Patent application number | Description | Published |
20080288825 | STORAGE SUBSYSTEM, STORAGE SYSTEM, AND COMMUNICATION CONTROL METHOD - In a storage subsystem which is connected to an IP network, by excluding an improper packet, security is heightened, and a performance of communication to a logical unit of storage subsystem is maintained and secured. In the storage subsystem, a function which carries out filtering of a packet other than an iSCSI packet is provided. With respect to only the packet passed through the function, its accessibility to the logical unit is filtered. Also, traffic of all received packets, and a traffic lob of a packet judged to be discarded by the above filtering is recorded. By using this information, controlling such as a cut-off process of improper communication, QoS securement for normal communication and so on, are carried out. | 11-20-2008 |
20150067014 | COMPUTER SYSTEM AND CONTROL METHOD OF COMPUTER SYSTEM - A computer system includes a plurality of processing computers which switches an execution time of a main function processing and a management function processing in a given time, and a management computer which has a schedule table showing a schedule in which each processing computer may execute the management function processing, and which is capable of instructing the execution of the management function processing to each processing computer, wherein the processing computer notifies a start time an end time of the management function processing to the management computer before starting the management function processing, and the management computer updates the schedule table with the notification, an decides the processing computer that may execute the management function processing, by referring to the schedule table, upon instructing the management function processing to the processing computer. | 03-05-2015 |
Patent application number | Description | Published |
20100035164 | MASK BLANK SUBSTRATE, MASK BLANK, EXPOSURE MASK, MASK BLANK SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR MANUFACTURING METHOD - In a mask blank substrate to be chucked by a mask stage of an exposure system, the flatness of a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the mask blank substrate on its side to be chucked by the mask stage is 0.6 μm or less, and at least three of four corner portions of the flatness measurement area each have a shape that rises toward the outer peripheral side. | 02-11-2010 |
20100173232 | MASK BLANK PROVIDING SYSTEM, MASK BLANK PROVIDING METHOD, MASK BLANK TRANSPARENT SUBSTRATE MANUFACTURING METHOD, MASK BLANK MANUFACTURING METHOD, AND MASK MANUFACTURING METHOD - A mask blank manufacturing department manufactures a mask blank by forming a thin film to be a mask pattern on a mask blank transparent substrate. When providing the mask blank to a mask manufacturing department, the mask blank manufacturing department provides optical characteristic information (transmittance variation) of the mask blank transparent substrate and optical characteristic information (transmittance variation and/or phase difference variation) of the mask blank to the mask manufacturing department. The optical characteristic information of the mask blank transparent substrate is provided to the mask blank manufacturing department from a materials processing department that manufactures mask blank transparent substrates. | 07-08-2010 |
20100248092 | MASK BLANK SUBSTRATE, MASK BLANK, EXPOSURE MASK, MASK BLANK SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR MANUFACTURING METHOD - In a mask blank substrate to be chucked by a mask stage of an exposure system, the flatness of a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the mask blank substrate on its side to be chucked by the mask stage is 0.6 μm or less, and at least three of four corner portions of the flatness measurement area each have a shape that rises toward the outer peripheral side. | 09-30-2010 |
20110262847 | MASK BLANK PROVIDING SYSTEM, MASK BLANK PROVIDING METHOD, MASK BLANK TRANSPARENT SUBSTRATE MANUFACTURING METHOD, MASK BLANK MANUFACTURING METHOD, AND MASK MANUFACTURING METHOD - A mask blank manufacturing department manufactures a mask blank by forming a thin film to be a mask pattern on a mask blank transparent substrate. When providing the mask blank to a mask manufacturing department, the mask blank manufacturing department provides optical characteristic information (transmittance variation) of the mask blank transparent substrate and optical characteristic information (transmittance variation and/or phase difference variation) of the mask blank to the mask manufacturing department. The optical characteristic information of the mask blank transparent substrate is provided to the mask blank manufacturing department from a materials processing department that manufactures mask blank transparent substrates. | 10-27-2011 |
Patent application number | Description | Published |
20090080488 | SURFACE EMITTING LASER - A surface emitting laser including a semiconductor substrate, a semiconductor substrate, a first reflector formed on the semiconductor substrate, an active layer formed on the first reflector, a tunnel junction layer formed above a part of the active layer, a semiconductor spacer layer which covers the tunnel junction layer, a second reflector formed on the semiconductor spacer layer in a region above the tunnel junction layer, a first electrode formed in the periphery of the second reflector on the semiconductor spacer layer, and a second electrode electrically connected to a layer lower than the active layer, wherein a layer thickness of the semiconductor spacer layer in the region directly above the tunnel junction layer is thinner than the layer thickness of the semiconductor spacer layer in the region directly below the first electrode. | 03-26-2009 |
20100020835 | SURFACE EMITTING LASER - A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index n | 01-28-2010 |
20100034233 | SURFACE-EMISSION TYPE SEMICONDUCTOR LASER - The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ | 02-11-2010 |