BIPOLAR TRANSISTOR WITH A COLLECTOR HAVING A PROTECTED OUTER EDGE PORTION FOR REDUCED BASED-COLLECTOR JUNCTION CAPACITANCE AND A METHOD OF FORMING THE TRANSISTOR - diagram, schematic, and image 03
Back to BIPOLAR TRANSISTOR WITH A COLLECTOR HAVING A PROTECTED OUTER EDGE PORTION FOR REDUCED BASED-COLLECTOR JUNCTION CAPACITANCE AND A METHOD OF FORMING THE TRANSISTOR , All Patents .