52nd week of 2012 patent applcation highlights part 16 |
Patent application number | Title | Published |
20120326116 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor structure with a waveguide, the semiconductor structure has a plurality of layers, at least one of which being partially laterally oxidised, said laterally oxidised material modifying the lateral effective refractive index with said structure in order to form a waveguide within the structure, the structure also has a quantum dot, said quantum dot being configured to emit photons into said waveguide, the waveguide being configured such that it guides the output from a single quantum dot. | 2012-12-27 |
20120326117 | SEMICONDUCTOR LIGHT EMMITING DEVICE - According to one embodiment, in a semiconductor light emitting device, a semiconductor laminated body is made by laminating a first semiconductor layer of a first conductivity type having a first sheet resistance, a light emitting layer, and a second semiconductor layer of a second conductivity type and includes a cutout unit formed at an end side and an indentation unit extending from the cutout unit in a first direction toward the other end side and branching or bending in a second direction substantially perpendicular to the first direction as well as bending or branching in a direction opposite to the second direction. A transparent conductive film is formed on the semiconductor laminated body and has a second sheet resistance less than the first sheet resistance. A first thin wire electrode is formed along the indentation unit. A second thin wire electrode is formed on the transparent conductive film. | 2012-12-27 |
20120326118 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - In one embodiment, a semiconductor light emitting device includes a substrate, an electrically-conductive reflection film, an active region, a first electrode, a transparent conductive film and a second electrode. In the active region, a first transparent electrode, a first conductivity type contact layer, a light emitting layer, a second conductivity type contact layer and a second transparent electrode are formed and stacked on the electrically-conductive reflection film. The first electrode is provided away from the active region on the electrically-conductive reflection film. One end of the transparent conductive film is provided to cover the upper portion of the second transparent electrode, while the other end of the transparent conductive film is provided above the electrically-conductive reflection film through an insulating film. The transparent conductive film is in contact with a lateral surface of the active region through the insulating film. | 2012-12-27 |
20120326119 | LIGHT EMITTING DISPLAY DEVICE HAVING NANOWIRE - The invention is a light emitting display device having a nanowire that emits light when an electric current is applied. The disclosed light emitting display device comprises: a nanowire light emitting element electrically connected to a first power line; a driving transistor electrically connected between the light emitting element and a second power line; a capacitor electrically connected between the driving transistor, the second power line, and a data line; and a switching transistor electrically connected between the driving transistor, the data line, and a scanning line. The invention discloses a light emitting display device comprising: a nanowire light emitting transistor electrically connected between a first power line and a second power line; a capacitor electrically connected between the nanowire light emitting transistor, second power line, and a data line; and a switching transistor electrically connected between the nanowire light emitting transistor, data line, capacitor, and a scanning line. | 2012-12-27 |
20120326120 | TRANSPARENT LED WAFER MODULE AND METHOD FOR MANUFACTURING SAME - A transparent LED wafer module and a method for manufacturing the same are provided. In a conductor LED device epitaxial process, the conductor LED device is grown on a transparent material wafer, where both surfaces of the conductor LED device are entirely grown on the transparent material, and then a transparent glass substrate is restacked, thereby securing a high amount of light. | 2012-12-27 |
20120326121 | VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. | 2012-12-27 |
20120326122 | EPITAXIAL WAFER, PHOTODIODE, OPTICAL SENSOR DEVICE, AND METHODS FOR PRODUCING EPITAXIAL WAFER AND PHOTODIODE - Provided are an epitaxial wafer, a photodiode, and the like that include an antimony-containing layer and can be efficiently produced such that protruding surface defects causing a decrease in the yield can be reduced and impurity contamination causing degradation of the performance can be suppressed. | 2012-12-27 |
20120326123 | APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTUM WELL DEVICE - Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed. | 2012-12-27 |
20120326124 | FRONTSIDE-ILLUMINATED INVERTED QUANTUM WELL INFRARED PHOTODETECTOR DEVICES - A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array. | 2012-12-27 |
20120326125 | Deposition On A Nanowire Using Atomic Layer Deposition - A semiconductor device includes a substrate, a nanowire, a first structure, and a second structure. The nanowire is suspended between the first structure and the second structure, where the first structure and the second structure overly the substrate, where the nanowire includes a layer on a surface of the nanowire, where the layer includes at least one of silicide and carbide, where the layer has a substantially uniform shape. | 2012-12-27 |
20120326126 | Graphene or Carbon Nanotube Devices with Localized Bottom Gates and Gate Dielectric - Transistor devices having nanoscale material-based channels (e.g., carbon nanotube or graphene channels) and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; an insulator on the substrate; a local bottom gate embedded in the insulator, wherein a top surface of the gate is substantially coplanar with a surface of the insulator; a local gate dielectric on the bottom gate; a carbon-based nanostructure material over at least a portion of the local gate dielectric, wherein a portion of the carbon-based nanostructure material serves as a channel of the device; and conductive source and drain contacts to one or more portions of the carbon-based nanostructure material on opposing sides of the channel that serve as source and drain regions of the device. | 2012-12-27 |
20120326127 | COLLAPSABLE GATE FOR DEPOSITED NANOSTRUCTURES - A disposable material layer is first deposited on a graphene layer or a carbon nanotube (CNT). The disposable material layer includes a material that is less inert than graphene or CNT so that a contiguous dielectric material layer can be deposited at a target dielectric thickness without pinholes therein. A gate stack is formed by patterning the contiguous dielectric material layer and a gate conductor layer deposited thereupon. The disposable material layer shields and protects the graphene layer or the CNT during formation of the gate stack. The disposable material layer is then removed by a selective etch, releasing a free-standing gate structure. The free-standing gate structure is collapsed onto the graphene layer or the CNT below at the end of the selective etch so that the bottom surface of the contiguous dielectric material layer contacts an upper surface of the graphene layer or the CNT. | 2012-12-27 |
20120326128 | GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE - A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer. | 2012-12-27 |
20120326129 | METAL-FREE INTEGRATED CIRCUITS COMPRISING GRAPHENE AND CARBON NANOTUBES - An integrated circuit includes a graphene layer, the graphene layer comprising a region of undoped graphene, the undoped graphene comprising a channel of a transistor, and a region of doped graphene, the doped graphene comprising a contact of the transistor; and a gate of the transistor, the gate comprising a carbon nanotube film. A method of fabricating an integrated circuit comprising graphene and carbon nanotubes, includes forming a graphene layer; doping a portion of the graphene layer, resulting in doped graphene and undoped graphene; forming a carbon nanotube film; and etching the carbon nanotube film to form a gate of a transistor, wherein the transistor further comprises a channel comprising the undoped graphene and a contact comprising the doped graphene. A transistor includes a gate, the gate comprising a carbon nanotube film; a channel, the channel comprising undoped graphene; and a contact, the contact comprising doped graphene. | 2012-12-27 |
20120326130 | JOSEPHSON QUANTUM COMPUTING DEVICE AND INTEGRATED CIRCUIT USING SUCH DEVICES - A Josephson quantum computing device and an integrated circuit using Josephson quantum computing devices which can realize a NOT gate operation controlled with 2 bits will be provided. The Josephson quantum computing device ( | 2012-12-27 |
20120326131 | ORGANIC LIGHT EMITTING DIODE DISPLAY - A solar cell integrated organic light emitting diode (OLED) display is disclosed. In one embodiment, the organic light emitting diode (OLED) display includes i) a substrate, ii) an organic light emitting element formed on the substrate and including a reflection electrode, an organic emission layer, and a transparent electrode sequentially deposited from the substrate. The OLED display may further include a solar cell unit positioned on the organic light emitting element and an encapsulation member positioned on one of the organic light emitting element and the solar cell unit. | 2012-12-27 |
20120326132 | ORGANIC LIGHT EMITTING ELEMENT - An organic light emitting element includes a first electrode, a second electrode, and an organic layer. The organic layer includes a first emission layer between the first electrode and the second electrode, a second emission layer between the first emission layer and the second electrode, and an electron injection layer (EIL) between the first emission layer and the second emission layer, the electron injection layer (EIL) containing fullerene (C60). | 2012-12-27 |
20120326133 | NOVEL COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A compound represented by Formula 1 below and an organic light-emitting device including an organic layer containing the compound of Formula 1: | 2012-12-27 |
20120326134 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DIODE AND FLAT DISPLAY DEVICE INCLUDING THE HETEROCYCLIC COMPOUND - A heterocyclic compound, an organic light-emitting diode, and a flat display device, the heterocyclic compound being represented by Formula 1, below: | 2012-12-27 |
20120326135 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DIODE AND FLAT DISPLAY DEVICE INCLUDING THE HETEROCYCLIC COMPOUND - A heterocyclic compound, an organic light-emitting diode, and a flat display device, the heterocyclic compound being represented by Formula 1, below: | 2012-12-27 |
20120326136 | MATERIALS AND METHODS FOR CONTROLLING PROPERTIES OF ORGANIC LIGHT-EMITTING DEVICE - The present teachings provide methods for depositing and patterning organic light-emitting device (OLED) buffer layers. The method can use a thermal printing process and one or more additional processes, such as vacuum thermal evaporation (VTE), to create an OLED stack. OLED stack structures are also provided wherein which at least one of the charge injection or charge transport layers is formed by a thermal printing method at a high deposition rate. The organic layer can be subject to post-deposition treatment such as baking. The structure of the organic layer can be amorphous, crystalline, porous, dense, smooth, rough, or a combination thereof, depending on deposition parameters and post-treatment conditions. The organic layer can improve light out-coupling efficiency of an OLED, increase conductivity, decrease index of refraction, and/or modify the emission chromaticity of an OLED. | 2012-12-27 |
20120326137 | ORGANIC LIGHT-EMITTING DIODE AND FLAT DISPLAY DEVICE INCLUDING THE SAME - An organic light-emitting diode including a first electrode; a second electrode facing the first electrode; an emission layer interposed between the first electrode and the second electrode; a first hole transport layer including a first hole transporting compound; a second hole transport layer including a second hole transporting compound, the first and second hole transport layers being interposed between the first electrode and the emission layer; an electron transport layer interposed between the emission layer and the second electrode; a first mixing layer interposed between the first electrode and the first hole transport layer, contacting the first hole transport layer, and including the first hole transporting compound and a first cyano group-containing compound; and a second mixing layer interposed between the first electrode and the second hole transport layer, contacting the second hole transport layer, and including the second hole transporting compound and a second cyano group-containing compound. | 2012-12-27 |
20120326138 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A heterocyclic compound represented by Formula 1 or Formula 2 below, an organic light-emitting device including the heterocyclic compound, and a flat display device including the organic light-emitting device: | 2012-12-27 |
20120326139 | MATERIALS AND METHODS FOR CONTROLLING PROPERTIES OF ORGANIC LIGHT-EMITTING DEVICE - The present teachings provide methods for forming organic layers for an organic light-emitting device (OLED) using an inkjet printing or thermal printing process. The method can further use one or more additional processes, such as vacuum thermal evaporation (VTE), to create an OLED stack. OLED stack structures are also provided wherein at least one of the charge injection or charge transport layers is formed by an inkjet printing or thermal printing method at a high deposition rate. The structure of the organic layer can be amorphous, crystalline, porous, dense, smooth, rough, or a combination thereof, depending on deposition parameters and post-treatment conditions. An OLED microcavity is also provided and can be formed by one of more of the methods. | 2012-12-27 |
20120326140 | POLYMER COMPOUND AND LIGHT-EMITTING DEVICE USING SAME - It is an object of the invention to provide a polymer compound that, when used in a light-emitting device, results in excellent luminance life for the obtained light-emitting device. The invention provides a polymer compound comprising a constitutional unit represented by formula (1). | 2012-12-27 |
20120326141 | ORGANIC ELECTROLUMINESCENT DEVICE - The present invention relates to organic electro-luminescent devices which in a hole transport layer have a mixture of two or more materials. | 2012-12-27 |
20120326142 | ORGANIC LIGHT EMITTING DIODES HAVING INCREASED ILLUMINATION - OLEDs having increased illumination are disclosed. The OLEDs have light emitting layers with periodic grain sizes. In particular, by depositing smaller particles at the boundaries of the emitting layers, the injection rate of carriers is improved in the emitting layers and by depositing larger particles in the middle of the emitting layers, the carrier density is increased, which increases electron-hole recombination. Increased recombination facilitates radiative emission of exitons from the OLED. As a result of the periodic grain size structure of the emitting layers, the electroluminescence and durability of the OLEDs are improved. | 2012-12-27 |
20120326143 | Light-Emitting Device and Manufacturing Method of the Light-Emitting Device - A light-emitting device in which reduction in performance due to moisture is suppressed is provided. The light-emitting device has a structure in which a partition having a porous structure surrounds each of light-emitting elements. The partition having a porous structure physically adsorbs moisture; therefore, in the light-emitting device, the partition functions as a hygroscopic film at a portion extremely close to the light-emitting element, so that moisture or water vapor remaining in the light-emitting device or entering from the outside can be effectively adsorbed. Thus, reduction in performance of the light-emitting device due to moisture or water vapor can be effectively suppressed. | 2012-12-27 |
20120326144 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME - A method includes: a step of forming a gate electrode ( | 2012-12-27 |
20120326145 | Light Emitting Device and Electronic Device - An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process. | 2012-12-27 |
20120326146 | Sacrificial Wafer Probe Pads Through Seal Ring for Electrical Connection to Circuit Inside an Integrated Circuit - The disclosure is directed to a semiconductor wafer, integrated circuit product, and method of making same, having multiple non-singulated chips separated by scribe lines, comprising a plurality of seal rings, each seal ring surrounding a corresponding chip and disposed between the corresponding chip and adjacent scribe lines. Well resistors are disposed below the seal rings and probe pads disposed in the scribe lines. In particular, at least one of the probe pads is coupled by at least one of the well resistors to at least one of the chips. | 2012-12-27 |
20120326147 | SEMICONDUCTOR CHIP, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR PACKAGE - Provided is a semiconductor chip in which a first rewiring connection part located in the peripheral electrode pad or relatively close to the peripheral electrode pad in the V/G line and a second rewiring connection part located relatively distant from the peripheral electrode pad in the V/G line and having a lower potential than the first rewiring connection part before formation of a rewiring line are connected by the rewiring line. The semiconductor chip includes an inspection part for wafer test in the second rewiring connection part, a part on the V/G line close to the second rewiring connection part and having a lower potential than the first rewiring connection part before the rewiring line formation, or a conductive part extended from the V/G line to a proximity of the second rewiring connection part and having a lower potential than the first rewiring connection part before the rewiring line formation. | 2012-12-27 |
20120326148 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel and a manufacturing method therefor. A shorting bar for connecting a thin film transistor with data lines is formed separate from the data lines, and then the data lines and the shorting bar are connected through a connecting member. As a result, all the data lines are floated during manufacture, so that variation in etching speed between data lines does not occur. Since variation in etching speed between the data lines can be prevented, performance deterioration of the transistor caused by a thickness difference in the lower layer of the data line can be prevented, as can resulting deterioration in display quality. Also, the influence of static electricity can be reduced or eliminated. Furthermore, since the data lines and the shorting bar are connected to each other, the generation of static electricity can be prevented or reduced, and quality testing is more readily performed. | 2012-12-27 |
20120326149 | Protecting Semiconducting Oxides - In transistor structures such as thin film transistors (TFTs) in an array of cells, a layer of semiconducting oxide material that includes a channel is protected by a protective layer that includes low-temperature encapsulant material. The semiconducting oxide material can be a transition metal oxide material such as zinc oxide, and can be in an active layered substructure that also includes channel end electrodes. The low-temperature encapsulant can, for example, be an organic polymer such as poly(methyl methacrylate) or parylene, deposited on an exposed region of the oxide layer such as by spinning, spincasting, evaporation, or vacuum deposition or an inorganic polymer deposited such as by spinning or liquid deposition. The protective layer can include a lower sublayer of low-temperature encapsulant on the exposed region and an upper sublayer of inorganic material on the lower sublayer. For roll-to-roll processing, a mechanically flexible, low-temperature substrate can be used. | 2012-12-27 |
20120326150 | Organic light emitting display device and method for manufacturing the same - An exemplary embodiment may include a substrate, an insulating layer on the substrate, and a pixel electrode including a transparent conductive layer on the insulating layer. A portion of a surface of the insulating layer contacting the transparent conductive layer has a plurality of recessed holes formed by etching with an etchant into an interface between the transparent conductive layer of the pixel electrode and the insulating layer. | 2012-12-27 |
20120326151 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes: an insulating substrate comprising a first region and a second region; a thin-film transistor (TFT) formed on the first region comprising a gate electrode, a source electrode, and a drain electrode; and a storage capacitor formed on the second region, wherein the storage capacitor comprises a first electrode, a second electrode and a first interlayer insulating film, where the first and second electrodes face each other and are made of a transparent conductive material, wherein the interlayer insulating film is interposed between the first electrode and the second electrode, and wherein the first electrode is formed on the entire surface of the first substrate as one body and receives a common voltage, and the second electrode is electrically connected to the drain electrode. | 2012-12-27 |
20120326152 | THIN FILM TRANSISTOR SUBSTRATE, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING - A thin film transistor substrate includes a base substrate; a first insulating layer disposed on the base electrode; source and drain electrodes disposed on the first insulating layer to be spaced apart from each other; a semiconductor layer disposed on the source electrode, the drain electrode, and the first insulating layer; a second insulating layer disposed on the semiconductor layer; and a gate electrode disposed on the second insulating layer to overlap with the source electrode and the drain electrode. | 2012-12-27 |
20120326153 | THIN FILM TRANSISTOR ARRAY PANEL WITH OVERLAPPING FLOATING ELECTRODES AND PIXEL ELECTRODES - According to an embodiment of the present invention, a thin film transistor array panel includes a gate line and a data line insulated from each other an insulating substrate where the gate line and the data line cross each other to define a pixel region, a thin film transistor (TFT) disposed at an intersection of the gate line and the data line, a floating electrode where at least a portion of the floating electrode overlaps the data line, and a pixel electrode disposed at the pixel region where the pixel electrode is connected to the TFT and overlaps the at least a portion of the floating electrode. | 2012-12-27 |
20120326154 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR, AND DISPLAY - A method of making a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material. | 2012-12-27 |
20120326155 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - The present application discloses a semiconductor structure and method for manufacturing the same. The semiconductor structure comprises: an SOI substrate and a MOSFET formed on the SOI substrate, wherein the SOI substrate comprises, in a top-down fashion, an SOI layer, a first buried insulator layer, a buried semiconductor layer, a second buried insulator layer, and a semiconductor substrate, the buried semiconductor layer including a backgate region including a portion of the buried semiconductor layer doped with a dopant of a first polarity; the MOSFET comprises a gate stack and source/drain regions, the gate stack being formed on the SOI layer, and the source/drain regions being formed in the SOI layer at opposite sides of the gate stack; and the backgate region includes a counter-doped region, the counter-doped region is self-aligned with the gate stack and includes a dopant of a second polarity, and the second polarity is opposite to the first polarity. The embodiment of the present disclosure can be used for adjusting a threshold voltage of a MOSFET. | 2012-12-27 |
20120326156 | Organic light-emitting display apparatus and method of manufacturing organic light-emitting display apparatus - An organic light-emitting display apparatus includes a substrate, a thin-film transistor (TFT) on the substrate, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, a first insulating film between the gate electrode and the source electrode and between the gate electrode and the drain electrode, a second insulating film between the first insulating film and the source electrode and between the first insulating film and the drain electrode, the second insulating film including an opening, a first electrode between the first insulating film and the second insulating film, the first electrode including a region corresponding to the opening of the second insulating film, an intermediate layer including an organic light-emitting layer, and a second electrode on the intermediate layer. | 2012-12-27 |
20120326157 | Method of Manufacturing Thin Film Transistor, Thin Film Transistor Manufactured Using the Method, Method of Manufacturing Organic Light-Emitting Display Apparatus, and Organic Light-Emitting Display Apparatus Manufactured Using the Method - A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that have a predetermined shape by simultaneously patterning the polycrystalline silicon layer, the insulating layer, and the first conductive layer, wherein the polycrystalline silicon layer is further etched to produce an undercut recessed a distance compared to sidewalls of the insulating layer and the first conductive layer, forming source and drain regions within the semiconductor layer by doping corresponding portions of the semiconductor layer, forming an interlayer insulating layer on the gate electrode, the interlayer insulating layer covering the gate insulating layer and forming source and drain electrodes that are electrically connected to source and drain regions respectively. | 2012-12-27 |
20120326158 | FLAT PANEL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A flat panel display having a thin-film transistor (TFT) and a pixel unit and a method of manufacturing the same are disclosed. In one embodiment, the method includes forming a step difference layer having a relatively high step and a relatively low step on a substrate and forming an amorphous silicon layer on the step difference layer along a height shape of the step difference layer. The method further includes crystallizing the amorphous silicon layer into a crystalline silicon layer and polishing the crystalline silicon layer to form a planarized surface of the crystalline silicon layer having no height differences so that the crystalline silicon layer remains on a region corresponding to the low step and an active layer is formed. According to this method, crystallization protrusions are effectively removed from the active layer, and thus, stable brightness characteristics of the display apparatus are guaranteed. | 2012-12-27 |
20120326159 | LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY - Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region. In a further embodiment, the barrier layer is smaller than the mirror such that the periphery of the mirror is at least 40% free of the barrier layer, and the second contact is below the first contact and accessible from the bottom of the chip. | 2012-12-27 |
20120326160 | SEMICONDUCTOR DEVICE HAVING NITRIDE SEMICONDUCTOR LAYER - A semiconductor device includes a silicon substrate, an aluminum nitride layer which is arranged on the silicon substrate and has a region where silicon is doped thereof as an impurity, a buffer layer which is arranged on the aluminum nitride layer and has a structure where a plurality of nitride semiconductor films are laminated, and a semiconductor functional layer which is arranged on the buffer layer and made of nitride semiconductor. | 2012-12-27 |
20120326161 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - An exemplary nitride-based semiconductor device includes: a semiconductor multilayer structure | 2012-12-27 |
20120326162 | PROCESS FOR FORMING REPAIR LAYER AND MOS TRANSISTOR HAVING REPAIR LAYER - A repair layer forming process includes the following steps. Firstly, a substrate is provided, and a gate structure is formed on the substrate, wherein the gate structure at least includes a gate dielectric layer and a gate conductor layer. Then, a nitridation process is performed to form a nitrogen-containing superficial layer on a sidewall of the gate structure. Then, a thermal oxidation process is performed to convert the nitrogen-containing superficial layer into a repair layer. Moreover, a metal-oxide-semiconductor transistor includes a substrate, a gate dielectric layer, a gate conductor layer and a repair layer. The gate dielectric layer is formed on the substrate. The gate conductor layer is formed on the gate dielectric layer. The repair layer is at least partially formed on a sidewall of the gate conductor layer. | 2012-12-27 |
20120326163 | SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL MOBILITY AND DRY CHEMISTRY PROCESSES FOR FABRICATION THEREOF - Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device. | 2012-12-27 |
20120326164 | BETAVOLTAIC APPARATUS AND METHOD - An exemplary thinned-down betavoltaic device includes an N+ doped silicon carbide (SiC) substrate having a thickness between about 3 to 50 microns, an electrically conductive layer disposed immediately adjacent the bottom surface of the SiC substrate; an N− doped SiC epitaxial layer disposed immediately adjacent the top surface of the SiC substrate, a P+ doped SiC epitaxial layer disposed immediately adjacent the top surface of the N− doped SiC epitaxial layer, an ohmic conductive layer disposed immediately adjacent the top surface of the P+ doped SiC epitaxial layer, and a radioisotope layer disposed immediately adjacent the top surface of the ohmic conductive layer. The radioisotope layer can be | 2012-12-27 |
20120326165 | HEMT INCLUDING AIN BUFFER LAYER WITH LARGE UNEVENNESS - A HEMT comprised of nitride semiconductor materials is disclosed. The HEMT includes, on a SiC substrate, a AlN buffer layer, a GaN channel layer, and a AlGaN doped layer. A feature of the HEMT is that the AlN buffer layer is grown on an extraordinary condition of the pressure, and has a large unevenness in a thickness thereof to enhance the release of carriers captured in traps in the substrate back to the channel layer. | 2012-12-27 |
20120326166 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A substrate has a surface made of a semiconductor having a hexagonal single-crystal structure of polytype 4H. The surface of the substrate is constructed by alternately providing a first plane having a plane orientation of (0-33-8), and a second plane connected to the first plane and having a plane orientation different from the plane orientation of the first plane. A gate insulating film is provided on the surface of the substrate. A gate electrode is provided on the gate insulating film. | 2012-12-27 |
20120326167 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A silicon carbide substrate has a substrate surface. A gate insulating film is provided to cover a part of the substrate surface. A gate electrode covers a part of the gate insulating film. A contact electrode is provided on the substrate surfaces, adjacent to and in contact with the gate insulating film, and it contains an alloy having Al atoms. Al atoms do not diffuse from the contact electrode into a portion of the gate insulating film lying between the substrate surface and the gate electrode. Thus, in a case where a contact electrode having Al atoms is employed, reliability of the gate insulating film of a semiconductor device can be improved | 2012-12-27 |
20120326168 | TRANSISTOR WITH BURIED SILICON GERMANIUM FOR IMPROVED PROXIMITY CONTROL AND OPTIMIZED RECESS SHAPE - A method of forming a semiconductor device that includes providing a substrate including a semiconductor layer on a germanium-containing silicon layer and forming a gate structure on a surface of a channel portion of the semiconductor layer. Well trenches are etched into the semiconductor layer on opposing sides of the gate structure. The etch process for forming the well trenches forms an undercut region extending under the gate structure and is selective to the germanium-containing silicon layer. Stress inducing semiconductor material is epitaxially grown to fill at least a portion of the well trench to provide at least one of a stress inducing source region and a stress inducing drain region having a planar base. | 2012-12-27 |
20120326169 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING ELEMENT, LAMP, ELECTRONIC DEVICE AND MECHANICAL APPARATUS - Provided is a method for manufacturing a semiconductor light emitting element ( | 2012-12-27 |
20120326170 | WAFER LEVEL MOLDED OPTO-COUPLERS - Optocoupler packages and methods of making the same. An exemplary package comprises a substrate having a first surface, a second surface opposite the first surface, and a body of electrically insulating material disposed between the first and second surfaces; a first optoelectronic device embedded in the body of electrically insulating material of the substrate and disposed between the substrate's first and second surfaces, the first optoelectronic device having a first conductive region and a second conductive region; a second optoelectronic device embedded in the body of electrically insulating material of the substrate and disposed between the substrate's first and second surfaces and optically coupled to the first optoelectronic device, the second optoelectronic device having a first conductive region and a second conductive region; and a plurality of electrical traces disposed on one or both surfaces of the substrate and electrically coupled to the conductive regions of the optoelectronic devices. | 2012-12-27 |
20120326171 | LIGHT EMITTING DIODE HAVING ELECTRODE PADS - The present invention relates to light-emitting diodes. A light-emitting diode according to an exemplary embodiment of the present invention includes a first group including a plurality of first light emitting cells connected in parallel to each other, and a second group including a plurality of second light emitting cells connected in parallel to each other. Each first light emitting cell and second light emitting cell has a semiconductor stack that includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. At least two light emitting cells of the first light emitting cells share the first conductivity-type semiconductor layer, and at least two light emitting cells of the second light emitting cells share the first conductivity-type semiconductor layer. The first light emitting cells are connected in series to the second light emitting cells. | 2012-12-27 |
20120326172 | LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME - Provided is a liquid crystal display including: a first substrate; a thin film transistor disposed on the first substrate; a passivation layer disposed on the thin film transistor and comprising a contact hole exposing an electrode of the thin film transistor; a pixel electrode disposed on the passivation layer and connected to the electrode of the thin film transistor through the contact hole; a lower buffer layer disposed on the pixel electrode; a lower alignment layer disposed on the lower buffer layer; a second substrate facing the first substrate; a common electrode disposed on the second substrate; an upper buffer layer disposed on the common electrode; and an upper alignment layer disposed on the upper buffer layer, in which the lower buffer layer comprises parylene, the upper buffer layer comprises parylene, or both the lower and the upper buffer layers comprise parylene. | 2012-12-27 |
20120326173 | LIGHT EMITTING DIODE ELEMENT, METHOD OF FABRICATION AND LIGHT EMITTING DEVICE - A light emitting diode comprises a multi-layer semiconductor, a first electrode and a second electrode. The multi-layer semiconductor has a light emitting active layer substantially perpendicular to the predetermined surface, a first semiconductor layer located on a surface of the light emitting active layer and a second semiconductor layer located on an opposite surface of the light emitting active layer. The first electrode is provided adjacent to and electrically connect to the first semiconductor layer. The second electrode is provided adjacent to and electrically connect to the second semiconductor layer. In addition, a method of fabricating LED element and a light emitting device having the LED elements are provided. | 2012-12-27 |
20120326174 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an organic light-emitting display device includes forming a gate electrode including a lower gate electrode on a gate insulating layer and an upper gate electrode on the lower gate electrode; forming a source region and a drain region at a semiconductor active layer using the gate electrode as a mask; forming an interlayer insulating layer on a substrate and etching the interlayer insulating layer, resulting in contact holes that expose portions of the source region and the drain region; forming a source/drain electrode raw material on the substrate and etching the source/drain electrode raw material to form a source electrode and a drain electrode; forming a gold overlapped lightly doped drain (GOLDD) structure having a LDD region at the semiconductor active layer by injecting impurity ions; depositing a protective layer on the substrate; and forming a display device on the substrate. | 2012-12-27 |
20120326175 | LED PACKAGE AND METHOD FOR MAKING THE SAME - An LED package includes a substrate with two opposite lateral bulging portions, an LED die, an electrode structure, and a reflective layer. The substrate includes a first substrate and a second substrate stacked together; the first substrate and the second substrate are transparent; and the substrate includes an emitting surface for emitting light of the LED package. The electrode structure is sandwiched between the first substrate and the second substrate. The LED die is mounted in the substrate and electrically connected to the electrode structure. The reflective layer is formed on an outer surface of the substrate except the emitting surface and the bulging portions. The disclosure also provides a method for manufacturing such an LED package. | 2012-12-27 |
20120326176 | DISPLAY DEVICE AND FABRICATION METHOD FOR DISPLAY DEVICE - A capacitor unit in a display device includes: a capacitor element having a first capacitor electrode connected to a power line and provided in a GM electrode layer and a second capacitor electrode connected to a line and provided in an SD electrode layer; a backup capacitor element having a first backup capacitor electrode provided in the GM electrode layer and a second backup capacitor electrode connected to the power line and provided in the SD electrode layer; a disconnect-able portion at which a connection between the second capacitor electrode and the line can be disconnected; and a connectable portion at which the first backup capacitor electrode and the line can be connected, and the disconnect-able portion and the connectable portion are arranged at a position in which the disconnect-able portion and the connectable portion overlap in a stacking direction. | 2012-12-27 |
20120326177 | DISPLAY DEVICE AND FABRICATION METHOD FOR DISPLAY DEVICE - A display device capable of suppressing decrease in capacitance and capable of reducing area even when a capacitor unit is repaired is provided. A capacitor unit in a display device includes: a capacitor element having a first capacitor electrode connected to a power line and provided in an SD electrode layer and a second capacitor electrode provided in a GM electrode layer; a backup capacitor electrode provided in the TM electrode layer; a disconnect-able portion at which a connection between the first capacitor electrode and the power line can be disconnected; and a connectable portion at which the backup capacitor electrode and the power line can be connected, and the disconnect-able portion and the connectable portion overlap in a stacking direction. | 2012-12-27 |
20120326178 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT - An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material applied by atomic layer deposition on at least one surface region, the sealing material covering the surface region in a hermetically impermeable manner. | 2012-12-27 |
20120326179 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE - The MEMS shutter includes a shutter having an aperture part, a first spring connected to the shutter, a first anchor connected to the first spring, a second spring and a second anchor connected to the second spring, an insulation film on a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a perpendicular direction to a surface of a substrate, and the insulation film is not present on a surface of the plurality of terminals, and a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a parallel direction to a surface of the substrate and on the opposite side of the side facing the substrate. | 2012-12-27 |
20120326180 | LIGHT-EMITTING ELEMENT, DISPLAY AND DISPLAY DEVICE - A light-emitting element of the present invention includes (i) a light-emitting layer ( | 2012-12-27 |
20120326181 | LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, ILLUMINATING DEVICE, AND BACKLIGHT - In a light emitting device, one hundred or more bar-like structured light emitting elements ( | 2012-12-27 |
20120326182 | IMAGE DISPLAY APPARATUS AND IMAGE DISPLAY APPARATUS MANUFACTURING METHOD - Provided is an image display apparatus in which color breakup of a reflection image formed from reflected ambient light may be reduced to suppress the influence of an ambient environment. The image display apparatus includes multiple pixels. Each of the pixels includes a light-emitting layer and a structure layer having a refractive index distribution in an in-plane direction parallel to a screen of the image display apparatus, for extracting light generated from the light-emitting layer. The structure layer includes multiple structures formed of a first medium and a layer formed of a second medium having a refractive index different from a refractive index of the first medium. The multiple structures are non-periodically arranged in the layer. Reflected ambient light is reflected by the multiple structures formed of the first medium to have an overlap range to reduce color breakup of a reflection image formed from the reflected ambient light. | 2012-12-27 |
20120326183 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package may include a main body having a cavity including side surfaces and a bottom, and a first reflective cup and a second reflective cup provided in the bottom of the cavity of the main body and separated from each other. A first light emitting device may be provided in the first reflective cup, and a second light emitting device may be provided in the second reflective cup. | 2012-12-27 |
20120326184 | LED LIGHTING FIXTURE AND THE MANUFACTURING METHOD THEREOF - A LED (Light-Emitting Diode) lighting fixture and a manufacturing method thereof are disclosed. The LED lighting fixture comprises a LED module generating light at a wavelength range of 300-700 nm, a lamp cover shielding the LED module, and a phosphor layer. The phosphor layer which is coated on an inner surface towards the LED module comprises at least two types of phosphor mixed at a default ratio for transforming the light of 300-700 nm in wavelength to luminary light in the wavelength range of 400-700 nm. | 2012-12-27 |
20120326185 | LIGHT EMITTING DEVICE - A light emitting device including a carrying element having two electric conductors connectable to a power source, a light emitting element disposed on the carrying element and electrically connected to the two electric conductors, and at least one correction element electrically connected to the light emitting element, wherein the light emitting element is adapted to provide a light source upon connection of the two electric conductors with the power source, and the at least one correction element allows the light emitting element to have functions of temperature compensation, voltage correction, or surge absorption. | 2012-12-27 |
20120326186 | Method for Producing a Luminescence Conversion Element, Luminescence Conversion Element and Optoelectronic Component - A method is provided for producing a luminescence conversion element ( | 2012-12-27 |
20120326187 | SOLID STATE LIGHTING DEVICES WITH IMPROVED CURRENT SPREADING AND LIGHT EXTRACTION AND ASSOCIATED METHODS - Solid state lighting (“SSL”) devices with improved current spreading and light extraction and associated methods are disclosed herein. In one embodiment, an SSL device includes a solid state emitter (“SSE”) that has a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device can further include a first contact on the first semiconductor material and a second contact on the second semiconductor material and opposite the first contact. The second contact can include one ore more interconnected fingers. Additionally, the SSL device can include an insulative feature extending from the first contact at least partially into the first semiconductor material. The insulative feature can be substantially aligned with the second contact. | 2012-12-27 |
20120326188 | REFLECTIVE POCKETS IN LED MOUNTING - An LED device with improved LED efficiency is presented. An LED die is positioned within a pocket formed by a substrate and an opening in a supporting layer arranged thereon. The increase in the LED efficiency is achieved by providing a device where at least a portion of the pocket surface is reflective. This portion of the pocket surface is reflective because it is covered by either a reflective layer of foil or film, or a reflective coating, or it is polished. | 2012-12-27 |
20120326189 | Electrode Including Magnetic Material and Organic Light Emitting Device Including the Electrode - An electrode, which includes a magnetic material to improve the flow of charges, and an organic light emitting device using the electrode. The electrode for the organic light emitting device has an excellent charge injection property, so that it is possible to improve the efficiency of light emission of the organic light emitting device. | 2012-12-27 |
20120326190 | ANODE CONTAINING METAL OXIDE AND ORGANIC LIGHT EMITTING DEVICE HAVING THE SAME - An anode for an organic light emitting device which introduces a metal oxide to improve flows of charges, and an organic light emitting device using the anode. The anode for the organic light emitting device has excellent charge injection characteristics, thereby improving power consumption of the organic light emitting device. | 2012-12-27 |
20120326191 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light emitting device, including a substrate, an epitaxy layer and an interference thin film is provided. The substrate has a first surface and a second surface opposite to the first surface. The epitaxy layer is disposed on the first surface. The interference thin film is disposed on the second surface. The interference thin film is formed by a plurality of first-material thin films and a plurality of second-material thin films alternately stacked with one another. The difference in refractive index between the first-material and second-material thin films is at least 0.7. The reflection spectrum of the interference thin film has at least one pass band, which allows an incident light of a specific wavelength to pass through. For example, the central wavelength of the incident light ranges 532±10 nm or 1064±10 nm, and the reflectance of the incident light is smaller than 40%. | 2012-12-27 |
20120326192 | Materials and Methods for Organic Light-Emitting Device Microcavity - The present teachings provide methods for forming organic layers for an organic light-emitting device (OLED) using a thermal printing process. The method can further use one or more additional processes, such as vacuum thermal evaporation (VTE), to create an OLED stack. OLED stack structures are also provided wherein at least one of the charge injection or charge transport layers is formed by a thermal printing method at a high deposition rate. The organic layer can be subject to post-deposition treatment such as baking. The structure of the organic layer can be amorphous, crystalline, porous, dense, smooth, rough, or a combination thereof, depending on deposition parameters and post-treatment conditions. The organic layer can improve light out-coupling efficiency of an OLED, increase conductivity, decrease index of refraction, and/or modify the emission chromaticity of an OLED. An OLED microcavity is also provided and can be formed by one of more of these methods. | 2012-12-27 |
20120326193 | LIGHT EMITTING DEVICE MODULE - Disclosed is a light emitting device module. The light emitting device module includes a first lead frame and a second lead frame electrically separated from each other, a light emitting device electrically connected to the first lead frame and the second lead frame, the light emitting device includes a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a dam disposed at the peripheral area of the light emitting device, a resin layer surrounding the light emitting device and disposed at the inner area of the dam, and a reflective member disposed at the peripheral area of the dam and including an inclined plane formed on at least one side surface thereof. | 2012-12-27 |
20120326194 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - An OLED display according to an exemplary embodiment includes: a substrate; an organic light emitting diode formed on the substrate; an overcoat covering the organic light emitting diode; and a patterned metal sheet attached on the overcoat and having a plurality of protrusion and depression portions. A plurality of protrusions may be formed in a bottom surface of the patterned metal sheet where the protrusion and depression portions of the patterned metal sheet and the overcoat face each other. | 2012-12-27 |
20120326195 | LED MODULE AND MANUFACTURING METHOD THEREOF - There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror and connecting an LED to the second mirror; and depositing a fluorescent material so as to fill a space formed by the first mirror and the second mirror. | 2012-12-27 |
20120326196 | PHOSPHOR AND LEDS CONTAINING SAME - There is herein described a phosphor for use in LED applications and particularly in phosphor-conversion LEDs (pc-LEDs). The phosphor has a composition represented by (Y | 2012-12-27 |
20120326197 | LED ENCAPSULATION RESIN BODY, LED DEVICE, AND METHOD FOR MANUFACTURING LED DEVICE - An LED encapsulation resin body disclosed in the present application includes: a phosphor; a heat resistance material arranged on, or in the vicinity of, a surface of the phosphor; and a silicone resin in which the phosphor with the heat resistance material arranged thereon is dispersed. | 2012-12-27 |
20120326198 | LED STRUCTURE - A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer. | 2012-12-27 |
20120326199 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, a first electrode on the first conductive semiconductor layer, a transparent electrode on the second conductive semiconductor layer, and a second electrode on the transparent electrode. The first electrode includes a first electrode pad on a first region of the first conductive semiconductor layer exposed from the second conductive semiconductor layer and the active layer and a first electrode finger part extending from the first electrode pad toward a second region, in which the first conductive semiconductor layer is exposed. A gap between the transparent electrode and the first electrode finger part is gradually narrowed from the first region toward the second region. | 2012-12-27 |
20120326200 | FLIP-CHIP LIGHT EMITTING DIODE AND METHOD FOR MAKING THE SAME - A flip-chip light emitting diode comprising: a substrate; a circuit layer formed on the substrate, the circuit layer comprising a first electrode and a second electrode separated and electrically insulated from the first electrode; an LED chip arranged on the circuit layer, the LED chip comprising a positive electrode and a negative electrode, the positive electrode and the negative electrode which are located at a bottom face of the LED chip being in electrical connection to the first electrode and the second electrode of the circuit layer by solder, respectively; and a blocking structure located between the positive electrode and the negative electrode, the blocking structure being made of elastic and electrically insulating, colloidal material. | 2012-12-27 |
20120326201 | Light-Emitting Panel, Light-Emitting Device Using the Light-Emitting Panel, and Method for Manufacturing the Light-Emitting Panel - To provide a light-emitting panel in which the occurrence of crosstalk is suppressed. To provide a method for manufacturing a light-emitting panel in which the occurrence of crosstalk is suppressed. The light-emitting panel includes a first electrode of one light-emitting element, a first electrode of the other light-emitting element, and an insulating partition which separates the two first electrodes. A portion with a thickness A | 2012-12-27 |
20120326202 | Photoelectric Transmitting Or Receiving Device And Manufacturing Method Thereof - A photoelectric transmitting or receiving device comprises a substrate, a first conductive layer, a second conductive layer and a photoelectric transducing chip. The substrate has an upper surface and a recess and is made of a composite material. The first conductive layer and the second conductive layer are formed by using laser to activate the composite material of the substrate. The first conductive layer is disposed on the bottom surface of the recess, and is extended outwardly along the inner lateral wall of the recess and the upper surface of the substrate. The second conductive layer is electrically insulated from the first conductive layer and is extended outwardly along the upper surface of the substrate. The photoelectric transducing chip is disposed on the bottom surface of the recess and electrically connected to the first conductive layer and to the second conductive layer, respectively. | 2012-12-27 |
20120326203 | LIGHT EMITTING APPARATUS AND LIGHT UNIT HAVING THE SAME - Provides are a light emitting apparatus and a light unit having the same. The light emitting apparatus comprises a light emitting device comprising a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device. | 2012-12-27 |
20120326204 | ORGANIC LIGHT EMITTING DIODE LIGHTING APPARATUS - An organic light emitting diode lighting apparatus is disclosed. In one embodiment, the apparatus includes: a substrate main body, an organic light emitting element formed on the substrate main body and a sealing cap bonded with the substrate main body and covering and sealing the organic light emitting element. The sealing cap may further include a surface facing the organic light emitting element and the surface is divided into a plurality of thickness parts having different thicknesses. | 2012-12-27 |
20120326205 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - An MQW-structure light-emitting layer is formed by alternately stacking InGaN well layers and AlGaN barrier layers. Each well layer and each barrier layer are formed so as to satisfy the following relations: 12.9≦−2.8x+100y≦37 and 0.65≦y≦0.86, or to satisfy the following relations: 162.9≦7.1x+10z≦216.1 and 3.1≦z≦9.2, here x represents the Al compositional ratio (mol %) of the barrier layer, and y represents the difference in bandgap energy (eV) between the barrier layer and the well layer, and z represents the In compositional ratio (mol %) of the well layer. | 2012-12-27 |
20120326206 | DEVICES WITH ZENER TRIGGERED ESD PROTECTION - Electrostatic discharge (ESD) protection clamps for I/O terminals of integrated circuit (IC) cores comprise a bipolar transistor with an integrated Zener diode coupled between the base and collector of the transistor. Variations in clamp voltage in different parts of the same IC chip or wafer caused by conventional deep implant geometric mask shadowing are avoided by using shallow implants and forming the base coupled anode and collector coupled cathode of the Zener using opposed edges of a single relatively thin mask. The anode and cathode are self-aligned, and the width of the Zener space charge region between them is defined by the opposed edges substantially independent of location and orientation of the ESD clamps on the die or wafer. Because the mask is relatively thin and the anode and cathode implants relatively shallow, mask shadowing is negligible and prior art clamp voltage variations are avoided. | 2012-12-27 |
20120326207 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench. | 2012-12-27 |
20120326208 | PRESSURE CONTACT SEMICONDUCTOR DEVICE - A pressure contact semiconductor device includes a cathode post electrode and a gate electrode formed on a top surface of a substrate, an anode post electrode formed on a bottom surface thereof, a circuit substrate, a cathode flange overlapping the cathode post electrode and connected to the circuit substrate, a cathode fin electrode overlapping the cathode flange, an anode fin electrode underlapping and the anode post electrode, a gate flange connected to both the gate electrode and the circuit substrate, a securing member having a parallel portion parallel to the circuit substrate and a perpendicular portion perpendicular to the circuit substrate, the perpendicular portion being secured to a side of the cathode fin electrode, and a spacer formed from plate material and secured at the top to the parallel portion of the securing member and at the bottom to the circuit substrate. | 2012-12-27 |
20120326209 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional laminate having a plurality of nitride semiconductor layers, the functional laminate includes a first n-type or i-type Al | 2012-12-27 |
20120326210 | METHOD OF MAKING SEMICONDUCTOR MATERIALS AND DEVICES ON SILICON SUBSTRATE - A crystalline structure comprising a substrate, which has a surface. The surface has one or more wells formed therein defining one or more growing area and at least one layer of dissimilar crystalline material epitaxially grown on the growing area. A method of making a crystalline structure having a low threading dislocation density comprising the steps of (a) patterning a surface of a substrate material such that one or more wells defining a growing area is formed therein; and (b) epitaxially growing at least one strained layer of dissimilar crystalline material on the growing area of the surface of the substrate material, such that the threading dislocation density of the at least one strained layer is reduced by the one or more wells. | 2012-12-27 |
20120326211 | BIPOLAR HIGH ELECTRON MOBILITY TRANSISTOR AND METHODS OF FORMING SAME - An epilayer structure includes a field-effect transistor structure and a heterojunction bipolar transistor structure. The heterojunction bipolar transistor structure contains an n-doped subcollector and a collector formed in combination with the field-effect transistor structure, wherein at least a portion of the subcollector or collector contains Sn, Te, or Se. In one embodiment, a base is formed over the collector; and an emitter is formed over the base. The bipolar transistor and the field-effect transistor each independently contain a III-V semiconductor material. | 2012-12-27 |
20120326212 | HIGH k GATE STACK ON III-V COMPOUND SEMICONDUCTORS - A method of forming a high k gate stack on a surface of a III-V compound semiconductor, such GaAs, is provided. The method includes subjecting a III-V compound semiconductor material to a precleaning process which removes native oxides from a surface of the III-V compound semiconductor material; forming a semiconductor, e.g., amorphous Si, layer in-situ on the cleaned surface of the III-V compound semiconductor material; and forming a dielectric material having a dielectric constant that is greater than silicon dioxide on the semiconducting layer. In some embodiments, the semiconducting layer is partially or completely converted into a layer including at least a surface layer that is comprised of AO | 2012-12-27 |
20120326213 | MICROWELL STRUCTURES FOR CHEMICALLY-SENSITIVE SENSOR ARRAYS - Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. | 2012-12-27 |
20120326214 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a semiconductor substrate including an active region defined by an isolation layer; a gate line defining a bit line contact region in the active region and extending in one direction; a dielectric layer covering the semiconductor substrate and the gate line formed in the semiconductor substrate; a bit line contact hole formed in the dielectric layer and exposing the bit line contact region; and a bit line contact spaced apart from a sidewall of the bit line contact hole and formed in the bit line contact hole. | 2012-12-27 |
20120326215 | METHOD FOR FABRICATION OF III-NITRIDE DEVICE AND THE III-NITRIDE DEVICE THEREOF - A III-nitride device is provided comprising a semiconductor substrate; a stack of active layers on the substrate, each layer comprising a III-nitride material; a gate, a source and a drain contact on the stack, wherein a gate, a source and a drain region of the substrate are projections of respectively the gate, the source and the drain contact in the substrate; and a trench in the substrate extending from a backside of the substrate (side opposite to the one in contact with the stack of active layers) to an underlayer of the stack of active layers in contact with the substrate, the trench completely surrounding the drain region, being positioned in between an edge of the gate region towards the drain and an edge of the drain region towards the gate and having a width such that the drain region of the substrate is substantially made of the semiconductor material. | 2012-12-27 |