Patent application number | Description | Published |
20080265161 | Electron Microscope And Electron Beam Inspection System - An electron microscope includes an electron source, a stage for mounting a specimen, an illuminating lens system that illuminates an electron beam onto the specimen, an imaging lens system that forms a specimen image using a reflecting electron beam of the illuminating electron beam, a beam separator that separates the illuminating electron beam and the reflecting electron beam, a control unit that controls current to be supplied to the beam separator; and a switching unit which enables switching between a first mode and a second mode. The control unit changes a value of the current to be supplied to the beam separator when switching from the first mode to the second mode. | 10-30-2008 |
20080315093 | Electron beam inspection method and electron beam inspection apparatus - An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation. | 12-25-2008 |
20090261252 | Method and apparatus for pattern inspection - Because a mirror electron imaging type inspection apparatus for obtaining an inspection object image with mirror electrons has been difficult to optimize inspection conditions, since the image forming principles of the apparatus are different from those of conventional SEM type inspection apparatuses. In order to solve the above conventional problem, the present invention has made it possible for the user to examine such conditions as inspection speed, inspection sensitivity, etc. intuitively by displaying the relationship among the values of inspection speed S, inspection object digital signal image pixel size D, inspection object image size L, and image signal acquisition cycle P with use of a time delay integration method as a graph on an operation screen. The user can thus determine a set of values of a pixel size, an inspection image width, and a TDI sensor operation cycle easily with reference to the displayed graph. | 10-22-2009 |
20100181480 | CHARGED PARTICLE BEAM DEVICE - According to the present invention, a charged particle beam device has an unlimitedly rotatable sample stage and an electric field control electrode for correcting electric field distortion at a sample peripheral part. A voltage is applied to a sample on the unlimitedly rotatable sample stage through a retarding electrode that is in contact with a holder receiver at a rotation center of a rotary stage. An equipotential plane on the electric field control electrode is varied by applying a voltage to the electric field control electrode, and following this the equipotential plane at a sample edge is corrected, which enables the sample to be observed as far as its edge. | 07-22-2010 |
20110068267 | Electron beam inspection method and electron beam inspection apparatus - An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation. | 03-24-2011 |
20110204225 | ION Beam System and Machining Method - An ion beam machining system which performs a predetermined machining of a sample by irradiating the sample with an ion beam includes a beam spot former which forms a beam spot shape of the ion beam to be non-axially symmetric in a perpendicular plane with respect to an irradiation axis of the ion beam, and an axis orientator which orients one axis of the beam spot at the ion beam irradiation position on the sample in a predetermined direction. | 08-25-2011 |
20110284746 | CHARGED PARTICLE BEAM DEVICE - A charged particle beam device has a tilt detection unit that detects a tilt of a sample surface and an E×B deflector in which an electric field and a magnetic field are overlapped with each other and which causes, according to the detected tilt of the sample surface, the sample surface to be perpendicularly irradiated with an irradiation charged particle beam while, at the same time, aligning the trajectory of the charged particle beam with the optical axis centers of an irradiation optical system and an imaging optical system; thereby, the charged particle beam device can prevent problems possibly occurring in cases where a sample stage is tilted or a sample surface is undulating and can enable an accurate image to be acquired. | 11-24-2011 |