Song-Yuan
Song-Yuan Chang, Zhongli City TW
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20100163784 | Polishing Composition for Planarizing Metal Layer - A polishing composition of the present invention at least comprises about 750 ppm to less than 5000 ppm by weight of abrasive particles, hydrogen peroxide, an accelerator, a dual-corrosion inhibitor and water, wherein the dual-corrosion inhibitor contains a first and a second corrosion inhibitor. The dual-corrosion inhibitor is applied to the planarization of metal layers so as to maintain a high removal rate of metal layers as well as suppress etching of the metal, thus capable of reducing polishing defects such as dishing, erosion and the like. | 07-01-2010 |
20100193728 | Chemical Mechanical Polishing Composition - An inhibitor composition according to the present invention at least comprises an imidazoline compound or a triazole compound or combinations thereof, and sarcosine and salt compounds thereof or combinations thereof. The inhibitor composition is applicable to chemical mechanical polishing so as to maintain a high removal rate of metal layers as well as suppress metal etching, thereby reducing polishing defects such as dishing, erosion and the like. | 08-05-2010 |
Song-Yuan Chang, Zhongli TW
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20090184287 | SARCOSINE COMPOUND USED AS CORROSION INHIBITOR - The sarcosine compounds used as a corrosion inhibitor according to the present invention include sarcosine and salt compounds thereof. The corrosion inhibitor is used in chemical mechanical polishing compositions or post CMP clean agents, which forms a protective film on the surface of a work piece to prevent the work piece from corrosion in chemical mechanical polishing, and thus common residue defect on the surface of a work piece due to the use of a conventional corrosion inhibitor (e.g. benzotriazole (BTA)) can be improved or the surface of a work piece can be protected from corrosion in post-CMP cleaning. | 07-23-2009 |
Song-Yuan Chang, Minxiong Township TW
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20150129795 | CHEMICAL MECHANICAL POLISHING METHOD USING SLURRY COMPOSITION CONTAINING N-OXIDE COMPOUND - The present disclosure relates to a chemical mechanical polishing (CMP) slurry composition that provides for a high metal to dielectric material selectivity along with a low rate of metal recess formation. In some embodiments, the disclosed slurry composition has an oxidant and an etching inhibitor. The oxidant has a compound with one or more oxygen molecules. The etching inhibitor has a nitrogen-oxide compound. The etching inhibitor reduces the rate of metal and dielectric material (e.g., oxide) removal, but does so in a manner that reduces the rate of dielectric material removal by a larger amount, so as to provide the slurry composition with a high metal (e.g., germanium) to dielectric material removal selectivity and with a low rate of metal recess formation. | 05-14-2015 |
Song-Yuan Hu, Penghu County TW
Patent application number | Description | Published |
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20100273531 | ELECTRONIC DEVICE - An electronic device includes a first housing, a second housing and an aberration compensating chip. The first housing has a first display screen, and the second housing connected to the first housing has a second display screen, wherein the first display screen can be joined with the second display screen and a seam located at the joining place between the first display screen and the second display screen is formed. The aberration compensating chip disposed in the first housing or in the second housing is electrically connected to the first display screen and the second display screen. When the second housing moves relative to the first housing so as to simultaneously expose the first display screen and the second display screen for displaying images, the aberration compensating chip makes the seam trace between the first display screen and the second display screen invisible so as to display a complete image. | 10-28-2010 |