Patent application number | Description | Published |
20090056798 | Thick Film Pastes For Fire Through Applications In Solar Cells - Formulations and methods of making solar cell contacts and cells therewith are disclosed. The invention provides a photovoltaic cell comprising a front contact, a back contact, and a rear contact. The back contact comprises, prior to firing, a passivating layer onto which is applied a paste, comprising aluminum, a glass component, wherein the aluminum paste comprises, aluminum, another optional metal, a glass component, and a vehicle. The back contact comprises, prior to firing, a passivating layer onto which is applied an aluminum paste, wherein the aluminum paste comprises aluminum, a glass component, and a vehicle. | 03-05-2009 |
20090101190 | Solar Cell Contacts Containing Aluminum And At Least One Of Boron, Titanium, Nickel, Tin, Silver, Gallium, Zinc, Indium And Copper - Formulations and methods of making solar cell contacts and cells therewith are disclosed. In general, the invention provides a solar cell comprising a contact made from a mixture wherein, prior to firing, the mixture comprises at least one aluminum source, at least one source of a metal including one or more of boron, titanium, nickel, tin, gallium zinc, indium, and copper, and about 0.1 to about 10 wt % of a glass component. Within the mixture, the overall content of aluminum is about 50 wt % to about 85 wt % of the mixture, and the overall combined content of boron, nickel, tin, silver, gallium, zinc, indium, copper, is about 0.05 to about 40 wt % of the mixture. | 04-23-2009 |
20090220799 | Method Of Making Multilayer Structures Using Tapes On Non-Densifying Substrates - A method of applying a ceramic coating to a substrate comprises laminating one or more layers of a green ceramic tape to a rigid substrate using a tackifying resin to adhere the tape to the substrate. Upon firing, the tackifying resin ensures near zero shrinkage of the tape in the XY plane without usage of elevated pressures or temperatures during lamination of green tape to the substrate. The thermal degradation completion temperature of the tackifying resin is lower than that of the resin binder used in the green tape. | 09-03-2009 |
20100096598 | METHOD OF MAKING SOLAR CELL CONTACTS - Formulations and methods of making solar cells are disclosed. In general, the invention presents a solar cell contact made from a mixture wherein the mixture comprises a solids portion and an organics portion, wherein the solids portion comprises from about 85 to about 99 wt % of silver, and from about 1 to about 15 wt % of a glass component wherein the glass component comprises from about 15 to about 75 mol % PbO, and from about 5 to about 50 mol % SiO | 04-22-2010 |
20100163101 | Thick Film Conductor Formulations Comprising Silver And Nickel Or Silver And Nickel Alloys And Solar Cells Made Therefrom - Formulations and methods of making solar cells and solar cell contacts are disclosed. In general, the invention presents a solar cell contact made from a mixture wherein the mixture comprises a metal portion, which, prior to firing, comprises nickel and silver. | 07-01-2010 |
20100173446 | Layered Contact Structure For Solar Cells - Formulations and methods of making semiconductor devices and solar cell contacts are disclosed. The invention provides a method of making a semiconductor device or solar cell contact including ink-jet printing onto a silicon wafer an ink composition, typically including a high solids loading (20-80 wt %) of glass fit and preferably a conductive metal such as silver. The wafer is then fired such that the glass frit fuses to form a glass, thereby forming a contact layer to silicon. | 07-08-2010 |
20110169108 | Hot-Melt Sealing Glass Compositions And Methods Of Making And Using The Same - Hot-melt sealing glass compositions that include one or more glass frits dispersed in a polymeric binder system. The polymeric binder system is a solid at room temperature, but melts at a temperature of from about 35° C. to about 90° C., thereby forming a flowable liquid dispersion that can be applied to a substrate (e.g., a cap wafer and/or a device wafer of a MEMS device) by screen printing. Hot-melt sealing glass compositions according to the invention rapidly re-solidify and adhere to the substrate after being deposited by screen printing. Thus, they do not tend to spread out as much as conventional solvent-based glass frit bonding pastes after screen printing. And, because hot-melt sealing glass compositions according to the invention are not solvent-based systems, they do not need to be force dried after deposition. | 07-14-2011 |
20110186787 | Electrically Conductive Polymeric Compositions, Contacts, Assemblies and Methods - Electrically conductive polymeric compositions adapted for use in forming electronic devices are disclosed. The compositions are thermally curable at temperatures less than about 250° C. Compositions are provided which may be solvent-free and so can be used in processing or manufacturing operations without solvent recovery concerns. The compositions utilize (i) fatty acid modified epoxy acrylate and/or methacrylate monomer(s) and/or oligomer(s), (ii) fatty acid modified polyester acrylate and/or methacrylate monomer(s) and/or oligomer(s), or combinations of (i) and (ii). Also described are electronic assemblies such as solar cells using the various compositions and related methods. | 08-04-2011 |
20120006393 | Dielectric Coating For Single Sided Back Contact Solar Cells - A dielectric coating material system for use in a single-sided back contact solar cell is disclosed. The material system serves to electrically isolate electrodes of opposite polarity types on the same side of a silicon-based solar cell, and includes titanium and phosphorus. | 01-12-2012 |
20120125428 | ALUMINUM-BORON SOLAR CELL CONTACTS - Formulations and methods of making solar cells are disclosed. In general, the invention provides a solar cell comprising a contact made from a mixture wherein, prior to firing, the mixture comprises at least one aluminum source, at least one boron source, and about 0.1 to about 10 wt % of a glass component. Within the mixture, the overall content of aluminum is about 50 wt % to about 85 wt % of the mixture, and the overall content of boron is about 0.05 to about 20 wt % of the mixture. | 05-24-2012 |
20120138142 | LEAD FREE SOLAR CELL CONTACTS - Formulations and methods of making solar cells are disclosed. In general, the invention presents a solar cell contact made from a mixture wherein the mixture comprises a solids portion and an organics portion, wherein the solids portion comprises from about 85 to about 99 wt % of a metal component, and from about 1 to about 15 wt % of a lead-free glass component. Both front contacts and back contacts arc disclosed. | 06-07-2012 |
20120174974 | Oxides And Glasses For Use With Aluminum Back Solar Cell Contacts - Solar cell contacts having good electrical performance are made by a process involving: (a) providing a silicon wafer substrate; (b) providing a paste comprising: (i) aluminum, (ii) glass frit, and (iii) a separate and distinct amount of at least one oxide, such that, together with the aluminum, the glass frit and oxide forms a paste having an exothermic reaction peak, at a temperature of at least 660° C. to less than 900° C., (c) applying the paste to the silicon wafer substrate to form a coated substrate, and (d) firing the coated substrate for a time and at a temperature sufficient to sinter the aluminum and fuse the glass frit and oxide. | 07-12-2012 |
20120178207 | Vanadium, Cobalt And Strontium Additives For Use In Aluminum Back Solar Cell Contacts - Al pastes with additives of Co, Sr, V, compounds thereof and combinations thereof improve both the physical integrity of a back contact of a silicon solar cell as well as the electrical performance of a cell with such a contact. | 07-12-2012 |
20120186647 | Organometallic And Hydrocarbon Additives For Use With Aluminum Back Solar Cell Contacts - A method of reducing bow and/or improving the electrical performance of an aluminum back contacted silicon solar cell includes applying to a silicon wafer substrate a paste including aluminum and an organometallic compound, and firing the substrate. The organometallic compound is a C | 07-26-2012 |
20120270366 | Layered Contact Structure For Solar Cells - Formulations and methods of making semiconductor devices and solar cell contacts are disclosed. The invention provides a method of making a semiconductor device or solar cell contact including ink jet printing onto a silicon wafer an ink composition, typically including a high solids loading (20-80 wt %) of glass frit and preferably a conductive metal such as silver. The wafer is then fired such that the glass frit fuses to form a glass, thereby forming a contact layer to silicon. | 10-25-2012 |
20130040422 | Thick Film Pastes For Fire Through Applications In Solar Cells - Formulations and methods of making solar cell contacts and cells therewith are disclosed. The invention provides a photovoltaic cell comprising a front contact, a back contact, and a rear contact. The back contact comprises, prior to firing, a passivating layer onto which is applied a paste, comprising aluminum, a glass component, wherein the aluminum paste comprises, aluminum, another optional metal, a glass component, and a vehicle. The back contact comprises, prior to firing, a passivating layer onto which is applied an aluminum paste, wherein the aluminum paste comprises aluminum, a glass component, and a vehicle. | 02-14-2013 |
20130062712 | Hot-Melt Sealing Glass Compositions And Devices Using The Same - Hot-melt sealing glass compositions that include one or more glass frits dispersed in a polymeric binder system. The polymeric binder system is a solid at room temperature, but melts at a temperature of from about 35° C. to about 90° C., thereby forming a flowable liquid dispersion that can be applied to a substrate (e.g., a cap wafer and/or a device wafer of a MEMS device) by screen printing. Hot-melt sealing glass compositions according to the invention rapidly re-solidify and adhere to the substrate after being deposited by screen printing. Thus, they do not tend to spread out as much as conventional solvent-based glass frit bonding pastes after screen printing. And, because hot-melt sealing glass compositions according to the invention are not solvent-based systems, they do not need to be force dried after deposition. | 03-14-2013 |
20130277624 | Solar Cell Metallizations Containing Metal Additive - Paste compositions, methods of making a paste composition, and methods of making a solar cell contact are disclosed. The paste composition can contain silver, a glass frit, a metal additive and an organic vehicle system. The metal additive is at least one selected from the group consisting of yttrium, an organo-vanadium compound, organo-antimony compound, organo-phosphorus compound, and an organo-yttrium compound. The paste can be used for making a solar cell contact. | 10-24-2013 |
20140008112 | Single Component, Low Temperature Curable Polymeric Composition And Related Method - Electrically conductive polymeric compositions curable at temperatures below 250° C. are disclosed. The compositions are particularly well suited for forming electrodes used in association with certain solar cells. | 01-09-2014 |
20140332067 | Via Fill Material For Solar Applications - The present invention is directed toward a via fill material for use in solar applications that exhibits low series resistance and high shunt resistance. The via fill material according to the invention includes silver powder, a glass frit and a vehicle. | 11-13-2014 |
20140332071 | ELECTRICALLY CONDUCTIVE POLYMERIC COMPOSITIONS, CONTACTS, ASSEMBLIES, AND METHODS - Electrically conductive polymeric compositions adapted for use in forming electronic devices are disclosed. The compositions are thermally curable at temperatures less than about 250° C. Compositions are provided which may be solvent-free and so can be used in processing or manufacturing operations without solvent recovery concerns. Core-shell conductive particles provide the conductivity of the compositions and devices contemplated herein. | 11-13-2014 |
20140373909 | Fire Through Aluminum Paste for SiNx And Better BSF Formation - Paste compositions, methods of making a paste composition, photovoltaic cells, and methods of making a photovoltaic cell contact are disclosed. The paste composition can include a conductive metal component such as aluminum, phosphate glass, phosphorus compounds such as alky! phosphate, and a vehicle. The contact can be formed on a passivation layer on a silicon wafer by applying the paste on the passivation layer and firing the paste. During firing, the metal component can fire through the passivation layer, thereby electrically contacting the silicon substrate. | 12-25-2014 |
20140373913 | SOLAR CELL METALLIZATIONS CONTAINING ORGANOZINC COMPOUND - Paste compositions, methods of making paste compositions, contacts, and methods of making contacts are disclosed. The paste compositions include a solid portion and a vehicle system. The solid portion includes a conductive metal component and a glass binder. The vehicle system includes organometallic compound containing zinc. The organometallic compounds containing zinc can be dissolved in the vehicle system and the vehicle system does not include particles that contain zinc. The paste compositions can be used to form contacts in solar cells or other related components. | 12-25-2014 |
20150020881 | DIELECTRIC COATING FOR SINGLE SIDED BACK CONTACT SOLAR CELLS - A dielectric coating material system for use in a single-sided back contact solar cell is disclosed. The material system serves to electrically isolate electrodes of opposite polarity types on the same side of a silicon-based solar call, and includes titanium and phosphorus. | 01-22-2015 |
20150027524 | SILVER SOLAR CELL CONTACTS - Solar cell conductor formulations made are from two silver powders having different particle size distributions, an aluminum powder, and two frit glass compositions having softening points in the range of 250-700° C. and whose softening points differ by at least 10° C. | 01-29-2015 |
20150072463 | Methods Of Printing Solar Cell Contacts - Silicon solar cells and contacts thereof are printed in at least a two stage printing process where the busbars and fingerlines may be printed separately. A reduction in silver content in busbars and fingerlines through use of the techniques of the invention have been realized, including the use of certain base metals, while maintaining low contact resistance similar to silver pastes. | 03-12-2015 |
Patent application number | Description | Published |
20100165928 | UTILIZATION OF MULTIPLE ACCESS POINTS TO SUPPORT MULTIPLE APPLICATIONS AND SERVICES - A method that includes establishing a connection with a default access point, transmitting a request to access or utilize an application, a service, or a resource, receiving a response to the request that includes a location of a serving access point that provides the application, the service, or the resource, establishing a connection with the serving access point, and receiving an assignment of a network address that is anchored by the serving access point. | 07-01-2010 |
20100317350 | SOFT HANDOVER FOR MOBILE DEVICE - A method implemented in a mobile device includes identifying a target wireless network for a handover, where the target wireless network uses a different access technology than an existing wireless network being used by the mobile device. The mobile device determines that a signal for the existing wireless network meets an early registration trigger threshold and initiates, based on the determining, an early registration of the mobile device with the target wireless network, where an early registration is performed at a sufficient time prior to the actual handover to preclude a registration delay associated with the handover to the different access technology. | 12-16-2010 |
20110007706 | RADIO ACCESS NETWORK (RAN) CAPACITY/RESOURCE DETERMINATION - A device receives code division multiple access (CDMA) capacity/resource information via a first direct interface with a radio network controller (RNC) associated with a CDMA radio access network (RAN), and determines, based on the CDMA capacity/resource information, a capacity associated with the CDMA RAN. The device also determines, based on the CDMA capacity/resource information, a resource availability associated with the CDMA RAN, and determines, based on the capacity and the resource availability associated with the CDMA RAN, a CDMA RAN resource allocation. | 01-13-2011 |
20110040882 | DYNAMIC HANDLER FOR SIP MAX-SIZE ERROR - A network device forwards a Session Initiation Protocol (SIP) setup request from an originating user device toward a destination user device via multiple network elements and intercepts a message-too-large error message sent from one of the multiple network elements to the originating user device. The network device automatically splits the session setup request into smaller SIP messages, where a size of each of the smaller SIP messages is less than or equal to a particular size of message that the network element will accept. The network device then notifies another one of the multiple elements that the session setup request has been split into the smaller SIP messages and sends, via the multiple network elements, the smaller SIP messages toward the destination user device on behalf of the originating device. | 02-17-2011 |
20110051712 | INTERNET PROTOCOL MULTIMEDIA SYSTEM (IMS) MOBILE SESSION INITIATION PROTOCOL (SIP) AGENT - A first phone obtains an identifier of a second phone from a phone list, and sends a request for the second phone's Session Initiation Protocol (SIP) type to a remote server. The first phone receives the second phone's SIP type from the remote server, and sends a message to one or more nodes in a network, based on the received second phone's SIP type, for a SIP session between the first phone and the second phone. | 03-03-2011 |
20110099293 | INTERNET PROTOCOL (IP) ADDRESS POOL MANAGEMENT AND ALLOCATION - A device receives Internet protocol (IP) traffic flow data from network devices of a wireless network, groups the network devices into sets based on the IP traffic flow data, and estimates, based on the sets, information associated with the network devices. The device also groups the network devices into clusters based on the estimated information, ranks the clusters, and assigns IP address pools to each of the network devices based on the ranked clusters. The device further provides the assigned IP address pools to authorization, authentication, accounting (AAA) devices of the wireless network. | 04-28-2011 |
20110134880 | LONG TERM EVOLUTION (LTE) MOBILE ANCHORING - A device receives roaming information associated with a user equipment (UE), a current eNodeB conducting a current Internet protocol (IP) session with the UE, and a plurality of eNodeBs that are neighboring the current eNodeB. The device also selects, based on the roaming information and from the plurality of eNodeBs, an optimal eNodeB to which to handover the UE, and establishes a preemptive IP session with the optimal eNodeB. The device further initiates a handover of the current IP session and the UE from the current eNodeB to the optimal eNodeB, where the current eNodeB acts as an anchoring point for a bearer path associated with the UE during the handover. | 06-09-2011 |
20110141947 | INTEGRATED LAWFUL INTERCEPT FOR INTERNET PROTOCOL MULTIMEDIA SUBSYSTEM (IMS) OVER EVOLVED PACKET CORE (EPC) - A method and a system provide integrated lawful intercept, for IMS over an Evolved Packet Core (EPC), for both packet data and session initiation protocol (SIP)-based applications. The system includes a device that receives a lawful intercept request from a law enforcement agency, and determines whether a packet data lawful intercept or a SIP-based applications (SBA) lawful intercept is requested by the lawful intercept request. The device also provisions, when a packet data lawful intercept is requested by the lawful intercept request, a policy control and charging rules function (PCRF) and a packet data network (PDN) gateway (PGW) for the packet data lawful intercept. The device further provisions, when a SBA lawful intercept is requested, a proxy call session control function (P-CSCF), a serving-CSCF (S-CSCF), and a session border controller (SBC) for the SBA lawful intercept. | 06-16-2011 |
20140056257 | UTILIZATION OF MULTIPLE ACCESS POINTS TO SUPPORT MULTIPLE APPLICATIONS AND SERVICES - A method that includes establishing a connection with a default access point, transmitting a request to access or utilize an application, a service, or a resource, receiving a response to the request that includes a location of a serving access point that provides the application, the service, or the resource, establishing a connection with the serving access point, and receiving an assignment of a network address that is anchored by the serving access point. | 02-27-2014 |
Patent application number | Description | Published |
20120105081 | CAPACITIVE SENSOR, DEVICE AND METHOD - Exemplary capacitive sensors may be capable of determining presence and location of a touch and capable of determining a fingerprint pattern. | 05-03-2012 |
20130032414 | Touch Sensor for Curved or Flexible Surfaces - In one embodiment, an apparatus includes a substantially flexible substrate configured to bend at an edge between a first surface and a second surface of a device. The edge has an angle of deviation between the first and second surfaces of at least approximately 45°. The apparatus includes a touch sensor disposed on the substantially flexible substrate and configured to bend with the substantially flexible substrate at the edge between the first and second surfaces. The touch sensor includes drive or sense electrodes made of flexible conductive material configured to bend with the substantially flexible substrate at the edge between the first and second surfaces. The touch sensor has at least one active area on each of the first and second surfaces. | 02-07-2013 |
20130038563 | Substantially Edgeless Touch Sensor - In one embodiment, an apparatus includes a substrate configured to extend substantially out to at least two edges of a surface of a device. The apparatus also includes a touch sensor disposed on the substrate, the touch sensor comprising an active area that is configured to extend substantially out to at least two of the edges of the surface of the device. | 02-14-2013 |
20130106441 | Flexible Touch Sensor | 05-02-2013 |
20130127775 | Single-Layer Touch Sensor with Crossovers - In one embodiment, an apparatus includes drive or sense electrodes of a touch sensor. Each of the electrodes are made of a conductive mesh of lines of conductive material. The apparatus also includes one or more conductive crossovers that each couple two of the drive electrodes to each other or couple two of the sense electrodes to each other. At least a portion of each of the conductive crossovers is disposed on a plane different than a plane of the drive or sense electrodes. | 05-23-2013 |
20130155001 | Low-Resistance Electrodes - In one embodiment, an apparatus includes one or more substrates and a touch sensor disposed on one or more of the substrates. The touch sensor has a substantially transparent electrode made of lines of substantially opaque conductive material and the substantially transparent electrode having an effective sheet resistance within a range of approximately 5 to approximately 20 ohms per square. | 06-20-2013 |
20130194198 | Thin Dielectric Layer For Touch Sensor Stack - In one embodiment, a method for forming a touch sensor is provided. The method includes forming a substrate and a plurality of electrodes comprising one or more conductive materials on a first surface of the substrate. The method further includes forming a dielectric layer that is less than 40 microns thick over the plurality of electrodes and at least a portion of the first surface of the substrate, with no adhesive layer placed between the dielectric layer and the plurality of electrodes. | 08-01-2013 |
20140047706 | Capacitive Touch Sensor for Identifying a Fingerprint - A capacitive sensor includes at least one substrate, a capacitive touch position sensor, and a capactive fingerprint sensor. The capacitive touch position sensor is included on the at least one substrate and in a touch sensing area. The capactive touch position sensor includes electrodes configured to enable detection of the presence and position of a touch in the touch sensing area. The capactive fingerprint sensor is included on the at least one substrate and in a fingerprint sensing area. The capacitive fingerprint sensor includes electrodes configured to enable identification of the fingerprint of a finger placed in the fingerprint sensing area. | 02-20-2014 |
20140267099 | TOUCH SENSOR WITH PLASTIC COVER LENS - According to one embodiment, an apparatus comprises a substrate, a touch sensor, and a cover lens. The touch sensor is disposed on the substrate. A conductive mesh forms portions of the touch sensor, and the conductive mesh comprises fine lines of metal. The cover lens is coupled to the touch sensor and is at most 0.4 mm thick. The cover lens comprises plastic. | 09-18-2014 |
20140267141 | TOUCH SENSOR WITH COVER LENS - According to one embodiment, an apparatus comprises a substrate, a touch sensor, and a cover lens. The touch sensor is disposed on the substrate. A conductive mesh forms portions of the touch sensor, and the conductive mesh comprises fine lines of metal. The cover lens is coupled to the touch sensor and is at most 0.55 mm thick. | 09-18-2014 |
Patent application number | Description | Published |
20110294303 | CONFINED PROCESS VOLUME PECVD CHAMBER - An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom. | 12-01-2011 |
20110303899 | GRAPHENE DEPOSITION - Embodiments of the invention are directed toward the deposition of Graphene on a semiconductor substrate. In some embodiments, these processes can occur at low temperature levels during a back end of the line process. For example, Graphene can be deposited in a CVD reactor at a processing temperature that is below 600° C. to protect previously deposited layers that may be susceptible to sustained higher temperatures. Graphene deposition can include the deposition of an underlayer (e.g., cobalt) followed by the flow of a carbon precursor (e.g., acetylene) at the processing temperature. Graphene can then be synthesized with during cooling, an RTP cure, and/or a UV cure. | 12-15-2011 |
20120015521 | AMORPHOUS CARBON DEPOSITION METHOD FOR IMPROVED STACK DEFECTIVITY - Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer. | 01-19-2012 |
20120208374 | AMORPHOUS CARBON DEPOSITION METHOD FOR IMPROVED STACK DEFECTIVITY - Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater. | 08-16-2012 |
20130161629 | ZERO SHRINKAGE SMOOTH INTERFACE OXY-NITRIDE AND OXY-AMORPHOUS-SILICON STACKS FOR 3D MEMORY VERTICAL GATE APPLICATION - Methods are provided for depositing a stack of film layers for use in vertical gates for 3D memory devices, by depositing a sacrificial nitride film layer at a sacrificial film deposition temperature greater than about 550° C.; depositing an oxide film layer over the nitride film layer, at an oxide deposition temperature of about 600° C. or greater; repeating the above steps to deposit a film stack having alternating layers of the sacrificial films and the oxide films; forming a plurality of holes in the film stack; and depositing polysilicon in the plurality of holes in the film stack at a polysilicon process temperature of about 700° C. or greater, wherein the sacrificial film layers and the oxide film layers experience near zero shrinkage during the polysilicon deposition. Flash drive memory devices may also be made by these methods. | 06-27-2013 |
20130302996 | DEPOSITION OF AN AMORPHOUS CARBON LAYER WITH HIGH FILM DENSITY AND HIGH ETCH SELECTIVITY - Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C. | 11-14-2013 |
20140118751 | PECVD PROCESS - A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants. | 05-01-2014 |