Patent application number | Description | Published |
20100173496 | PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATION TREATMENT - A method of forming spacers from a non-silicon oxide, silicon containing spacer layer with horizontal surfaces and sidewall surfaces over a substrate is provided. A plasma oxidation treatment is provided to form a silicon oxide coating over the spacer layer, wherein the silicon oxide coating provides a horizontal coating on the horizontal surfaces and sidewall coatings on the sidewall surfaces of the spacer layer. An anisotropic main etch that selectively etches horizontal surfaces of the spacer layer and silicon oxide coating with respect to sidewall surfaces of the spacer layer and the sidewall coatings of the silicon oxide coating is provided. The spacer layer is etched, wherein the sidewall coatings of the silicon oxide coating protect sidewall surfaces of the spacer layer. | 07-08-2010 |
20130025785 | PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATION TREATMENT - An apparatus for forming spacers is provided. A plasma processing chamber is provided, comprising a chamber wall, a substrate support, a pressure regulator, an antenna, a bias electrode, a gas inlet, and a gas outlet. A gas source comprises an oxygen gas source and an anisotropic etch gas source. A controller comprises a processor and computer readable media. The computer readable media comprises computer readable code for placing a substrate of the plurality of substrates in a plasma etch chamber, computer readable code for providing a plasma oxidation treatment to form a silicon oxide coating over the spacer layer, computer readable code for sputtering silicon to form silicon oxide with the oxygen plasma, computer readable code for providing an anisotropic main etch, computer readable code for etching the spacer layer, computer readable code for removing the substrate from the plasma etch chamber after etching the spacer layer. | 01-31-2013 |
20130267097 | METHOD AND APPARATUS FOR FORMING FEATURES WITH PLASMA PRE-ETCH TREATMENT ON PHOTORESIST - A method for forming features through a photoresist mask into an underlying layer is provided. The photoresist mask has patterned mask features. The photoresist mask has patterned mask features. A treatment gas containing H | 10-10-2013 |
20140030893 | METHOD FOR SHRINK AND TUNE TRENCH/VIA CD - A method for etching with CD reduction, an etch layer disposed below a silicon containing mask layer under a patterned organic mask with features with a first CD. Features are opened in the silicon containing mask layer using the patterned organic mask, comprising providing an opening gas with an etchant component and polymerizing component, forming the opening gas into a plasma, and providing a pulsed bias with a pulse frequency between 10 Hz and 1 kHz, which etches features through the silicon containing mask layer with a second CD, which is less than half the first CD, forming a pattern in the silicon containing mask layer. The pattern of the silicon containing mask layer is transferred to the etch layer. | 01-30-2014 |
20140038419 | METHOD FOR PROVIDING VIAS - A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H | 02-06-2014 |
20140051256 | ETCH WITH MIXED MODE PULSING - A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided. The etch gas is formed into a plasma. A bias RF with a frequency between 2 and 60 MHz is provided that provides pulsed bias with a pulse frequency between 10 Hz and 1 kHz wherein the pulsed bias selectively deposits on top of the organic mask with respect to the dielectric layer. | 02-20-2014 |
20140179106 | IN-SITU METAL RESIDUE CLEAN - A method for forming devices in an oxide layer over a substrate, wherein a metal containing layer forms at least either an etch stop layer below the oxide layer or a patterned mask above the oxide layer, wherein a patterned organic mask is above the oxide layer is provided. The substrate is placed in a plasma processing chamber. The oxide layer is etched through the patterned organic mask, wherein metal residue from the metal containing layer forms metal residue on sidewalls of the oxide layer. The patterned organic mask is stripped. The metal residue is cleaned by the steps comprising providing a cleaning gas comprising BCl | 06-26-2014 |
20140220709 | CONTROLLING CD AND CD UNIFORMITY WITH TRIM TIME AND TEMPERATURE ON A WAFER BY WAFER BASIS - Exemplary embodiments are directed to controlling CD uniformity of a wafer by controlling trim time on temperature in a plasma processing system. The plasma processing system has a wafer support assembly including a plurality of independently controllable temperature control zones across a chuck and a controller that controls each temperature control zone. The controller receives process control and temperature data associated with at least one wafer previously processed in a plasma chamber of the plasma processing system, and critical device parameters of a current wafer to be processed in the plasma chamber. The controller calculates a target trim time and a target temperature profile of the current wafer based on the process control and temperature data, and the critical device parameters. The current wafer is trimmed during the target trim time while the temperature of each device die location is controlled based on the target temperature profile. | 08-07-2014 |
20140302678 | INTERNAL PLASMA GRID APPLICATIONS FOR SEMICONDUCTOR FABRICATION - The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber. The ion-ion plasma may be used to advantage in a variety of etching processes. | 10-09-2014 |
20140302680 | INTERNAL PLASMA GRID FOR SEMICONDUCTOR FABRICATION - The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber. | 10-09-2014 |
20150053347 | CONTROLLING CD AND CD UNIFORMITY WITH TRIM TIME AND TEMPERATURE ON A WAFER BY WAFER BASIS - Exemplary embodiments are directed to controlling CD uniformity of a wafer by controlling trim time on temperature in a plasma processing system. The plasma processing system has a wafer support assembly including a plurality of independently controllable temperature control zones across a chuck and a controller that controls each temperature control zone. The controller receives process control and temperature data associated with at least one wafer previously processed in a plasma chamber of the plasma processing system. The controller also receives critical device parameters of a current wafer to be processed in the plasma chamber. The controller calculates a target trim time and a target temperature profile of the current wafer based on the process control and temperature data of the at least one previously processed wafers and the critical device parameters of the current wafer. The current wafer as subjected to a trimming operation for a duration of the target trim time while controlling temperatures in the temperature control zones to thereby control temperature of each device die location based on the target temperature profile. | 02-26-2015 |
20150249016 | METHOD OF PLANARIZING AN UPPER SURFACE OF A SEMICONDUCTOR SUBSTRATE IN A PLASMA ETCH CHAMBER - A method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber comprises supporting the substrate on a support surface of a substrate support assembly that includes an array of independently controlled thermal control elements therein which are operable to control the spatial and temporal temperature of the support surface of the substrate support assembly to form independently controllable heater zones which are formed to correspond to a desired temperature profile across the upper surface of the semiconductor substrate. The etch rate across the upper surface of the semiconductor substrate during plasma etching depends on a localized temperature thereof wherein the desired temperature profile is determined such that the upper surface of the semiconductor substrate is planarized within a predetermined time. The substrate is plasma etched for the predetermined time thereby planarizing the upper surface of the substrate. | 09-03-2015 |
Patent application number | Description | Published |
20090048863 | METHOD AND APPARATUS FOR MEDICATION PRESCRIPTION CONSULTATION - A method and apparatus of providing a pharmaceutical consultation prevents a person from receiving a medication prescription if consultation is required, and enables a user to readily view the medication prescription information and convey information to the person. Methods and apparatus of providing a pharmaceutical consultation are provided herein. The methods and apparatus include receiving medication prescription data relating to the medication prescription, and displaying a consultation review screen having a medication prescription view with information relating to the medication prescription and a discussion view with information to be conveyed to the person. The medication prescription data includes a consultation requirement for the medication prescription. A transaction for the medication prescription is prevented if consultation is required, and permitted when data is received indicating the consultation is completed. The methods and apparatus of pharmaceutical, consultation also include remote consultation between a user and a person at different geographic locations. | 02-19-2009 |
20090048864 | METHOD AND APPARATUS FOR THERAPEUTIC INTERCHANGE - A method and apparatus of interchanging a prescribed medication with a therapeutically equivalent replacement medication includes receiving medication prescription data relating to a medication prescription for a person identifying a therapeutically equivalent replacement medication for a medication associated with the medication prescription, generating an exception for the medication if a replacement medication is identified so as to prevent the medication from being dispensed to the person until the exception is resolved, transmitting a request to replace the prescribed medication with the therapeutically equivalent replacement medication to a medical provider, and resolving the exception based on the response from the medical provider. | 02-19-2009 |
20110307270 | SYSTEM FOR SEPARATING AND DISTRIBUTING PHARMACY ORDER PROCESSING FOR PRESCRIPTION VERIFICATION - An information system and method that provides the ability to reroute portions of prescription order work between a plurality of organizational units in order to leverage capacity, expertise, or other resources to increase network efficiency. | 12-15-2011 |
Patent application number | Description | Published |
20140022358 | PRISM CAMERA METHODS, APPARATUS, AND SYSTEMS - Methods, system, and apparatus for generating depth maps are described. A depth map may be generated by obtaining a transformation for a prism camera having a still image capture mode and a video mode (the transformation based on the difference between the still image transfer mode and the video mode), capturing a multi-view still image with the camera, capturing multi-view video images with the camera, and generating a resolved video depth map from the transformation, the multi-view still image, and the multi-view video. The depth map may be converted to a 3D structure. Multiple resolved 3D structures from prism camera apparatus may be combined to generate volumetric reconstruction of the scene. | 01-23-2014 |
20140152776 | Stereo Correspondence and Depth Sensors - Stereo correspondence and depth sensor techniques are described. In one or more implementations, a depth map generated by a depth sensor is leveraged as part of processing of stereo images to assist in identifying which parts of stereo images correspond to each other. The depth map, for instance, may be utilized to assist in identifying depth discontinuities in the stereo images. Additionally, techniques may be employed to align the depth discontinuities identified from the depth map to image edges identified from the stereo images. Techniques may also be employed to suppress image edges that do not correspond to the depth discontinuities of the depth map in comparison with image edges that do correspond to the depth discontinuities as part of the identification. | 06-05-2014 |
20140153816 | Depth Map Stereo Correspondence Techniques - Depth map stereo correspondence techniques are described. In one or more implementations, a depth map generated through use of a depth sensor is leveraged as part of processing of stereo images to assist in identifying which parts of stereo images correspond to each other. For example, the depth map may be utilized to describe depth of an image scene which may be used as part of a stereo correspondence calculation. The depth map may also be utilized as part of a determination of a search range to be employed as part of the stereo correspondence calculation. | 06-05-2014 |