Patent application number | Description | Published |
20130248483 | METHOD FOR FABRICATING EMITTER - A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape. | 09-26-2013 |
20140246397 | METHOD FOR FABRICATING EMITTER - A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape. | 09-04-2014 |
20150047079 | Iridium Tip, Gas Field Ion Source, Focused Ion Beam Apparatus, Electron Source, Electron Microscope, Electron Beam Applied Analysis Apparatus, Ion-Electron Multi-Beam Apparatus, Scanning Probe Microscope, and Mask Repair Apparatus - There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus. | 02-12-2015 |
20150053866 | Repair Apparatus - There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions. | 02-26-2015 |
Patent application number | Description | Published |
20100109301 | AIRBAG DEVICE AND METHOD OF MANUFACTURING SAME - An airbag has a front panel positioned on an occupant side when inflated, and a rear panel of substantially the same shape as the front panel positioned on an opposite side to the occupant. Furthermore, an inflation restricting section, which restricts the inflated shape of the airbag, is formed by drawing together and fixing a portion of the front panel. When the airbag is inflated, the occupant side of the airbag is pulled inwards, thereby forming a cavity on the occupant side. | 05-06-2010 |
20100117340 | AIRBAG DEVICE AND METHOD OF MANUFACTURING SAME - An airbag has a front panel positioned on an occupant side when inflated, and a rear panel of substantially the same shape as the front panel positioned on an opposite side to the occupant. Furthermore, an inflation restricting section, which restricts the inflated shape of the airbag, is formed by drawing together and fixing a portion of the front panel. When the airbag is inflated, the occupant side of the airbag is pulled inwards, thereby forming a cavity on the occupant side. | 05-13-2010 |
Patent application number | Description | Published |
20150107773 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member. | 04-23-2015 |
20150109716 | PLASMA PROCESSING APPARATUS, POWER SUPPLY UNIT AND MOUNTING TABLE SYSTEM - A plasma processing apparatus includes a mounting table including a lower electrode and an electrostatic chuck, a high frequency power supply electrically connected to the lower electrode, a heater provided in the electrostatic chuck, a heater power supply for supplying a power to the heater, a filter unit including a filter connected to the heater power supply, a rod-shaped power feeder connecting the heater power supply and the heater via the filter, an insulating tubular portion having an inner hole through which the power feeder extends, and a conductive choke portion serving to suppress a microwave propagating through the tubular portion. The choke portion includes a first portion extending from the power feeder in a direction intersecting with a longitudinal direction of the power feeder and a cylindrical second portion extending, between the tubular portion and the power feeder, from a peripheral portion of the first portion. | 04-23-2015 |
Patent application number | Description | Published |
20120001190 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING SAME - The invention provides a thin film transistor that can improve its operating speed by improving crystallinity near a bottom surface of a channel layer. Of laser light irradiated onto an amorphous silicon layer, light transmitted through the amorphous silicon layer is absorbed by a gate electrode | 01-05-2012 |
20120091452 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units. | 04-19-2012 |
20120138923 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE - The present invention provides a thin film transistor including an oxide semiconductor layer ( | 06-07-2012 |
20120199891 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a gate electrode ( | 08-09-2012 |
20120218485 | ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL INCLUDING THE SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE - An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines ( | 08-30-2012 |
20120228621 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE - An object of this invention is to provide a semiconductor device in which TFTs with high mobility are arranged in both of display and peripheral circuit areas. A semiconductor device fabricating method according to the present invention includes the steps of: irradiating an amorphous silicon layer ( | 09-13-2012 |
20120241750 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device includes: a thin film transistor having a gate line ( | 09-27-2012 |
20130023086 | ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE - An active matrix substrate includes a plurality of pixel electrodes (P) provided in a matrix, and a plurality of TFTs ( | 01-24-2013 |
20130092923 | ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - An active matrix substrate includes a plurality of pixel electrodes ( | 04-18-2013 |
20130099227 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Al, In, Zn, and O as constituent atoms. | 04-25-2013 |
20130105788 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE | 05-02-2013 |
20130140552 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - A semiconductor device ( | 06-06-2013 |
20130193430 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01≦Zn/(In+Zn)≦0.22. | 08-01-2013 |
20140014950 | ACTIVE MATRIX SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY PANEL - An active matrix substrate ( | 01-16-2014 |
20140367683 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units. | 12-18-2014 |
Patent application number | Description | Published |
20090039495 | WIRING SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME - An active matrix substrate includes a first substrate and a driving integrated circuit chip mounted on the first substrate. A support member is provided between the active matrix substrate and the driving IC chip so as to be in contact with both the active matrix substrate and the driving IC chip. | 02-12-2009 |
20090141438 | CIRCUIT COMPONENT, ELECTRODE CONNECTION STRUCTURE AND DISPLAY DEVICE INCLUDING THE SAME - An electrode connection structure including a first circuit component including a resin plate, a barrier film stacked on a surface of the resin plate, a circuit section formed on the barrier film and a first electrode provided on the surface of the resin plate on which the barrier film is stacked, and a second circuit component arranged to face the first circuit component and having a second electrode facing the first electrode, wherein the first and second electrodes are electrically connected via pressure applied thereto in the directions approaching each other and a portion of the barrier film surrounding the first electrode is at least partially removed from the surface of the resin plate. | 06-04-2009 |
20090153765 | WIRING SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME - An active matrix substrate includes a first substrate, a driving integrated circuit chip mounted on the first substrate with an anisotropic electrically conductive layer, and an insulating member. The insulating member isolates a terminal from a wiring and a bump electrode that are adjacent to the terminal portion and isolates a bump electrode facing the terminal portion from a bump electrode and a wiring that are adjacent to the bump electrode. | 06-18-2009 |
20110007259 | METHOD FOR MANUFACTURING DISPLAY DEVICE AND DISPLAY DEVICE - A method for manufacturing a display device | 01-13-2011 |
20120104406 | THIN-FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTORS - Disclosed is a high-quality, efficiently manufacturable thin film transistor in which leakage current is minimized. The thin film transistor is provided with a semiconductor layer ( | 05-03-2012 |
20130105802 | THIN FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND DISPLAY DEVICE | 05-02-2013 |