Patent application number | Description | Published |
20100155581 | LASER SCANNING UNIT AND IMAGE-FORMING APPARATUS HAVING THE SAME - A laser scanning unit and an image-forming apparatus employing the laser scanning unit. The laser scanning unit includes an optical source to irradiate a light beam, a deflector to deflect the irradiated light beam to a photosensitive body, an optical imaging device on which the light beam deflected from the deflector is incident and which forms an image on the photosensitive body, and an optical reflective device to deflect the light beam transmitted through the optical imaging device toward the optical imaging device, wherein the light beam incident on the optical imaging device includes P polarized light and S polarized light, such that the proportion of P polarized light is greater than the proportion of S polarized light. | 06-24-2010 |
20100166464 | LIGHT SCANNING UNIT CAPABLE OF COMPENSATING FOR ZIGZAG ERROR, IMAGING APPARATUS HAVING THE SAME, AND METHOD OF COMPENSATING FOR ZIGZAG ERROR OF THE LIGHT SCANNING UNIT - Provided are a light scanning unit capable of compensating for a zigzag error, an imaging apparatus having the same, and a method of compensating for a zigzag error of the light scanning unit. The light scanning unit may scan light beams using an oscillation mirror configured to rotatably oscillate. The light scanning unit may deflect light beams in a sub-scan direction in synchronization with the rotatable oscillation of the oscillation mirror, thereby compensating for a zigzag error caused by reciprocative scanning of the oscillation mirror. | 07-01-2010 |
20100182393 | LIGHT SCANNING UNIT AND IMAGE FORMING APPARATUS INCLUDING THE SAME - A light scanning unit and an image forming apparatus having the same. The light scanning unit to form an electrostatic latent image corresponding to image information on a photosensitive body may include a light source, a deflector to deflect light generated from the light source in a main scanning direction, an imaging lens to focus deflected light to the photosensitive body, and at least a reflection mirror to change a traveling direction of light. A deviation of light quantity generated in a main scanning direction by a light quantity ratio generated by internal absorption of the imaging lens and a light quantity ratio generated by a polarization state of light may be compensated for by the reflection mirror. | 07-22-2010 |
20130196360 | MICROFLUIDIC DEVICE AND CONTROL METHOD THEREOF - A microfluidic device and control method thereof are provided. The control method of the microfluidic device includes detecting a background signal from a chamber in which a reaction product formed by combining an analyte and a marking material is not accommodated, detecting a detection signal from a chamber in which the reaction product is accommodated, and compensating for the detection signal using the background signal. | 08-01-2013 |
Patent application number | Description | Published |
20090154065 | Solid electrolytic capacitor and method of manufacturing the same - Provided is a solid electrolytic capacitor including a capacitor element with a positive polarity; an anode wire of which one end is inserted into the capacitor element and the other end projects outward from the capacitor element; a cathode extraction layer formed on the capacitor element; a plurality of conductive bumps formed on the cathode extraction layer; a molding portion formed to surround the capacitor element and exposing the projecting end of the anode wire and ends of the conductive bumps; an anode lead terminal provided on the molding portion so as to be electrically connected to the exposed end of the anode wire; and a cathode lead terminal provided on the molding portion so as to be electrically connected to the exposed ends of the conductive bumps. | 06-18-2009 |
20090154066 | Solid electrolytic capacitor and method of manufacturing the same - Provided is a solid electrolytic capacitor including a capacitor element with a positive polarity; an anode wire inserted and connected to a lower portion of the capacitor element; a cathode extraction layer formed on the capacitor element; an anode lead frame provided on one side of the lower surface of the capacitor element so as to be electrically insulated from the cathode extraction layer, the anode lead frame having an insertion portion into which a projecting lower portion of the anode wire is inserted; a cathode lead frame provided on the other side of the lower surface of the capacitor element so as to be electrically connected to the cathode extraction layer; a molding portion formed to surround the capacitor element and exposing the lower end surface of the anode wire, the lower surface of the anode lead frame, and the lower surface of the cathode lead frame; an anode lead terminal provided on the molding portion so as to be electrically connected to the lower end surface of the anode wire and the lower surface of the anode lead frame; and a cathode lead terminal provided on the molding portion so as to be electrically connected to the lower surface of the cathode lead frame. | 06-18-2009 |
20090154068 | Solid electrolytic capacitor and method of manufacturing the same - Provided is a solid electrolytic capacitor including a capacitor element with a positive polarity; an anode wire of which one side is inserted into the capacitor element and the other side projects outward from the capacitor element; a cathode extraction layer formed on the capacitor element; a plurality of conductive bumps formed on the cathode extraction layer; an anode lead frame fixed to the side of the capacitor element, where the anode wire projects outward, and having an insertion portion into which the projecting end of the anode wire is inserted; a molding portion formed to surround the capacitor element and exposing the projecting end of the anode wire, the outer surface of the anode lead frame, and ends of the conductive bumps; an anode lead terminal provided on the molding portion so as to be electrically connected to the exposed end of the anode wire and the anode lead frame; and a cathode lead terminal provided on the molding portion so as to be electrically connected to the exposed ends of the conductive bumps. | 06-18-2009 |
20100115746 | SOLID ELECTROLYTIC CAPACITOR AND METHOD OF MANUFACTURING THE SAME - Provided is a solid electrolytic capacitor including a capacitor element with a positive polarity; an anode wire of which one side is inserted into the capacitor element and the other side projects outward from the capacitor element; a cathode extraction layer formed on the capacitor element; a plurality of conductive bumps formed on the cathode extraction layer; an anode lead frame fixed to the side of the capacitor element, where the anode wire projects outward, and having an insertion portion into which the projecting end of the anode wire is inserted; a molding portion formed to surround the capacitor element and exposing the projecting end of the anode wire, the outer surface of the anode lead frame, and ends of the conductive bumps; an anode lead terminal provided on the molding portion so as to be electrically connected to the exposed end of the anode wire and the anode lead frame; and a cathode lead terminal provided on the molding portion so as to be electrically connected to the exposed ends of the conductive bumps. | 05-13-2010 |
20140254067 | TANTALUM CAPACITOR - Disclosed herein is a tantalum capacitor capable of improving equivalent series resistance (ESR) characteristic by increasing the bond between a tantalum wire and a tantalum powder. The tantalum capacitor according to the present invention includes: a tantalum wire; a tantalum powder having embedded a front end of the tantalum wire and then being sintered; and a rough part formed on a surface of the tantalum wire so as to strengthen a bond between the tantalum wire and the tantalum powder. | 09-11-2014 |
Patent application number | Description | Published |
20110246496 | INFORMATION SEARCH METHOD AND INFORMATION PROVISION METHOD BASED ON USER'S INTENTION - Disclosed are a method for searching information based on user's intention and a method for providing information. The method for searching information provides an editor meeting searcher's intention detected using analysis results for keywords and searches contents having metadata associated with metadata input through the editor. As a result, a search may be formed by detecting searcher's intention from information input by a searcher, inducing a detailed metadata input based on the detected intention, and using the input metadata. | 10-06-2011 |
20110313997 | SYSTEM AND METHOD FOR PROVIDING A CONSOLIDATED SERVICE FOR A HOMEPAGE - A total homepage service providing system includes an information provider information administration unit configured to register and administrate information of an information appliance of an information provider and information of the information provider; a homepage generation unit configured to automatically generate a homepage which can be displayed on the information appliance of the information provider and an information appliance of an information user, using metadata received from the information appliance of the information provider; a homepage registration and administration unit configured to store a file of the generated homepage, and register and administrate the homepage; and an index generation and administration unit configured to generate one or more homepage indexes for an information search, using keywords extracted and classified from the generated homepage, and administrate the generated homepage indexes. | 12-22-2011 |
20120030476 | SYSTEM AND METHOD FOR AUTOMATICALLY COLLECTING OPINIONS - A system and a method for automatically collecting opinions are provided. The method for automatically collecting opinions according to the present invention comprises the steps of: distributing, to user terminals, content containing actual metadata corresponding to metadata items required for executing an opinion-collecting service program; and extracting opinions of users contained in the reply content received from user terminals, and compiling statistics with the extracted opinions. The present invention enables an automatic online collection of user opinions regarding voting, public opinion polls, surveys and other feedback via PCs or portable communication equipment, and automatically compiles statistics with the collected user opinions. | 02-02-2012 |
20120271718 | METHOD AND SYSTEM FOR PROVIDING BACKGROUND ADVERTISEMENT OF VIRTUAL KEY INPUT DEVICE - Provided is a method for providing a background advertisement of a virtual key input device, which provides a background advertisement to a virtual key input device on an information communication terminal supporting a touch user interface (UTI). The method includes: generating a virtual key input unit; providing an advertisement contents skin as a background image of the virtual key input unit; and offering a reward in compensation for user's reading an advertisement. | 10-25-2012 |
20120271812 | METHOD AND SYSTEM FOR PROVIDING USER-CUSTOMIZED CONTENTS - A method for providing user-customized contents, includes: receiving contents order information from a user and constructing a contents order information DB; opening the contents order information DB; receiving contents corresponding to the contents order information from a contents provider; and providing the received contents in a user-customized form. | 10-25-2012 |
20120274658 | METHOD AND SYSTEM FOR PROVIDING BACKGROUND CONTENTS OF VIRTUAL KEY INPUT DEVICE - Provided is a method for providing background contents of a virtual key input device, which provides a background image to a virtual key input device on an information communication terminal supporting a touch user interface (UTI). The method includes: selecting a virtual key input unit in the information communication terminal; generating the selected virtual key input unit into a transparent skin input unit; selecting background contents of the virtual key input unit, and generating a background skin based on the selected background contents; and combining the transparent skin input unit and the background skin. | 11-01-2012 |
20140365496 | MENU CONFIGURATION METHOD AND SYSTEM OF SMART DEVICE - The present invention relates to a method and a system for configuring a menu in a smart device, which configure a menu of an application in a smart device, and the method of configuring a menu includes: collecting, by a smart device, information about one or more of a keyword, a title, and a tag of an application, and determining the collected information as a keyword for searching for a semantic menu, classifying the keyword determined by the smart device as a semantic menu, and displaying the classified semantic menu on the smart device. According to the present invention, there is an effect in that menu operability of a user and. user convenience in searching for an application may be improved, and a user may manage an application based on User experience (UX). | 12-11-2014 |
Patent application number | Description | Published |
20090250429 | Methods of Forming Dual-Damascene Metal Wiring Patterns for Integrated Circuit Devices and Wiring Patterns Formed Thereby - Methods of forming dual-damascene metal wiring patterns include forming a first metal wiring pattern (e.g., copper wiring pattern) on an integrated circuit substrate and forming an etch-stop layer on the first metal wiring pattern. These steps are followed by the steps of forming an electrically insulating layer on the etch-stop layer and forming an inter-metal dielectric layer on the electrically insulating layer. The inter-metal dielectric layer and the electrically insulating layer are selectively etched in sequence to define an opening therein that exposes a first portion of the etch-stop layer. This opening may include a trench and a via hole extending downward from a bottom of the trench. A first barrier metal layer is formed on a sidewall of the opening and directly on the first portion of the etch-stop layer. A portion of the first barrier metal layer is selectively removed from the first portion of the etch-stop layer. The first portion of the etch-stop layer is then selectively etched for a sufficient duration to expose a portion of the first metal wiring pattern. A second metal wiring pattern is formed in the opening in order to complete a dual-damascene structure. | 10-08-2009 |
20120193322 | Methods of Forming Dual-Damascene Metal Wiring Patterns for Integrated Circuit Devices and Wiring Patterns Formed Thereby - Methods of forming dual-damascene metal wiring patterns include forming a first metal wiring pattern (e.g., copper wiring pattern) on an integrated circuit substrate and forming an etch-stop layer on the first metal wiring pattern. These steps are followed by the steps of forming an electrically insulating layer on the etch-stop layer and forming an inter-metal dielectric layer on the electrically insulating layer. The inter-metal dielectric layer and the electrically insulating layer are selectively etched in sequence to define an opening therein that exposes a first portion of the etch-stop layer. This opening may include a trench and a via hole extending downward from a bottom of the trench. A first barrier metal layer is formed on a sidewall of the opening and directly on the first portion of the etch-stop layer. A portion of the first barrier metal layer is selectively removed from the first portion of the etch-stop layer. The first portion of the etch-stop layer is then selectively etched for a sufficient duration to expose a portion of the first metal wiring pattern. A second metal wiring pattern is formed in the opening in order to complete a dual-damascene structure. | 08-02-2012 |
20120220120 | METHOD FOR FABRICATING BURIED BIT LINE IN SEMICONDUCTOR DEVICE - A method for fabricating a buried bit line in a semiconductor device includes forming a liner oxide layer over the entire surface of a substrate having bodies isolated by a trench, selectively etching the liner oxide layer contacted with one side surface of the trench to a given depth, forming a sacrifice layer at a larger height than an etched surface of the liner oxide layer wherein the sacrifice layer partially fills the trench to the larger height, forming a liner nitride layer on sidewalls of the trench over the sacrifice layer, removing the sacrifice layer to expose a part of a body at the one side surface of the trench, forming a barrier layer along the entire surface of the resultant structure including the liner oxide layer, and forming a buried bit line over the barrier layer to be contacted with the exposed part of the body. | 08-30-2012 |
Patent application number | Description | Published |
20080210995 | Image sensor and method for fabricating the same - An image sensor and a method for fabricating the same are disclosed, in which an impurity implantation layer having a predetermined thickness is formed on a source diffusion layer, thereby controlling a substantial contact point between a contact plug and the source diffusion layer upward from a surface of a semiconductor substrate. As a result, it is possible to minimize a length of an open hole, which is a main channel of the contact plug, so that the open hole has the sufficiently large size, thereby inducing the improvement of the contact quality between the contact plug and the source diffusion layer. Also, in case of the CMOS image sensor, in state the impurity implantation layer having the impurity selectively implanted is formed on the source diffusion layer, the impurity implantation layer is electrically connected with the source diffusion layer. Accordingly, without the additional process such as highly-impurity implantation and formation of salicide layer, it is possible for the source diffusion layer to increase the impurity concentration of impurity therein. Eventually, in case of realizing the image sensor according to the present invention, it is possible to the greatest contact quality between the contact plug and the source diffusion layer. In case of realizing the greatest contact quality between the contact plug and the source diffusion layer with the additional formation of the impurity implantation layer, for example, the source diffusion layer normally performs the function of converting the optical charges generated by the photodiode to voltage constituents. Thus, the completed image sensor according to the present invention realizes the great image quality. | 09-04-2008 |
Patent application number | Description | Published |
20100090093 | Image Sensor and Method For Manufacturing the Same - An image sensor is provided. The image sensor comprises a readout circuitry, a first image sensing device, an interconnection, and a second image sensing device. The readout circuitry is disposed in a first substrate. The first image sensing device is disposed at one side of the readout circuitry of the first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The second image sensing device is disposed over the interconnection. | 04-15-2010 |
20100091154 | Image Sensor and Method For Manufacturing the Same - An image sensor is provided. The image sensor comprises a readout circuitry, an interconnection, an image sensing device and a via plug. The readout circuitry is disposed in a first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The image sensing device is disposed over the interconnection. The via plug is formed at a pixel boundary and electrically connects the image sensing device and the interconnection. | 04-15-2010 |
20100091155 | Image Sensor and Method for Manufacturing the Same - An image sensor is provided. The image sensor comprises a readout circuitry, an interconnection, an insulating layer, an electrode, and an image sensing device. The readout circuitry is disposed in a first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The insulating layer is disposed over the interconnection. The electrode is disposed on the insulating layer. The image sensing device is disposed on the electrode. The electrode and the interconnection provide a capacitive coupling of the image sensing device to the readout circuitry so that a contact formation process to contact the photodiode to the interconnection can be omitted. | 04-15-2010 |
20100148034 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a readout circuitry, an interconnection, an image sensing device, a first conductive-type ion implantation layer, and a via plug. The readout circuitry is formed in a first substrate. The interconnection is formed over the first substrate. The interconnection is electrically connected to the readout circuitry. Then image sensing device is formed over the interconnection. The image sensing device comprises a first conductive-type conductive layer and a second conductive-type conductive layer. The first conductive-type ion implantation layer is formed in a portion of the second conductive-type conductive layer of the image sensing device. The via plug penetrates through the first conductive-type ion implantation layer and the first conductive-type conductive layer to electrically connect the first conductive-type conductive layer to the interconnection. | 06-17-2010 |
Patent application number | Description | Published |
20130052562 | COMPOSITE ANODE FOR A SOLID OXIDE FUEL CELL WITH IMPROVED MECHANICAL INTEGRITY AND INCREASED EFFICIENCY - A composite anode for a solid oxide fuel cell (SOFC), comprising an anode support layer (ASL) of Ni—YSZ and an anode functional layer (AFL) of Ni—GDC, displays enhanced mechanical stability and similar or improved electrical efficiency to that of a Ni—GDC ASL for otherwise identical SOFCs. A SOFC employing the composite anode can be used for power generation at temperatures below 700° C., where the composite anode may include a second AFL of GDC disposed between the Ni—GDC layer and a GDC electrolyte. | 02-28-2013 |
20140272665 | Ceramic Fuel Cell With Enhanced Flatness And Strength And Methods Of Making Same - Ceramic fuel cells having enhanced flatness and strength are disclosed. The fuel cell can include a half-cell having, in order, a patterned layer, an anode support layer and an electrolyte layer. Methods of making ceramic fuel cells are also provided. | 09-18-2014 |
20140302420 | Ceramic Anode Materials for Solid Oxide Fuel Cells - Novel anode materials including various compositions of vanadium-doped strontium titanate (SVT), and various compositions of vanadium- and sodium-doped strontium niobate (SNNV) for low- or intermediate-temperature solid oxide fuel cell (SOFCs). These materials offer high conductivity achievable at intermediate and low temperatures and can be used as the structural support of the SOFC anode and/or as the conductive phase of an anode. A method of making a low- or intermediate-temperature SOFC having an anode layer including SVT or SNNV is also provided. | 10-09-2014 |
20150028259 | PROTON CONDUCTING MEMBRANES FOR HYDROGEN PRODUCTION AND SEPARATION - In one embodiment, a membrane of proton-electron conducting ceramics that is useful for the conversion of a hydrocarbon and steam to hydrogen has a porous support coated with a film of a Perovskite-type oxide. By including the Zr and M in the oxide in place of Ce, the stability can be improved while maintaining sufficient hydrogen flux for efficient generation of hydrogen. In this manner, the conversion can be carried out by performing steam methane reforming (SMR) and/or water-gas shift reactions (WGS) at high temperature, where the conversion of CO to CO | 01-29-2015 |
Patent application number | Description | Published |
20080220373 | Method for forming a photoresist-laminated substrate, method for plating an insulating substrate, method for surface treating of a metal layer of a circuit board, and method for manufacturing a multi layer ceramic condenser using metal nanoparticles aerosol - The present invention relates to a method for forming a photoresist-laminated substrate including: preparing a laminated substrate having an insulating substrate and a metal layer; coating with an aerosol of metal nanoparticles on the metal layer; laminating a photoresist film on the metal layer coated with the aerosol of metal nanoparticles. The method of the present invention is a environmentally friendly method since an aerosol of metal nanoparticles is used, differentiated from the conventional wet process. | 09-11-2008 |
20090298251 | NORMAL PRESSURE AEROSOL SPRAY APPARATUS AND METHOD OF FORMING A FILM USING THE SAME - An aerosol spray apparatus and a method of forming a film using the aerosol spray apparatus are disclosed. The aerosol spray apparatus in accordance with an embodiment of the present invention includes: a carrier gas injection unit, which forms carrier gas by vaporizing liquefied gas and increases the pressure of the carrier gas; an aerosol forming unit, which forms an aerosol by mixing the carrier gas with powder; and a film forming unit, which sprays the aerosol in a normal pressure environment such that the film is formed on the surface of the board. The apparatus can perform a coating process with no restriction of the type and size of powder, simplify the process because the film can be formed in a normal temperature and pressure environment, and control a wide range of film thickness in a short time. | 12-03-2009 |
20100273051 | COMPOSITE ELECTRODE AND METHOD FOR MANUFACTURING THE SAME - A composite electrode and a method for manufacturing the same are disclosed. By using a composite electrode that includes a porous support made of ceramic or metal and a conductive polymer or a metal oxide formed on a surface of the porous support, a capacitor or secondary cell that provides increased charge/discharge capacity and increased energy/output density, as well as high-temperature stability and high reliability, can be manufactured. | 10-28-2010 |
20120111730 | COMPOSITE ELECTRODE AND METHOD FOR MANUFACTURING THE SAME - A composite electrode and a method for manufacturing the same are disclosed. By using a composite electrode that includes a porous support made of ceramic or metal and a conductive polymer or a metal oxide formed on a surface of the porous support, a capacitor or secondary cell that provides increased charge/discharge capacity and increased energy/output density, as well as high-temperature stability and high reliability, can be manufactured. | 05-10-2012 |
20150077904 | SOLID ELECTROLYTIC CAPACITOR AND PRODUCTION METHOD THEREOF - A solid electrolytic capacitor of the present invention includes: a capacitor element having an anode wire inserted in one side surface thereof; a cathode terminal disposed on one side under the capacitor element to be electrically connected to the capacitor element; an anode terminal disposed on the other side under the capacitor element and having a bending portion integrally formed to be inclined to the capacitor element for electrical connection with the anode wire; and a molding portion surrounding the outside of the capacitor element and formed to expose lower surfaces of the cathode terminal and the anode terminal. | 03-19-2015 |
Patent application number | Description | Published |
20080261156 | METHOD OF FORMING A PATTERN IN A SEMICONDUCTOR DEVICE AND METHOD OF FORMING A GATE USING THE SAME - A method of forming a pattern in a semiconductor device is described. A substrate divided into cell and peripheral regions is provided, and an object layer is formed on a substrate. A buffer pattern is formed on the object layer in the cell region along a first direction. A spacer is formed along a sidewall of the buffer pattern in the cell region, and a hard mask layer remains on the object layer in the peripheral region. The buffer layer is removed, and the spacer is separated along a second direction different from the first direction, thereby forming a cell hard mask pattern. A peripheral hard mask pattern is formed in the peripheral region. A minute pattern is formed using the cell and peripheral hard mask patterns in the substrate. Therefore, a line width variation or an edge line roughness due to the photolithography process is minimized. | 10-23-2008 |
20110159443 | METHOD OF FORMING A PATTERN IN A SEMICONDUCTOR DEVICE AND METHOD OF FORMING A GATE USING THE SAME - A method of forming a pattern in a semiconductor device is described. A substrate divided into cell and peripheral regions is provided, and an object layer is formed on a substrate. A buffer pattern is formed on the object layer in the cell region along a first direction. A spacer is formed along a sidewall of the buffer pattern in the cell region, and a hard mask layer remains on the object layer in the peripheral region. The buffer layer is removed, and the spacer is separated along a second direction different from the first direction, thereby forming a cell hard mask pattern. A peripheral hard mask pattern is formed in the peripheral region. A minute pattern is formed using the cell and peripheral hard mask patterns in the substrate. Therefore, a line width variation or an edge line roughness due to the photolithography process is minimized. | 06-30-2011 |
20130230979 | METHOD OF FORMING A PATTERN IN A SEMICONDUCTOR DEVICE AND METHOD OF FORMING A GATE USING THE SAME - A method of forming a pattern in a semiconductor device is described. A substrate divided into cell and peripheral regions is provided, and an object layer is formed on a substrate. A buffer pattern is formed on the object layer in the cell region along a first direction. A spacer is formed along a sidewall of the buffer pattern in the cell region, and a hard mask layer remains on the object layer in the peripheral region. The buffer layer is removed, and the spacer is separated along a second direction different from the first direction, thereby forming a cell hard mask pattern. A peripheral hard mask pattern is formed in the peripheral region. A minute pattern is formed using the cell and peripheral hard mask patterns in the substrate. Therefore, a line width variation or an edge line roughness due to the photolithography process is minimized. | 09-05-2013 |
20150017804 | METHOD OF FORMING A PATTERN IN A SEMICONDUCTOR DEVICE AND METHOD OF FORMING A GATE USING THE SAME - A method of forming a pattern in a semiconductor device is described. A substrate divided into cell and peripheral regions is provided, and an object layer is formed on a substrate. A buffer pattern is formed on the object layer in the cell region along a first direction. A spacer is formed along a sidewall of the buffer pattern in the cell region, and a hard mask layer remains on the object layer in the peripheral region. The buffer layer is removed, and the spacer is separated along a second direction different from the first direction, thereby forming a cell hard mask pattern. A peripheral hard mask pattern is formed in the peripheral region. A minute pattern is formed using the cell and peripheral hard mask patterns in the substrate. Therefore, a line width variation or an edge line roughness due to the photolithography process is minimized. | 01-15-2015 |
Patent application number | Description | Published |
20090166779 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to an image sensor and a method of manufacturing an image sensor. According to embodiments, an image sensor may include a first substrate, a photodiode, and an ion implantation isolation layer. According to embodiments, circuitry including a metal interconnection may be disposed over the first substrate. A photodiode may be provided in a crystalline semiconductor layer bonded to the first substrate, and electrically connected to the metal interconnection. The ion implantation isolation layer may be provided in the photodiode. | 07-02-2009 |
20090166786 | Image Sensor and Method for Manufacturing the Same - An image sensor includes a metal interconnection and readout circuitry over a first substrate, an image sensing device, and an ion implantation isolation layer. The image sensing device is over the metal interconnection, and an ion implantation isolation layer is in the image sensing device. The image sensing device includes first, second and third color image sensing units, and ion implantation contact layers. The first, second and third color image sensing units are stacked in or on a second substrate. The ion implantation contact layers are electrically connected to the first, second and third color image sensing units, respectively. | 07-02-2009 |
20090166789 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a first substrate and a photodiode. A circuitry including a metal interconnection is formed over the first substrate. The photodiode is formed over a first substrate, and contacts the metal interconnection. The circuitry of the first substrate includes a transistor over the first substrate, an electrical junction region at a side of the transistor, and a first conduction type region. The first conduction type region is connected to the metal interconnection and contacts the electrical junction region. | 07-02-2009 |
20090166792 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to an image sensor and a method of forming an image sensor. According to embodiments, an image sensor may include a first substrate and a photodiode. A circuitry including a metal interconnection may be formed on and/or over the first substrate. The photodiode may be formed over a first substrate, and may contact the metal interconnection. The circuitry of the first substrate may include a first transistor, a second transistor, an electrical junction region, and a first conduction type region. The first and second transistors may be formed over the first substrate. According to embodiments, an electrical junction region may be formed between the first transistor and the second transistor. The first conduction type region may be formed at one side of the second transistor, and may be connected to the metal interconnection. | 07-02-2009 |
20140252204 | IMAGE SENSOR - An image sensor is provided. An image sensor can include a plurality of unit pixels. Each of the unit pixels can include a photoelectric converter as a light receiving element. In each unit pixel, a transport switching unit can transport charges in the photoelectric converter to a floating diffusion region, and a first switching unit can selectively connect the floating diffusion region to a first sensing line. A second switching unit can selectively connect the floating diffusion region to a second sensing line, and a first sensing part can be connected to the first sensing line, and a second sensing part can be connected to the second sensing line | 09-11-2014 |