Patent application number | Description | Published |
20090085042 | Display device having thin film semiconductor device and manufacturing method of thin film semiconductor device - A display device having a thin film semiconductor device including a semiconductor thin film having first and second semiconductor regions formed each into a predetermined shape above an insulative substrate, a conductor fabricated into a predetermined shape to the semiconductor thin film and a dielectric film put between the semiconductor thin film and the conductor, in which the semiconductor thin film is a polycrystal thin film with the crystallization ratio thereof exceeding 90% and the difference of unevenness on the surface of the semiconductor thin film does not exceed 10 nm. | 04-02-2009 |
20090140233 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device having a large storage capacity and stabilized rewriting conditions in which a memory cell includes a nonvolatile recording material layer, a selector element and a semiconductor layer provided between the nonvolatile recording material layer and the selector element and having a thickness ranging from 5 to 200 nm. | 06-04-2009 |
20090189137 | NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - In a phase change memory, electric property of a diode used as a selection device is extremely important. However, since crystal grain boundaries are present in the film of a diode using polysilicon, it involves a problem that the off leak property varies greatly making it difficult to prevent erroneous reading. For overcoming the problem, the present invention provides a method of controlling the temperature profile of an amorphous silicon in the laser annealing for crystallizing and activating the amorphous silicon thereby controlling the crystal grain boundaries. According to the invention, variation in the electric property of the diode can be decreased and the yield of the phase-change memory can be improved. | 07-30-2009 |
20090267047 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - The present invention can promote the large capacity, high performance and high reliability of a semiconductor memory device by realizing high-performance of both the semiconductor device and a memory device when the semiconductor memory device is manufactured by stacking a memory device such as ReRAM or the phase change memory and the semiconductor device. After a polysilicon forming a selection device is deposited in an amorphous state at a low temperature, the crystallization of the polysilicon and the activation of impurities are briefly performed with heat treatment by laser annealing. When laser annealing is performed, the recording material located below the silicon subjected to the crystallization is completely covered with a metal film or with the metal film and an insulating film, thereby making it possible to suppress a temperature increase at the time of performing the annealing and to reduce the thermal load of the recording material. | 10-29-2009 |
20100182828 | SEMICONDUCTOR STORAGE DEVICE - There is provided a semiconductor storage device which is capable of further reducing a size of a memory cell, and increasing a storage capacity. Plural memory cells each including a transistor formed on a semiconductor substrate, and a variable resistive device having a resistance value changed by voltage supply and connected between source and drain terminals of the transistor are arranged longitudinally and in an array to configure a three-dimensional memory cell array. A memory cell structure has a double channel structure in which an inside of a switching transistor is filled with a variable resistance element, particularly, a phase change material. The switching transistor is turned off by application of a voltage to increase a channel resistance so that a current flows in the internal phase change material to operate the memory. | 07-22-2010 |
20110001191 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device which includes: a semiconductor layer formed over an insulating layer over a semiconductor substrate; a gate electrode disposed over the semiconductor layer through a gate insulator; a sidewall insulator formed along the gate insulating film and a sidewall of the gate electrode; a source/drain layer including an alloy layer whose bottom surface is in contact with the insulating layer; and an impurity-doped layer which is segregated in a self-aligned manner in an interface between the alloy layer and the semiconductor layer and has a face for junction with a channel region formed along a crystal orientation plane of the semiconductor layer. | 01-06-2011 |
20110297911 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A technique used for a semiconductor device formed by stacking multiple structural bodies each having a semiconductor device, for preventing generation of thermal load on a structural body at a lower layer which is caused by a laser used in a step of forming a structural body at an upper layer. In a phase-change memory including multiple stacked memory matrices, a metal film is disposed between a memory matrix at a lower layer and a memory matrix at an upper layer formed over the memory matrix at the lower layer, in which the laser used for forming the memory matrix is reflected at the metal film and prevented from transmitting the metal film, thereby preventing the phase-change material layer, etc. in the memory matrix at the lower layer from being directly heated excessively by the laser. | 12-08-2011 |
20120074368 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device having a diode and a transistor connected in series, which prevents carriers from going from the diode into the transistor, thereby reducing the possibility of transistor deterioration. A structure to annihilate carriers from the diode is provided between a channel layer of the transistor and a diode semiconductor layer of the diode where the carriers are generated. | 03-29-2012 |
20120149143 | Method for Manufacturing a Solar Cell - In the existent method for manufacturing a solar cell, manufacture of a solar cell having a quantum well having a crystalline well layer and capable of controlling the thickness of the well layer was difficult. A quantum well having an amorphous well layer, comprising a barrier layer and an amorphous well layer is formed and then the quantum well having the amorphous well layer is annealed thereby crystallizing the amorphous well layer to form a quantum well having a crystalline well layer. By applying energy density applied to the amorphous well layer at an energy density of 1.26 J/mm | 06-14-2012 |
20120211718 | SEMICONDUCTOR STORAGE DEVICE - There is provided a semiconductor storage device which is capable of further reducing a size of a memory cell, and increasing a storage capacity. Plural memory cells each including a transistor formed on a semiconductor substrate, and a variable resistive device having a resistance value changed by voltage supply and connected between source and drain terminals of the transistor are arranged longitudinally and in an array to configure a three-dimensional memory cell array. A memory cell structure has a double channel structure in which an inside of a switching transistor is filled with a variable resistance element, particularly, a phase change material. The switching transistor is turned off by application of a voltage to increase a channel resistance so that a current flows in the internal phase change material to operate the memory. | 08-23-2012 |
20120248399 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The semiconductor storage device has: a substrate; a first word line ( | 10-04-2012 |
20130228739 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - When a thin channel semiconductor layer formed on a side wall of a stacked film in which insulating films and gate electrodes are alternately stacked together is removed on the stacked film, a contact resistance between a vertical transistor including the channel semiconductor layer and the gate electrode, and a bit line formed on the stacked film is prevented from rising. As its means, a conductive layer electrically connected to the channel semiconductor layer is disposed immediately above the stacked film. | 09-05-2013 |
20130234101 | NON-VOLATILE MEMORY DEVICE AND PRODUCTION METHOD THEREOF - A vertical chain memory includes two-layer select transistors having first select transistors which are vertical transistors arranged in a matrix, and second select transistors which are vertical transistors formed on the respective first select transistors, and a plurality of memory cells connected in series on the two-layer select transistors. With this configuration, the adjacent select transistors are prevented from being selected by respective shared gates, the plurality of two-layer select transistors can be selected, independently, and a storage capacity of a non-volatile storage device is prevented from being reduced. | 09-12-2013 |
20130341729 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage. | 12-26-2013 |
20140103287 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed are a semiconductor storage device and a manufacturing method. The storage device has: a substrate; a first word line above the substrate; a first laminated body above the first word line and having N+1 first inter-gate insulating layers and N first semiconductor layers alternately laminated; a first bit line above the laminated body and extending in a direction that intersects the first word line; a first gate insulating layer on side surfaces of the first inter-gate insulating layers and the first semiconductor layers; a first channel layer on the side surface of the first gate insulating layer; and a first variable resistance material layer on the side surface of the first channel layer. The first variable resistance material layer is in a region where the first word line and the first bit line intersect. A polysilicon diode is used as a selection element. | 04-17-2014 |
20140361241 | SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The semiconductor storage device has: a substrate; a first word line ( | 12-11-2014 |
Patent application number | Description | Published |
20100238049 | COMMUNICATION SYSTEM - A communication system of the present invention is provided with a transmitting unit and a receiving unit. The transmitting unit is provided with: a transmitting device that performs transmission of signals of a predetermined frequency; and a transmission control device that, through the transmitting device, transmits a first signal containing predetermined information, and a second signal that contains identification information for identifying the receiving unit, to which this first signal is to be transmitted, and that requires, for analyzing this signal, an amount of processing less than that required for the first signal. The receiving unit is provided with: a receiving device that detects the presence or absence of a signal of the predetermined frequency and receives the signal of the predetermined frequency; and a reception control device that, in a case where this receiving device has detected the signal of the predetermined frequency, controls the receiving device to receive the signal of the predetermined frequency only during a first period of time, that determines whether or not the signal received by the receiving device contains the second signal, and that, in a case where this second signal is contained, controls the receiving device to receive the signal of the predetermined frequency only during a second period of time, which is longer than the first period of time. | 09-23-2010 |
20100295677 | ALARM DEVICE AND ALARM SYSTEM - An alarm device includes: a detection device which detects an occurrence of an abnormal condition within a monitoring area; a transmission device which transmits an alarm signal when the detection device detects the abnormal condition; and an output device which, after the transmission device has transmitted the alarm signal, outputs an alarm after a lapse of a predetermined time after the transmission. | 11-25-2010 |
20110032114 | Alarming Device - The alarming device of the present invention includes a battery power supply; a sensor section that outputs an anomaly detection signal in the case of detecting an anomaly; a alert section that outputs an anomaly alarm based on the anomaly detection signal; a reception circuit section that receives an event signal from another alarming device; a transmission circuit section that transmits an event signal to the other alarming device; an anomaly monitoring section that, when the sensor section has detected an anomaly, causes the alert section to output the anomaly alarm based on the anomaly detection signal and causes the transmission circuit section to transmit an event signal according to the anomaly of the alarming device to the other alarming device, and on the other hand, when the reception circuit section has received an event signal according to an anomaly of the other alarming device from the other alarming device, causes the alert section to output the anomaly alarm; and a communication control section that detects a predetermined event and performs communication control by adjusting the transmitting and receiving of an event signal by the transmission circuit section and the reception circuit section. | 02-10-2011 |
20120218099 | RELAY METHOD FOR ALARM SYSTEM AND ALARM DEVICE - The relay method for an alarm system of the present invention includes: a third process in which a reception intensity of the acknowledgement signal is measured when the source alarm device receives the acknowledgement signal, and in which, if there are one or more destination alarm devices that have not transmitted the acknowledgement signal among all of the destination alarm devices registered in advance, a destination alarm device that has the lowest reception intensity of the acknowledgement signal is assigned as a relay destination alarm device; and a fourth process in which an abnormality signal is relay-transmitted from the source alarm device, through the relay destination alarm device, to the destination alarm devices that are interconnected with the relay destination alarm device, and then, from the destination alarm device that has received the abnormality signal, a signal indicating that a sender thereof is the destination alarm device is outputted, and also an acknowledgement signal is transmitted to the source alarm device. In addition, when there are one or more all of the destination alarm devices which have not transmitted an acknowledgement signal to the source alarm device among all of the destination the alarm devices registered in advance, the third and fourth processes are repeated. | 08-30-2012 |
Patent application number | Description | Published |
20100070087 | AIR CONDITIONING SYSTEM - A remote controller includes a display part and an operation part. Since the display part switches plural kinds of specifications to display behavior and setting conditions of an air conditioner, plural kinds of specifications are prepared in the display part. From a central controller a communication part receives a command for air conditioning behavior of an air conditioner and switching of the display specification. The command includes packet for storing information which indicates switching of the display specification. As a result, the central controller can centrally and individually control both the air conditioning behavior of the air conditioner and switching of the display specification in the display part without operating the display part for each of the air conditioners from a distance. | 03-18-2010 |
20100121492 | AIR-CONDITIONING CONTROLLER - An air-conditioning controller is configured to receive an operation input for an air-conditioning apparatus capable of being set to a plurality of airflow direction settings. The air-conditioning controller includes a switching button, a determination unit and a display unit. The switching button is for switching between the airflow direction settings. The determination unit is configured to determine a currently selected airflow direction setting based on an operation input inputted via the switching button. The display unit is configured to simultaneously display an image and a character corresponding to the airflow direction setting determined to be currently selected by the determination unit. | 05-13-2010 |
20100325570 | AIR CONDITIONING CONTROLLER - An air conditioning controller includes a storage component, a data receiving component configured to receive set numeric data, a display component configured to display data, and a control component. The storage component has stored operation explanation data, relationship explanation data, and setting layout display data stored therein. The stored operation explanation data defines operations of functions executed in the air conditioner. The relationship explanation data defines relationships between explanations of operations of functions and values that are set. The setting display layout data includes setting display region data and explanation display region data. The control component is configured to cause the set numeric data that the data receiving component has received to be displayed in a setting display region while causing the operation explanation data and the relationship explanation data to be displayed in an explanation display region in accordance with the setting display layout data. | 12-23-2010 |
20100325580 | REMOTE CONTROL UNIT OF AIR CONDITIONING APPARATUS - A remote control unit of an air conditioning apparatus includes a display unit, a cursor-moving member, a confirmation member, and a controller. The display unit displays a menu and a cursor that indicates an item among a plurality of items inside the menu and is moved by the cursor-moving member when operated by a user. The confirmation member is configured to decide that the item is to be executed. The controller controls the display unit in response to the cursor-moving member or confirmation member being operated, and stores screen display modes displayed on the display unit. Upon receiving a predetermined input from the confirmation member, the controller causes items allowing selection of the display modes to be displayed on the menu. | 12-23-2010 |
Patent application number | Description | Published |
20110040931 | MEMORY CONTROL METHOD AND DEVICE, MEMORY ACCESS CONTROL METHOD, COMPUTER PROGRAM, AND RECORDING MEDIUM - To dramatically increase the number of times data can be written into a flash memory. | 02-17-2011 |
20110256453 | POSITIVE-ELECTRODE MATERIAL FOR LITHIUM SECONDARY BATTERY, SECONDARY BATTERY EMPLOYING THE SAME, AND PROCESS FOR PRODUCING POSITIVE-ELECTRODE MATERIAL FOR LITHIUM SECONDARY BATTERY - A subject for the invention is to provide a positive-electrode material, which has high capacity and high output and is inhibited from suffering a decrease in output with repetitions of charge and use. | 10-20-2011 |
20120208471 | WIRELESS COMMUNICATION TERMINAL, CONTROL METHOD THEREFOR, AND INFORMATION STORAGE MEDIUM - Provided is a wireless communication terminal that allows a wireless communication connection to be disconnected even when an application program that requires continuation of the communication connection is being executed. The wireless communication terminal transmits data to a communication target in response to a transmission processing request from an application execution section for executing the application program. The wireless communication terminal is configured to: establish the wireless communication connection to the communication target; disconnect, based on a given condition, the wireless communication connection to the communication target to cause a shift to a communication interrupted state; re-establish the wireless communication connection to the communication target when the transmission processing request is received in the communication interrupted state from the application execution section; and transmit, to the communication target, the data relating to the transmission processing request after the re-establishment of the wireless communication connection. | 08-16-2012 |
20140365627 | COMMUNICATION PROCESSING DEVICE, COMMUNICATION PROCESSING METHOD, AND PROGRAM - A communication processing device including: a storage section configured to store a policy table associating an identifier identifying a communication unit with an identifier of a policy applied to the communication unit and a priority; an obtaining section configured to refer to the policy table and obtain the identifier of the policy and the priority, the identifier of the policy and the priority being associated with the identifier of the communication unit, at a time of protocol processing of the communication unit; a policy applying section configured to group one or more communication units associated with an identifier of an identical policy, and apply the identical policy to the grouped one or more communication units; and a band control section configured to perform band control on a basis of the priority for each communication unit. | 12-11-2014 |
Patent application number | Description | Published |
20080257255 | CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME - The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a silver layer bonded to at least one face of the metallic layer, wherein the silver layer has a {100}<001> cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦9 degree. The textured metal substrate can be manufactured by subjecting the silver sheet containing 30 to 200 ppm oxygen by concentration to the orienting treatment of hot-working and heat-treating, and bonding the metal sheet with the oriented silver sheet by using a surface activated bonding process. | 10-23-2008 |
20080261059 | CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME - The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. A clad textured metal substrate for forming the epitaxial thin film thereon according to the present invention comprises a metallic layer and a nickel layer which is bonded to at least one face of the metallic layer, wherein the nickel layer has a {100}<001> cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦7 degrees and has a nickel purity of 99.9% or more. The oriented metal substrate is manufactured by cold-working the nickel sheet having a purity of 99.9% or more, heat-treating it for orientation, and bonding the metal sheet with the oriented nickel sheet by using a surface activated bonding process. | 10-23-2008 |
20080261072 | CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME - The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100}<001> cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The clad textured metal substrate for forming the epitaxial thin film thereon has an intermediate layer on the surface of the copper layer so as to form the epitaxial thin film thereon, wherein the above described intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum. | 10-23-2008 |
20080305322 | INTERLAYER OF TEXTURED SUBSTRATE FOR FORMING EPITAXIAL FILM, AND TEXTURED SUBSTRATE FOR FORMING EPITAXIAL FILM - Provided is a buffer layer of a textured substrate for forming an epitaxial film that permit the formation of an epitaxial film having a high texture. The present invention provides a buffer layer of a textured substrate for forming an epitaxial film that is provided between a base material and an epitaxial film formed on at least one surface of the base material, in which the buffer layer has a single layer structure or a multilayer structure of not less than two layers and a layer in contact with the substrate is formed from an indium tin oxide. This buffer layer can have a multilayer structure, and can be provided on the ITO layer, with at least one layer formed from nickel, nickel oxide, zirconium oxide, a rare earth oxide, magnesium oxide, strontium titanate (STO), strontium titanate-barium (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium, and platinum. | 12-11-2008 |
20090053550 | TEXTURED SUBSTRATE FOR EPITAXIAL FILM FORMATION AND SURFACE IMPROVING METHOD OF TEXTURED SUBSTRATE FOR EPITAXIAL FILM FORMATION - Orientation degree and smoothness of a substrate surface better than those of conventional ones are provided in a textured substrate for epitaxial thin film growth. The present invention is a textured substrate for epitaxial film formation, including a crystal orientation improving layer made of a metal thin film of 1 to 5000 nm in thickness on the surface of the textured substrate for epitaxial film formation having a textured metal layer at least on one surface, wherein differences between orientation degrees (Δφ and Δω) in the textured metal layer surface and orientation degrees (Δφ and Δω) in the crystal orientation improving layer surface are both 0.1 to 3.0°. Further, when another metal different from the metal constituting this textured substrate crystal orientation improving layer is added equivalent to a thin film which is 30 nm or less, and subsequently is subjected to heat treatment, the smoothness of that surface can be improved. At this time, the surface roughness of the substrate surface becomes 20 nm or less. | 02-26-2009 |
20110155050 | CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a oriented substrate for forming an epitaxial thin film thereon, having a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The clad textured metal substrate includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100}<001> cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The substrate has an intermediate layer on the surface of the copper layer, to form the epitaxial thin film thereon. | 06-30-2011 |
20120312429 | CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME - The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a silver layer bonded to at least one face of the metallic layer, wherein the silver layer has a {100}<001> cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦9 degree. The textured metal substrate can be manufactured by subjecting the silver sheet containing 30 to 200 ppm oxygen by concentration to the orienting treatment of hot-working and heat-treating, and bonding the metal sheet with the oriented silver sheet by using a surface activated bonding process. | 12-13-2012 |
Patent application number | Description | Published |
20100240177 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes, forming an isolation region defining a first region and a second region, injecting a first impurity of a first conductivity type into the first region and the second region, forming a first gate insulating film and a first gate electrode over the first region, forming a second gate insulating film and a second gate electrode over the second region, forming a first mask layer over a first portion of the second region to expose a second portion of the second region and the first region, and injecting a second impurity of the first conductivity type into the semiconductor substrate from a direction diagonal to a surface of the semiconductor substrate. | 09-23-2010 |
20110108917 | SEMICONDUCTOR DEVICE WITH HIGH VOLTAGE TRANSISTOR - A semiconductor device includes: a p-type active region; a gate electrode traversing the active region; an n-type LDD region having a first impurity concentration and formed from a drain side region to a region under the gate electrode; a p-type channel region having a second impurity concentration and formed from a source side region to a region under the gate electrode to form an overlap region with the LDD region under the gate electrode, the channel region being shallower than the LDD region; an n-type source region formed outside the gate electrode; and an n | 05-12-2011 |
20110133273 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device including a low-concentration impurity region formed on the drain side of an n-type MIS transistor, in a non-self-aligned manner with respect to an end portion of the gate electrode. A high-concentration impurity region is placed with a specific offset from the gate electrode and a sidewall insulating film. The semiconductor device enables the drain breakdown voltage to be sufficient and the on-resistance to decrease. A silicide layer is also formed on the surface of the gate electrode, thereby achieving gate resistance reduction and high frequency characteristics improvement. | 06-09-2011 |
20110221000 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes forming a first gate electrode on a semiconductor substrate in a first transistor region; forming a channel dose region; and forming a first source extension region, wherein the channel dose region is formed by using a first mask as a mask and by ion-implanting a first dopant of the first conductivity type, and the first mask covering a drain side of the first gate electrode and covering a drain region, and the first source extension region is formed by using a second mask and the gate electrode as masks and by ion-implanting a second dopant of a second conductivity type that is a conductivity type opposite to the first conductivity type, the second mask covering the drain side of the first gate electrode and covering the drain region. | 09-15-2011 |
20110233687 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device manufacturing method includes forming a channel dope layer having a first electric conductive-type inside of a semiconductor substrate, the channel dope layer being formed in a region except for a drain impurity region where dopant impurities for forming a low-concentration drain region are introduced, and the channel dope layer being separated from the drain impurity region; forming a gate electrode on the semiconductor substrate via a gate insulating film; and forming a low-concentration source region inside of the semiconductor substrate on a first side of the gate electrode, and forming a low-concentration drain region in the drain impurity region of the semiconductor substrate on a second side of the gate electrode, by introducing second electric conductive dopant impurities inside of the semiconductor substrate with the gate electrode as a mask. | 09-29-2011 |
20120132964 | SEMICONDUCTOR DEVICE - A semiconductor device includes a transistor array including a plurality of transistors each having a gate electrode extended in a first direction, the plurality of transistors being arranged in a second direction intersecting the first direction, and a pad electrode arranged in the first direction of the transistor array and electrically connected to source regions of the plurality of transistors. | 05-31-2012 |
20120208336 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes forming a first gate electrode on a semiconductor substrate in a first transistor region; forming a channel dose region; and forming a first source extension region, wherein the channel dose region is formed by using a first mask as a mask and by ion-implanting a first dopant of the first conductivity type, and the first mask covering a drain side of the first gate electrode and covering a drain region, and the first source extension region is formed by using a second mask and the gate electrode as masks and by ion-implanting a second dopant of a second conductivity type that is a conductivity type opposite to the first conductivity type, the second mask covering the drain side of the first gate electrode and covering the drain region. | 08-16-2012 |
20130178032 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes forming a first gate electrode on a semiconductor substrate in a first transistor region; forming a channel dose region; and forming a first source extension region, wherein the channel dose region is formed by using a first mask as a mask and by ion-implanting a first dopant of the first conductivity type, and the first mask covering a drain side of the first gate electrode and covering a drain region, and the first source extension region is formed by using a second mask and the gate electrode as masks and by ion-implanting a second dopant of a second conductivity type that is a conductivity type opposite to the first conductivity type, the second mask covering the drain side of the first gate electrode and covering the drain region. | 07-11-2013 |
20130178036 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes forming a first gate electrode on a semiconductor substrate in a first transistor region; forming a channel dose region; and forming a first source extension region, wherein the channel dose region is formed by using a first mask as a mask and by ion-implanting a first dopant of the first conductivity type, and the first mask covering a drain side of the first gate electrode and covering a drain region, and the first source extension region is formed by using a second mask and the gate electrode as masks and by ion-implanting a second dopant of a second conductivity type that is a conductivity type opposite to the first conductivity type, the second mask covering the drain side of the first gate electrode and covering the drain region. | 07-11-2013 |
20130189820 | SEMICONDUCTOR DEVICE WITH HIGH VOLTAGE TRANSISTOR - A method for manufacturing a semiconductor includes:
| 07-25-2013 |
20130241005 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes first, second and isolation regions; a first insulating film and gate electrode formed over the first region; a second insulating film and gate electrode formed over the second region; a first sidewall formed on a side of the first gate electrode and a second sidewall formed on a side of the second gate electrode; first source and drain regions formed adjacent opposite sides of the first gate electrode; second source region adjacent to the one side of the first gate electrode and overlapping the first source region, an impurity concentration of the second source region being different from an impurity of the first source region; a second drain region overlapping the first drain region and overlapping the first gate electrode; and a metal silicide formed on the first source region and the first drain region. | 09-19-2013 |
20140004673 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | 01-02-2014 |
Patent application number | Description | Published |
20090174577 | Image recognition apparatuses, methods and programs - Image information apparatuses, methods, and programs acquire image information of a plurality of frames of images sensed at predetermined regular time intervals. The apparatuses, methods, and programs detect a leading and trailing end of a lane mark included in a detection area defined in each frame of the image information. The apparatuses, methods, and programs detect a detected distance from one of the leading and trailing end of the lane mark to the other one as a detected distance based on the speed of the vehicle and the number of frames between a frame in which one of the leading end and the trailing end of the lane mark is detected and a frame in which the other one of the leading end and the trailing end of the lane mark is detected and determine a lane mark type of the lane mark on the basis of the detected distance. | 07-09-2009 |
20100328427 | STEREO IMAGE PROCESSING DEVICE AND METHOD - In stereo matching based on standard area matching, in order to suppress a decrease in matching accuracy, it is effective to adaptively change a matching area in accordance with the local properties of an image. However, this requires high calculation costs. Thus, the present invention provides a stereo image processing apparatus including an image pickup unit | 12-30-2010 |
20110261168 | Camera Device - Provided is a camera device which is capable of estimating a road shape ahead of a target vehicle or capable of determining whether or not the target vehicle needs to be decelerated by controlling a brake before a curve, even in the situation where a white line of a traveling road or a roadside three-dimensional object is difficult to detect. A camera device 105 including a plurality of image capturing units 107 and 108 which each take an image of a traveling road ahead of a target vehicle 106, includes: a three-dimensional object ahead detection unit 114 which detects three-dimensional objects ahead 101 existing in a vicinity of a vanishing point of the traveling road 102 on the basis of the images picked up by the plurality of image capturing units 107 and 108; and a road shape estimation unit 113 which estimates a road shape of a distant portion on the traveling road 102 on the basis of a detection result detected by the three-dimensional object ahead detection unit 114. | 10-27-2011 |
20110267430 | Detection Device of Planar Area and Stereo Camera System - An object of the present invention is to provide a detection device of a planar area, which suppresses matching of luminance values in areas other than a planar area, and non-detection and erroneous detection of the planar area arising from an error in projection transform. | 11-03-2011 |
20120185167 | Road Shape Recognition Device - A road shape recognition device capable of accurately recognizing the road shape of a road that lies ahead in the travel direction of a vehicle is provided. A road shape recognition device | 07-19-2012 |
20120215377 | Vehicle Controller - A vehicle controller is provided capable of expanding an application range of departure prevention control while suppressing erroneous control. The vehicle controller includes: a vehicle-mounted camera | 08-23-2012 |
20120216208 | In-Car-Use Multi-Application Execution Device - An in-car-use multi-application execution device is provided that ensures safety while maintaining convenience by securing operation of a plurality of applications and suppressing occurrence of a termination process within a limited processing capacity without degrading a real-time feature. The in-car-use multi-application execution device dynamically predicts a processing time for each application, and schedules each application on the basis of the predicted processing time. If it is determined that an application failing to complete a process in a prescribed cycle exists as a result of the scheduling, a process is executed that terminates the application or degrades the function of the application on the basis of a preset priority order. | 08-23-2012 |
20120288154 | Road-Shoulder Detecting Device and Vehicle Using Road-Shoulder Detecting Device - Disclosed is a road-shoulder detecting device including a distance-information calculating portion for calculating the presence of a physical object and the distance from the subject vehicle to the object from input three-dimensional image information relating to an environment around the vehicle, a vehicular road surface detecting portion for detecting a vehicular road surface with the subject vehicle from a distance image, a height difference calculating portion for measuring height difference between the detected vehicular road and an off-road region, and a road shoulder decision portion for deciding height difference as to whether the road shoulder is boundary between the surface and the region in a case where there is an off-road region lower than the vehicular road surface. | 11-15-2012 |
20120327188 | Vehicle-Mounted Environment Recognition Apparatus and Vehicle-Mounted Environment Recognition System - A vehicle-mounted environment recognition apparatus including a simple pattern matching unit which extracts an object candidate from an image acquired from a vehicle-mounted image capturing apparatus by using a pattern shape stored in advance and outputs a position of the object candidate, an area change amount prediction unit which calculates a change amount prediction of the extracted object candidate on the basis of an object change amount prediction calculation method set differently for each area of a plurality of areas obtained by dividing the acquired image, detected vehicle behavior information, and an inputted position of the object candidate, and outputs a predicted position of an object, and a tracking unit which tracks the object on the basis of an inputted predicted position of the object. | 12-27-2012 |
20120327189 | Stereo Camera Apparatus - A stereo camera apparatus which carries out distance measuring stably and with high accuracy by making measuring distance resolution variable according to a distance to an object is provided. A stereo camera apparatus | 12-27-2012 |
20130027511 | Onboard Environment Recognition System - To provide an onboard environment recognition system capable of preventing, with a reduced processing load, erroneous recognition caused by light from a headlight of a vehicle in the surroundings. An onboard environment recognition system | 01-31-2013 |
20130033600 | Image Processing Device - An image processing device which performs a tracking control with respect to a moving object which is travelling forward, based on the controlled variable of the own vehicle includes, an image processing unit which specifies an area of a moving object from an input image, sets the specified area of the moving object as a reference image area after starting tracking control, and sets an area of the moving object after a predetermined time as a comparison image area; a comparison unit which compares the set reference image area and the comparison image area with each other, and calculates travelling information relating to the moving object; and a controlled variable calculation unit which calculates a controlled variable of the own vehicle from travelling information which is calculated in the comparison unit. | 02-07-2013 |
20130135474 | Automotive Camera System and Its Calibration Method and Calibration Program - Provided is a calibration method for an automotive camera system that can easily calibrate intrinsic parameters and extrinsic parameters of an image taking unit. A calibration method for an automotive camera system | 05-30-2013 |
20130147948 | IMAGE PROCESSING APPARATUS AND IMAGING APPARATUS USING THE SAME - It is possible to provide an image processing apparatus capable of carrying out calibration easily and precisely without requiring a special facility and provide an imaging apparatus making use of the image processing apparatus. The imaging apparatus comprises at least two cameras | 06-13-2013 |
20140118504 | CAMERA DEVICE WITH THREE-DIMENSIONAL OBJECT AHEAD DETECTION UNIT - Provided is a camera device capable of estimating a road shape ahead of a target vehicle or determining whether or not the target vehicle needs to be decelerated by controlling a brake before a curve, even in the situation where a white line of a traveling road or a roadside three-dimensional object is difficult to detect. A camera device | 05-01-2014 |
Patent application number | Description | Published |
20090013749 | HOT FORMING DIE, PRESS FORMING APPARATUS, AND HOT PRESS FORMING METHOD - A hot forming die according to an exemplary embodiment can be provided for a press forming apparatus which can press-forms a heated metal plate (e.g., a work material) and may cool the work material by ejecting a cooling medium onto the work material. The hot forming die can have a main supply path through which the cooling medium passes, a plurality of branch supply paths branching off the main supply path, injection ports for ejecting the cooling medium to the outside of the die, and nozzle members fixed on the ejection port side of the branch supply paths to restrict the passage amount of the cooling medium by using passage holes for allowing the cooling medium to pass there through. In a hot press forming method according to an exemplary embodiment, the cooling medium in the die can be held on standby after being pressurized to a degree at which the cooling medium is not ejected. The cooling medium according to an exemplary embodiment may be further pressurized to a pressure higher than the pressure at the standby time at predetermined timing during or after pressing and then is ejected onto the work material. | 01-15-2009 |
20110219843 | METAL PLATE MATERIAL HOT PRESS MOLDING APPARATUS AND HOT PRESS MOLDING METHOD - A metal plate material hot molding apparatus is provided for press molding a heated metal plate material. The apparatus may include supply piping for a cooling medium in a mold, and ejection holes penetrating from a molding surface of the mold to the supply piping. The exemplary apparatus may also include discharge piping for the cooling medium situated in the mold, and discharge holes penetrating from the molding surface of the mold to the discharge piping, and cooling piping. Molding procedure can be performed while the cooling medium is ejected from the ejection holes to a gap between the metal plate material and the mold. | 09-15-2011 |
20110219848 | METAL PLATE MATERIAL HOT PRESS MOLDING APPARATUS AND HOT PRESS MOLDING METHOD - A metal plate material hot molding apparatus is provided for press molding a heated metal plate material. The apparatus may include supply piping for a cooling medium in a mold, and ejection holes penetrating from a molding surface of the mold to the supply piping. The exemplary apparatus may also include discharge piping for the cooling medium situated in the mold, and discharge holes penetrating from the molding surface of the mold to the discharge piping, and cooling piping. Molding procedure can be performed while the cooling medium is ejected from the ejection holes to a gap between the metal plate material and the mold. | 09-15-2011 |
20110219849 | METAL PLATE MATERIAL HOT PRESS MOLDING APPARATUS AND HOT PRESS MOLDING METHOD - A metal plate material hot molding apparatus is provided for press molding a heated metal plate material. The apparatus may include supply piping for a cooling medium in a mold, and ejection holes penetrating from a molding surface of the mold to the supply piping. The exemplary apparatus may also include discharge piping for the cooling medium situated in the mold, and discharge holes penetrating from the molding surface of the mold to the discharge piping, and cooling piping. Molding procedure can be performed while the cooling medium is ejected from the ejection holes to a gap between the metal plate material and the mold. | 09-15-2011 |
Patent application number | Description | Published |
20080222330 | Semiconductor integrated circuit and image processing apparatus having the same - An ASIC includes a receiving unit, a transmission interface, a reception interface, a buffer, and a control unit. When the receiving unit receives a second write request while the transmission interface is in process of transmitting to a transmission line a first write request and write data, the control unit causes the receiving unit to store the second write request in the buffer. When the receiving unit receives a read request while the second write request is present in the buffer, the control unit causes the receiving unit to send the read request to the transmission interface prior to the second write request. | 09-11-2008 |
20110222111 | Data transfer device, image processing apparatus, and recording medium - A data transfer device includes a serial interface including plural transmission paths and carrying out a data transfer operation with plural operating frequencies, transfer requesting units issuing a data transfer request to the serial interface, a request monitoring unit, a condition setting unit setting a set transmission path condition including at least one of a number of the transmission paths and an operating frequency used when the data transfer requests are issued to switch statuses of the data transfer requests to statuses of switching data transfer requests, a use transmission path condition determining unit determining the set transmission path condition corresponding to the status of the switching data transfer request as a use transmission path condition when the status of switching data transfer request corresponds to the status of data transfer request by comparing the statuses, and a switching unit switching to the use transmission path condition. | 09-15-2011 |
20130019033 | DATA TRANSFER APPARATUS AND IMAGE FORMING SYSTEMAANM SHIMA; TomohiroAACI KanagawaAACO JPAAGP SHIMA; Tomohiro Kanagawa JP - A data transfer apparatus includes a virtual channel unit configured to time share a serial bus for a first virtual channel and a second virtual channel and include a buffering control unit configured to receive data via the first virtual channel and the second virtual channel, first and second receive buffers being configured to store the data received via the first virtual channel and the second virtual channel, respectively; and a switching unit configured to control storing the data received via the first virtual channel in the second receive buffer when the buffering control unit receives the data from another data transfer apparatus which is configured to use only the first virtual channel and the capacity of the first receive buffer is smaller than that of the second receive buffer. | 01-17-2013 |
Patent application number | Description | Published |
20080218626 | CAMERA UNIT FOR DRIVING LENSES AND METHOD OF MANUFACTURING THE SAME - A camera unit includes a soft substrate on which electrode regions and an image pickup device region are disposed, a driving electrode group disposed on one of the electrode regions, an image pickup device disposed on the image pickup device region, stationary unit frame attaching portions disposed at positions surrounding the image pickup device region, a stationary unit frame attached to the stationary unit frame attaching portions, and movable units disposed in the stationary unit frame. The soft substrate is bent along bending positions between the electrode regions and the image pickup device region, the electrode regions are fixed on sides of the stationary unit frame inwardly thereof, and the image pickup device region is fixed on an end surface of the stationary unit frame toward the movable units. | 09-11-2008 |
20090127768 | SHEET SEPARATING DEVICE AND METHOD FOR SEPARATING STACKED SHEETS - A sheet separating device includes: an air blowing unit that is configured to blow air toward a side face of stacked sheets being stacked with a plurality of sheets to separate the sheets by forming an air layer between the sheets; and a sheet pressing unit that is configured to apply a pressing force on the uppermost sheet in the stacked sheets while the uppermost sheet is separated from other sheets, the pressing force having a downward component and a component in a direction along the uppermost sheet. | 05-21-2009 |
20090184461 | SHEET CONVEYANCE DEVICE - A sheet conveyance device includes: a first conveyance member configured to convey a sheet in a first direction; a second conveyance member configured to convey the sheet in a second direction; a guide disposed between the first conveyance member and the second conveyance member, the guide having a curved face configured to guide the sheet conveyed from the first conveyance member to the second conveyance member; and an adjustment member disposed at an inner position of the curvature of the curved face of the guide, the adjustment member being configured to swing to contact with a curved inner face of the sheet guided by the guide in accordance with a contact force applied by the sheet. | 07-23-2009 |
Patent application number | Description | Published |
20090030163 | PROCESS FOR PRODUCING GLYCIDYL 2-HYDROXYISOBUTYRATE AND COMPOSITION CONTAINING THE PRODUCT - An efficient process for producing glycidyl 2-hydroxyisobutyrate useful as a reactive diluent is provided. When glycidyl 2-hydroxyisobutyrate is produced by reacting allyl 2-hydroxyisobutyrate with hydrogen peroxide, a solution in which allyl 2-hydroxyisobutyrate is dissolved in an aliphatic ester as a solvent is reacted with hydrogen peroxide in the presence of a crystalline titanosilicate catalyst. Thus, a production process of glycidyl 2-hydroxyisobutyrate, which is small in degradation of purity and yield due to generation of peroxides or the like, and products thereof are provided. | 01-29-2009 |
20090036301 | Process for Producing Catalyst for Cyanhydrin Hydration and Product of the Process - A process for producing a catalyst for cyanhydrin hydration, which comprises a manganese oxide as a main component and is excellent in both physical strength and reaction activity, is provided, as well as a catalyst for cyanhydrin hydration obtained by the production process. Specifically, a process for producing a catalyst which is useful for cyanhydrin hydration and contains a manganese oxide as a main component, potassium, and one or more elements selected from the group consisting of bismuth, vanadium and tin, in which the above compounds are mixed together in an aqueous system; the resulting slurry precipitate is subjected to solid-liquid separation; and the resulting hydrous cake is dried in at least two separate stages comprising a predrying and a main drying, is provided, as well as a catalyst for cyanhydrin hydration obtained by the production process. | 02-05-2009 |
20110269912 | PROCESS FOR PRODUCTION OF NUCLEUS-HYDROGENATED AROMATIC VINYL/(METH)ACRYLATE COPOLYMERS - A safe and stable production method of a hydrogenated polymer having high transparency, which is a production method of a hydrogenated polymer by hydrogenating aromatic rings of an aromatic vinyl compound-(meth)acrylate copolymer, in which (1) a solvent solution of the copolymer is added to a reactor, which has a solvent and a supported palladium catalyst charged therein, under a hydrogen atmosphere at a rate of from 0.01 to 15 g/hour in terms of the copolymer per unit mass (g) of the supported palladium catalyst, thereby performing hydrogenation reaction, and then such an operation is performed repeatedly that (2) a hydrogenated polymer is obtained from 30 to 90% by mass of the resulting reaction mixed solution, and a fresh solvent solution of the copolymer is added to the reactor, in which the residual reaction mixed solution is left, or to which the residual reaction mixed solution is returned, at a rate of from 0.01 to 15 g/hour in terms of the copolymer per unit mass (g) of the supported palladium catalyst, thereby performing hydrogenation reaction. | 11-03-2011 |
20120095253 | METHOD FOR PRODUCING ALPHA-HYDROXYCARBOXYLIC ACID ESTER - Provided is a process for producing α-hydroxycarboxylic esters from α-hydroxycarboxylic amides and aliphatic alcohols, wherein it is a production process which is inhibited in a production cost and enhanced in a conversion rate and a selectivity and which is industrially advantageous. To be specific, it is a production process for α-hydroxycarboxylic ester characterized by subjecting α-hydroxycarboxylic amide and aliphatic alcohol to a gas phase reaction in the presence of a zirconium dioxide catalyst. A catalyst lifetime is improved to a large extent by using a zirconium dioxide catalyst containing a specific element. | 04-19-2012 |
20130041179 | AMIDE COMPOUND PRODUCTION CATALYST, AND PROCESS FOR PRODUCTION OF AMIDE COMPOUND - The present provides a high-efficiency amide compound production catalyst to be used in producing an amide compound through hydration of a nitrile compound and a production method using it. The amide compound production catalyst is for producing an amide compound through reaction of a nitrile compound and water, and comprises a manganese oxide catalyst containing bismuth and further containing yttrium or vanadium. The method for producing an amide compound comprises reacting a nitrile compound and water in a liquid phase in the presence of the amide compound production catalyst. | 02-14-2013 |
Patent application number | Description | Published |
20100295251 | CHROMIUM NITRIDE ION-PLATING COATING AND ITS PRODUCTION METHOD, AS WELL AS PISTON RING USED FOR INTERNAL COMBUSTION ENGINE - [Task] The chromium nitride ion-plating coating has a property that it is hard but is liable to peel off. Year by year, the required level of wear resistance and scuffing resistance becomes higher in a diesel engine. The property of a coating is improved to enhance the wear resistance and scuffing resistance and also to improve resistance against peeling off. | 11-25-2010 |
20130062835 | COMPRESSION RING AND ITS PRODUCTION METHOD - To provide a price-competitive compression ring having excellent thermal conductivity and thermal sag resistance, which can be used in a high-thermal-load environment of high-compression-ratio engines, steel identified by the material number of SUP10 in JIS G 4801, which contains small amounts of alloying elements, is used, and a piston ring wire is annealed before an oil-tempering treatment such that spheroidal cementite having an average particle size of 0.1-1.5 μm is dispersed in a tempered martensite matrix, thereby suppressing the movement of dislocation and creep even at 300° C., and improving thermal sag resistance. | 03-14-2013 |
20140117626 | COMPRESSION RING AND ITS PRODUCTION METHOD - To provide a price-competitive compression ring having excellent thermal conductivity and thermal sag resistance, which can be used in a high-thermal-load environment of high-compression-ratio engines, steel identified by the material number of SKS93 in JIS G 4404 is used, and a piston ring wire is annealed before an oil-tempering treatment such that spheroidal cementite having an average particle size of 0.1-1.5 μm is dispersed in a tempered martensite matrix. | 05-01-2014 |
20140125013 | PISTON RING - A high-thermal-conductivity piston ring having excellent scuffing resistance and wear resistance, which can be used in a high-heat-load environment in engines is provided. Also, to provide a piston ring with low friction for contributing to the improvement of fuel efficiency, a TiN coating as thick as 10-60 μm, in which the texture coefficient of a (111) plane is 1.2-1.65 in X-ray diffraction on the coating surface, with the texture coefficient of a (111) plane>the texture coefficient of a (220) plane>the texture coefficient of a (200) plane, is formed under the optimized ion plating conditions on a peripheral surface of the piston ring. Further, to obtain excellent sliding characteristics with low friction without losing excellent thermal conductivity of TiN, a hard amorphous carbon coating is formed on the TiN coating. | 05-08-2014 |
20140137733 | PISTON RING - To provide a high-thermal-conductivity piston ring having excellent scuffing resistance and wear resistance, which can be used in a high-heat-load environment in engines, a TiN coating as thick as 10-60 μm, in which the texture coefficient of a (220) plane is 1.1-1.8 in X-ray diffraction on the coating surface, larger than those of (111) and (200) planes, is formed under the optimized ion plating conditions on a peripheral surface of the piston ring. Also, to obtain excellent sliding characteristics with low friction without losing excellent thermal conductivity of TiN, a hard amorphous carbon coating is formed on the TiN coating. | 05-22-2014 |
Patent application number | Description | Published |
20090321492 | FASTENER DRIVING TOOL - A fastener driving tool has a housing, a nose portion, a magazine, a motor, a plunger, a drive mechanism, a trigger switch, a detection switch, an energizing switch, a failure detection circuit. The magazine is configured to store and supply a fastener to the nose portion. The motor is provided in the housing. The a plunger is provided in the housing to move between a top dead center and a bottom dead center. The plunger has a blade for impacting the fastener. The drive mechanism is configured to drive the plunger with power from the motor. The trigger switch is configured to drive the drive mechanism, and operated by a user. The detection switch is configured to be switched according to an arrangement of the drive mechanism. The energizing switch is configured to control power feed of the motor. The energizing switch is switched by the trigger switch and the detection switch. The failure detection circuit is configured to turn off the energizing switch, based on a condition of the detection switch prior to impacting the fastener. | 12-31-2009 |
20120274245 | Power Tool and Battery Pack - A power tool is connectable to a battery pack including a secondary battery. The power tool includes a motor and a prohibiting unit. The motor is driven with an electrical power supplied from the secondary battery. The prohibiting unit prohibits the supply of the electrical power to the motor based on a drop amount of a voltage of the secondary battery. | 11-01-2012 |
20150061549 | BATTERY PACK, POWER TOOL AND BATTERY CHARGER - A battery pack includes: a plus terminal and a minus terminal; a secondary battery; and a booster. The secondary battery has a rated voltage and is configured to output a battery voltage across the plus terminal and the minus terminal. A charging device and a discharging device are selectively connectable to the plus terminal and the minus terminal. The charging device charges the secondary battery. The discharging device performs a job with the battery voltage supplied from the secondary battery. The booster is configured to boost the battery voltage to a voltage greater than the rated voltage. The voltage boosted is used as a control voltage for either connecting the secondary battery to or disconnecting the secondary battery from the charging device or the discharging device. | 03-05-2015 |