Patent application number | Description | Published |
20090102863 | Method of Decoding Fetched Scene on Encoded Dotmap and Electronic Device thereof - By determining a center physical grid dot at intersects of virtual grid lines of a fetched scene on an encoded dotmap, and by defining a blank dot closest to the determined center physical grid dot on the fetched scene, the orientation of encoded blocks on the encoded dotmap may be determined. And therefore, a plurality of data dots on the fetched scene may also be decoded easily. | 04-23-2009 |
20100027077 | Method of Determining Coordinate on Micro Dotmap according to Moving Vector - When a user holds an optical scanning device to scan a micro dotmap on a displaying medium, a coordinate of a frame center of a retrieved frame on the displaying medium is calculated according to a decoding method for the micro dotmap in advance. A moving vector corresponding to a difference between difference frames scanned by the optical scanning device at different moments is calculated so that an instant location of the frame center on the displaying medium can be calculated anytime. Therefore, a large number of calculations brought by frequent decoding may be saved since merely a few calculations are required in calculating the moving vector. By further decoding the coordinate of the frame center at moments spaced with constant or variable intervals, errors brought by vibrations of the displaying medium are instantly fixed. Accumulated errors are avoided in the calculated instant locations of the frame center anytime. | 02-04-2010 |
20100027912 | Method of Raising Resolution in Locating on a Micro Dotmap - While a plurality of encoding blocks included in a micro dotmap are used for marking coordinates and locating a frame center on a displaying medium, a resolution of locating the frame center is raised by finding a microdot having a shortest distance from the frame center respectively in two microdot sets of a header region, or by determining a distance scale between an origin of the encoding block and each of two parallel projection points of both the microdot sets corresponding to the frame center. Both the microdot sets correspond to different dimensions in representing the coordinate of the frame center. The closest one-dimensional coordinates are then combined to form a two-dimensional coordinate of the frame center. Therefore, while applying the abovementioned method on a touch screen manipulated with touches of an optical pen, movements of the frame center on the screen can be manipulated skillfully by a user. | 02-04-2010 |
20130301087 | Method of Determining Coordinate on Micro Dotmap according to Moving Vector - When a user holds an optical scanning device to scan a micro dotmap on a displaying medium, a coordinate of a frame center of a retrieved frame on the displaying medium is calculated according to a decoding method for the micro dotmap in advance. A moving vector corresponding to a difference between difference frames scanned by the optical scanning device at different moments is calculated so that an instant location of the frame center on the displaying medium can be calculated anytime. Therefore, a large number of calculations brought by frequent decoding may be saved since merely a few calculations are required in calculating the moving vector. By further decoding the coordinate of the frame center at moments spaced with constant or variable intervals, errors brought by vibrations of the displaying medium are instantly fixed. Accumulated errors are avoided in the calculated instant locations of the frame center anytime. | 11-14-2013 |
Patent application number | Description | Published |
20100181500 | METHOD AND SYSTEM FOR LOW TEMPERATURE ION IMPLANTATION - A method comprises pre-cooling a first semiconductor wafer outside of a process chamber, from a temperature at or above 15° C. to a temperature below 5° C. The pre-cooled first wafer is placed inside the process chamber after performing the pre-cooling step. A low-temperature ion implantation is performed on the first wafer after placing the first wafer. | 07-22-2010 |
20100210189 | SLURRY DISPENSER FOR CHEMICAL MECHANICAL POLISHING (CMP) APPARATUS AND METHOD - A chemical mechanical polishing method and apparatus provides a deformable, telescoping slurry dispenser arm coupled to a dispenser head that may be arcuate in shape and may also be a bendable telescoping member that can be adjusted to vary the number of slurry dispenser ports and the degree of curvature of the dispenser head. The dispenser arm may additionally include slurry dispenser ports therein. The dispenser arm may advantageously be formed of a plurality of nested tubes that are slidable with respect to one another. The adjustable dispenser arm may pivot about a pivot point and can be variously positioned to accommodate different sized polishing pads used to polish substrates of different dimensions and the bendable, telescoping slurry dispenser arm and dispenser head provide uniform slurry distribution to any of various wafer polishing locations, effective slurry usage and uniform polishing profiles in each case. | 08-19-2010 |
20100248496 | ROTATABLE AND TUNABLE HEATERS FOR SEMICONDUCTOR FURNACE - A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of rotatable heaters arranged and operative to heat the chamber. In one embodiment, spacing between the sidewall heaters is adjustable. The heating system controls temperature variations within the chamber and promotes uniform film deposit thickness on the wafers. | 09-30-2010 |
20100291840 | SYSTEM AND METHOD FOR CONDITIONING CHEMICAL MECHANICAL POLISHING APPARATUS USING MULTIPLE CONDITIONING DISKS - A chemical mechanical polishing (CMP) apparatus provides for polishing semiconductor wafers and for conditioning the polishing pad of the CMP apparatus using multiple conditioning disks at the same time. The conditioning disks may be moved together or independently along the surface of polishing pad to condition the entire surface of the rotating polishing pad. | 11-18-2010 |
20130171746 | MULTI-ZONE TEMPERATURE CONTROL FOR SEMICONDUCTOR WAFER - An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's. | 07-04-2013 |
20130217235 | APPARATUS AND METHOD FOR CONTROLLING SILICON NITRIDE ETCHING TANK - A method and apparatus for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs. | 08-22-2013 |
20130330938 | ROTATABLE AND TUNABLE HEATERS FOR SEMICONDUCTOR FURNACE - A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers. | 12-12-2013 |