52nd week of 2013 patent applcation highlights part 15 |
Patent application number | Title | Published |
20130341541 | FLUID DISPENSER REMOTE ACTUATION SYSTEM AND METHOD - This invention relates generally to the dispensing of a fluid. More specifically, the invention relates to an apparatus and method for remotely controlling the flow of an effluent fluid stream from a dispensing hose of a fluid dispenser. An actuator controls at least one valve assembly of the fluid dispenser and comprises a generator located remotely of the at least one valve assembly, for generating a low-pressure signal, and at least one receiver in fluid communication with the generator for receiving the low pressure signal of each receiver operably associated with each valve assembly. The actuator also facilitates the simultaneous, sequential and alternate control of the at least one valve assembly. | 2013-12-26 |
20130341542 | VALVE ACTUATOR - The valve actuator ( | 2013-12-26 |
20130341543 | VALVE - A valve having a housing, a flap rotatably arranged in the housing and connected to a drive shaft mounted in the housing, an electric motor for driving the drive shaft, having a gearing which has at least one toothed segment and which is arranged between the electric motor and the drive shaft, and a sensor, which has a magnet, for determining the angle of rotation of the flap. The toothed segment has at least two detent hooks that engage around the magnet. Furthermore, at least one spring element is provided which preloads the magnet against the detent hooks. | 2013-12-26 |
20130341544 | SOLENOID VALVE - A solenoid valve includes: a valve body having a fitting hole; a tubular sleeve fitted in a fitting hole and having a valve hole, a supply port, and an output port; and a spool valve that is accommodated in the valve hole of the sleeve and that changes a flow passage area between the supply port and the output port by moving axially. A pair of recessed portions is formed in an outer peripheral face of the sleeve, at positions on axially opposite sides of the supply port, so as to extend in the circumferential direction of the sleeve. A strip-shaped first strainer is fitted in the recessed portions. A cutout into which a pressure for suppressing an offset of the central axis of the sleeve from the central axis of the fitting hole, is formed in the sleeve so as to be communicated with the supply port. | 2013-12-26 |
20130341545 | VALVE AND VALVE CARTRIDGE ASSEMBLY THEREOF - A valve cartridge assembly comprises a valve cartridge ( | 2013-12-26 |
20130341546 | SUCTION TUBE ARRANGEMENT WITH IMPROVED ACTUATING SHAFT - A suction tube arrangement includes a suction tube having a suction tube opening and an actuating shaft which is received in the suction tube. The actuating shaft has a base body made of a first material and an actuating shaft body made of a second material and at least partially applied on the base body. The base body or the actuating shaft body forms at least one cover element to open or close the suction tube opening as a function of a rotation of the actuating shaft. An actuating element is at least partially enclosed by the actuating shaft body for actuating the actuating shaft. | 2013-12-26 |
20130341547 | FOUR BAR DRIVE MECHANISM FOR BLEED SYSTEM - An actuation system for a bleed valve includes first and second bell cranks connected by a connecting link. The first bell crank has a first arm that is coupled to a bleed valve and a second arm that is coupled to the connecting link. The connecting link has a first end coupled to the second arm of the first bell crank and a second end coupled to a first arm of the second bell crank. A second arm of the second bell crank is coupled to an actuating element. Input is communicated through the actuating element to move the bleed valve between open and closed positions via the first and second bell cranks. | 2013-12-26 |
20130341548 | CONTAMINATION RESISTANT BUTTERFLY VALVE - A butterfly valve assembly for use in a fluid flow containing particles of debris is provided including a valve element. The valve element has a seal groove that extends about a periphery and defines an upstream side and a downstream side of the valve element. A seal is disposed within the seal groove. A clearance exists between the seal and an edge of the seal groove. Also, a relief is formed in either the valve element or the seal. The particles of debris accumulate in the relief and not the clearance. | 2013-12-26 |
20130341549 | RADIAL SLIDING SEAL WITH SUBASSEMBLY FOR METERING DEVICES, AND METERING DEVICE WITH SUCH A RADIAL SLIDING SEAL SUBASSEMBLY - The invention relates to a radial sliding seal component, particularly for use in metering devices, such as syringes and pipetting piston-cylinder arrangements, comprising a sealing component working together with at least one pretensioning component, wherein the sealing component comprises a sealing segment extending in the axial direction and in the circumferential direction, on which a sealing surface facing in a first radial direction for sealing and sliding contact in at least the axial direction is formed on a working surface extending in the axial direction and in the circumferential direction, and on which a pretensioning surface extending in a second radial direction opposite to the first is formed for engaging with the pretensioning component for transferring the radial pretensioning force, wherein the pretensioning component comprises a spring carrier and a plurality of separately formed radial spring segments compliantly supported at least in the radial direction on the spring carrier. | 2013-12-26 |
20130341550 | TWO-WAY VALVE - A two-way valve includes a valve body made of a resilient member and connected to a lower end of a shaft. The valve body is made up from a main body portion having an axial member connected to the shaft, and a thin film skirt portion formed on an outer circumferential side of the main body portion. An outer edge of the skirt portion is sandwiched and gripped between a small diameter part of a housing and a connector of a body. Further, lips that project in a downward direction are formed in a central portion of the main body portion. The lips are seated on a top portion of a partition wall in the body, so that the two-way valve is placed in a valve-closed state. | 2013-12-26 |
20130341551 | VALVE HOUSING AND ASSEMBLY UNIT COMPRISING A VALVE HOUSING AND METHOD OF MANUFACTURING A VALVE HOUSING - A valve housing comprising an outer pipe section which is formed from a prefabricated pipe and has a connector for a valve actuator, and comprising an inner pipe section with a valve seat which represents a fluidic connection between the outer and inner pipe sections, is provided with a cut-out in the peripheral wall of the outer pipe section. At least a portion of the inner pipe section including the valve seat protrudes into the outer pipe section from outside the outer pipe section, the valve housing being fluid-tight in the region of the cut-out. | 2013-12-26 |
20130341552 | AEROSOL DISPENSER VALVE - An improved valve member, aerosol dispenser valve containing the valve member, aerosol container for dispensing moisture curable foams, and moisture curable foam and dispenser, in which the valve member is made of a glass filled polyolefin. The polyolefin is preferably a polyethylene. The glass content is between about 2% and about 40%, more preferably between about 10% and about 30%; and most preferably between about 15% and about 25%. | 2013-12-26 |
20130341553 | Thermal Suppression Device - An apparatus, method, and means to decrease thermal radiation emitted from firearms consisting of a phase changing material with a large heat capacity. | 2013-12-26 |
20130341554 | MAGNETIC, ACRYLIC STRONGLY BASIC ANION EXCHANGE MICROSPHERE RESIN AND THE MANUFACTURING METHOD THEREOF - This invention relates to the field of resin, particularly to a magnetic, acrylic strongly basic anion exchange microsphere resin and its manufacturing method. Its basic structure is as follow: | 2013-12-26 |
20130341555 | METHOD OF FABRICATING LIQUID-METAL COOLANTS FOR NUCLEAR REACTORS - A method of fabricating a liquid-metal coolant includes adding nanoparticles to the liquid-metal coolant to change neutronic properties of the liquid-metal coolant. The nanoparticles have neutronic properties different from that of the liquid-metal coolant. | 2013-12-26 |
20130341556 | USE OF POLYMER DISPERSIONS AS HEAT EXCHANGE FLUIDS - Heat exchange fluids comprising an aqueous or aqueous-organic dispersion are disclosed. The dispersions have a purely or predominantly aqueous continuous liquid phase, and at least one dispersed phase comprising particles of at least one polymer. Systems for exchanging or storing heat using the heat exchange fluid are also disclosed. | 2013-12-26 |
20130341557 | METHOD FOR REFRESHING AN ACID BATH SOLUTION - A method for refreshing an acid bath solution includes determining a concentration of phosphoric acid in the acid bath solution and determining a concentration of hydrochloric acid in the acid bath solution. The method further includes calculating a volume of phosphoric acid to add to the acid bath solution to achieve a predetermined concentration of phosphoric acid in the acid bath solution. In addition, the method includes calculating a volume of hydrochloric acid to add to the acid bath solution with the volume of phosphoric acid to increase the acid bath solution to a predetermined volume, and adding the volume of phosphoric acid and the volume of hydrochloric acid to the acid bath solution. | 2013-12-26 |
20130341558 | ETCHING SOLUTION FOR COPPER LEAD OF TFT ARRAY SUBSTRATE - The present invention relates to an etching solution for copper lead of TFT array substrate, which includes: primary oxidant, secondary oxidant, chelating agent, inhibitor, and additive. The primary oxidant is hydrogen peroxide and the secondary oxidant is phosphoric acid, sulfuric acid, and nitric acid. The chelating agent is amino compound. The inhibitor is amino azole compound and carboxylate compound. The additive is amine compound containing amino nitrogen and coordinating carboxylate oxygen atom. Through adoption of novel components and types of chelating agent and additive, the etching solution improves the characteristics of relatively short process window for copper lead etching solution, reduces the difficult of engineering control, improves stability of engineering operation and improves yield rate, increases stability of shelf time to thereby provide stable etching performance even in the rear half of shelf time, and extends lifespan (≧5000 ppm). | 2013-12-26 |
20130341559 | COMPOSITE MATERIALS AND PROCESS FOR PRODUCTION THEREOF - A process for producing a composite material comprising
| 2013-12-26 |
20130341560 | NEGATIVE ELECTRODE ACTIVE MATERIAL FOR ELECTRIC DEVICE - A negative electrode active material for an electric device includes an alloy containing silicon in a range from 25% to 54% exclusive, carbon in a range from 1% to 47% exclusive, zinc in a range from 13% to 69% exclusive in terms of mass ratio, and inevitable impurities as a residue. For example, the negative electrode active material can be obtained with a multi DC magnetron sputtering apparatus by use of silicon, carbon and zinc as targets. An electric device using this negative electrode active material can improve the initial charge-discharge efficiency while keeping the cycle property. | 2013-12-26 |
20130341561 | ELECTROCHEMICAL DEBLOCKING SOLUTION FOR ELECTROCHEMICAL OLIGOMER SYNTHESIS ON AN ELECTRODE ARRAY - There is disclosed an electrochemical deblocking solution for use on an electrode microarray. There is further disclosed a method for electrochemical synthesis on an electrode array using the electrochemical deblocking solution. The solution and method are for removing acid-labile protecting groups for synthesis of oligonucleotides, peptides, small molecules, or polymers on a microarray of electrodes while substantially improving isolation of deblocking to active electrodes. The method comprises applying a voltage or a current to at least one electrode of an array of electrodes. The array of electrodes is covered by the electrochemical deblocking solution. | 2013-12-26 |
20130341562 | TRIMERIZATION CATALYSTS FROM STERICALLY HINDERED SALTS - The present invention provides trimerization catalyst compositions having a sterically hindered carboxylate salt and methods to produce a polyisocyanurate/-polyurethane foam using such trimerization catalyst compositions. | 2013-12-26 |
20130341563 | COMPOSITE ABSORBENT FOR CATALYST RESIDUES REMOVAL FROM POLYOLEFIN SOLUTION POLYMERIZATION MIXTURE - A solid shaped composite adsorbent for reducing deactivated catalyst residues and contaminants from a post polyolefin solution polymerization mixture is disclosed. The composite adsorbent comprises 70-90 wt % of an alumina component; 30-10 wt % of a clay component; and 0.5-3.5 wt % of at least one alkali metal component selected from the group consisting of elements in Group 1A of the modern periodic table. | 2013-12-26 |
20130341564 | CAPTURE MASS COMPOSED OF ELEMENTAL SULPHUR DEPOSITED ON A POROUS SUPPORT FOR CAPTURING HEAVY METALS - The present invention concerns the elimination of heavy metals, in particular mercury and possibly arsenic and lead, present in a dry or moist gaseous effluent ( | 2013-12-26 |
20130341565 | LIQUID CRYSTAL MOLECULE HAVING FLEXIBLE STRUCTURE AND MIXTURE FOR THE SAME - The present invention discloses a liquid crystal (LC) molecule having a flexible structure and a mixture thereof. A traditional LC molecule is modified into the LC molecule having the flexible structure. The wetting ability of the LC molecule within a color-filter-on-array (COA) type LC panel is increased by properties of the flexible structure, so that the LC molecule having the flexible structure can obtain better diffusing performance than that of the traditional LC molecule. The present invention can increase the wetting ability of the LC molecule within an LC panel by modification of the flexible structure of the LC molecule, and thus the problem of drop Mura effect in the COA type LC panel can be improved. | 2013-12-26 |
20130341566 | POLYMER-STABILIZED OPTICAL ISOTROPIC LIQUID CRYSTAL FORMULATION AND OPTICAL ISOTROPIC LIQUID CRYSTAL DEVICE - An embodiment provides a polymer-stabilized optical isotropic liquid crystal formulation, including 50 to 99.5 parts by weight of an optical isotropic liquid crystal material; and 0.5 to 50 parts by weight of polymer, wherein the polymer is polymerized by an acrylic monomer containing fluorine groups and an acrylic monomer with a liquid crystal phase and/or an acrylic monomer without a liquid crystal phase. | 2013-12-26 |
20130341567 | Process for Recycling Solvent Used in an Ethylene-Based Polymerization Reaction and System Therefor - A process for recycling solvent used in an ethylene-based polymerization comprising: passing a solvent stream which has been used in a first ethylene-based solvent polymerization reactor through an online purification bed to produce a recycle solvent stream, wherein the solvent stream prior to being passed through the online purification bed comprises solvent, ethylene, hydrogen, polymerization by-products and optionally comonomer; and passing the recycle solvent stream from the online purification bed to a second ethylene-based solvent polymerization reactor; wherein the second ethylene-based solvent polymerization reactor exhibits a catalyst efficiency dip of less than or equal to 20% for no longer than a forty-eight hour period following a swap of the online purification bed to a regenerated purification bed which contains an adsorbent having low reactivity to alkenes is provided. | 2013-12-26 |
20130341568 | COMPOSITIONS FOR EXTENDING ION SOURCE LIFE AND IMPROVING ION SOURCE PERFORMANCE DURING CARBON IMPLANTATION - A novel method and system for extending ion source life and improving ion source performance during carbon implantation are provided. Particularly, the carbon ion implant process involves utilizing a dopant gas mixture comprising carbon monoxide and one or more fluorine-containing gas with carbon represented by the formula CxFy wherein x≧1 and y≧1. At least one fluorine containing gases with carbon is contained in the mixture at about 3-12 volume percent (vol %) based on the volume of the dopant gas mixture. Fluoride ions, radicals or combinations thereof are released from the ionized dopant gas mixture and reacts with deposits derived substantially from carbon along at least one of the surfaces of the repeller electrodes, extraction electrodes and the chamber to reduce the overall amount of deposits. In this manner, a single dopant gas mixture provides carbon ions and removes problematic deposits typically encountered during carbon implantation. | 2013-12-26 |
20130341569 | PRETREATMENT OF BIOMASS USING STEAM EXPLOSION METHODS - An integrated plant that includes a steam explosion process unit and biomass gasifier to generate syngas from biomass. A steam explosion process unit applies a combination of heat, pressure, and moisture to the biomass to make the biomass into a moist fine particle form. The steam explosion process unit applies steam with a high pressure to heat and pressurize any gases and fluids present inside the biomass to internally blow apart the bulk structure of the biomass via a rapid depressurization of the biomass with the increased moisture content. Those produced moist fine particles of biomass are subsequently fed to a feed section of the biomass gasifier, which reacts the biomass particles in a rapid biomass gasification reaction to produce syngas components. | 2013-12-26 |
20130341570 | METHOD FOR DISPERSING CARBON NANOTUBES USING CHONDROITIN SULFATE CATION SALT - The present invention relates to a method for dispersing carbon nanotubes. The method may include contacting the carbon nanotubes with a solution containing chondroitin sulfate cation salt of formula (I) wherein R | 2013-12-26 |
20130341571 | METALLIC COMPOSITE COMPOSITION AND MIXTURE THEREOF - A metallic composite composition containing: a metallic composite in which a conjugated compound having a molecular weight of 200 or more is adsorbed to a metallic nanostructure having an aspect ratio of 1.5 or more, and an ionic compound, with the proviso that when the ionic compound is a conjugated compound, the ionic compound is a conjugated compound having a molecular weight of less than 200. A mixture containing the metallic composite composition and a conjugated compound having a molecular weight of 200 or more. The ionic compound may be a compound having a structure represented by Formula (hh-1) below: | 2013-12-26 |
20130341572 | NOVEL COMPOUND AND PHOTOELECTRIC CONVERSION DEVICE - Disclosed is a novel compound represented by formula ( | 2013-12-26 |
20130341573 | PHOTOREFRACTIVE COMPOSITION COMPRISING ELECTROLYTES IN A PHOTOREFRACTIVE LAYER AND METHOD OF MAKING THEREOF - A photorefractive composition and a photorefractive device comprising the composition are disclosed. The composition is configured to be photorefractive upon irradiation by a laser having a wavelength in the visible light spectrum and comprises a polymer, a non linear optical chromophore, a plasticizer, and an electrolyte. In an embodiment, the percentage of polymer recurring units that comprise a charge transport moiety is less than 30%. In an embodiment, the electrolyte comprises one or more of ammonium salts, heterocyclic ammonium salts, and phosphonium salts. In an embodiment, the polymer is selected from the group consisting of polycarbonate, polyurea, polyurethane, poly(meth)acrylate, polyester, polyimide, and combinations thereof. Preferably, the composition has a diffraction efficiency of about 25% or greater upon irradiation with a visible light laser. | 2013-12-26 |
20130341574 | PHOTOREFRACTIVE COMPOSITION AND DEVICE COMPRISING THE COMPOSITION - A photorefractive composition and a photorefractive device comprising the composition are disclosed. The composition is configured to be photorefractive upon irradiation by a laser having a wavelength in the visible light spectrum and comprises a polymer, a non linear optical chromophore, and a plasticizer. In an embodiment, the percentage of polymer recurring units that comprise a charge transport moiety is less than 30%. In an embodiment, the polymer is selected from the group consisting of polycarbonate, polyurea, polyurethane, poly(meth)acrylate, polyester, polyimide, and combinations thereof. Preferably, the composition has a diffraction efficiency of about 30% or greater upon irradiation with a visible light laser. | 2013-12-26 |
20130341575 | New flame retardant and composition containing it - Ethyleneamine polyphosphates are good flame retardants. Use of non viscous phase enables making modified ethyleneamine polyphosphate of enhanced thermal stability and greatly reduced waste stream. Addition of fillers such as fumed silica unexpectedly improve the flame retardance. Organic phosphates improve compatibility. | 2013-12-26 |
20130341576 | TREE JACK AND ITS METHOD OF USE - One possible embodiment of the invention could be a tree jack comprising an extension member that connects to a telescopic mechanism; the telescopic mechanism being proximate to a base tube, the telescopic mechanism moves the extension member away from the base tube; the base tube has two tube ends, an open tube end and other tube end, the open tube end continuously connects to a hollow interior that accepts the extension member, the open tube end further supports the telescopic mechanism; a base platform that attaches to the base tube at the other tube end; wherein the extension member is placed into a tree having a list while the base platform supports the tree jack relative to a ground proximate to the tree, the telescopic mechanism forcibly extends the length of the tree jack to reduce the list of the tree. | 2013-12-26 |
20130341577 | HAMMER WITH LEVERAGE NO. II - A hand tool includes an elongated plunger assembly and a locking assembly. The locking assembly has a catch assembly with a release actuator. The release actuator is movable in a direction generally not aligned with the tool head plane of motion. The locking assembly catch member is structured to engage the plunger assembly body and maintain the plunger assembly body in a selected position. Further, the plunger assembly is disposed in a socket within the tool head and biased toward an extended position by a spring. The release actuator is, preferably, disposed on the neck of the hand tool just above the user's thumb. When the plunger assembly body is disposed within the tool head and a user desires to extend the plunger assembly, the user actuates the release actuator thereby removing the engagement of the catch member and allowing the socket spring to move the plunger assembly body to the extended position. | 2013-12-26 |
20130341578 | Line Hauler with Dualler Plate and Line Coiler - An improved line hauler is provided that has a dualler plate located between the two plates of the sheave. The dualler plate creates two V-channels for the line and the line therefore can be directed on a path that results in a hands free line hauler that is slip free. A line coiler is also provided that promotes coiling of the line as it drops to the boat deck. | 2013-12-26 |
20130341579 | JACK ASSEMBLY - An improved jack assembly for use with a trailer tongue of a towed vehicle. The jack assembly including telescoping height adjustment of the assembly, a pivot assembly for pivoting between a vertical and horizontal stowed position, and a clip for maintaining a handle assembly in a stowed position when not in use. The jack assembly also includes the use of bushings for the telescoping tubes to enhance the sliding movement between the tubes and aid in maintaining the axial alignment of the tubes thereby extending the life of the jack assembly. The pivot assembly further includes an attachment bracket that may be rotated to accommodate at least two different sizes of trailer tongues. | 2013-12-26 |
20130341580 | CUSTOMIZABLE FENCING SYSTEM AND METHOD - Disclosed is a system and method for a decorative, easy to install privacy fencing system and method therefor. A customizable fencing and privacy enclosure system is provided comprising vertical clamp members and a preferably decorative fabric sheet providing at least some level of ventilation therethrough, such system being configured for attachment to existing fence posts or newly installed fence posts. Such system is comprised of a small number of simplistic components that allow a do-it-yourself homeowner (or other person not particularly advanced as a skilled craftsman) to easily install, customize, and adjust the system to fit the homeowner's particular needs and aesthetic desires. | 2013-12-26 |
20130341581 | DEVICE, A METHOD FOR MEASURING TEMPERATURE AND A PROGRAMMABLE INSULATOR-SEMICONDUCTOR BIPOLAR TRANSISTOR - A memory device, a programmable insulator-semiconductor bipolar transistor (PISBT) and a method for measuring a temperature of a filament, the method may include: providing base voltages of different values to a base of the PISBT; obtaining measurement results by measuring a minority carrier current that flows from a collector of the PISBT in response to the providing of the base voltages of the different values; and calculating the temperature of the filament, based upon the measurement results; wherein the filament is formed in a variable resistance layer of the PISBT when the PISBT is programmed to a certain value out of multiple programmable values, wherein the filament facilitates a flow of minority carriers from an emitter of the PISBT. | 2013-12-26 |
20130341582 | NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY DEVICE GROUP, AND MANUFACTURING METHOD THEREOF - A nonvolatile memory device group includes: (A) a first insulating layer; (B) a second insulating layer that has a first concavity and a second concavity communicating with the first concavity and having a width larger than that of the first concavity and that is disposed on the first insulating layer; (C) a plurality of electrodes that are disposed in the first insulating layer and the top surface of which is exposed from the bottom surface of the first concavity; (D) an information storage layer that is formed on the side walls and the bottom surfaces of the first concavity and the second concavity; and (E) a conductive material layer that is filled in a space surrounded with the information storage layer in the second concavity. | 2013-12-26 |
20130341583 | RESISTIVE MEMORY AND FABRICATING METHOD THEREOF - A resistive memory and a fabricating method thereof are provided. The resistive memory includes first and second electrodes, a variable resistance material layer, a first dielectric layer, and a second dielectric layer. The first electrode includes a first portion and a second portion. The second electrode is disposed opposite to the first electrode. The variable resistance material layer includes a sidewall and first and second surfaces opposite to each other, wherein the first surface is connected with the first portion of the first electrode and the second surface is electrically connected with the second electrode. The second portion surrounds the sidewall of the variable resistance material layer and is connected with the first portion. The first dielectric layer is disposed between the first and the second electrodes. The second dielectric layer is disposed between the variable resistance material layer and the second portion of the first electrode. | 2013-12-26 |
20130341584 | Resistive-Switching Memory Elements Having Improved Switching Characteristics - Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness. | 2013-12-26 |
20130341585 | VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR STORAGE DEVICE - A variable resistance element is formed by sandwiching a metal oxide layer whose resistance changes between a pair of electrodes and the metal oxide layer includes a pair of variable resistance layers whose resistances change by formation of a current path and a branching suppression layer which is sandwiched between the variable resistance layers and suppresses branching of the current path. | 2013-12-26 |
20130341586 | Memory Structures, Memory Arrays, Methods of Forming Memory Structures and Methods of Forming Memory Arrays - Some embodiments include methods of forming memory structures. An electrically insulative line is formed over a base. Electrode material is deposited over the line and patterned to form a pair of bottom electrodes along the sidewalls of the line. Programmable material is formed over the bottom electrodes, and a top electrode is formed over the programmable material. The bottom electrodes may each contain at least one segment which extends at angle of from greater than 0° to less than or equal to about 90° relative to a planar topography of the base. Some embodiments include memory structures having a bottom electrode extending upwardly from a conductive contact to a programmable material, with the bottom electrode having a thickness of less than or equal to about 10 nanometers. Some embodiments include memory arrays and methods of forming memory arrays. | 2013-12-26 |
20130341587 | Memory Arrays and Methods of Forming Memory Cells - Some embodiments include methods of forming memory cells. A stack includes ovonic material over an electrically conductive region. The stack is patterned into rails that extend along a first direction. The rails are patterned into pillars. Electrically conductive lines are formed over the ovonic material. The electrically conductive lines extend along a second direction that intersects the first direction. The electrically conductive lines interconnect the pillars along the second direction. Some embodiments include a memory array having first electrically conductive lines extending along a first direction. The lines contain n-type doped regions of semiconductor material. Pillars are over the first conductive lines and contain mesas of the n-type doped regions together with p-type doped regions and ovonic material. Second electrically conductive lines are over the ovonic material and extend along a second direction that intersects the first direction. The second electrically conductive lines interconnect the pillars along the second direction. | 2013-12-26 |
20130341588 | QUANTUM ROD LIGHT-EMITTING DISPLAY DEVICE - A quantum rod light-emitting display device according to an embodiment of the invention includes a display panel including a first substrate, a second substrate opposite to the first substrate, and a quantum rod layer disposed between the first substrate and the second substrate, wherein quantum rods in the quantum rod layer are arranged in one direction; a backlight unit provided under the display panel and configured to provide light to the display panel; and a short-wavelength pass filter film formed between the display panel and the backlight unit, and configured to transmit the light having a predetermined wavelength range. | 2013-12-26 |
20130341589 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer. | 2013-12-26 |
20130341590 | Quantum Dot Narrow-Band Downconverters for High Efficiency LEDs - The present disclosure is directed to LED components, methods and systems using such components, having light emitter devices with emissions tuned to meet CRI and LER goal values at a defined CCT. These emitter devices and methods may use a combination of light emitting diodes and quantum dots to tune the emission to meet these criteria. The quantum dots may incorporate additional features to protect the quantum dots from environmental conditions and improve heat dissipation, such as coatings and thermally conductive features. | 2013-12-26 |
20130341591 | LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF - The present invention relates to a light emitting diode (LED) structure and a manufacturing method thereof. A first semiconductor stacking layer consisting of a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer and a second type light-guiding layer is sequentially formed on a semiconductor substrate. Partial of the first type semiconductor layer, the light-emitting layer, the second type semiconductor layer and the second type light-guiding layer is removed. A second semiconductor stacking layer consisting of the first type semiconductor layer, the light-emitting layer, the second type semiconductor layer and the second type light-guiding layer is defined in a light-emitting area. A transparent conductive layer is formed on a surface of the second type light-guiding layer of the second semiconductor stacking layer. | 2013-12-26 |
20130341592 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. | 2013-12-26 |
20130341593 | GROUP III NITRIDE BASED QUANTUM WELL LIGHT EMITTING DEVICE STRUCTURES WITH AN INDIUM CONTAINING CAPPING STRUCTURE - Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum. | 2013-12-26 |
20130341594 | SINGLE-PHOTON NANO-INJECTION DETECTORS - Single-photon detectors, arrays of single-photon detectors, methods of using the single-photon detectors and methods of fabricating the single-photon detectors are provided. The single-photon detectors combine the efficiency of a large absorbing volume with the sensitivity of nanometer-scale carrier injectors, called “nanoinjectors”. The photon detectors are able to achieve single-photon counting with extremely high quantum efficiency, low dark count rates, and high bandwidths. | 2013-12-26 |
20130341595 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - Semiconductor devices including a substrate (e.g., silicon substrate), a multi-layer structure disposed on a portion of the substrate, and at least one electrode disposed on the multi-layer structure and methods of manufacturing the same are provided. The multi-layer structure may include an active layer containing a Group III-V material and a current blocking layer disposed between the substrate and the active layer. The semiconductor device may further include a buffer layer disposed between the substrate and the active layer. In a case that the substrate is a p-type, the buffer layer may be an n-type material layer and the current blocking layer may be a p-type material layer. The current blocking layer may contain a Group III-V material. A mask layer having an opening may be disposed on the substrate so that the multi-layer structure may be disposed on the portion of the substrate exposed by the opening. | 2013-12-26 |
20130341596 | NANOWIRE FET AND FINFET - A complimentary metal oxide semiconductor (CMOS) device includes a wafer having a buried oxide (BOX) layer having a first region with a first thickness and a second region with a second thickness, the first thickness is less than the second thickness, a nanowire field effect transistor (FET) arranged on the BOX layer in the first region, the nanowire FET, and a finFET arranged on the BOX layer in the second region. | 2013-12-26 |
20130341597 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display including a display panel, a chip on film, and a printed circuit (PCB) is disclosed. In one embodiment, the display panel includes a display area having an OLED and a pixel circuit, and a pad area in an outer side of the display area. The chip on film is connected to the pad area, is bent toward a non-luminescent surface of the display panel, and include an integrated circuit chip. The PCB includes at least a part overlapping with the chip on film in an outer side of the non-luminescent surface of the display panel, and an opening for receiving the integrated circuit. | 2013-12-26 |
20130341598 | ORGANIC LAYER DEPOSITION APPARATUS, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS USING THE SAME, AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS MANUFACTURED USING THE METHOD - An organic layer deposition apparatus, a method of manufacturing an organic light-emitting display device by using the same, and an organic light-emitting display device manufactured using the method, and in particular, an organic layer deposition apparatus that is suitable for use in the mass production of a large substrate and enables high-definition patterning, a method of manufacturing an organic light-emitting display device by using the same, and an organic light-emitting display device manufactured using the method. | 2013-12-26 |
20130341599 | Phosphorescent Emitters - Heteroleptic compounds containing phenylpyridine and phenylbenzimidazole are provided. The compounds may be used in organic light emitting devices, particularly as emissive dopants in the emissive layer of such devices. | 2013-12-26 |
20130341600 | PHOSPHORESCENT EMITTERS - A phenzasilin comprising compound, and devices and formulations including the same are described. The compound includes a ligand L | 2013-12-26 |
20130341601 | DONOR SUBSTRATES, LASER INDUCED THERMAL IMAGING METHODS USING DONOR SUBSTRATES AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES USING DONOR SUBSTRATES - A donor substrate includes a base substrate, a light to heat conversion layer, a buffer layer and a transfer layer. The light to heat conversion layer may be disposed on the base substrate. The buffer layer may be disposed on the light to heat conversion layer. The buffer layer may include at least one porous layer having a plurality of pores. The transfer layer may be disposed on the buffer layer. | 2013-12-26 |
20130341602 | ORGANIC ELECTROLUMINESCENCE DEVICE, LIGHTING EQUIPMENT AND DISPLAY DEVICE - Provided are an organic electroluminescence device which has a high luminous efficiency, a low operating voltage and a long life and which is low in a voltage rise in operation and excellent in an ageing stability and has an aptitude in production by the wet process, and a lighting equipment and a display device which are prepared by using the same. | 2013-12-26 |
20130341603 | DISPLAY - Disclosed herein is a display including an acceptor substrate having thereon a red light-emitting element column, a green light-emitting element column, and a blue light-emitting element column that are arranged along a row direction and are each obtained by arranging rectangular organic light-emitting elements for generating light of one of red, green, and blue along a longitudinal direction of the organic light-emitting elements. | 2013-12-26 |
20130341604 | COMPOUND HAVING SUBSTITUTED ANTHRACENE RING STRUCTURE AND PYRIDOINDOLE RING STRUCTURE AND ORGANIC ELECTROLUMINESCENCE DEVICE - The present invention provides an organic compound having excellent properties, which is excellent in electron-injection/transport performance, has hole-blocking ability and is high stability in a thin-film state, as a material for an organic electroluminescence device having a high efficiency and a high durability, and provides is an organic electroluminescence device having a high efficiency and a high durability using the compound. The present invention relates to a compound having a substituted anthracene ring structure and a pyridoindole ring structure represented by general formula (1); and an organic electroluminescence device having a pair of electrodes and at least one organic layer interposed between the electrodes in which the at least one organic layer contains the compound. | 2013-12-26 |
20130341605 | Substrate For OLED And Method Of Manufacturing The Same - A substrate for an organic light-emitting device (OLED) and a method of manufacturing the same, in which the light extraction efficiency and process efficiency of the OLED can be improved. The substrate for an OLED that includes a base substrate, a first metal oxide thin film coating one surface of the base substrate, the first metal oxide thin film having a first texture on a surface thereof, a second metal oxide thin film coating the other surface of the base substrate, and a third metal oxide thin film coating a surface of the second metal oxide thin film. | 2013-12-26 |
20130341606 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A light-emitting element includes an anode, a cathode, a luminescent layer disposed between the anode and the cathode and containing a host material, a first luminescence-assisting layer disposed in contact with the luminescent layer between the anode and the luminescent layer and containing a first luminescence-assisting material having characteristics the same as or similar to the host material, and a second luminescence-assisting layer disposed in contact with the luminescent layer between the cathode and the luminescent layer and containing a second luminescence-assisting material having characteristics the same as or similar to the host material. The luminescent layer and the first luminescence-assisting layer each contain a high-molecular-weight material. | 2013-12-26 |
20130341607 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - Discussed is a method of fabricating an organic light emitting diode display device capable of simplifying a manufacturing process by forming a photoresist pattern to cover a metal pattern to prevent a hole common layer and an electron common layer from being formed on the metal pattern. | 2013-12-26 |
20130341608 | Composite Material, Light-Emitting Element, Light-Emitting Device, and Manufacturing Method Thereof - It is an object of the present invention to provide a composite material that can be used for manufacturing a heat-resistant light-emitting element, provide a composite material that can be used for manufacturing a heat-resistant light-emitting element that can be driven with stability for a long period of time, and further, provide a composite material that can be used for manufacturing a light-emitting element that easily prevents short circuit between electrodes and uses less power. The present invention provides a composite material that has a first metal oxide skeleton including a first metal atom and an organic compound that is bound to the first metal atom by forming a chelate, where the first metal oxide exhibits an electron accepting property to the organic compound. | 2013-12-26 |
20130341609 | HIGH EFFICIENCY YELLOW LIGHT EMITTERS FOR OLED DEVICES - Novel heteroleptic iridium complexes are described. These iridium compounds contain alkyl substituted phenylpyridine ligands, which provide these compounds with beneficial properties when the iridium complexes are incorporated into OLED devices. | 2013-12-26 |
20130341610 | TRANSPARENT ORGANIC LIGHT EMITTING DIODE LIGHTING DEVICE - Provided is a transparent organic light emitting diode (OLED) lighting device in which opaque metal reflectors are formed to adjust light emitting directions. The transparent OLED lighting device includes a transparent substrate, a transparent anode formed on a predetermined region of the transparent substrate, a reflective anode formed adjacent to the transparent anode on another region of the transparent substrate, an organic layer formed on the transparent and reflective anodes, and a transparent cathode and an encapsulation substrate sequentially stacked on the organic layer. Directions of light emitted from the organic layer vary depending on the current applied to the transparent and reflective anodes. | 2013-12-26 |
20130341611 | Methods of Applying Polymers to Surfaces and Surfaces Coated by Polymers - Disclosed herein, in certain embodiments, is a method of depositing a polymer onto a surface. In some embodiments, the method comprises using a high electric field and a high frequency vibratory motion to deposit a polymer solution onto the surface. | 2013-12-26 |
20130341612 | ORGANIC ELECTROLUMINESCENCE ELEMENT - Provided is an organic EL element having a high emission efficiency, a light emission life, and excellent high-temperature preservation stability. This organic electroluminescence element has at least one light-emitting layer between a positive electrode and a negative electrode. The light-emitting layer comprises at least one type of light-emitting dopant and at least three types of non-emitting organic materials represented by general formula (2); of the non-emitting organic materials, the material with the largest molecular weight has a molecular weight of 1,500 or less; and the minimum content of the non-emitting organic materials is 1 mass % or greater. | 2013-12-26 |
20130341613 | LIGHT EMITTING DEVICE MATERIAL AND LIGHT EMITTING DEVICE - Provided are a light emitting device material which contains a compound having a carbazole skeleton of a specific structure and which makes it possible to achieve a light emitting device having both high luminance efficiency and durability; and a light emitting device using the light emitting device material. | 2013-12-26 |
20130341614 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer. | 2013-12-26 |
20130341615 | SEMICONDUCTOR DEVICE - A semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and does not have a limitation on the number of write cycles. The semiconductor device includes a memory cell including a first transistor, a second transistor, and an insulating layer placed between a source region or a drain region of the first transistor and a channel formation region of the second transistor. The first transistor and the second transistor are provided to at least partly overlap with each other. The insulating layer and a gate insulating layer of the second transistor satisfy the following formula: (t | 2013-12-26 |
20130341616 | DISPLAY DEVICE AND ELECTRONIC DEVICE - An object of the invention is to provide a circuit technique which enables reduction in power consumption and high definition of a display device. A switch controlled by a start signal is provided to a gate electrode of a transistor, which is connected to a gate electrode of a bootstrap transistor. When the start signal is input, a potential is supplied to the gate electrode of the transistor through the switch, and the transistor is turned off. The transistor is turned off, so that leakage of a charge from the gate electrode of the bootstrap transistor can be prevented. Accordingly, time for storing a charge in the gate electrode of the bootstrap transistor can be shortened, and high-speed operation can be performed. | 2013-12-26 |
20130341617 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR HAVING SAID OXIDE, AND THIN-FILM TRANSISTOR - The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])≦0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])≧0.5. [In]/([In]+[Zn]+[Sn])≦0.3 - - - (1), [In]/([In]+[Zn]+[Sn])≦1.4×{[Zn]/([Zn]+[Sn])}−0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])≦0.83 - - - (3), and 0.1≦[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching. | 2013-12-26 |
20130341618 | Shift Register And Display Device And Driving Method Thereof - The power consumption of a shift register or a display device including the shift register is reduced. A clock signal is supplied to a shift register by a plurality of wirings, not by one wiring. Any one of the plurality of wirings supplies a clock signal in only part of the operation period of the shift register, not during the whole operation period of the shift register. Therefore, the capacity load caused with the supply of clock signals can be reduced, leading to reduction in power consumption of the shift register. | 2013-12-26 |
20130341619 | Ultraviolet Sensor and Method for Producing the Same - An ultraviolet sensor having a p-type semiconductor layer containing, as its main constituent, a solid solution of NiO and ZnO, and an n-type semiconductor layer containing ZnO as its main constituent, which is joined to the p-type semiconductor layer such that a portion of the p-type semiconductor layer is exposed. An internal electrode is buried in the p-type semiconductor layer and opposed to the n-type semiconductor layer. Both ends of the internal electrode are exposed at both end surfaces of the p-type semiconductor layer, and first and second high-resistance layers composed of insulating materials cover one end of the internal electrode. The second high-resistance layer is obtained by diffusion of the insulating material from the first high-resistance layer into the p-type semiconductor layer. A first external electrode is connected to the other end of the internal electrode, and a second external electrode is connected to the n-type semiconductor layer. | 2013-12-26 |
20130341620 | Monitor Structures and Methods of Formation Thereof - In accordance with an embodiment of the present invention, a method of forming an electronic device includes forming a first opening and a second opening in a workpiece. The first opening is deeper than the second opening. The method further includes forming a fill material within the first opening to form part of a through via and forming the fill material within the second opening. | 2013-12-26 |
20130341621 | Electrical Device and Method for Manufacturing Same - An electrical device includes a first layer, a second layer and an intrinsic layer. The first layer is of a first conductivity type, wherein the second layer is of a second conductivity type opposite to the first conductivity type. The intrinsic layer is arranged between the first and the second layer and has a reduced thickness at at least one portion. An area of the at least one portion is less than 50% of an active area in which the first and second layer face each other. | 2013-12-26 |
20130341622 | Polycrystalline Silicon Wafer - Provided is a polycrystalline silicon wafer produced by a melting and unidirectional solidification method, where the polycrystalline silicon wafer has a diameter of 450 mm or more, a thickness of 900 μm or more, and an average crystal grain size of 5 to 50 mm, and is made up of one piece. The present invention provides a large-sized polycrystalline silicon wafer having a wafer size of 450 mm or more, of which: mechanical properties are similar to those of monocrystalline silicon wafers; the crystal size is large; the surface roughness is low; the surface has a high cleanliness; the polished surface has less unevenness by having a definite crystal orientation; and the sag value is similar to that of monocrystalline silicon wafers. | 2013-12-26 |
20130341623 | PHOTORECEPTOR WITH IMPROVED BLOCKING LAYER - A photoreceptor includes a multilayer blocking structure to reduce dark discharge of the surface voltage of the photoreceptor resulting from electron injection from an electrically conductive substrate. The multilayer blocking structure includes wide band gap semiconductor layers in alternating sequence with one or more narrow band gap blocking layers. A fabrication method of the photoreceptor includes transfer-doping of the narrow band gap blocking layers, which are deposited in alternating sequence with wide band gap semiconductor layers to form a blocking structure. Suppression of hole or electron injection can be obtained using the method. | 2013-12-26 |
20130341624 | Thin Film Transistor Substrate Having Metal Oxide Semiconductor and Method for Manufacturing the Same - The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized. | 2013-12-26 |
20130341625 | Light Emitting Device, Driving Method of Light Emitting Device and Electronic Device - By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT. | 2013-12-26 |
20130341626 | Semiconductor Device and Method of Manufacturing the Same - An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented. | 2013-12-26 |
20130341627 | DISPLAY DEVICE - The invention provides an active matrix EL display device which can perform a clear multi-gray scale color display. In particular, the invention provides a large active matrix EL display device at low cost by a manufacturing method which can selectively form a pattern. Power supply lines in a pixel portion are arranged in matrix by the manufacturing method which can selectively form a pattern. Further, capacitance between wirings is reduced by providing a longer distance between adjacent wirings by the manufacturing method which can selectively form a pattern. | 2013-12-26 |
20130341628 | DISPLAY DEVICE, ELECTRO-OPTICAL ELEMENT DRIVING METHOD AND ELECTRONIC EQUIPMENT - The present invention permits a capacitance value of an electro-optical element such as organic EL element to be arbitrarily set without changing the light extraction efficiency of a pixel. That is, the present invention permits a capacitance value Coled of an organic EL element ( | 2013-12-26 |
20130341629 | FLEXIBLE DISPLAY AND METHOD OF MANUFACTURING THE SAME - A substrate for a flexible display is disclosed. The substrate has a film stress range that does not affect an electronic device such as a thin film transistor, and includes a barrier layer having excellent oxygen and moisture blocking characteristics, and a method of manufacturing the substrate. The substrate includes: a plastic substrate having a glass transition temperature from about 350° C. to about 500° C.; and a barrier layer disposed on the plastic substrate, having a multi-layer structure, wherein at least one silicon oxide layer and at least one silicon nitride layer are alternately stacked on each other, and having a film stress from about −200 MPa to about 200 MPa due to the at least one silicon oxide layer and the at least one silicon nitride layer. | 2013-12-26 |
20130341630 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel. | 2013-12-26 |
20130341631 | SEMICONDUCTOR DEVICE HAVING EMBEDDED STRAIN-INDUCING PATTERN AND METHOD OF FORMING THE SAME - A semiconductor device can include an active region having a fin portion providing a channel region between opposing source and drain regions. A gate electrode can cross over the channel region between the opposing source and drain regions and first and second strain inducing structures can be on opposing sides of the gate electrode and can be configured to induce strain on the channel region, where each of the first and second strain inducing structures including a respective facing side having a pair of {111} crystallographically oriented facets. | 2013-12-26 |
20130341632 | CURRENT APERTURE DIODE AND METHOD OF FABRICATING SAME - A diode and a method of making same has a cathode an anode and one or more semiconductor layers disposed between the cathode and the anode. A dielectric layer is disposed between at least one of the one or more semiconductor layers and at least one of the cathode or anode, the dielectric layer having one or more openings or trenches formed therein through which the at least one of said cathode or anode projects into the at least one of the one or more semiconductor layers, wherein a ratio of a total surface area of the one or more openings or trenches formed in the dielectric layer at the at least one of the one or more semiconductor layers to a total surface area of the dielectric layer at the at least one of the one or more semiconductor layers is no greater than 0.25. | 2013-12-26 |
20130341633 | Semiconductor Device - Provided is a semiconductor device comprising: a GaN crystal substrate defining a principal, (0001) Ga face and defining a matrix, being a majority, polarity-determining domain of the GaN crystal, and inversion domains, being domains in which the polarity in the GaN crystal's [0001] direction is inverted with respect to the matrix, the GaN substrate having a ratio S | 2013-12-26 |
20130341634 | LIGHT EMITTING DIODE DIELECTRIC MIRROR - A high efficiency LED chip is disclosed that comprises an active LED structure comprising an active layer between two oppositely doped layers. A first reflective layer can be provided adjacent to one of the oppositely doped layers, with the first layer comprising a material with a different index of refraction than the active LED structure. The difference in IR between the active LED structure and the first reflective layer increases TIR of light at the junction. In some embodiments the first reflective layer can comprise an IR lower than the semiconductor material, increasing the amount of light that can experience TIR. Some embodiments of LED chips according to the present invention can also comprise a second reflective layer or metal layer on and used in conjunction with the first reflective layer such that light passing through the first reflective layer can be reflected by the second reflective layer. | 2013-12-26 |
20130341635 | DOUBLE ALUMINUM NITRIDE SPACERS FOR NITRIDE HIGH ELECTRON-MOBILITY TRANSISTORS - An epitaxial structure and a high electron mobility transistor (HEMT) employing the epitaxial structure includes a first spacer layer over a channel layer, a first barrier layer over the first spacer layer, and a second spacer layer over the first barrier layer. | 2013-12-26 |
20130341636 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction efficiency. An AlGaN semiconductor layer is formed in contact with and on a p-GaN p-contact layer, and an ITO transparent electrode is formed in contact with and on the semiconductor layer. The semiconductor layer comprises AlGaN having an Al composition ratio of 10 mol % to 50 mol %, and has a thickness of 2 Å to 50 Å. The semiconductor layer has a refractive index at an emission wavelength lower than that of the p-contact layer, and larger than that of the transparent electrode. By forming such a semiconductor layer, the reflection is suppressed between the p-contact layer and the transparent electrode, thereby improving the light extraction efficiency. | 2013-12-26 |
20130341637 | CARBODIIMIDE PHOSPHORS - The invention relates to compounds of the general formula I | 2013-12-26 |
20130341638 | MULTI-GATE FIELD-EFFECT TRANSISTOR AND PROCESS THEREOF - A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from bottom to top. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor. | 2013-12-26 |
20130341639 | DEEP DEPLETED CHANNEL MOSFET WITH MINIMIZED DOPANT FLUCTUATION AND DIFFUSION LEVELS - CMOS devices are fabricated with a channel layer having minimized dopant fluctuation and diffusion. Embodiments include forming a dummy gate, on a substrate, between a pair of spacers, forming, in the substrate, a source and drain separated by a ground plane layer, removing the dummy gate from the substrate, forming a cavity between the pair of spacers, forming, after removal of the dummy gate, a channel layer on the substrate, forming a high-k layer on the channel layer and on side surfaces of the cavity, and forming a replacement gate in the cavity. | 2013-12-26 |
20130341640 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor device includes a semiconductor, a source electrode, a drain electrode, an insulating layer and a gate electrode. The semiconductor layer includes an GaN layer and a AlGaN layer provided on the GaN layer. The source electrode and the drain electrode are provided on the semiconductor layer. The insulating layer is provided on the semiconductor layer between the source electrode and the drain electrode. The gate electrode includes a penetrating portion and a gate field plate, the penetrating portion being in contact with the semiconductor layer through the insulating layer and containing platinum in contact with the semiconductor layer, the gate field plate being in contact with an upper face of the insulating layer with a contact length of not less than 0.1 micrometers and not more than 0.3 micrometers and containing platinum in contact with the upper surface. | 2013-12-26 |