUCTOR STRUCTURE FORMED BY USING THE SAME - A method for filling a trench with a metal layer is disclosed. A deposition apparatus having a plurality of supporting pins is provided. A substrate and a dielectric layer disposed thereon are provided. The dielectric layer has a trench. A first deposition process is performed immediately after the substrate is placed on the supporting pins to form a metal layer in the trench, wherein during the first deposition process a temperature of the substrate is gradually increased to reach a predetermined temperature. When the temperature of the substrate reaches the predetermined temperature, a second deposition process is performed to completely fill the trench with the metal layer. | 08-22-2013 |
20130320537 | THROUGH SILICON VIA (TSV) STRUCTURE AND PROCESS THEREOF - A through silicon via structure is located in a recess of a substrate. The through silicon via structure includes a barrier layer, a buffer layer and a conductive layer. The barrier layer covers a surface of the recess. The buffer layer covers the barrier layer. The conductive layer is located on the buffer layer and fills the recess, wherein the contact surface between the conductive layer and the buffer layer is smoother than the contact surface between the buffer layer and the barrier layer. Moreover, a through silicon via process forming said through silicon via structure is also provided. | 12-05-2013 |
20130334690 | SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF - A semiconductor structure includes a work function metal layer, a (work function) metal oxide layer and a main electrode. The work function metal layer is located on a substrate. The (work function) metal oxide layer is located on the work function metal layer. The main electrode is located on the (work function) metal oxide layer. Moreover a semiconductor process forming said semiconductor structure is also provided. | 12-19-2013 |
20140017888 | SALICIDE PROCESS - A salicide process is described. A substrate having thereon an insulating layer and a silicon-based region is provided. A nickel-containing metal layer is formed on the substrate. A first anneal process is performed to form a nickel-rich silicide layer on the silicon-based region. The remaining nickel-containing metal layer is stripped. A thermal recovery process is performed at a temperature of 150-250° C. for a period longer than 5 minutes. A second anneal process is performed to change the phase of the nickel-rich silicide layer and form a low-resistivity mononickel silicide layer. | 01-16-2014 |
20140054654 | MOS TRANSISTOR AND PROCESS THEREOF - A MOS transistor includes a gate structure on a substrate, and the gate structure includes a wetting layer, a transitional layer and a low resistivity material from bottom to top, wherein the transitional layer has the properties of a work function layer, and the gate structure does not have any work function layers. Moreover, the present invention provides a MOS transistor process forming said MOS transistor. | 02-27-2014 |
20140057434 | THROUGH SILICON VIA PROCESS - A through silicon via process includes the following steps. A substrate having a front side and a back side is provided. A passivation layer is formed on the back side of the substrate. An oxide layer is formed on the passivation layer. | 02-27-2014 |
20140097507 | Semiconductor Device Having a Metal Gate and Fabricating Method Thereof - The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon, wherein the work function metal layer is on the gate dielectric layer. Then, a top barrier layer is formed on the work function metal layer. The step of forming the top barrier layer includes increasing a concentration of a boundary protection material in the top barrier layer. Lastly, a metal layer is formed on the top barrier layer. The present invention further provides a semiconductor device having a metal gate. | 04-10-2014 |
20140106557 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING METAL GATE - A manufacturing method for semiconductor device having metal gate includes providing a substrate having a first semiconductor device and a second semiconductor device formed thereon, the first semiconductor device having a first gate trench and the second semiconductor device having a second gate trench; sequentially forming a high dielectric constant (high-k) gate dielectric layer and a multiple metal layer on the substrate; forming a first work function metal layer in the first gate trench; performing a first pull back step to remove a portion of the first work function metal layer from the first gate trench; forming a second work function metal layer in the first gate trench and the second gate trench; and performing a second pull back step to remove a portion of the second work function metal layer from the first gate trench and the second gate trench. | 04-17-2014 |
20140120711 | METHOD OF FORMING METAL GATE - Provided is a method of forming a metal gate including the following steps. A dielectric layer is formed on a substrate, wherein a gate trench is formed in the dielectric layer and a gate dielectric layer is formed in the gate trench. A first metal layer is formed in the gate trench by applying a AC bias between a target and the substrate during physical vapor deposition. A second metal layer is formed in the gate trench by applying a DC bias between the target and the substrate during physical vapor deposition. | 05-01-2014 |
20140239419 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device is provided. A silicon substrate is provided, and a gate insulating layer is formed on the silicon substrate. Then, a silicon barrier layer is formed on the gate insulating layer by the physical vapor deposition (PVD) process. Next, a silicon-containing layer is formed on the silicon barrier layer. The silicon barrier layer of the embodiment is a hydrogen-substantial-zero silicon layer, which has a hydrogen concentration of zero substantially. | 08-28-2014 |
20140242802 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A wafer on a pedestal is provided. The pedestal is lifted to approach a heating source and an etching process is performed on the wafer. An annealing process is performed on the wafer by the heating source. In another way, a wafer on a pedestal, and a heating source on a same side of the wafer as the pedestal are provided. An etching process is performed on the wafer by setting the temperature difference between the heating source and the pedestal larger than 180° C. | 08-28-2014 |
20140252423 | SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF - A manufacturing method of semiconductor devices having metal gate includes following steps. A substrate having a first semiconductor device and a second semiconductor device formed thereon is provided. The first semiconductor device includes a first gate trench and the second semiconductor device includes a second gate trench. A first work function metal layer is formed in the first gate trench and the second gate trench. A portion of the first work function metal layer is removed from the second gate trench. A second work function metal layer is formed in the first gate trench and the second gate trench. The second work function metal layer and the first work function metal layer include the same metal material. A third work function metal layer and a gap-filling metal layer are sequentially formed in the first gate trench and the second gate trench. | 09-11-2014 |
20140306273 | STRUCTURE OF METAL GATE STRUCTURE AND MANUFACTURING METHOD OF THE SAME - A manufacturing method of a metal gate structure is provided. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function layer is formed on the gate dielectric layer in the gate trench. Finally, the gate trench is filled up with a conductive metal layer. | 10-16-2014 |
20140346616 | TRANSISTOR AND SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a work function metal layer, a (work function) metal oxide layer and a main electrode. The work function metal layer is located on a substrate. The (work function) metal oxide layer is located on the work function metal layer. The main electrode is located on the (work function) metal oxide layer. A semiconductor process forming said semiconductor structure is also provided. | 11-27-2014 |
20140361386 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device including a substrate, a gate structure, a second dielectric layer and a source/drain region. A first dielectric layer is disposed on the substrate, and the first dielectric layer has a trench therein. The gate structure is disposed on the substrate in the trench and includes a work function metal layer and a metal layer. The work function metal layer is disposed in the trench, and includes a TiAl | 12-11-2014 |
20140374909 | METHOD FOR FILLING TRENCH WITH METAL LAYER AND SEMICONDUCTOR STRUCTURE FORMED BY USING THE SAME - A method for filling a trench with a metal layer is disclosed. A deposition apparatus having a plurality of supporting pins is provided. A substrate and a dielectric layer disposed thereon are provided. The dielectric layer has a trench. A first deposition process is performed immediately after the substrate is placed on the supporting pins to form a metal layer in the trench, wherein during the first deposition process a temperature of the substrate is gradually increased to reach a predetermined temperature. When the temperature of the substrate reaches the predetermined temperature, a second deposition process is performed to completely fill the trench with the metal layer. The present invention further provides a semiconductor device having an aluminum layer with a reflectivity greater than 1, wherein the semiconductor device is formed by using the method. | 12-25-2014 |
20150061042 | METAL GATE STRUCTURE AND METHOD OF FABRICATING THE SAME - A metal gate structure is provided. The metal gate structure includes a semiconductor substrate, a gate dielectric layer, a multi-layered P-type work function layer and a conductive metal layer. The gate dielectric layer is disposed on the semiconductor substrate. The multi-layered P-type work function layer is disposed on the gate dielectric layer, and the multi-layered P-type work function layer includes at least a crystalline P-type work function layer and at least an amorphous P-type work function layer. Furthermore, the conductive metal layer is disposed on the multi-layered P-type work function layer. | 03-05-2015 |
Patent application number | Description | Published |
20110090317 | STEREOVISION SYSTEM AND METHOD FOR CALCUALTING DISTANCE BETWEEN OBJECT AND DIFFRACTIVE OPTICAL ELEMENT - A stereovision system is disclosed, which comprises: at least one diffractive optical element and an optical imaging device. Each of the diffractive optical element is used for allowing a first beam containing information relating to an object to pass through and thus transforming the same into a second beam containing information relating to the object. The optical imaging device is used for receiving the second beam so as to concentrate the energy thereof for forming an M | 04-21-2011 |
20110141412 | COLOR SEPARATION SYSTEM - A color separation system is disclosed, which comprises: a backlight source, being highly collimated and used for providing an incident beam; a color separation module, formed with a first color separation film for separating the incident beam basing on wavelength while deflecting the optical paths of the resulting split beams; and a beam splitting module, being configured with at least one beam splitting plate and a liquid crystal layer; wherein, the at least one beam splitting plate is used for converging the beams from the color separation module while deflecting the optical paths thereof for enabling those to be discharged thereout following a normal direction of a light emitting surface of the backlight source. | 06-16-2011 |
20110235865 | ADJUSTABLE RANGE FINDER AND THE METHOD THEREOF - An adjustable range finder and the method thereof are disclosed, in which the method comprising: projecting a first beam containing information of an object on a refractive optical element, being comprised a liquid-crystal layer, electrically connected to a voltage device, and a transmission blazed grating, so as to generate a second beam; enabling the voltage device to provide a first voltage to the liquid-crystal layer for forming an energy-concentrated M | 09-29-2011 |
20120147475 | COLLIMATING OPTICAL ELEMENT AND COLLIMATING OPTICAL ASSEMBLY - The collimating optical element includes a light incident surface and a light emission curved surface. The light incident surface receives a light emitted by a light source. The light emission curved surface and a first plane are intersected to form a first curve. The first curve has a plurality of first curve segments, and each first curve segment includes at least three first tangent points. After passing each first tangent point along a connecting line of the light source and each first tangent point, the light exits along a first collimation axis, and an included angle formed between the first collimation axis and an optic axis is greater than −15° and smaller than 15°. Thus, the light after passing the collimating optical element forms a one-dimensional collimating light. | 06-14-2012 |
20120147476 | COLLIMATING OPTICAL ELEMENT, COLLIMATING OPTICAL ASSEMBLY, COLLIMATING OPTICAL ARRAY AND COLLIMATING OPTICAL MODULE - The collimating optical element includes a light incident surface and a light emission curved surface. The light incident surface receives a light emitted by a light source. The light emission curved surface and a first plane are intersected to form a first curve. The first curve has a plurality of first curve segments, and each first curve segment includes at least three first tangent points. After passing each first tangent point along a connecting line of the light source and each first tangent point, the light exits along a first collimation axis, and an included angle formed between the first collimation axis and an optic axis is greater than −15° and smaller than 15°. Thus, the light after passing the collimating optical element forms a one-dimensional collimating light. | 06-14-2012 |
20130160820 | FOCUSING SOLAR LIGHT GUIDE MODULE - A focusing solar light guide module includes a lens array plate and a light guide plate. The lens array plate includes at least one lens. Each lens receiving and focusing a sunlight has an upper curved surface and a lower plane surface. The light guide plate has an upper plane surface parallel to the lower plane surface of the lens array plate and a lower microstructure surface. The lower microstructure surface includes at least one depressed area and at least one connection area parallel to the upper plane surface of the light guide plate. The connection area is connected between the adjacent depressed areas having a depressed point, a first inclined plane and a second inclined plane. The first inclined plane and the second inclined plane are respectively connected between the depressed point and the adjacent connection area. | 06-27-2013 |
Patent application number | Description | Published |
20090172879 | Playpen that is Movable and Foldable Easily and Quickly - A playpen includes a frame, four upper folding devices, two lower folding devices, a pull cord, and two lower collapsible devices. Each of the lower folding devices includes a first connecting member, a second connecting member, a mounting bracket, a locking member, an elastic member, and a compression spring. Each of the lower collapsible devices has a second compression spring. Thus, each of the lower folding devices is operated to fold the frame in a first stage, and each of the lower collapsible devices is operated to fold the frame in a second stage, so that the playpen is folded in a two-stage manner. In addition, the user only needs to pull the pull cord to unlock each of the lower folding devices so as to partially fold the frame easily and quickly. | 07-09-2009 |
20100013195 | Foldable Stroller - A foldable stroller includes a support frame including two back posts, a first folding bar, a second folding bar, a third folding bar, a fourth folding bar, a bottom bracket, and a slide. The two back posts are rotated backward and downward toward the first folding bar to fold the third folding bar and the second folding bar between the two back posts and the first folding bar and to fold the bottom bracket under the first folding bar so as to fold the stroller. Thus, when the stroller is folded, the back posts are rotated backward and downward to reduce the volume of the support frame to the minimum value so that the folded stroller has the smallest volume, thereby facilitating storage and transportation of the stroller when not in use. | 01-21-2010 |
20100132115 | Baby Playpen Whose Enclosure Cloth Will Not Be Rubbed or Worn Out By The Posts - A playpen includes a support frame, an enclosure cloth, and a plurality of fixing bars. The support frame includes a plurality of support posts each provided with a mounting tube. Each of the fixing bars has a first end provided with a fixing column inserted into the mounting tube and a second portion provided with a connecting strip. Thus, the connecting strip of each of the fixing bars is secured on the enclosure cloth and protrudes outwardly from the mounting tube to separate the enclosure cloth from the mounting tube of each of the support posts so that the enclosure cloth will not directly contact with the mounting tube of each of the support posts to prevent the enclosure cloth from being rubbed or worn out due to a frequent frictional contact. | 06-03-2010 |
20130117930 | Combination playpen that is partially assembled and disassembled easily and quickly - A combination playpen includes a playpen and a removable bed detachably combined with the playpen. The playpen includes a playpen body and at least one first zipper mounted in the playpen body. The removable bed includes a bed body detachably mounted in the playpen body of the playpen, a second zipper mounted on the bed body, and a pull tab mounted on the second zipper and detachably connected with the first zipper of the playpen. Thus, the first zipper of the playpen and the second zipper of the removable bed are connected or disconnected by operation of the pull tab of the removable bed so that the removable bed can be mounted on and detached from the playpen easily and quickly, thereby facilitating the user assembling and disassembling the removable bed. | 05-16-2013 |
20130147162 | Stroller Having Shock-Absorbing Function - A stroller includes a frame unit, two folding devices, and a wheel unit. The frame unit includes a rear support frame, an upper support frame and a lower support frame. Each of the folding devices includes a first shell, a second shell, a gear set, and a pulling mechanism. The gear set includes at least two first toothed members, a connecting rod, a second toothed member, and a fixing rod. The pulling mechanism includes a locking member, a locking rod, a tension spring, a pull member, a drive wire and a fastening member. The wheel unit includes a main shaft, a mounting seat, an elastic plate, a wheel bracket, a buffering spring, and two front wheels. The buffering spring is biased between the mounting seat and the wheel bracket to provide a shock-absorbing function to the front wheels. | 06-13-2013 |
Patent application number | Description | Published |
20120057098 | COLOR LIQUID CRYSTAL DISPLAY DEVICE - A color liquid crystal display device includes a liquid crystal display element and a backlight unit. The liquid crystal display element includes a color filter having a red filter segment, a green filter segment, and a blue filter segment. The red filter segment is prepared from a red photosensitive resin composition which includes a pigment combination, an alkali-soluble resin, a compound having an ethylenic group, and a photoinitiator. The pigment combination includes an azo-based red pigment and an anthraquinone-based red pigment. A weight ratio of the azo-based red pigment to the anthraquinone-based red pigment ranges from 20/80 to 80/20. The backlight unit is coupled to the liquid crystal display element and has a color temperature ranging from 6,000 K to 20,000 K. | 03-08-2012 |
20120162575 | COLOR LIQUID CRYSTAL DISPLAY DEVICE - A color liquid crystal display device includes a liquid crystal display element and a backlight unit. The liquid crystal display element includes a color filter having a red filter segment, a green filter segment, and a blue filter segment. The blue filter segment is prepared from blue photosensitive resin composition. The blue photosensitive resin composition includes a pigment combination, an alkali-soluble resin, a compound having an ethylenic group, and a photoinitiator. The pigment combination includes a copper phthalocyanine-based blue pigment. The color filter has a z value ranging from 0.3 to 0.5 in a chromaticity diagram of a XYZ color system. The backlight unit is coupled to the liquid crystal display element and has a color temperature ranging from 8,000 K to 20,000 K. | 06-28-2012 |
20130142966 | BLUE PHOTOSENSITIVE RESIN COMPOSITION FOR COLOR FILTERS AND USES THEREOF - The invention relates to a blue photosensitive resin composition, and the smoothness of the edge profile formed thereby after development is good. Furthermore, the contrast of a liquid crystal display device manufactured with the blue photosensitive resin composition is excellent. The invention also provides a method for manufacturing a color filter, a color filter and a liquid crystal display device are also provided in the invention. | 06-06-2013 |
20130208215 | COLOR LIQUID CRYSTAL DISPLAY DEVICE - A color liquid crystal display device includes a liquid crystal display element and a backlight unit. The liquid crystal display element includes a color filter having a blue filter segment, a green filter segment, and a red filter segment. The green filter segment is prepared from a green photosensitive resin composition which includes a halogenated-phthalocyanine-based green pigment component, a yellow pigment component, an alkali-soluble resin, a compound having at least one ethylenically unsaturated group, and a photoinitiator. A weight ratio of the halogenated-phthalocyanine-based green pigment component to the yellow pigment ranges from 60/40 to 95/5. The backlight unit has a color temperature ranging from 8,000 K to 20,000 K. | 08-15-2013 |
20130222738 | COLOR LIQUID CRYSTAL DISPLAY DEVICE - A color liquid crystal display device having high color reproduction is provided, which includes a liquid crystal display element and a backlight unit. The liquid crystal display element includes a color filter having a blue filter segment, a green filter segment, and a red filter segment. The blue filter segment is prepared from a blue photosensitive resin composition which includes a blue pigment combination, a red dye component, an alkali-soluble resin, a compound having at least one ethylenically unsaturated group, a photoinitiator, and a solvent. The blue pigment combination includes a copper phthalocyanine-based blue pigment. The backlight unit is coupled to the liquid crystal display element and has a color temperature ranging from 8,000 K to 20,000 K. | 08-29-2013 |
20130299755 | PHOTOSENSITIVE RESIN COMPOSITION FOR A COLOR FILTER AND USES THEREOF - The invention relates to a photosensitive resin composition, and it has the advantages of a high development speed and good compatibility. The invention also provides a method for manufacturing a color filter, color filter and liquid crystal display device. | 11-14-2013 |
20140091267 | PHOTOSENSITIVE RESIN COMPOSITION FOR COLOR FILTERS AND USES THEREOF - The invention relates to a photosensitive resin composition, and a color filter produced thereby has the advantages of no bubble display and little color difference before and after development. The invention also provides a method for manufacturing a color filter, color filter and liquid crystal display device. | 04-03-2014 |
20140124716 | PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATION OF THE SAME - A photosensitive resin composition and application of the same are provided. The photosensitive resin composition comprises an alkali-soluble resin (A), a compound (B) containing vinyl unsaturated group(s), a photo initiator (C), an organic solvent (D), a pigment (E) and a metal chelating agent (F). During a pixel process with an omission of a prebake step, the photosensitive resin composition, which is added with the metal chelating agent (F), can be formed to pixels that is adhered tightly to a substrate. | 05-08-2014 |
20140246633 | PHOTOSENSITIVE RESIN COMPOSITION FOR COLOR FILTERS AND USES THEREOF - A photosensitive resin composition for color filter including an alkai-soluble resin (A-1), an alkai-soluble resin (A-2) having a functional group represented by formula (2), a compound (B) having an ethylenically unsaturated group, a photoinitiator (C), an organic solvent (D), and a pigment (E) is provided, wherein the alkai-soluble resin (A-1) is formed by copolymerizing an ethylenically unsaturated monomer (a-1) having a carboxylic acid group, a compound (a-2) having a cyclicimide group represented by formula (1), and other copolymerizable ethylenically unsaturated monomers (a-3) except for the ethylenically unsaturated monomer (a-1) having the carboxylic acid group and the compound (a-2) having the cyclicimide group represented by formula (1). | 09-04-2014 |
20140346416 | PHOTOSENSITIVE RESIN COMPOSITION FOR A COLOR FILTER AND USES THEREOF - The invention relates to a blue photosensitive resin composition, and it has the advantage of good developing-resistance, good ageing stability of sensitivity and good contrast. The invention also provides a method for producing a color filter, a color filter and a liquid crystal display device. | 11-27-2014 |
20150041735 | PHOTOSENSITIVE RESIN COMPOSITION AND USES THEREOF - The invention relates to a photosensitive resin composition that has the advantages of high developability, good hardness, and good sputtered resistance. The invention also provides a method for manufacturing a color filter, color filter and a liquid crystal display device. The photosensitive resin composition comprises an alkali-soluble resin (A), a compound containing an ethylenically unsaturated group (B), a photoinitiator (C), an organic solvent (D), a pigment (E), and a compound (F). | 02-12-2015 |
20150042931 | BLUE PHOTOSENSITIVE RESIN COMPOSITION FOR COLOR FILTER AND USES THEREOF - The invention relates to a blue photosensitive resin composition that has the advantages of good developing-resistance, good ageing stability of sensitivity and good contrast. The invention also provides a method for manufacturing a color filter, a color filter and a liquid crystal display device. | 02-12-2015 |
Patent application number | Description | Published |
20080203691 | Scooter Having An Anti-Skid Brake Device - A scooter having an anti-skid brake device includes a rear wheel hood. The rear wheel hood is provided with a brake section on the inner surface, an anti-skid section on the outer surface and a torsion spring to enhance the brake effect as well as to prevent skid when stepping on the rear wheel hood to stop the movement. | 08-28-2008 |
20090108642 | Adjustable bicycle seat assembly - An adjustable bicycle seat assembly includes an adjusting unit which includes a top end member connected to the seat post and an adjusting tube is connected to a lower end of the top end member. An inner space is defined in the adjusting tube and an outer space is defined between the adjusting tube and the seat post. A path is defined between the adjusting tube and the top end member so as to communicate with the inner space and the outer space. An axle is movably received in the path and removably seals the path. An anti-rotation device is located between the seat post and the seat tube so as to prevent the seat post from rotating relative to the seat tube. | 04-30-2009 |
20100320815 | Seat Adjustment Device for Bike - A seat adjustment device for a bike includes a holding base adapted to be engaged on a top of a support tube for a seat. First and second clamp blocks are received in the holding base. The second clamp block is moveable relative to the first clamp block. A bar-clamping space is formed between the first and second clamp blocks to clamp a support rod for the seat. An resilient member is provided between the first and second clamp blocks to bias the first and second clamp blocks towards an inner wall of the holding base. The first and second clamp blocks may be free to pivot around in the holding base, allowing the seat to be adjusted at a significantly increasing angle. | 12-23-2010 |
20110260510 | BICYCLE SEAT WITH SHOCK ABSORBING DEVICE - A bicycle seat includes two parts and a spring member is connected between the two respective rear ends of the first and second parts. A first fixing member is fixed to an underside of the spring member. A second fixing member is connected across the two respective front ends of the first and second parts respectively. A frame includes a closed end, a first distal end and a second distal end, the closed end is inserted into the reception recess of the second fixing member. The two distal ends of the frame are connected to the two ends of the first fixing member. The two parts are individually deformed when the cyclist changes his/her poses. | 10-27-2011 |
20120104221 | SEAT ADJUSTABLE ASSEMBLY - A bicycle seat adjustable assembly includes a fixing member connected to a seat and a lever is pivotably connected to the fixing member. An outer tube is connected between a bicycle frame and an inner tube is located in the outer tube. The inner tube is connected to the fixing member. A cylinder is located between the outer tube and the inner tube. The inner tube is connected to the fixing member. A piston rod of the cylinder is connected to the fixing member and is operated by the lever. The cylinder has an end fixed to the outer tube. A sleeve is located at the bottom end of the inner tube, and another sleeve is located between the inner tube and a reception portion of the outer tube so as to guide and the cylinder and the inner tube. | 05-03-2012 |
20120104727 | BICYCLE SEAT ADJUSTABLE DEVICE - A bicycle seat adjustable device includes an outer tube with an inner tube movably inserted therein and a piston is connected to the inner tube. A valve control device includes an outer path tube in the inner tube, and a lower end of the outer path tube is connected to the piston and a top end of the outer path tube extends toward the inner tube. A movable piston is movably mounted to the outer path tube. An outer oil room and an inner air room are defined between the inner tube and the outer path tube. A valve unit is connected to the inner path tube to form an inner oil room and a path which communicates with the outer oil room and the inner oil room, and controlled by the valve unit. The inner tube and the inner path tube increases the travel distance of the hydraulic oil. | 05-03-2012 |
20120104809 | CONTROL DEVICE FOR ADJUSTABLE BICYCLE SEAT - A bicycle seat adjustable device includes an outer tube and an inner tube inserted into the outer tube. A piston seat and a clamp unit are connected to the inner tube. A valve unit extends through the piston seat and is located in the inner tube. The valve unit includes a rod extending through the piston seat and reaches the bottom end of the outer tube. A control unit has a control unit connected to the bottom end of the outer tube and an action unit is located outside of the outer tube. The control unit has a push member connected with the rod. The action unit has a cable extending through the outer tube and connected to the push member. A switch is connected to the cable. The push member is indirectly moved to move the rod to control the hydraulic path in the piston seat by pulling the cable. | 05-03-2012 |
20120160623 | CYLINDER ASSEMBLY - A cylinder assembly includes a piston rod connected to a piston which is movably received in a cylinder and the interior of the cylinder is defined into a first room and a second room by the piston. A first groove and a second groove are respectively defined in the inside and the outside of the piston, and the two grooves are longitudinally aligned with each other. Two seal rings are respectively engaged with the first and second grooves. The first groove includes a first inner surface and the second groove includes a second inner surface. A distance is defined between two respective extension lines of the first and second grooves. Each of the two respective extension lines is defined by extending a line from the first/second inner surface of the first/second groove. The outer diameter of the piston is reduced for being used with a smaller cylinder. | 06-28-2012 |
Patent application number | Description | Published |
20130294713 | MOVABLE MEMBER FOR LINEAR SLIDE ASSEMBLY - A movable member of a linear slide assembly includes a slide member having two legs to mount the slide member to a rail. Two covers are respectively connected to two ends of the slide member. A track is formed between the legs of the slide member and the rail. Rolling members are installed in the circulation path of the slide assembly and drive the movable member along the rail back and forth. Two reinforcement plates are respectively connected to outside of the two covers and each reinforcement plate has a side plate and two bent extensions which are fixed to the legs of the slide member. The bent extensions each have an engaging portion which is engaged with the protrusion on the slide member. The engaging portions bear axial force applied to the rolling members to secure the connection between the covers and the slide member. | 11-07-2013 |
20130305852 | ROLLER MAINTAINING CHAIN AND METHOD FOR MAKING ROLLER MAINTAINING CHAIN AND LINEAR MOVEMENT DEVICE - A roller maintaining chain includes an elongate strip having multiple holes separated by separation blocks. Each hole has a hole face perpendicular to the elongate strip. Each separation block has a top separation block and a bottom separation block. Each of the top and bottom separation blocks has an accommodating surface which has a flat surface and an inclined stop surface. A part of each accommodating surface is perpendicular to planes on the axial direction of the elongate strip. The flat surfaces of the top and bottom separation blocks are smoothly connected to each other. The inclined stop surfaces are inclined toward the top direction of the holes to maintain the rollers in the holes. The method for making the roller maintaining chain uses a left mold and a right mold, the two molds are split inclinedly and laterally to obtain the roller maintaining chain. | 11-21-2013 |
20130315515 | CIRCULATION MAINTAINING DEVICE FOR LINEAR SLIDE ASSEMBLY - A circulation maintaining device for a linear slide assembly includes two top boards, four half mediate plates, two third half tubes, two bottom boards, and two end caps. Each of the above mentioned parts is manufactured integrally by way of injection molding and needs only one set of molds. These parts are connected to the slider symmetrically. Each of the half mediate tubes provides a second half tube and a half mediate plate. The second half tubes are inserted into the top holes and the bottom holes from two ends of the slider. The two half maintaining plates each have stops and recessed areas in longitudinal direction thereof so as to form restriction in transverse direction. The half maintaining plats each have ribs which are engaged with the grooves in the slider to provide positioning effect in a vertical direction. | 11-28-2013 |
20140060996 | CHAIN FOR ROLLING ELEMENTS - A chain for rolling elements includes a carrier belt having first and second side strip on two sides thereof, and multiple holes are defined in the carrier belt and located between the first and second side strips. Each hole has a first opening end and a second opening end. Multiple retainers are connected to the carrier belt and located alternatively with respect to the holes. Multiple first ribs are connected between the first side strip and the retainer. Multiple second ribs are connected between the second side strip and the retainer. Each of the first and second side strips has a thickness T | 03-06-2014 |
20140152124 | COIL UNIT AND COIL ASSEMBLY FOR IRON-LESS LINEAR MOTOR - A coil unit and coil assembly for iron-less liar motor and the coil unit includes two vertical function sides and two axial non-function sides. The multiple units are alternatively connected to each other by inserting the vertical function side of one coil unit into the hollow portion of the adjacent coil unit so as to form a coil assembly. The width of the vertical function side is D1 and the distance between two respective insides of the two vertical function sides is D2. D2=m×D1+ΔL, wherein m representing the number of the vertical function sides of other coil units received in the vertical direction of the hollow portion. The ΔL is the width of the gap which receives a separation plate between the two adjacent vertical function sides to increase the efficiency of dissipating heat or insulation when current passes through the coil assembly. | 06-05-2014 |
20140161379 | ENDLESS CIRCULATION PATH FOR LINEAR RAIL - An endless circulation path for a linear rail includes a loaded path, an unloaded path and two direction change paths which are connected between the loaded path and the unloaded path. Each of the unloaded path, the direction change paths and the loaded path has top and bottom grooves. A first line is connected between top and bottom grooves of the unloaded path. A second line is connected between the top and bottom grooves of each of the direction change paths. A slope of the second line, starting from the intersection between the direction change path and the unloaded path to the intersection between the direction change path and the loaded path, is gradually inclined relative to the first line. A third line is connected between the top and bottom groove of the loaded path. The third line is inclined relative to the first line. | 06-12-2014 |
20140177986 | ROLLER RETAINING CHAIN - A roller retaining chain includes a carrier belt extending along a longitudinal direction and multiple holes are defined through the carrier belt so as to respectively receive a roller therein. A retainer is located between any two adjacent holes and each of the retainers includes a first part and a bottom part. The first/second part has a first/second face facing the hole. Each of the first and second faces has a guide member and each guide member has a guide face which is perpendicular to the longitudinal direction. The two respective guide faces are located on the same plane. Each of the guide faces has an inclined stop face extending therefrom so as to retain the roller in the hole. Each roller is in contact with the two guide faces to prevent from being tilt. | 06-26-2014 |
20140199133 | BOLT-HOLE CAP FOR BOLT HOLE IN LINEAR RAIL - A bolt-hole cap for sealing the bolt hole of a rail includes a top face and a bottom face from which multiple protrusions extend. Each protrusion extends radially from inner portion toward outer portion of the bolt-hole cap. Each protrusion has two side faces and an end face connected between the two side faces. The end face has a first width. When the bolt-hole cap is inserted into a bolt hole and the top face of the bolt-hole cap is in flush with the top face of the rail, the end face of each of the protrusions contacts the bolt in the bolt hole. The protrusions are plastically deformed toward the side faces and the end face has a second width which is wider than the first width, so that the bolt-hole cap has sufficient strength to keep the top thereof flushing the top of the rail. | 07-17-2014 |
20140376838 | SLIDER ASSEMBLY - A slider assembly configured to move on a slide rail along an axial direction without limitation in distance is provided to solve the problems of the middle retaining members of a conventional circulation maintaining device, e.g., insufficient connection rigidity and inconvenience in manufacture and assembly. The positioning portion of a middle retaining member and the positioning portion of the protrusion of a slider are connected in a direction perpendicular to both the axial direction and a transverse direction in which the protrusion projects, thereby connecting the middle retaining member and the protrusion securely and evenly along their entire lengths. The middle retaining member and the protrusion also feature ease of manufacture and assembly. | 12-25-2014 |
Patent application number | Description | Published |
20100175709 | HAIR RING - A hair ring includes an arcuate body having a plurality of bendable sections and a plurality of spaced sections. Each bendable portion is intermediate two of the spaced sections adjacent to each other and has a thickness smaller than that of the spaced sections. The body further includes two ends each having a string coupling portion. A string is coupled to the string coupling portions. When the hair ring is worn on a head of a user, the body is bendable at the bendable portions according to an outline of the head of the user, and the string holds the hair at a rear of the head of the user. | 07-15-2010 |
20100175710 | HAIR CLIP - A hair clip includes first and second coupling members. An engaging member and a guide member are provided on an inner face of the second clamping member. A spacing between the guide member and the first section of the engaging member is equal to a width of a coupling portion on an end of the first clamping member. The guide member includes an inclined surface having increasing spacings to the engaging member toward a top of the guide member. When the first clamping member is moved to a closed position, a lateral side of the coupling portion abuts against and slides along the inclined surface into a space defined by the engaging member, and the coupling portion is received between the engaging member and the guide member. | 07-15-2010 |
20100319722 | HAIR PIN - A hair pin has an integral clip body. The clip body includes an outer frame and an inner clip. The outer frame has a first end and a second end with a gap, and a space connected to the gap. The inner clip has a first end with a bent portion and a second end with a gap, and a space connected to the gap. The second end of the inner clip is linked to bottom sides of the second end of the outer frame. By releasing the downwards pressed inner clip, hairs will be clipped between the inner clip and the outer frame by a restoring force of the clip body. | 12-23-2010 |
20100326458 | Hair Ornament - A hair ornament includes a body having an enveloping section for enveloping a portion of hair of a user. The enveloping section includes upper and lower ends spaced in a direction. The portion of the hair of the user extends through the upper and lower ends of the enveloping section. A styling section is mounted to the body. The styling section includes a plurality of tines extending in the direction. The tines of the styling section initially not extend through the hair of the user when the body is worn on the hair of the user. The body is movable relative to the hair of the user so that the tines of the styling section extend through another portion of the hair not enveloped by the enveloping section to position the body on the hair of the user. | 12-30-2010 |
20100326460 | Plastic hair clip - The present invention provides a plastic hairclip features in enabling to open and close by plastic resilience intrinsically. The plastic hairclip comprises a mount retainer, a lever retainer with a pair of releasing tabs, a hinged pivotal root and a pair of open-able jaws, which functions to accommodate, hold and release a hair bundle by intrinsic plastic resilience thereof. The plastic hairclip is made of a polymerized plastic mixture by 55% of 1,4-cyclohexanedimethanol (CHDM), 30% of ethylene glycol (EG), 10% of phosphotungstic acid (PTA), 1% of optical brightener and 4% of polypropylene (PP) or K-resin with 5% tolerance for each individual component respectively. Thereby, the plastic hairclip product features in good malleability, re-plasticization ability and tenacity as well as good artistic effect in shining brightness and eco-friendly effect. | 12-30-2010 |
20110000499 | HEIGHT ADJUSTABLE HAIR ARRANGEMENT ASSEMBLY - A height adjustable hair arrangement assembly comprises a clamping seat formed with respective hair combs; an upper side of the clamping seat being installed with a supporting block; an inner side of the supporting block being formed as a hollow receiving space; each of a right and a left side of the supporting block being formed with a penetrating adjusting portion; the adjusting portion being formed as a moving space; an adjusting seat being a cambered sheet; an upper surface of the adjusting seat being formed with teeth; a lower side of the adjusting portion being formed with two extension bodies; each of the extension body being formed with two buckling noses, one at a front side and another one at a rear side. In assembly, the buckling noses are pressed into lower sides of the moving spaces of the adjusting portion through the inclined notches. | 01-06-2011 |
20110023904 | RESILIENT HAIR CLIP - The present invention provides a resilient hair clip that is basically an integral elastic hair clip body made of soft and tenacious material with features of relatively simpler structure and easier manipulation than that of conventional resilient hair clip. | 02-03-2011 |
20110186073 | Hair Ornament - A hair ornament includes a first body having an inner layer and an outer layer. The inner layer includes a lump. The outer layer covers the lump and includes a bottom face and a top face. A first hook or loop fastener is provided on the top face, and a second hook or loop fastener is provided on the bottom face. The hair ornament is mounted in hair of a user and placed between upper and lower portions of the hair. The first hook or loop fastener engages with the upper portion of the hair, and the second hook or loop fastener engages with the lower portion of the hair. | 08-04-2011 |
20110297178 | HAIR ORNAMENT - A hair ornament includes a body having an engagement section to be in contact with hair of a user. The engagement section includes a row of plates arranged along a length direction of the body. Two of the row of plates adjacent to each other are connected by a connecting member having first and second ends. The first end of each connecting member is pivotably connected to one of two adjacent plates. The second end of each connecting member is pivotably connected to the other of the two adjacent plates. A spacing between two adjacent plates is adjustable by pivoting the two adjacent plates to adjust an overall length of the body in the length direction of the body. | 12-08-2011 |
20120042895 | Hair Holder - A hair holder includes an engaging member having inner and outer surfaces spaced in a thickness direction. The engaging member further includes a pin extending from the inner surface thereof in the thickness direction and can be inserted into a hair tuft of a user. The engaging member further includes an engaging portion formed on the inner surface thereof and spaced from the pin. A circular elastic band is extended through the engaging portion of the engaging member and adapted for encircling and holding the hair tuft. An ornament is attached to the outer surface of the engaging member for decorative purposes. | 02-23-2012 |
20120090635 | Hair Styling Band - A hair styling band includes a hair band body adapted to be worn on a head of a user to keep the hair of the user in place. The hair styling band further includes a C-shaped support member having first and second ends defining an opening. The first and second ends of the support member are pivotally combined to two legs of the hair band body so that the support member can be pivoted relative to the hair band body. When the hair band body is worn on the head of the user, the user can, according to the need, move the support member to a proper position above the head so that an upper layer hair of the user can cover on the support member to create a hairstyle of increased hair volume, achieving the effects of styling the hair and adjusting the hairstyle height. | 04-19-2012 |
20120186602 | Hair Clip with Hidden Spring - The present invention relates to a hair clip with a hidden spring. The hair clip includes two clamp bodies pivotally joined by a shaft rod. A spring is mounted around the shaft rod to bias two claw clamp portions of the two clamp bodies into a closed position for clipping hair of a user. The spring is hidden inside a connecting base formed on one of the clamp bodies, and therefore the hair clip appearance and safety in use is improved. | 07-26-2012 |
20120211021 | Hairstyling Device - A hairstyling device includes a flexible hollow main body having meshes or cellular through-holes and a central hole that penetrates through a center of the main body. The main body further includes first and second ends. The first end and/or the second end of the main body can be wound towards the central hole to form a ring-shaped hair tie, wherein the central hole allows insertion of a hair of a user. The hairstyling device can be placed on the hair of the user as a hair volumizer. Further, the through-holes of the main body allow insertion of different hairpins to create various hairstyles. | 08-23-2012 |
20120234344 | Hair Elastic - The present invention provides a hair elastic used as a hair band or a hair fastener. The hair elastic includes an endless ring integrally formed by flexible material. The ring includes inner and outer surfaces opposed in a thickness direction. The hair elastic further includes a plurality of minute protrusions uniformly disposed on the inner and outer surfaces of the ring. The plurality of minute protrusions on the inner and outer surfaces is in a point-contact mode with a hair of a user so that the hair elastic is capable of being comfortably fastened to a head of the user and has low resistance during removal. | 09-20-2012 |
20140373861 | HAIR COMB - Disclosed is a hair comb capable of reducing the resistance and improving the smoothness of combing hair, and the hair comb includes a slab-shaped main body, a plurality of parallel slash-shaped teeth implant areas disposed on a surface of the main body, a plurality of serial comb teeth sequentially implanted in the teeth implant areas and disposed opposite to the slash-shaped teeth implant areas respectively, a vacant area without any implanted tooth and disposed on a surface of the main body and the width of the vacant area falling between the serial comb teeth is greater than the distance between two adjacent comb teeth to achieve the effects of reducing the resistance of combining hair by the hair comb and the occurrence of tangled hair and providing a smooth combing operation. | 12-25-2014 |
Patent application number | Description | Published |
20130034929 | Method for Forming CMOS Image Sensors - A method includes forming a blocking layer over a substrate, and etching the blocking layer to form a trench in the blocking layer. A dielectric layer is formed, wherein the dielectric layer comprises a first portion over the blocking layer, and a second portion in the trench. After the step of forming the dielectric layer, an implantation is performed to implant an impurity into the substrate to form a deep well region. After the implantation, the dielectric layer and the blocking layer are removed. | 02-07-2013 |
20130037890 | MULTIPLE GATE DIELECTRIC STRUCTURES AND METHODS OF FORMING THE SAME - The present disclosure provides for multiple gate dielectric semiconductor structures and methods of forming such structures. In one embodiment, a method of forming a semiconductor structure includes providing a substrate including a pixel array region, an input/output (I/O) region, and a core region. The method further includes forming a first gate dielectric layer over the pixel array region, forming a second gate dielectric layer over the I/O region, and forming a third gate dielectric layer over the core region, wherein the first gate dielectric layer, the second gate dielectric layer, and the third gate dielectric layer are each formed to be comprised of a different material and to have a different thickness. | 02-14-2013 |
20140061737 | Isolation for Semiconductor Devices - A system and method for isolating semiconductor devices is provided. An embodiment comprises an isolation region that is laterally removed from source/drain regions of semiconductor devices and has a dielectric material extending over the isolation implant between the source/drain regions. The isolation region may be formed by forming an opening through a layer over the substrate, depositing a dielectric material along the sidewalls of the opening, implanting ions into the substrate after the deposition, and filling the opening with another dielectric material. | 03-06-2014 |
20140091375 | Implant Isolated Devices and Method for Forming the Same - A device includes a semiconductor substrate and implant isolation region extending from a top surface of the semiconductor substrate into the semiconductor substrate surrounding an active region. A gate dielectric is disposed over an active region of the semiconductor substrate and extends over the implant isolation region. A gate electrode is disposed over the gate dielectric and two end cap hardmasks are between the gate dielectric and the gate electrode over the implant isolation region. The two end cap hardmasks include same dopants as those implanted into the active region. | 04-03-2014 |
20140091377 | Implant Isolated Devices and Method for Forming the Same - A device includes a semiconductor substrate and implant isolation region extending from a top surface of the semiconductor substrate into the semiconductor substrate surrounding an active region. A gate dielectric is disposed over an active region of the semiconductor substrate, wherein the gate dielectric extends over the implant isolation region. A gate electrode is disposed over the gate dielectric and an end cap dielectric layer is between the gate dielectric and the gate electrode over the implant isolation region. | 04-03-2014 |
20140264508 | Structure and Method for 3D Image Sensor - The present disclosure provides an embodiment of an image sensor structure that includes a first semiconductor substrate having a plurality of imaging sensors; a first interconnect structure formed on the first semiconductor substrate; a second semiconductor substrate having a logic circuit; a second interconnect structure formed on the second semiconductor substrate, wherein the first and the second semiconductor substrates are bonded together in a configuration that the first and second interconnect structures are sandwiched between the first and second semiconductor substrates; and a backside deep contact (BDCT) feature extended from the first interconnect structure to the second interconnect structure, thereby electrically coupling the logic circuit to the image sensors. | 09-18-2014 |
20140264683 | Imaging Sensor Structure and Method - The present disclosure provides an embodiment of a method for fabricating a three dimensional (3D) image sensor structure. The method includes providing to an image sensor substrate having image sensors formed therein and a first interconnect structure formed thereon, and a logic substrate having a logic circuit formed therein and a first interconnect structure formed thereon; bonding the logic substrate to the image sensor substrate in a configuration that the first and second interconnect structures are sandwiched between the logic substrate and the image sensor substrate; and forming a conductive feature extending from the logic substrate to the first interconnect structure, thereby electrically coupling the logic circuit to the image sensors. | 09-18-2014 |
20150028402 | PHOTODIODE GATE DIELECTRIC PROTECTION LAYER - The present disclosure relates to a method the present disclosure relates to an active pixel sensor having a gate dielectric protection layer that reduces damage to an underlying gate dielectric layer during fabrication, and an associated method of formation. In some embodiments, the active pixel sensor has a photodetector disposed within a semiconductor substrate. A transfer transistor having a first gate structure is located on a first gate dielectric layer disposed above the semiconductor substrate. A reset transistor having a second gate structure is located on the first gate dielectric layer. A gate dielectric protection layer is disposed onto the gate oxide at a position extending between the first gate structure and the second gate structure and over the photodetector. The gate dielectric protection layer protects the first gate dielectric layer from etching procedures during fabrication of the active pixel sensor. | 01-29-2015 |
Patent application number | Description | Published |
20090062005 | Method for adjusting sensing range and sensitivity and inertia interactive aparatus and system using thereof - The present invention provides an architecture of a method, apparatus and system for user adjusting the sensing range and sensitivity dynamically according to various user statuses so as to obtain an appropriate interactive effect regardless of different age group of users. In the present invention, a way of adjusting sensing range according to a switch signal, or a ratio for adjusting magnitude of a processed signal, or changing the threshold of the application program directly are illustrated as embodiments respectively for adjusting the sensing range and sensitivity dynamically. | 03-05-2009 |
20140016823 | METHOD OF VIRTUAL MAKEUP ACHIEVED BY FACIAL TRACKING - Method of applying virtual makeup and producing makeover effects to 3D face model driven by facial tracking in real-time includes the steps: capturing static or live facial images of a user; performing facial tracking of facial image, and obtaining tracking points on captured facial image; and producing makeover effects according to tracking points in real time. Virtual makeup can be applied using virtual makeup input tool such as a user's finger sliding over touch panel screen, mouse cursor or an object passing through makeup-allowed area. Makeup-allowed area for producing makeover effects is defined by extracting feature points from facial tracking points and dividing makeup-allowed area into segments and layers; and defining and storing parameters of makeup-allowed area. Virtual visual effects including color series, alpha blending, and/or superposition are capable of being applied. Makeover effect takes into account of lighting condition, facial posture rotation, face size scaling, and face translation, respectively. | 01-16-2014 |
20140022249 | METHOD OF 3D MODEL MORPHING DRIVEN BY FACIAL TRACKING AND ELECTRONIC DEVICE USING THE METHOD THE SAME - A method of 3D morphing driven by facial tracking is provided. First, a 3D model is loaded. After that, facial feature control points and boundary control points are picked up respectively. A configure file “A.config” including the facial feature control points and boundary control points data that are picked up corresponding to the 3D avatar is saved. Facial tracking algorithm is started, and then “A.config” is loaded. After that, controlled morphing of a 3D avatar by facial tracking based on “A.config” is performed in real time by a deformation method having control points. Meanwhile, teeth and tongue tracking of the real-time face image, and scaling, translation and rotation of the real-time 3D avatar image is also provided. In addition, a control point reassignment and reconfiguration method, and a pupil movement detection method is also provided in the method of 3D morphing driven by facial tracking. | 01-23-2014 |
20140085194 | IMAGE-BASED OBJECT TRACKING SYSTEM IN 3D SPACE USING CONTROLLER HAVING MULTIPLE COLOR CLUSTERS - Image-based object tracking system includes at least a controller with two or more color clusters, an input button, a processing unit with a camera, an object tracking algorithm and a display. Camera is configured to capture images of the controller, the processing unit is connected to display to display processed image contents, the controller is directly interacting with displayed processed image content. The controller can have two or three color clusters located on a side surface thereof and two color clusters having concentric circular areas located at a top surface thereof, the color of the first color cluster can be the same as or different from the color of the third color cluster. An object tracking method with or without scale calibration is also provided, which includes color learning and color relearning, image capturing, separating and splitting of the controller and the background, object pairing procedure steps on the controller. | 03-27-2014 |
Patent application number | Description | Published |
20100058864 | MULTI-AXIS CAPACITIVE ACCELEROMETER - A multi-axis capacitive accelerometer is disclosed. A first mass is disposed and held by an anchor supported by a substrate, wherein the first mass is asymmetrically suspended on the anchor by means of two cantilevers, so that the first mass rotates about a rotation axis, for sensing the acceleration in a first direction perpendicular to the substrate. A second mass is disposed in the first mass and suspended on the first mass by means of a set of springs to sense the acceleration in a second direction parallel to the substrate. Furthermore, a third mass can be disposed in the second mass, wherein the third mass is suspended on the second mass by means of another set of springs to sense the acceleration in a third direction. The first direction, the second direction and the third direction are mutually orthogonal to each other. | 03-11-2010 |
20100122579 | MULTI-AXIS CAPACITIVE ACCELEROMETER - A multi-axis accelerometer is consisted of a substrate with sensing electrodes and a structure layer. The structure layer includes anchor bases fixed on the substrate. A first proof mass is disposed over the substrate and has a first opening and a second opening symmetric to each other. The first proof mass is suspended to the anchor bases. Fixed sensing blocks are disposed on the substrate, and capacitors are formed between each fixed sensing block and the first proof mass for sensing acceleration along two in-plane directions. A second proof mass and a third proof mass are disposed in the first opening and the second opening and are asymmetrically suspended. Separate electrodes are disposed on the substrate and form two differential capacitors with the second proof mass and the third proof mass for sensing the out-of-plane acceleration. | 05-20-2010 |
20110154905 | CAPACITIVE SENSOR AND MANUFACTURING METHOD THEREOF - A capacitive sensor includes a substrate, at least one first electrode, at least one second electrode, a sensing device, at least one anchor base, at least one movable frame, and a plurality of spring members. The first and second electrodes are disposed on the substrate, and the anchor base surrounds the first and second electrodes and is disposed on the substrate. The movable frame surrounds the sensing device. Some of the spring members connect the movable frame and the sensing device, and the other spring members connect the movable frame and the anchor base. The sensing device and the first electrode are both sensing electrodes. The movable frame is disposed above the second electrode, and cooperates with the second electrode to act as a capacitive driver. | 06-30-2011 |
20120001276 | APPARATUS INTEGRATING MICROELECTROMECHANICAL SYSTEM DEVICE WITH CIRCUIT CHIP AND METHODS FOR FABRICATING THE SAME - One embodiment discloses an apparatus integrating a microelectromechanical system device with a circuit chip which comprises a circuit chip, a microelectromechanical system device, a sealing ring, and a lid. The circuit chip comprises a substrate and a plurality of metal bonding areas. The substrate has an active surface with electrical circuit area, and the metal bonding areas are disposed on the active surface and electrically connected to the electrical circuits. The microelectromechanical system device comprises a plurality of bases and at least one sensing element. The bases are connected to at least one of the metal bonding areas. The at least one sensing element is elastically connected to the bases. The sealing ring surrounds the bases, and is connected to at least one of the metal bonding areas. The lid is opposite to the active surface of the circuit chip, and is connected to the sealing ring to have a hermetic chamber which seals the sensing element and the active surface of the circuit chip. | 01-05-2012 |
20120154068 | CRYSTAL OSCILLATOR AND METHOD FOR MANUFACTURING THE SAME - A crystal oscillator includes a cover, a crystal blank and an Integrated Circuit (IC) chip. The cover has a surface, a cavity formed in the surface, a plurality of conductive contacts and a conductive sealing ring. The conductive contacts are disposed on the surface, and the conductive sealing ring is disposed on the surface and surrounds the conductive contacts. The IC chip is connected to the conductive contacts and the conductive sealing ring, and forms a hermetic chamber with the cover and the conductive sealing ring. The crystal blank is located in the hermetic chamber, and is electrically connected to the IC chip. Furthermore, a method for manufacturing a crystal oscillator is also provided. | 06-21-2012 |
20120160027 | MICRO-ELECTROMECHANICAL SYSTEM DEVICE HAVING ELECTRICAL INSULATING STRUCTURE AND MANUFACTURING METHODS - The disclosure relates to a micro-electromechanical system (MEMS) device having an electrical insulating structure. The MEMS device includes at least one moving part, at least one anchor, at least one spring and an insulating layer. The spring is connected to the anchor and to the moving part. The insulating layer is disposed in the moving part and the anchor. Each of the moving part and the anchor is divided into two conductive portions by the insulating layer. Whereby, the electrical signals of different moving parts are transmitted through the insulated electrical paths which are not electrically connected. | 06-28-2012 |
20120260747 | SENSING DEVICE AND MANUFACTURING METHOD THEREOF - A sensing device can be provided with sealed and open-type chambers in various conditions for accommodating different types of sensing structural components by stacking multiple substrates, wherein the condition of a sealed chamber depends on condition taken in substrate bonding process. Owing to sealing a channel of the sealed chamber by the substrate, superior sealing performance is achieved as compared to those adopting solder or sealing material, and thus the condition of the sealed chamber can be finely controlled. | 10-18-2012 |
20130099331 | STRUCTURE AND PROCESS FOR MICROELECTROMECHANICAL SYSTEM-BASED SENSOR - A structure and a process for a microelectromechanical system (MEMS)-based sensor are provided. The structure for a MEMS-based sensor includes a substrate chip. A first insulating layer covers a top surface of the substrate chip. A device layer is disposed on a top surface of the first insulating layer. The device layer includes a periphery region and a sensor component region. The periphery region and a sensor component region have an air trench therebetween. The component region includes an anchor component and a moveable component. A second insulating layer is disposed on a top surface of the device layer, bridging the periphery region and a portion of the anchor component. A conductive pattern is disposed on the second insulating layer, electrically connecting to the anchor component. | 04-25-2013 |
20130160544 | READING CIRCUIT OF GYROSCOPE - A reading circuit of a gyroscope is provided. The reading circuit includes a driving unit, a high pass filter, a signal processing unit, and a low pass filter. The driving unit generates a resonance signal for a resonator of the gyroscope and generates a demodulation signal for the signal processing unit. The signal processing unit provides a modulation signal to a Coriolis accelerometer of the gyroscope. An input terminal of the high pass filter receives an output signal of the Coriolis accelerometer. The signal processing unit processes and demodulates an output of the high pass filter according to the demodulation signal and outputs a demodulation result to the low pass filter. | 06-27-2013 |
20130167632 | MICROELECTROMECHANICAL SYSTEM DEVICE WITH ELECTRICAL INTERCONNECTIONS AND METHOD FOR FABRICATING THE SAME - A microelectromechanical system device including anchors and mass is provided. Electrical interconnections are formed on the mass by using a insulation layer of mass, an electrical insulation trench and conductive through hole. The electrical interconnections replace the cross-line structure without adding additional processing steps, thereby reducing the use of the conductive layer and the electrical insulation layer. A method for fabricating the microelectromechanical system device is also provided. | 07-04-2013 |
20130167635 | MICRO-ELECTRO-MECHANICAL-SYSTEM DEVICE WITH OSCILLATING ASSEMBLY - A micro-electro-mechanical-system (MEMS) device comprising two proof masses disposed in the first frame, such that the MEMS device with oscillating assemblies senses the angular velocity in the two axes, respectively. The MEMS device with oscillating assemblies further comprises a lever structure and two oscillating assemblies connecting at two opposite ends of the lever structure, such that the oscillating assemblies move in opposite directions synchronously. The MEMS device with oscillating assemblies further comprises a spring assembly connected between the proof mass and a movable electrode, restricting the proof mass to drive the movable electrode to only move in a specific direction. | 07-04-2013 |
20140175572 | MEMS DEVICE WITH MULTIPLE ELECTRODES AND FABRICATING METHOD THEREOF - A MEMS device with a first electrode, a second electrode and a third electrode is disclosed. These electrodes are disposed on a substrate in such a manner that (1) a pointing direction of the first electrode is in parallel with a normal direction of the substrate, (2) a pointing direction of the third electrode is perpendicular to the pointing direction of the first electrode, (3) the second electrode includes a sensing portion and a stationary portion, (4) the first electrode and the sensing portion are configured to define a sensing capacitor, and (5) the third electrode and the stationary portion are configured to define a reference capacitor. This arrangement facilitates the MEMS device such as a differential pressure sensor, differential barometer, differential microphone and decoupling capacitor to be miniaturized. | 06-26-2014 |
20140186987 | MANUFACTURING METHODS FOR MICRO-ELECTROMECHANICAL SYSTEM DEVICE HAVING ELECTRICAL INSULATING STRUCTURE - The disclosure relates to a micro-electromechanical system (MEMS) device having an electrical insulating structure. The MEMS device includes at least one moving part, at least one anchor, at least one spring and an insulating layer. The spring is connected to the anchor and to the moving part. The insulating layer is disposed in the moving part and the anchor. Each of the moving part and the anchor is divided into two conductive portions by the insulating layer. Whereby, the electrical signals of different moving parts are transmitted through the insulated electrical paths which are not electrically connected. | 07-03-2014 |
20140245832 | MICRO-ELECTRO MECHANICAL APPARATUS WITH INTERDIGITATED SPRING - A micro-electro mechanical apparatus with interdigitated spring including a substrate, at least one first mass, a movable electrode, a stationary electrode, an anchor and an interdigitated spring is provided. The movable electrode is disposed on the mass along an axial direction. The stationary electrode is disposed on the substrate along the axial direction, and the movable electrode and the stationary electrode have a critical gap there between. The interdigitated springs connects the mass and the anchor along the axial direction. The interdigitated spring includes first folded portions, first connecting portions, second folded portions, and second connecting portions. Each first folded portion includes two first spans and a first head portion. Each second folded portion includes two second spans and a second head portion. A width of the first span and a width of the second span are greater than the critical gap respectively. | 09-04-2014 |
20140248731 | APPARATUS INTEGRATING MICROELECTROMECHANICAL SYSTEM DEVICE WITH CIRCUIT CHIP AND METHODS FOR FABRICATING THE SAME - One embodiment discloses an apparatus integrating a microelectromechanical system device with a circuit chip which includes a circuit chip, a microelectromechanical system device, a sealing ring, and a lid. The circuit chip comprises a substrate and a plurality of metal bonding areas. The substrate has an active surface with electrical circuit area, and the metal bonding areas are disposed on the active surface and electrically connected to the electrical circuits. The microelectromechanical system device comprises a plurality of bases and at least one sensing element. The bases are connected to at least one of the metal bonding areas. The at least one sensing element is elastically connected to the bases. The sealing ring surrounds the bases, and is connected to at least one of the metal bonding areas. The lid is opposite to the active surface of the circuit chip, and is connected to the sealing ring to have a hermetic chamber which seals the sensing element and the active surface of the circuit chip. | 09-04-2014 |
20140284603 | COMPOSITE MICRO-ELECTRO-MECHANICAL-SYSTEM APPARATUS AND MANUFACTURING METHOD THEREOF - A MEMS apparatus comprising composite vibrating unit and the manufacturing method thereof are disclosed. The vibrating unit includes a stiffness element on which a first material is disposed. A second material being a conductive material is disposed on the first material and is extended to the stiffness element to remove electric charge on first material. When a temperature is changed, a variation direction of a Young's modulus of the first material is opposite to a variation direction of a Young's modulus of the stiffness element. The unique attributes above allow vibrating unit of the MEMS apparatus such as resonator and gyroscope to have stable resonance frequency against the change of temperature. | 09-25-2014 |