Patent application number | Description | Published |
20080223287 | Plasma enhanced ALD process for copper alloy seed layers - A method of forming a copper alloy seed layer comprises providing a substrate in a reactor, performing a first ALD process to fabricate an alloy metal layer on the substrate, wherein the first ALD process uses an alloy metal precursor selected from a group of specific alloy metal precursors, performing a second ALD process to fabricate a copper metal layer on the alloy metal layer, wherein the second ALD process uses a copper metal precursor selected from a group of specific copper metal precursors, and annealing the alloy metal layer and the copper metal layer to form a graded Cu-alloy layer. | 09-18-2008 |
20080237861 | Novel Fluorine-Free Precursors and Methods for the Deposition of Conformal Conductive Films for Nanointerconnect Seed and Fill - A method including introducing a fluorine-free organometallic precursor in the presence of a substrate; and forming a conductive layer including a moiety of the organometallic precursor on the substrate according to an atomic layer or chemical vapor deposition process. A method including forming an opening through a dielectric layer to a contact point; introducing a fluorine-free copper film precursor and a co-reactant; and forming a copper-containing seed layer in the opening. A system including a computer including a microprocessor electrically coupled to a printed circuit board, the microprocessor including conductive interconnect structures formed from fluorine-free organometallic precursor. | 10-02-2008 |
20080242880 | COPPER PRECURSORS FOR CVD/ALD/DIGITAL CVD OF COPPER METAL FILMS - Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD). | 10-02-2008 |
20080311400 | NANOTUBE GROWTH AND DEVICE FORMATION - An apparatus and method for forming catalyst particles to grow nanotubes is disclosed. In addition, an apparatus and method for forming nanotubes using the catalytic particles is also disclosed. The particles formed may have different diameters depending upon how they are formed. Once formed, the particles are deposited on a substrate. Once deposited, the mobility of the particles is restricted and nanotubes and/or nanotube portions are grown on the particles. Nanotube portions having different diameters may be formed and the portions may be connected to form nanotubes with different diameters along the length of the nanotube. | 12-18-2008 |
20090022958 | AMORPHOUS METAL-METALLOID ALLOY BARRIER LAYER FOR IC DEVICES - A method for fabricating an amorphous metal-metalloid alloy layer for use in an IC device comprises providing a substrate in a reactor that includes a dielectric layer having a trench, pulsing a metal precursor into the reactor to deposit within the trench, wherein the metal precursor is selected from the group consisting of CpTa(CO) | 01-22-2009 |
20090200524 | ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF - This invention relates to organometallic compounds having the formula L | 08-13-2009 |
20090209777 | ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF - This invention relates to organometallic compounds having the formula (L | 08-20-2009 |
20090253270 | DEPOSITION METHOD FOR HIGH-K DIELECTRIC MATERIALS - A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound. | 10-08-2009 |
20100022083 | CARBON NANOTUBE INTERCONNECT STRUCTURES - A method including forming an interconnect of single-walled carbon nanotubes on a sacrificial substrate; transferring the interconnect from the sacrificial substrate to a circuit substrate; and coupling the interconnect to a contact point on the circuit substrate. A method including forming a nanotube bundle on a circuit substrate between a first contact point and a second contact point, the nanotube defining a lumen therethrough; filling a portion of a length of the lumen of the nanotube bundle with an electrically conductive material; and coupling the electrically conductive material to the second contact point. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor including a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures including carbon nanotube bundles. | 01-28-2010 |
20100098960 | MAGNETIC INSULATOR NANOLAMINATE DEVICE FOR INTEGRATED SILICON VOLTAGE REGULATORS - A magnetic insulator nanolaminate device comprises a metal magnetic layer formed on a substrate, an insulating layer formed on the metal magnetic layer, wherein the insulating layer is formed by nitriding a portion of the metal magnetic layer, a chelating group layer formed on the insulating layer, and a metal seed layer bonded to the chelating group layer. The magnetic insulator nanolaminate device may be formed by depositing a metal layer on a substrate, converting a portion of the metal layer into an insulating layer using a nitridation process, and depositing a metal seed layer onto the insulating layer using a metal immobilization process, wherein the metal seed layer enables the deposition of a metal layer onto the insulating layer. | 04-22-2010 |
20100140717 | TUNABLE GATE ELECTRODE WORK FUNCTION MATERIAL FOR TRANSISTOR APPLICATIONS - Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film. | 06-10-2010 |
20100166981 | SURFACE CHARGE ENHANCED ATOMIC LAYER DEPOSITION OF PURE METALLIC FILMS - A method including applying an electric charge to a substrate in a chamber; introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including applying a removable electric charge to a substrate; in the presence of the applied electric charge, introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent with an externally applied electric charge. | 07-01-2010 |
20100230817 | Using Unstable Nitrides to Form Semiconductor Structures - Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place. | 09-16-2010 |
20110272811 | USING UNSTABLE NITRIDES TO FORM SEMICONDUCTOR STRUCTURES - Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place. | 11-10-2011 |