Patent application number | Description | Published |
20100175612 | MANUFACTURING METHOD FOR SILICON SINGLE CRYSTAL - To provide a manufacturing method for a silicon single crystal that can reduce introduction of dislocation thereinto even if a required amount of dopant is added to a melt while growing a straight body portion of a silicon ingot. In a manufacturing method for a silicon single crystal according to the present invention that includes a dopant addition step of adding a dopant to a melt while a straight body portion of a silicon single crystal is growing in a growth step of growing the silicon single crystal by dipping a seed crystal into a silicon melt and then pulling the seed crystal therefrom, in the dopant addition step, a remaining mass of the melt is calculated at the beginning thereof, and the dopant is added to the melt at a rate of 0.01 to 0.035 g/min·kg per minute per 1 kg of the calculated remaining mass of the melt. | 07-15-2010 |
20110017948 | SILICON SINGLE CRYSTAL PULLING APPARATUS AND MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL - Disclosed is a silicon single crystal pull-up apparatus that can grow a silicon single crystal having a desired electrical resistivity, to which a sublimable dopant has been reliably added, regardless of the length of the time necessary for the formation of a first half part of a straight body part in a silicon single crystal. Also disclosed is a process for producing a silicon single crystal. The silicon single crystal pull-up apparatus pulls up a silicon single crystal from a melt by a Czochralski method. The silicon single crystal pull-up apparatus comprises a pull-up furnace, a sample chamber that is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding mechanism that thermally shields the pull-up furnace and the sample chamber, and supply means that, after the release of shielding of the shielding mechanism, supplies the sublimable dopant into the melt. | 01-27-2011 |
20110120367 | SILICON SINGLE CRYSTAL PULL-UP APPARATUS - A silicon single crystal pull-up apparatus includes a pull-up furnace, a sample chamber in which a sublimable dopant is housed, a sample tube which can be raised and lowered between the interior of the sample chamber and the interior of the pull-up furnace, a raising and lowering means for raising and lowering the sample tube, a supply pipe which is installed inside the pull-up furnace and supplies the sublimable dopant to a melt, and a connection means for connecting the sample tube and the supply pipe. The connection means is constructed from a ball joint structure comprising a convex member which projects from one end of the sample tube and a concave member which is provided at one end of the supply pipe and is formed to be engageable with the convex member. The contact surfaces of the convex member and the concave member are formed to be curved surfaces. | 05-26-2011 |
20110132257 | SILICON SINGLE CRYSTAL PULL-UP APPARATUS - A silicon single crystal pull-up apparatus is used to pull up a doped silicon single crystal from a melt by means of the Czochralski process and includes a pull-up furnace, a sample chamber which is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding means for thermally isolating the interior of the pull-up furnace and the interior of the sample chamber, a sample tube which can be raised and lowered between the interior of the sample chamber and the interior of the pull-up furnace, and a raising and lowering means which is provided with guide rails on which the sample tube can slide and a wire mechanism by which the sample tube is raised and lowered along the guide rails. | 06-09-2011 |
20150107509 | SILICON SINGLE CRYSTAL PULLING APPARATUS AND MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL - Disclosed is a silicon single crystal pull-up apparatus that can grow a silicon single crystal having a desired electrical resistivity, to which a sublimable dopant has been reliably added, regardless of the length of the time necessary for the formation of a first half part of a straight body part in a silicon single crystal. Also disclosed is a process for producing a silicon single crystal. The silicon single crystal pull-up apparatus pulls up a silicon single crystal from a melt by a Czochralski method. The silicon single crystal pull-up apparatus comprises a pull-up furnace, a sample chamber that is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding mechanism that thermally shields the pull-up furnace and the sample chamber, and supply means that, after the release of shielding of the shielding mechanism, supplies the sublimable dopant into the melt. | 04-23-2015 |
Patent application number | Description | Published |
20140111932 | STORAGE APPARATUS AND STORAGE CONTROLLER OF STORAGE APPARATUS - Storage apparatus configured to provide an external apparatus with logical storage area as data storage area, the storage apparatus having a physical storage medium configured to generate the logical storage area, and storage controller communicatively coupled to physical storage medium to control data input/output processing between the external apparatus and the logical storage area, wherein the storage controller includes circuit package including circuit board which implements predetermined function of storage controller and a circuit board case to accommodate the circuit board, plurality of cooling fan units that generate cooling air for cooling circuit component mounted on the circuit board of the circuit package, and a chassis having a structure for accommodating the circuit package and the cooling fan units, some of circuit packages are inserted to be accommodated in chassis from opening thereof and are arranged side by side across width direction of chassis. | 04-24-2014 |
20150305206 | STORAGE APPARATUS AND STORAGE CONTROLLER OF STORAGE APPARATUS - A storage apparatus configured to provide an external apparatus with a logical storage area as a data storage area, the storage apparatus having a physical storage medium configured to generate the logical storage area, and a storage controller communicatively coupled to the physical storage medium to control data input/output processing between the external apparatus and the logical storage area, wherein the storage controller includes a circuit package including a circuit board which implements a predetermined function of the storage controller and a circuit board case to accommodate the circuit board, a plurality of cooling fan units that generate cooling air for cooling a circuit component mounted on the circuit board of the circuit package, and a chassis having a structure for accommodating the circuit package and the cooling fan units, at least some of the plurality of circuit packages are inserted to be accommodated in the chassis from one opening thereof and are arranged side by side across a width direction of the chassis. | 10-22-2015 |