Riley, TX
Deborah Riley, Murphy, TX US
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20140054710 | Reduction of Proximity Effects in Field-Effect Transistors with Embedded Silicon-Germanium Source and Drain Regions - An integrated circuit and method of fabricating the same utilizing embedded silicon-germanium (SiGe) source/drain regions, and in which the proximity effect of nearby shallow trench isolation structures is reduced. Embedded SiGe source/drain structures are formed by selective epitaxy into recesses etched into the semiconductor surface, on either side of each gate electrode. The SiGe structures overfill the recesses by at least about 30% of the depth of the recesses, as measured from the interface between the channel region and the overlying gate dielectric at the edge of the gate electrode. This overfill has been observed to reduce proximity effects of nearby shallow trench isolation structures on nearby transistors. Additional reduction in the proximity effect can be obtained by ensuring sufficient spacing between the edge of the gate electrode and a parallel edge of the nearest shallow trench isolation structure. | 02-27-2014 |
Deborah J. Riley, Murphy, TX US
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20090098695 | DIFFERENTIAL OFFSET SPACER - A method of fabricating a CMOS integrated circuit includes the steps of providing a substrate having a semiconductor surface, forming a gate dielectric and a plurality of gate electrodes thereon in both NMOS and PMOS regions using the surface. A multi-layer offset spacer stack including a top layer and a compositionally different bottom layer is formed and the multi-layer spacer stack is etched to form offset spacers on sidewalls of the gate electrodes. The transistors designed to utilize a thinner offset spacer are covered with a first masking material, and transistors designed to utilize a thicker offset spacer are patterned and first implanted. At least a portion of the top layer is removed to leave the thinner offset spacers on sidewalls of the gate electrodes. The transistors designed to utilize the thicker offset spacer are covered with a second masking material, and the transistors designed to utilize the thinner offset spacer are patterned and second implanted. The fabrication of the integrated circuit is then completed. | 04-16-2009 |
20100032813 | IC FORMED WITH DENSIFIED CHEMICAL OXIDE LAYER - A semiconductor device, such as an integrated circuit, has an oxide chemically grown on a silicon surface, and densified by annealing at, e.g., 950° C. for 4 to 5 seconds in an N | 02-11-2010 |
20100167519 | POST HIGH-K DIELECTRIC/METAL GATE CLEAN - A method for fabricating a CMOS integrated circuit (IC) includes the step of providing a substrate having a semiconductor surface. A gate stack including a metal gate electrode on a metal including high-k dielectric layer is formed on the semiconductor surface. Dry etching is used to pattern the gate stack to define a patterned gate electrode stack having exposed sidewalls of the metal gate electrode. The dry etching forms post etch residuals some of which are deposited on the substrate. The substrate including the patterned gate electrode stack is exposed to a solution cleaning sequence including a first clean step including a first acid and a fluoride for removing at least a portion of the post etch residuals, wherein the first clean step has a high selectivity to avoid etching the exposed sidewalls of the metal gate electrode. A second clean after the first clean consists essentially of a fluoride which removes residual high-k material on the semiconductor surface. | 07-01-2010 |
20100248440 | NITRIDE REMOVAL WHILE PROTECTING SEMICONDUCTOR SURFACES FOR FORMING SHALLOW JUNCTIONS - A method of removing silicon nitride over a semiconductor surface for forming shallow junctions. Sidewall spacers are formed along sidewalls of a gate stack that together define lightly doped drain (LDD) regions or source/drain (S/D) regions. At least one of the sidewall spacers, LDD regions and S/D regions include an exposed silicon nitride layer. The LDD or S/D regions include a protective dielectric layer formed directly on the semiconductor surface. Ion implanting implants the LDD regions or S/D regions using the sidewall spacers as implant masks. The exposed silicon nitride layer is selectively removed, wherein the protective dielectric layer when the sidewall spacers include the exposed silicon nitride layer, or a replacement protective dielectric layer formed directly on the semiconductor surface after ion implanting when the LDD or S/D regions include the exposed silicon nitride layer, protects the LDD or S/D regions from dopant loss due to etching during selectively removing. | 09-30-2010 |
20110042753 | STRAIN-ENGINEERED MOSFETS HAVING RIMMED SOURCE-DRAIN RECESSES - An integrated circuit (IC) includes a plurality of strained metal oxide semiconductor (MOS) devices that include a semiconductor surface having a first doping type, a gate electrode stack over a portion of the semiconductor surface, and source/drain recesses that extend into the semiconductor surface and are framed by semiconductor surface interface regions on opposing sides of the gate stack. A first epitaxial strained alloy layer (rim) is on the semiconductor surface interface regions, and is doped with the first doping type. A second epitaxial strained alloy layer is on the rim and is doped with a second doping type that is opposite to the first doping type that is used to form source/drain regions. | 02-24-2011 |
20120108027 | IMPROVED SILICIDE METHOD - A process for forming an integrated circuit with reduced sidewall spacers to enable improved silicide formation between minimum spaced transistor gates. A process for forming an integrated circuit with reduced sidewall spacers by first forming sidewall spacer by etching a sidewall dielectric and stopping on an etch stop layer, implanting source and drain dopants self aligned to the sidewall spacers, followed by removing a portion of the sidewall dielectric and removing the etch stop layer self aligned to the reduced sidewall spacers prior to forming silicide. | 05-03-2012 |
20140167182 | ZTCR POLY RESISTOR IN REPLACEMENT GATE FLOW - An integrated circuit having a replacement gate MOS transistor and a polysilicon resistor may be formed by removing a portion at the top surface of the polysilicon layer in the resistor area. A subsequently formed gate etch hard mask includes a MOS hard mask segment over a MOS sacrificial gate and a resistor hard mask segment over a resistor body. The resistor body is thinner than the MOS sacrificial gate. During the gate replacement process sequence, the MOS hard mask segment is removed, exposing the MOS sacrificial gate while at least a portion of the resistor hard mask segment remains over the resistor body. The MOS sacrificial gate is replaced by a replacement gate while the resistor body is not replaced. | 06-19-2014 |
20150187755 | NPN HETEROJUNCTION BIPOLAR TRANSISTOR IN CMOS FLOW - An integrated circuit formed on a silicon substrate includes an NMOS transistor with n-channel raised source and drain (NRSD) layers adjacent to a gate of the NMOS transistor, a PMOS transistor with SiGe stressors in the substrate adjacent to a gate of the PMOS transistor, and an NPN heterojunction bipolar transistor (NHBT) with a p-type SiGe base formed in the substrate and an n-type silicon emitter formed on the SiGe base. The SiGe stressors and the SiGe base are formed by silicon-germanium epitaxy. The NRSD layers and the silicon emitter are formed by silicon epitaxy. | 07-02-2015 |
Deborah Jean Riley, Murphy, TX US
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20150031177 | METHOD OF CMOS MANUFACTURING UTILIZING MULTI-LAYER EPITAXIAL HARDMASK FILMS FOR IMPROVED EPI PROFILE - An integrated circuit containing PMOS transistors may be formed by forming a dual layer hard mask. A first layer of the hard mask is halogen-containing silicon nitride formed using a halogenated silane reagent. A second layer of the hard mask is silicon nitride formed on the first layer using halogen-free reagents. After source/drain cavities are etched in the PMOS transistors, a pre-epitaxial bake with hydrogen is performed. After SiGe epitaxial source/drain regions are formed, the hard mask is removed. | 01-29-2015 |
20150031178 | METHOD OF CMOS MANUFACTURING UTILIZING MULTI-LAYER EPITAXIAL HARDMASK FILMS FOR IMPROVED GATE SPACER CONTROL - An integrated circuit containing PMOS transistors may be formed by forming a dual layer hard mask. A first layer of the hard mask is carbon-containing silicon nitride formed using a hydrocarbon reagent. A second layer of the hard mask is chlorine-containing silicon nitride formed on the first layer using a chlorinated silane reagent. After SiGe epitaxial source/drain regions are formed, the hard mask is removed using a wet etch which removes the second layer at a rate at least three times faster than the first layer. | 01-29-2015 |
20150061034 | DEVICES HAVING INHOMOGENEOUS SILICIDE SCHOTTKY BARRIER CONTACTS - A method of fabricating Schottky barrier contacts for an integrated circuit (IC). A substrate including a silicon including surface is provided having a plurality of transistors formed thereon, where the plurality of transistors include at least one exposed p-type surface region and at least one exposed n-type surface region on the silicon including surface. A plurality of metals are deposited including Yb and Pt to form at least one metal layer on the substrate. The metal layer is heated to induce formation of an inhomogeneous silicide layer including both Ptsilicide and Ybsilicide on the exposed p-type and n-type surface regions. | 03-05-2015 |
Duncan W. Riley, Houston, TX US
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20130100769 | Microseismic Data Acquisition Array and Corresponding Method - Disclosed are various embodiments of methods, devices and systems for performing a microseismic survey. According to some embodiments, microseismic signals are detected at seismic sensor stations deployed in two sets of seismic sensor lines, the seismic sensor lines within each set being substantially parallel to one another and the two sets of seismic sensor lines being mutually orthogonal. According to other embodiments, microseismic signals are detected at seismic sensor stations deployed in a hexagonal pattern. Such sensor geometries offer advantages over linear or radial arrays, including noise reduction, data acquisition flexibility as new wells are added to the survey area, and an improved distribution of data points above points in the subsurface. | 04-25-2013 |
Dwight Riley, Houston, TX US
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20110029693 | RESERVING PCI MEMORY SPACE FOR PCI DEVICES - Embodiments include methods, apparatus, and systems for reserving memory space for Peripheral Component Interconnect (PCI) devices. One embodiment includes a method that determines peripheral devices that are connected to a host computer through a PCI switch or PCI bridge and then presents virtual devices as being connected to the PCI switch or PCI bridge. Bus numbers and memory are reserved for the virtual devices and assigned to PCI devices that are hot plugged to the host computer. | 02-03-2011 |
Horace E. Riley, Arlington, TX US
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20100018218 | Power plant with emissions recovery - A power plant including an air separation unit (ASU) arranged to separate nitrogen, oxygen, carbon dioxide and argon from air and produce a stream of substantially pure liquid oxygen, nitrogen, carbon dioxide and argon; a steam generator, fired or unfired, arranged to combust a fuel, e.g., natural gas, liquefied natural gas, synthesis gas, coal, petroleum coke, biomass, municipal solid waste or any other gaseous, liquid or solid fuel in the presence of air and a quantity of substantially pure oxygen gas to produce an exhaust gas comprising water, carbon dioxide, carbon monoxide, nitrogen oxides, nitrogen, sulfur oxides and other trace gases, and a steam-turbine-generator to produce electricity, a primary gas heat exchanger unit for particulate/acid gas/moisture removal and a secondary heat exchanger arranged to cool the remainder of the exhaust gases from the steam generator. Exhaust gases are liquefied in the ASU thereby recovering carbon dioxide, nitrogen oxides, nitrogen, sulfur oxides, oxygen, and all other trace gases from the steam generator exhaust gas stream. The cooled gases are liquefied in the ASU and separated for sale or re-use in the power plant. Carbon dioxide liquid is transported from the plant for use in enhanced oil recovery or for other commercial use. Carbon dioxide removal is accomplished in the ASU by cryogenic separation of the gases, after directing the stream of liquid nitrogen from the air separation unit to the exhaust gas heat exchanger units to cool all of the exhaust gases including carbon dioxide, carbon monoxide, nitrogen oxides, nitrogen, oxygen, sulfur oxides, and other trace gases. | 01-28-2010 |
Janet Riley, Hideaway, TX US
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20140239500 | INTEGRATED CIRCUIT (IC) HAVING ELECTRICALLY CONDUCTIVE CORROSION PROTECTING CAP OVER BOND PADS - An integrated circuit (IC) die has a top side surface providing circuitry including active circuitry configured to provide a function, including at least one bond pad formed from a bond pad metal coupled to a node in the circuitry. A dielectric passivation layer is over a top side surface of a substrate providing a contact area which exposes the bond pad. A metal capping layer includes an electrically conductive metal or an electrically conductive metal compound over at least the contact area to provide corrosion protection to the bond pad metal, which is in electrical contact with the bond pad metal. The metal capping layer can extend over structures other than the bond pads, such as to cover at least 80% of the area of the IC die to provide structures on the IC die protection from incident radiation. | 08-28-2014 |
John Riley, Spicewood, TX US
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20140169106 | NEGATIVE BITLINE WRITE ASSIST CIRCUIT AND METHOD FOR OPERATING THE SAME - A negative bitline write assist circuit includes a bias capacitor configured to facilitate driving the capacitance of a bitline. The negative bitline write assist circuit may be modularly replicated within a circuit to change the amount of negative voltage on the bitline during write operations. The bitline write assist circuit may be coupled directly to the bitline, removing the need to add a pull-down transistor to the write driver. | 06-19-2014 |
John Riley, Dallas, TX US
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20090071707 | Multilayer substrate with interconnection vias and method of manufacturing the same - A method is provided for manufacturing a multilayer substrate. An insulating layer can have a hole overlying a patterned second metal layer. In turn, the second metal layer can overlie a first metal layer. A third metal layer can be electroplated onto the patterned second metal layer within the hole, the third metal layer extending from the second metal layer onto a wall of the hole. When plating the third metal layer, the first and second metal layers can function as a conductive commoning element. | 03-19-2009 |
John R. Riley, Spicewood, TX US
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20140328112 | MEMORY CELL SUPPLY VOLTAGE REDUCTION PRIOR TO WRITE CYCLE - An integrated circuit device includes a memory cell coupled to a supply voltage line to receive a supply voltage and a voltage control circuit operable to reduce a magnitude of the supply voltage prior to a write cycle to the memory cell. The voltage control circuit includes a first capacitor that is selectively coupled between a supply voltage line and a first reference supply voltage line of the integrated circuit device in anticipation of a write cycle to the memory cell. | 11-06-2014 |
John Reginald Riley, Austin, TX US
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20100165756 | METHODS AND SYSTEMS TO IMPROVE WRITE RESPONSE TIMES OF MEMORY CELLS - Methods and systems to dynamically control state-retention strengths of a plurality of memory cells during a write operation to a subset of the memory cells. Dynamic control may include weakening state-retention strengths of the plurality of memory cells during a write operation to a subset of the memory cells, while preserving state-retention abilities of remaining ones of the plurality of memory cells. Weakening may include adjusting one or more resistances between one or more power supplies and the plurality of memory cells. Dynamic control may be selectively performed on portions of each of the memory cells in response to an input data logic state. Dynamic control may reduce a write contention within the subset of memory cells without disabling state-retention abilities of remaining ones of the plurality of memory cells, and may improve write response times of the memory cells. | 07-01-2010 |
Lance W. Riley, Brownsville, TX US
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20110281339 | System And Method To Create A Traveling Wave Within A Photobiotic Reactor To Enhance Algae Growth - A photobioreactor with a gas input is disclosed herein. The photobioreactor is tilted about an axis of rotation at various angles to provide for various flow patterns of bubbles created by the gas input. The flow patterns may vary, but include: bubble flow; slug or plug flow; churn; annular flow; or wispy annular flow. In certain configurations, a bubble flowing through the photobioreactor may increase algae growth within the reactor. | 11-17-2011 |
Mack Wayne Riley, Austin, TX US
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20080272820 | Circuit to Reduce Transient Current Swings During Mode Transitions of High Frequency/High Power Chips - A method, an apparatus, and a computer program are provided to reduce transient current swings during mode transitions. Traditionally, transient supply voltage fluctuations on a chip account for a large portion of the power supply. The number of series inductances and resistances are typically minimized, while adding large decoupling capacitances between the supply voltage and ground. However, situations may arise where reduction of series inductances and resistances cannot be accomplished. Therefore, to assist in controlling the transient current swings, reduction of clocking frequencies are performed in a controlled manner. | 11-06-2008 |
20090058503 | Method to Bridge a Distance Between eFuse Banks That Contain Encoded Data - An eFuse system that includes a mechanism that bridges banks of eFuses and allows the banks of eFuses to be placed any distance from each other. The bridging of the eFuse banks is transparent to compression and encode programming algorithm and hardware decode mechanisms. Thus, by using the mechanism for bridging gaps between eFuse banks, an eFuse subsystem with several banks distributed on an integrated circuit chip appears to be a single large eFuse bank to the encode/decode mechanisms of the integrated circuit. Additionally, with this mechanism, eFuse banks can be easily added or deleted. | 03-05-2009 |
20090119552 | Dynamic Frequency Scaling Sequence for Multi-Gigahertz Microprocessors - The present invention provides for reducing current spikes in a circuit when changing clocking frequencies. A first frequency is applied to a clock distribution network. A final frequency is selected. The first frequency is applied to a logic element over the clock distribution network. A hold signal is applied to the logic element. The clock rate of the clock distribution network is changed from the first frequency to the final frequency. The hold signal is unapplied to the logic element. | 05-07-2009 |
20090121747 | Maintaining Circuit Delay Characteristics During Power Management Mode - A system and method for maintaining circuit delay characteristics during power management mode. The method for maintaining circuit delay characteristics during power management mode continually toggles the clock distribution circuits at a frequency sufficiently low that it does not significantly impact chip power dissipation. The clock frequency used to toggle the clock distribution circuits is high enough to minimize the asymmetrical stress on the clock buffer transistors so that both P and N device characteristics equally change over time. | 05-14-2009 |
20090222251 | Structure For An Integrated Circuit That Employs Multiple Interfaces - A design structure for a integrated circuit interfacing system may be embodied in a machine readable medium for designing, manufacturing or testing a integrated circuit. In one embodiment, the design structure specifies an integrated circuit that includes multiple interfaces. The design structure may specify that each of the interfaces couples to a respective set of registers or storage elements on the integrated circuit. The design structure may also specify a bridge circuit on the integrated circuit that switchably couples the two interfaces together such that one interface may communicate with the registers that associate with that interface as well as the registers that associate with the other interface. | 09-03-2009 |
20120084603 | EVALUATION OF MULTIPLE INPUT SIGNATURE REGISTER RESULTS - Provided is an apparatus that includes a processor comprising a plurality of processing cores and a corresponding plurality of LBIST modules, each LBIST module corresponding to one of the plurality of processing cores; a MISR read out connection, comprising a compare value register, a plurality of MISR registers equal in number to the plurality of cores, each MISR register corresponding to one of the plurality of processing cores and a corresponding plurality of XOR logic gates, each XOR logic gate coupled to the compare value register and a corresponding one of the MISR registers and configured to signal whether or not the event the compare value register and the corresponding MISR register match and logic, stored and executed on the processor, for transmitting the signals generated by the plurality of XOR logic gates. | 04-05-2012 |
Mary Frances Riley, Houston, TX US
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20140366889 | Facial Structure Stabilization Methods and Apparatus - Certain embodiments disclosed herein are directed to methods and apparatus for extended support and maintenance of facial structures by molding and maintaining the skin and underlying fat, fillers and muscle with supportive soft silicone gel pads that apply desired pressure to the structures underlying the skin In one embodiment, a facial support apparatus is provided that includes a pair of ear connection members connected to at least one pair of facial region support members, wherein each facial region support member comprises an inner skin facing surface that is releasably self-adhesive to a user's skin. | 12-18-2014 |
Nolan Riley, Rosharon, TX US
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20120169363 | Production Integrated Circuit Test Handler Using Microcontroller Reading a Thermal Diode of a Device Under Test for Temperature Control - Production test of integrated circuit face thermal management challenges with higher power devices. Current production handlers do not have adequate thermal management characteristics. This invention employs thermal diodes on each device under test and a closed loop microprocessor controlled feedback system for thermal control during production test. | 07-05-2012 |
Nolan B. Riley, Rosharon, TX US
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20140167795 | ACTIVE FEEDBACK SILICON FAILURE ANALYSIS DIE TEMPERATURE CONTROL SYSTEM - Fault analysis of high power integrated circuits face thermal management challenges. This invention employs thermal diodes incorporated in the device undergoing fault analysis, and a closed loop microprocessor controlled feedback system for thermal control during test and fault analysis. | 06-19-2014 |
Paul L. Riley, Houston, TX US
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20150275608 | HORIZONTAL VERTICAL DEEPWATER TREE - A subsea hydrocarbon production system comprises a tubing hanger which is positioned at an upper end of a well bore, a tubing string which extends from the tubing hanger into the well bore and is fluidly connected to the tubing hanger production bore, and a christmas tree which is positioned above the tubing hanger. The christmas tree comprises a production bore which is fluidly connected to the tubing hanger production bore, a production outlet which is connected to the production bore, a first barrier element which is positioned in the production outlet, and a first closure device which is positioned in the production bore above the production outlet, and a outlet. In this manner access from above the christmas tree through the production bore does not require passage through a barrier element. | 10-01-2015 |
Shannon T. Riley, Pearland, TX US
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20120215563 | ADMINISTRATION OF BUNDLED HEALTH CARE PRICING - A system and process for administration of bundled health care pricing, packaged health care, case rates, or episodes of care. The system may include software to automate administrative functions. The disclosure relates to processes including the steps of distributing payments, calculating savings, and processing claims associated with bundled health care pricing. | 08-23-2012 |
Stephen Riley, Spring, TX US
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20080251710 | Method and Apparatus for Determining Silicon Content of the Earth Formations in Cased Well Bores - Measurements made with a pulsed neutron source and three or more gamma ray detectors are used to estimate the silicon and oxygen content of earth formations. | 10-16-2008 |
20090252288 | APPARATUS AND METHOD FOR DETECTING GAMMA RAY RADIATION - An apparatus for detecting gamma ray (GR) radiation having a plurality of detector cells arranged in an array is disclosed. Each cell includes a housing having an aperture, the housing comprising a GR absorbing material, and a GR detector disposed within the housing such that external gamma rays are received at the GR detector via the aperture. The apertures of each cell are aligned. | 10-08-2009 |
Terrence J. Riley, Richardson, TX US
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20080315324 | METHOD TO OBTAIN UNIFORM NITROGEN PROFILE IN GATE DIELECTRICS - The present invention, in one aspect, provides a method of manufacturing a microelectronics device | 12-25-2008 |
Timothy Riley, Brazona, TX US
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20120024410 | Tailpipe Customization - A tailpipe tip for inserting into a tailpipe opening comprising: a perimeter, where said perimeter fits into the tailpipe opening; an etched design within the perimeter, where said design allows for the movement of air there through; and a means to attach the tip to the tailpipe opening. In one exemplary embodiment, the means to attach includes bolts. | 02-02-2012 |
20140326350 | TAILPIPE CUSTOMIZATION - The present invention relates to a tailpipe tip assembly for inserting into a tailpipe opening comprising: a sleeve, where the sleeve includes a first opening at a first end and a fitting portion at a second end; a tailpipe tip, where the tailpipe tip includes a perimeter and the perimeter fits into an inner edge of the first opening of the sleeve and the fitting portion inserts into the tailpipe opening; and an etched design within the perimeter, where said design allows for the movement of air there through. | 11-06-2014 |
Walter Riley, Richardson, TX US
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20120303294 | System and Method for Developing Fault Diagnostics and Failure Prognosis of Spline Wear in a Drive System - A diagnosis system and method to detect wear between a first set of teeth of a first gear and a second set of teeth of a second intermeshing gear, the diagnosis system having a first target associated with the first set of teeth, a second target associated with the second set of teeth, a first sensor adapted to detect the location of the first target, a second sensor adapted to detect the location of the second target, and a processing system in data communication with the first sensor and the second sensor, the processing system being adapted to process a spatial relationship between the first target relative to the second target after a time lapse of rotation between the first set of teeth and the second set of teeth. | 11-29-2012 |
20130032286 | Method of Making a Composite Article Having an Internal Passageway - In one particular embodiment, a method for making a fiber-reinforced, composite article having an internal passageway includes providing a layup tool, fiber placing a base layup onto the layup tool, and generating a groove in the base layup. The method further includes placing a mandrel in the groove, fiber placing a top layup onto the base layup and the mandrel, curing the base layup and the top layup, and removing the mandrel from the base layup and the top layup. In another particular embodiment, the mandrel is replaced with a non-removable tube. | 02-07-2013 |
Walter W. Riley, Richardson, TX US
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20140144287 | AIRCRAFT GEARBOX GASEOUS COOLING SYSTEM - The cooling system of the present disclosure is configured to promote heat transfer in a gearbox. The system can include a container for housing a gas, the gas having a sufficient percentage of helium so that once the gas is introduced into the gearbox, the helium increases heat transfer from the heat generating components of the gearbox. The method of the present disclosure can include selectively introducing the helium gas into the gearbox. | 05-29-2014 |
Walter West Riley, Richardson, TX US
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20130184959 | SYSTEM AND METHOD OF MEASURING AND MONITORING TORQUE IN A ROTORCRAFT DRIVE SYSTEM - A method of optimizing an operation of a rotorcraft includes measuring actual usage of the tail rotor drive shaft during operation of the rotorcraft, the actual usage including at least a torque measurement. The method further includes a step of adjusting a life of the tail rotor drive shaft based upon the measuring of the actual usage. Another method of the present disclosure includes determining a main rotor mast torque by measuring a tail rotor drive shaft torque and deriving a main rotor mast torque by considering the measured tail rotor drive shaft torque and a total torque output of an engine. A system of the present disclosure is configured for determining the main rotor mast torque in part by measuring the tail rotor torque. | 07-18-2013 |
20140026702 | DIRECT DRIVE ROTATION DEVICE FOR PASSIVELY MOVING FLUID - The device is configured for moving a fluid within a gearbox. In one illustrative embodiment, the device includes a base portion coupled to a rotatable member within the gearbox. An inlet portion of the device is configured to draw the fluid from a reservoir portion of the gearbox. The device is configured to utilize a centrifugal force for moving the fluid from the inlet portion toward the base portion along an interior surface of a conical portion. In another illustrative embodiment, the device includes a conical portion having an external threaded portion configured to capture a fluid during a rotation of the device. In such an embodiment, the threaded portion is configured to utilize a centrifugal force for moving the fluid captured by the threaded portion along an exterior surface of the conical portion. | 01-30-2014 |
20140030110 | DIRECT DRIVE ROTATION DEVICE FOR PASSIVELY MOVING FLUID - The device is configured for moving a fluid within a gearbox. In one illustrative embodiment, the device includes a base portion coupled to a rotatable member within the gearbox. An inlet portion of the device is configured to draw the fluid from a reservoir portion of the gearbox. The device is configured to utilize a centrifugal force for moving the fluid from the inlet portion toward the base portion along an interior surface of a conical portion. In another illustrative embodiment, the device includes a conical portion having an external threaded portion configured to capture a fluid during a rotation of the device. In such an embodiment, the threaded portion is configured to utilize a centrifugal force for moving the fluid captured by the threaded portion along an exterior surface of the conical portion. | 01-30-2014 |
20140263853 | Methods Utilizing Cold Spray Techniques for Repairing and Protecting Rotary Components of Aviation Propulsion Systems - A method of repairing a component comprises identifying a non-compliant surface of the component, wherein the non-compliant surface is not within an allowable tolerance, cold spraying a powder comprising a metal onto the non-compliant surface, and forming a coating comprising the metal over the non-compliant surface, wherein an outer surface of the coating is within an allowable tolerance. In an embodiment, the method of repairing an outer component further comprises machining the outer surface of the coating. In an embodiment, the component is a shaft, a rotor mast, an input quill, or a bearing. In an embodiment, the component contains electronic equipment during the cold spraying, and wherein the cold spraying does not damage the electronic equipment. In an embodiment, the component is repaired without subjecting the component to a hydrogen embrittlement bake. | 09-18-2014 |
20150068845 | DIRECT DRIVE ROTATION DEVICE FOR PASSIVELY MOVING FLUID - The device is configured for moving a fluid within a gearbox. In one illustrative embodiment, the device includes a base portion coupled to a rotatable member within the gearbox. An inlet portion of the device is configured to draw the fluid from a reservoir portion of the gearbox. The device is configured to utilize a centrifugal force for moving the fluid from the inlet portion toward the base portion along an interior surface of a conical portion. In another illustrative embodiment, the device includes a conical portion having an external threaded portion configured to capture a fluid during a rotation of the device. In such an embodiment, the threaded portion is configured to utilize a centrifugal force for moving the fluid captured by the threaded portion along an exterior surface of the conical portion. | 03-12-2015 |
20150211544 | DIRECT DRIVE ROTATION DEVICE FOR PASSIVELY MOVING FLUID - The device is configured for moving a fluid within a gearbox. In one illustrative embodiment, the device includes a base portion coupled to a rotatable member within the gearbox. An inlet portion of the device is configured to draw the fluid from a reservoir portion of the gearbox. The device is configured to utilize a centrifugal force for moving the fluid from the inlet portion toward the base portion along an interior surface of a conical portion. In another illustrative embodiment, the device includes a conical portion having an external threaded portion configured to capture a fluid during a rotation of the device. In such an embodiment, the threaded portion is configured to utilize a centrifugal force for moving the fluid captured by the threaded portion along an exterior surface of the conical portion. | 07-30-2015 |
William S. Riley, Lubbock, TX US
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20090078217 | Hydraulic system for operating the gate on a chute for immobilizing animals - A hydraulic system for operating the front gate of a chute for immobilizing an animal where the gate can be unlatched/opened or closed/latched in a single operation. The system is comprised of a gate cylinder for opening and closing the gate and a latch cylinder for unlatching and latching the gate wherein the cylinders are interconnected by respective short and longer lengths of hose whereby hydraulic fluid will reach and actuate one of the cylinders (i.e. unlatches the gate or closes the gate) before it flows to and actuates the other cylinder (e.g. opens the gate or latches the gate). | 03-26-2009 |