52nd week of 2014 patent applcation highlights part 15 |
Patent application number | Title | Published |
20140374646 | HYBRID MATERIAL COMPRISING GRAPHENE AND IRON OXIDE, METHOD FOR MANUFACTURING THE SAME, AND APPARATUS FOR TREATING WASTE WATER USING THE SAME - A method of manufacturing a hybrid material including graphene and iron oxide includes (a) preparing graphene oxide, (b) dispersing the graphene oxide in water to prepare a first dispersion, (c) adding divalent iron (Fe) and trivalent iron (Fe) to the first dispersion to prepare a second dispersion, (d) adjusting pH of the second dispersion to be about 8 to about 11 at about 25° C., (e) increasing the temperature of the second dispersion obtained from the (d) process up to about 80 to about 110° C., and adding a reducing agent to the second dispersion obtained from the (e) process to prepare a uniform and fine hybrid material including graphene and iron oxide. | 2014-12-25 |
20140374647 | REFRIGERATION OIL COMPOSITION - The refrigeration oil composition for HFC-based refrigerants or HC-based refrigerants of the invention includes a product of the esterification of an alcohol ingredient including pentaerythritol and dipentaerythritol and a fatty acid ingredient including at least one of a linear or branched fatty acid having 5 carbon atoms and a linear or branched fatty acid having 6 carbon atoms and at least one of a linear or branched fatty acid having 8 carbon atoms and a linear or branched fatty acid having 9 carbon atoms, wherein at least one of the fatty acid having 5 carbon atoms and the fatty acid having 6 carbon atoms in the fatty acid ingredient accounts for 20 to 100% by mol of the total amount of the fatty acid ingredient, and either the alcohol ingredient or the fatty acid ingredient is a mixture. | 2014-12-25 |
20140374648 | ANISOTROPIC HEAT CONDUCTIVE COMPOSITION - An object of the present invention is to provide an anisotropic heat conductive composition comprising: resin; and graphite fillers dispersed into the resin, wherein the graphite fillers each have a maximum diameter A in parallel with a basal plane of each of the graphite fillers and a maximum length C perpendicular to the basal plane, an average of the maximum diameters A ranges from 1 μm to 300 μm, an average ratio of the maximum diameter A to the maximum length C represented by A/C is at least 30, a content of the graphite fillers is 20 mass % to 40 mass %, and an average of a smaller angle made by the basal plane and a sheet surface of the sheet anisotropic heat conductive composition is less than 15°. | 2014-12-25 |
20140374649 | ADHESIVE MATERIAL - An adhesive material comprises a polymeric component, a heat conductive filler and a curing agent. The polymeric component comprises 30%-60% by volume of the adhesive material, and comprises thermoset epoxy resin and polymeric modifier configured to improve impact resistance of the thermoset epoxy resin. The polymeric modifier comprises thermoplastic, rubber or the mixture thereof. The polymeric modifier comprises 4%-45% by volume of the polymeric component. The heat conductive filler is evenly dispersed in the polymeric component, and comprises 40%-70% by volume of the adhesive material. The curing agent is capable of curing the thermoset epoxy resin at a temperature below 140° C. The adhesive material has a heat conductivity greater than 3 W/m-K. | 2014-12-25 |
20140374650 | WATER PURIFICATION COMPOSITIONS OF MAGNESIUM OXIDE AND APPLICATIONS THEREOF - Provided herein is a water purification composition containing a magnesium oxide component and a binder. In certain embodiments, the binder is selected from the group consisting of a polymeric binder, calcium aluminum silicate, and combinations of these. In certain embodiments, the polymeric binder is selected from the group consisting of polymethyl methacrylate, polyethylene, and combinations of these and is present in the composition in an amount of from about 12% to about 20% by weight. In other embodiments, the binder contains calcium aluminum silicate in an amount of from about 1% to about 15% by weight. | 2014-12-25 |
20140374651 | DISORDERED METAL HYDRIDE ALLOYS FOR USE IN A RECHARGEABLE BATTERY - A structurally and compositionally disordered electrochemically active alloy material is provided with excellent capacity and cycle life, as well as superior high-rate dischargeability. The alloy employs a disordered A | 2014-12-25 |
20140374652 | SYNERGISTIC MULTIPHASE HYDRIDE ALLOY - A hydrogen storage alloy material includes a primary phase having an AB | 2014-12-25 |
20140374653 | APPARATUS AND METHOD FOR SEPARATING RADIOACTIVE NUCLIDES AND RECOVERING REFINED SALT FROM LiCl WASTE SALT OR LiCl-KCl EUTECTIC WASTE SALT - There are provided an apparatus and method for separating radioactive nuclides from a waste salt and recovering a refined salt, which are able to maximize process efficiency and operating efficiency of a process of regenerating a waste salt produced during a pyrochemical process of used nuclear fuel by converting the waste salt into a thermally stable form and distilling the waste salt under a reduced pressure using a single apparatus having two top covers which are mountable to replace radioactive nuclides included in the waste salt, and highly improve applicability and utility in a remote operation facility for disposal of a radioactive waste by further simplifying operation/handling compared with conventional processes. | 2014-12-25 |
20140374654 | Highly Active Nano Iron Catalyst for the Absorption of Hydrogen Sulfide - The invention involves the formation of a stable iron (II) oxide and/or hydroxide. Preferably these oxides and/or hydroxides are present as nanoparticles in the 5-10 nanometer range. It has been discovered that such particles can be formed at lower cost and with fewer impurities by using ferrous carbonate (FeCO | 2014-12-25 |
20140374655 | METHODS FOR MITIGATING THE LEACHING OF HEAVY METALS FROM ACTIVATED CARBON - Compositions, methods, and systems for reducing leaching of heavy metals from sorbents having adsorbed heavy metals are described herein. Such compositions and methods may include reducing agents. | 2014-12-25 |
20140374656 | SOLUTION COMPRISING ORGANOFUNCTIONAL ALKALI SILICONATES, SILICATES AND METHOD OF PRODUCTION THEREOF - The invention relates to a method for producing a solution comprising organofunctional siliconates, silicates and, optionally, the cocondensation products thereof, and to the solutions and an installation for the production thereof. | 2014-12-25 |
20140374657 | COMPOUND, LIQUID CRYSTAL COMPOSITION, POLYMER MATERIAL AND FILM - A liquid crystal composition comprising a compound represented by the following formula has sufficient solubility and a wide usable concentration range, and exhibits excellent haze-lowering performance. B | 2014-12-25 |
20140374658 | LUMINESCENT MATERIALS DOPED WITH METAL NANO PARTICLES AND PREPARATION METHODS THEREFOR - The invention belongs to the field of luminescent materials. Disclosed are luminescent materials doped with metal nano particles and preparation methods therefor. The luminescent materials doped with metal nano particles are represented by the chemical formula: A | 2014-12-25 |
20140374659 | ZERO EMISSIONS SULPHUR RECOVERY PROCESS WITH CONCURRENT HYDROGEN PRODUCTION - Disclosed is a process for the concurrent production of hydrogen and sulphur from a H | 2014-12-25 |
20140374660 | Engine Chemical Reactor With Catalyst - The use of porous materials in the dead space of reciprocating engines is described. The porous material can be used to condition the cylinder gases. In addition, the porous material may include a catalyst for driving chemical reactions. The catalytic process occurs on the porous material, not on the cylinder walls. The engine parameters (number of cycles, number of strokes per cycle, compression ratio, engine speed, cylinder volume, valves timing, gas composition, pressure and temperature) are adjusted to optimize gas compression or chemical reactor performance. | 2014-12-25 |
20140374661 | METHOD FOR PRODUCING SYNTHESIS GAS BY GASIFYING A BIOMASS IN A FLUIDIZED BED - A method for producing synthesis gas by gasifying a biomass in a fluidized bed is disclosed wherein the biomass is fed to a fluidized bed gasifier. In order to eliminate vapor-forming alkalis produced during the gasification, the method brings the synthesis gas into contact with getter ceramics. | 2014-12-25 |
20140374662 | Process For Producing Synthesis Gas With Preservation Of The Energy Transfer By Means Of The Fumes - The present invention concerns a process for producing synthesis gas by steam reforming a hydrocarbon load in a reforming furnace provided with a combustion chamber and a convection chamber; the combustion chamber includes vertical tubes filled with catalyst wherein a mixture of hydrocarbons and steam circulates from top to bottom recovering raw synthesis gas at the bottom of the tubes, and burners disposed in rows heat the tubes; the convection chamber discharges fumes containing the gases produced by the combustion. The process also comprises steps of using the heat contained in the fumes for preheating and/or heating various fluids related or unrelated to the process. In the event of the reduction of the mass flow of fumes, the quantity of energy to be transferred into the convection area is maintained by supplying a supplementary gaseous flow to the combustion area. | 2014-12-25 |
20140374663 | METALS DOPED WITH ORGANIC MATERIAL - A metallic composite is disclosed including a corrodible metal and an organic material which endows the composite with resistance to corrosion. | 2014-12-25 |
20140374664 | INTERMEDIATE TRANSFER MEMBER AND METHOD OF MANUFACTURE - There is described an intermediate transfer member that include a layer of a polyimide polymer, carbon black and an alcohol phosphate. The alcohol phosphate has the structure: | 2014-12-25 |
20140374665 | FORMED ARTICLE, METHOD FOR PRODUCING THE SAME, ELECTRONIC DEVICE MEMBER AND ELECTRONIC DEVICE - Provided is a formed article including a layer obtained by implanting ions of a hydrocarbon compound into a polysilazane compound-containing layer. Also provided are a method for producing the formed article, an electronic device member including the formed article, and an electronic device including the electronic device member. The formed article exhibiting an excellent gas barrier capability and excellent bending resistance, a method for producing the formed article, and an electronic device member, or the like, comprising the formed article are provided. | 2014-12-25 |
20140374666 | NEGATIVE ELECTRODE ACTIVE MATERIAL FOR ELECTRIC DEVICE, NEGATIVE ELECTRODE FOR ELECTRIC DEVICE AND ELECTRIC DEVICE - A negative electrode active material for an electric device includes an alloy containing greater than or equal to 29% by mass of silicon and containing tin, carbon and inevitable impurities as a residue. | 2014-12-25 |
20140374667 | TERPENE POLYCARBONATE INTERMEDIATE TRANSFER MEMBERS - An intermediate transfer member that includes a terpene polycarbonate, an optional polysiloxane, and an optional conductive filler component. | 2014-12-25 |
20140374668 | COLORED FLUID AND MULTI-PHASE LIQUID COLORED COMPOSITION - An object of the present invention is to provide a colored liquid with superior separability from polar solvents for use with an electrowetting or electrofluidic device that uses a coloring agent added as a colorant to a nonpolar solvent. A colored liquid according to the present invention contains a nonpolar solvent and a colorant, and the colorant is a modified pigment containing a pigment (A) and a polymer (P) formed on a surface thereof by polymerizing a polymer (B) soluble in a nonaqueous solvent and at least one polymerizable unsaturated monomer (C) that is soluble in the nonaqueous solvent and that becomes insoluble or poorly soluble in the nonaqueous solvent after polymerization. A multi-phase liquid colored composition according to the present invention contains the colored liquid and a polar solvent immiscible with the colored liquid. | 2014-12-25 |
20140374669 | CORE-SHELL NICKEL ALLOY COMPOSITE PARTICLE METALLIZATION LAYERS FOR SILICON SOLAR CELLS - Materials and methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles. | 2014-12-25 |
20140374670 | SAFE METHOD FOR MANUFACTURING SILVER NANOPARTICLE INKS - In an embodiment, there is a method of preparing a conductive ink formulation. The method can include dissolving a stabilizer in a first solvent, adding a reducing agent to the first solvent, adding a metal salt to the first solvent and forming a slurry by precipitating stabilized metal nanoparticles in the first solvent. The method can also include forming a wet cake of the stabilized metal nanoparticles and adding the wet cake to a second solvent. The second solvent can include at least one of a polyvinyl alcohol derivative. The wet cake may not be actively dried prior to being added to the second solvent. | 2014-12-25 |
20140374671 | CONDUCTIVE METAL INKS WITH POLYVINYLBUTYRAL AND POLYVINYLPYRROLIDONE BINDER - A conductive ink includes a conductive material, a thermoplastic binder including a polyvinylbutyral terpolymer and a polyvinylpyrrolidone, and a solvent. The conductive material may be a conductive material is a conductive particulate having an average size of from about 0.5 to about 10 microns and as aspect ratio of at least about 3 to 1, such as a silver flake. | 2014-12-25 |
20140374672 | CONDUCTIVE METAL INKS WITH POLYVINYLBUTYRAL BINDER - A conductive ink includes a conductive material, a thermoplastic polyvinylbutyral terpolymer binder and a glycol ether solvent. The conductive material may be a conductive material is a conductive particulate having an average size of from about 0.5 to about 10 microns and as aspect ratio of at least about 3 to 1, such as a silver flake. | 2014-12-25 |
20140374673 | HYBRID SILICON AND CARBON CLATHRATES - A composition comprising a Type 1 clathrate of silicon having a Si | 2014-12-25 |
20140374674 | THERMISTOR MATERIAL FOR A SHORT RANGE OF LOW TEMPERATURE USE AND METHOD OF MANUFACTURING THE SAME - A thermistor material for a short range of low temperature use includes a matrix material composed of nitride-based and/or oxide-based insulating ceramics, conductive particles composed of α-SiC and dispersed in the grain boundary of each crystal grain of the matrix material so as to form an electric conduction path. The thermistor material further contains boron and second conductive particles added thereto, which are composed of a metal or an inorganic compound, having a specific electric resistance value at room temperature lower than that of the α-SiC and a melting point of 1700° C. or more. Such a thermistor material is produced by mixing matrix powder, conductive powder, second conductive powder, boron powder, and a sintering agent as necessary such that a temperature coefficient of resistance (B value) and a specific electric resistance value at room temperature are each within a predetermined range, and molding and sintering the resultant mixture. | 2014-12-25 |
20140374675 | PHOTOSENSITIVE RESIN COMPOSITION, BLACK MATRIX, COLOR FILTER, AND LIQUID CRYSTAL DISPLAY DEVICE - A photosensitive resin composition, a black matrix, a color filter, and a liquid crystal display device including the resin composition are provided. The photosensitive resin composition includes an alkali-soluble resin (A), a compound (B) containing an ethylenically unsaturated group, a photo initiator (C), a solvent (D), and a black pigment (E). The compound (B) containing an ethylenically unsaturated group includes a compound (B-1) represented by the following formula (1). | 2014-12-25 |
20140374676 | Colored Resin Composition Exhibiting Pleochroism, and Molded Plastics Manufactured Using Same - The present invention relates to a coloring resin composition exhibiting pleochroism comprising 100 parts by weight of a transparent thermoplastic resin (A); 0.01 to 0.03 parts by weight of a dye for coloring a resin (B) which is one selected from the group consisting of an azo-based dye (b1), an anthraquinone-based dye (b2), and a methine dye (b3); and 0.1 to 0.3 parts by weight of a functional black dye (C) obtained by mixing an anthraquinone-based dye (c1) and a perinone-based dye (c2). A resin molded article manufactured by the coloring resin composition exhibiting pleochroism of the present invention is characterized by exhibiting different colors of light according to thicknesses although the resin molded article is irradiated with light sources in a single wavelength. | 2014-12-25 |
20140374677 | COLORED COMPOSITION, COLORED PHOTOSENSITIVE COMPOSITION, COLOR FILTER AND LIQUID CRYSTAL DISPLAY DEVICE EQUIPPED WITH SAME, ORGANIC EL DISPLAY DEVICE, AND SOLID-STATE IMAGE SENSOR - A colored composition including: (A) a phthalocyanine compound having a particular structure, (B) a yellow coloring material, and (C) a solvent. | 2014-12-25 |
20140374678 | Leverage Bar for Manipulating Formwork Panels - A leverage bar for manipulating formwork panels is used to provide a mechanical advantage for aligning heavy formwork panels before clamping. A pin support plate is connected to one end of an elongated bar. A pair of cylindrical pins is connected to the pin support plate, and a third pin is connected to the elongated bar opposite the first and second pin. The pins are inserted into pre-existing holes in the formwork panels and torque is applied to the elongated bar by a worker at the end opposite the pins in order to leverage the panels into place. | 2014-12-25 |
20140374679 | CABLE INSTALLATION APPARATUS FOR MOUNTING ON A FLANGED STRUCTURE - A cable installation apparatus | 2014-12-25 |
20140374680 | Screw-driven lifting platform - A screw-driven lifting platform, includes a lifting portion and a transmitting portion, which is characterized in comprising a base, a left-and-right screw thread rod, a left and a right group (two group in total) of X-shaped connecting rods and a horizontal lifting platform, wherein two groups (a left group and a right group) of the X-shaped connecting rods are respectively provided on left and right end portions between the base and the horizontal lifting platform, fixed ends of the X-shaped connecting rod are respectively hinged on the base and the horizontal lifting platform, movable ends of the X-shaped connecting rod are connected with the left-and-right screw thread rod, when the left-and-right screw thread rod rotates, the movable ends of the left and right groups of the X-shaped connecting rod are driven to move, so as to realize lifting and lowering the horizontal lifting platform. | 2014-12-25 |
20140374681 | Stairway Assist Apparatus - This apparatus helps mobility impaired individuals to walk up and down stairs and can reduce the incidence of stairway falls. A low-friction, high strength track is attached to a wall or banisters, running parallel to the rise of the stairs. A perpendicular cross rail assembly serves as a grip and a barrier to prevent falling. The cross rail slides along the track on a low-friction carriage. The user moves the cross rail up or down along the stairway one full step at a time. The cross rail locks into a fixed stopping position for travel to the next step. The fixed positions are adjustable. A counterweight reduces the force required for users to move the cross rail up or down stairs. A braking system is in place to lock the cross rail if a user falls. | 2014-12-25 |
20140374682 | SAFETY RAIL SYSTEM AND METHOD FOR USING SAME - Embodiments of the disclosure provide a safety rail. The safety rail may include a body disposed on first and second adjustable boots. The first and second adjustable boots may be adapted to secure the safety rail to an excavation support structure. The body may include a lower rail connected to the first and second adjustable boots. | 2014-12-25 |
20140374683 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device may include a multi-layered insulating layer formed on a semiconductor substrate, on which a lower electrode is formed. The multi-layered insulating layer may include a first hole and a second hole, concentrically formed therein, to expose the lower electrode, wherein a diameter of the first hole is larger than a diameter of the second hole, A variable resistance material layer may be formed in the second hole to contact the lower electrode and an upper electrode may be formed in the first hole to contact the variable resistance material layer. | 2014-12-25 |
20140374684 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a multi-layered insulating layer formed on a semiconductor substrate on which a lower electrode is formed, and including a plurality of holes of which diameters are increased at a first height or higher, a variable resistance material layer formed on the lower electrode to a second height of each of the holes, and an upper electrode formed on the variable resistance material layer to be buried in each of the holes. | 2014-12-25 |
20140374685 | PHASE CHANGE CURRENT DENSITY CONTROL STRUCTURE - A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers. | 2014-12-25 |
20140374686 | THERMAL-DISTURB MITIGATION IN DUAL-DECK CROSS-POINT MEMORIES - A thermal isolation layer is formed between the bit line (BL) layers or word line (WL) layers of the decks of a multi-deck phase-change cross-point memory to mitigate thermal problem disturb of memory cells that tends to increase as memory sizes are scaled smaller. Embodiments of the subject matter disclosed herein are suitable for, but are not limited to, solid-state memory arrays and solid-state drives. | 2014-12-25 |
20140374687 | RESISTIVE MEMORY WITH A STABILIZER - A resistive memory device and a method for fabricating the resistive memory device. The memory device includes a first electrode and a resistive memory element in electrical contact. The memory device also includes a non-programmable stabilizer element in electrical and thermal contact with the resistive memory element. The stabilizer element has at least one physical dimension based on a physical characteristic of the resistive memory element such that the maximum resistance of the stabilizer element is substantially less than the maximum resistance of the resistive memory element. | 2014-12-25 |
20140374688 | High Capacity Select Switches for Three-Dimensional Structures - A three-dimensional nonvolatile memory array includes a select layer that selectively connects vertical bit lines to horizontal bit lines. Individual select switches of the select layer include two separately controllable transistors that are connected in series between a horizontal bit line and a vertical bit line. Each transistor in a select switch is connected to a different control circuit by a different select line. | 2014-12-25 |
20140374689 | CONDUCTIVE OXIDE RANDOM ACCESS MEMORY (CORAM) CELL AND METHOD OF FABRICATING SAME - Conductive oxide random access memory (CORAM) cells and methods of fabricating CORAM cells are described. For example, a material layer stack for a memory element includes a first conductive electrode. An insulating layer is disposed on the first conductive oxide and has an opening with sidewalls therein that exposes a portion of the first conductive electrode. A conductive oxide layer is disposed in the opening, on the first conductive electrode and along the sidewalls of the opening. A second electrode is disposed in the opening, on the conductive oxide layer. | 2014-12-25 |
20140374690 | SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE - A semiconductor element includes a first electrode having at least one convex feature, a second electrode having a concave feature opposed to the convex feature, and a variable resistance layer including an element whose absolute value of standard reaction Gibbs energy for forming oxide is larger than the corresponding value of an element included in the first electrode, and being disposed between the convex feature and the concave feature or on the outer circumference of the convex feature of the first electrode. | 2014-12-25 |
20140374691 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a non-volatile semiconductor memory device includes: a semiconductor substrate; a plurality of first lines; a plurality of second lines; and a plurality of non-volatile memory cells arranged at positions where the plurality of first lines intersect with the plurality of second lines, wherein each of the plurality of non-volatile memory cells includes a resistance change element and a rectifying element connected in series to the resistance change element, and a resistance change film continuously extending over the plurality of second lines is arranged between the plurality of first lines and the plurality of second lines, and the resistance change element includes a portion where the first line intersect with the second line in the resistance change film. | 2014-12-25 |
20140374692 | SEMICONDUCTOR MEMORY APPARATUS AND FABRICATION METHOD THEREOF - Semiconductor memory apparatus and a method of fabricating the same are provided. The semiconductor memory apparatus includes a semiconductor substrate in which a cell area and a peripheral area are defined, a plurality of pillars formed in the a cell area of the semiconductor substrate to a first depth, a stepped part formed in the peripheral area to a height corresponding to the first depth, a recessed part formed in the stepped part to a second depth, and a core switching device formed in the recessed part. | 2014-12-25 |
20140374693 | VARIED MULTILAYER MEMRISTIVE DEVICE - A varied multilayer memristive device includes a first memristive device stacked on a second memristive device. The physical parameters of the second memristive device differ from physical parameters of the first memristive to account for thermal budgeting differences present during formation processes for the memristive devices to reach specified performance parameters. | 2014-12-25 |
20140374694 | MANUFACTURABLE SUB-3 NANOMETER PALLADIUM GAP DEVICES FOR FIXED ELECTRODE TUNNELING RECOGNITION - A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nanogap. | 2014-12-25 |
20140374695 | NANOGAP DEVICE WITH CAPPED NANOWIRE STRUCTURES - An anti-retraction capping material is formed on a surface of a nanowire that is located upon a dielectric membrane. A gap is then formed into the anti-retraction capping material and nanowire forming first and second capped nanowire structures of a nanodevice. The nanodevice can be used for recognition tunneling measurements including, for example DNA sequencing. The anti-retraction capping material serves as a mobility barrier to pin, i.e., confine, a nanowire portion of each of the first and second capped nanowire structures in place, allowing long-term structural stability. In some embodiments, interelectrode leakage through solution during recognition tunneling measurements can be minimized. | 2014-12-25 |
20140374696 | LIGHT-EMITTING ELEMENT, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - The present invention provides a light-emitting element, display panel and manufacturing method thereof. The light-emitting element includes a cathode and an anode, disposed oppositely; and a light-emitting layer, disposed between the cathode and the anode; the light-emitting layer comprising a mixture of organic material and white-light emitting quantum dot material. As such, the present invention improves the stability and luminance of the light-emitting element, and the light-emitting element has the advantages of ultra-thin, transparent and easy to bend. | 2014-12-25 |
20140374697 | LIGHT-EMITTING ELEMENT, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - The present invention provides a light-emitting element, display panel and manufacturing method thereof. The light-emitting element includes a cathode and an anode, disposed oppositely; and a light-emitting layer, disposed between the cathode and the anode; the light-emitting layer comprising a mixture of organic material and blue quantum dot material. As such, the present invention improves the stability and luminance of the light-emitting element, and the light-emitting element has the advantages of ultra-thin, transparent and easy to bend. | 2014-12-25 |
20140374698 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING SAME - A light emitting diode chip includes a substrate and a first conductive layer formed on the substrate. The first conductive layer includes a plurality of P-type AlInGaN layers and a plurality of graphenel layers alternately stacked on each other. A P-type AlInGaN layer, an active layer and an N-type AlInGaN layer are formed on the first conductive layer in sequence. A second conductive layer is formed on the N-type AlInGaN layer. A first electrode is electrically connected to the first conductive layer and a second electrode is electrically connected to the second conductive layer. | 2014-12-25 |
20140374699 | SINGLE PHOTON DEVICE, APPARATUS FOR EMITTING AND TRANSFERRING SINGLE PHOTON, AND METHODS OF MANUFACTURING AND OPERATING THE SAME - Provided are single photon devices, single photon emitting and transferring apparatuses, and methods of manufacturing and operating the single photon devices. The single photon device includes a carrier transport layer disposed on a conductive substrate and at least one quantum dot disposed on the carrier transport layer. A single photon emitting and transferring apparatus includes a single photon device, an element that injects a single charge into the single photon device described above, a light collecting unit that collects light emitted from the single photon device, and a light transfer system that transmits light collected by the light collecting unit to the outside. | 2014-12-25 |
20140374700 | SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting diode, including: an n-GaN layer, a quantum well layer, an electron blocking layer, and a p-GaN layer, which are sequentially stacked on a substrate. The electron blocking layer includes at least one first AlGaN layer and at least one second AlGaN layer. The first AlGaN layer and the second AlGaN layer are alternately stacked. The adjacent first and second AlGaN layers have different Al component. | 2014-12-25 |
20140374701 | Superlattice Structures and Infrared Detector Devices Incorporating the Same - Embodiments of strain-balanced superlattice infrared detector devices and their fabrication are disclosed. In one embodiment, an infrared detector device includes a first contact layer, and absorber superlattice region, a wider gap unipolar barrier region, and a second contact layer. The absorber superlattice region has a period defined by a first InAs layer, strain-balancing structure, a second InAs layer, and an InAsSb layer. The strain-balancing structure comprises an arbitrary alloy layer sequence containing at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP. In another embodiment, the absorber superlattice region has a period defined by a first InAs layer, first strain-balancing structure, a second InAs layer, a first GaSb layer, a second strain-balancing structure, and a second GaSb layer. The first strain-balancing structure includes at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP. The second strain-balancing structure includes GaInSb and GaSb. | 2014-12-25 |
20140374702 | CARBON NANOSTRUCTURE DEVICE FABRICATION UTILIZING PROTECT LAYERS - Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing. | 2014-12-25 |
20140374703 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display includes a pixel part on a substrate, the pixel part being configured to display an image, a peripheral part at a peripheral area of the pixel part, the peripheral part including a chip on film connection part, and a chip on film connected to the chip on film connection part, the chip on film connection part including a chip on film bonding part, the chip on film being attached to the chip on film bonding part, and an array test part separated from the chip on film bonding part, the array test part being contacted with a probe pin. | 2014-12-25 |
20140374704 | FLEXIBLE DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A flexible display panel and a method of manufacturing the same. The flexible display panel includes: a flexible panel including a display region and a non-display region, wherein the display region includes an organic light emitting device; a planarization layer disposed on the flexible panel; and a metal-dielectric layer disposed on the planarization layer and including a metal layer and a dielectric layer. | 2014-12-25 |
20140374705 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Organic light-emitting display device and method of manufacturing the same are provided. Here, the organic light-emitting display device includes a substrate which has a first area and a second area, a first electrode which is on each of the first area and the second area of the substrate, a plurality of emitting layers on the first electrode and including a first emitting layer on the first area and a second emitting layer on the second area, a second electrode on the emitting layers, a capping layer on the second electrode, and a refractive pattern on the capping layer, wherein the refractive pattern is on at least one of the first area and the second area. | 2014-12-25 |
20140374706 | COMPOUND, ORGANIC OPTOELECTRIC DEVICE INCLUDING THE SAME AND DISPLAY DEVICE INCLUDING THE OPTOELECTRIC DEVICE - Disclosed are a compound for an organic optoelectric device, an organic optoelectric device including the same and a display device including the organic optoelectric device, wherein the compound for an organic optoelectric device is represented by the following Chemical Formula 1, | 2014-12-25 |
20140374707 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display includes a substrate; a first pixel electrode disposed on the substrate; a second pixel electrode disposed on the substrate; a hole auxiliary layer disposed on the first pixel electrode and the second pixel electrode; a first organic emission layer disposed on the hole auxiliary layer in correspondence with the first pixel electrode and the second pixel electrode; a blue organic emission layer disposed on the hole auxiliary layer in correspondence with the first pixel electrode and the second pixel electrode, the blue organic emission layer being further disposed on the first organic emission layer; a non-doping blue organic emission layer disposed on the blue organic emission layer; an electron auxiliary layer disposed on the non-doping blue organic emission layer; and a common electrode disposed on the electron auxiliary layer. | 2014-12-25 |
20140374708 | ELECTROLUMINESCENT ORGANIC DOUBLE GATE TRANSISTOR - An organic electroluminescent transistor is described. The organic electroluminescent transistor has a first and a second dielectric layer, a first and a second control electrode and an assembly having a source electrode, a drain electrode and an ambipolar channel. The ambipolar channel has a first layer of semiconductor material, a second layer of semiconductor material and a layer of emissive material arranged between the first layer of semiconductor material and the second layer of semiconductor material. The source electrode and the drain electrode are both in contact with only one of the two layers of semiconductor material. | 2014-12-25 |
20140374709 | LIGHT EMITTERS WITH SERIES CONNECTION - An organic solid state lighting system comprising multiple OLED modules connected in series is provided. | 2014-12-25 |
20140374710 | PLASTIC WINDOW AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME - A plastic window and an organic light-emitting display apparatus, the plastic window including a first layer; a second layer stacked on the first layer; and coating layers on a bottom surface of the first layer and on a top surface of the second layer, respectively, the top surface of the second layer facing a direction opposite to that of the bottom surface of the first layer, wherein the first layer and the second layer each include polyethylene terephthalate, and the first layer has the same thickness as the second layer. | 2014-12-25 |
20140374711 | ORGANIC LIGHT-EMITTING DEVICE - Provided is an organic light-emitting device including a first electrode; a second electrode disposed opposite to the first electrode; an emission layer disposed between the first electrode and the second electrode, the emission layer including at least one specific light-emitting material; and a hole-transporting region disposed between the first electrode and the emission layer, the hole-transporting region including at least one specific hole-transporting material. | 2014-12-25 |
20140374712 | ORGANIC LIGHT EMITTING DIODE DEVICE - An organic light emitting device includes an organic light emitting element and a sensor. The organic light emitting element includes an organic layer between an anode and cathode. The sensor detects a quality that provides an indication of the degradation of the organic layer of the light emitting element. The sensor may be a chemical sensor or another type of sensor. The sensor may be fixed permanently within or outside the light emitting element, and electronic measures may be taken to reduce performance loss as a result of the detected degradation of the organic layer. | 2014-12-25 |
20140374713 | ORGANIC LIGHT-EMITTING DEVICE - Provided is an organic light-emitting device including a first electrode, a second electrode disposed opposite to the first electrode, an emission layer disposed between the first electrode and the second electrode, and an electron-transporting layer disposed between the emission layer and the second electrode. The electron-transporting layer includes a first electron-transporting material and a second electron-transporting material. The lowest unoccupied molecular orbital (LUMO) energy level of the first electron-transporting material (EL | 2014-12-25 |
20140374714 | THIN FILM TRANSISTOR AND ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE ASSEMBLY AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor includes a semiconductor layer including a source region, a drain region, a channel region, first lightly doped drain regions adjacent to the channel region and second lightly doped drain regions adjacent to the first lightly doped drain regions; wherein the second lightly doped drain regions have a doping concentration lower than that of the first lightly doped drain regions. According to the present application, the leakage current in a switching transistor may be further reduced, thereby avoiding instability and even failure in the operation of the assembly caused by overlarge leakage current. | 2014-12-25 |
20140374715 | METHOD FOR FABRICATING ORGANIC ELECTRONIC DEVICE HAVING SEPARATE PATTERNS USING ORGANIC FIBER, AND ORGANIC ELECTRONIC DEVICE HAVING THE ORGANIC FIBER - An organic electronic device is provided. The organic electronic device includes a substrate and an organic fiber disposed on the substrate. Material patterns are disposed on exposed surfaces of the substrate at both sides of the organic fiber and separated by the organic fiber. By arranging the organic fiber and then coating the organic fiber with a material layer to form material patterns separated by the organic fiber, very simple, fast, and sufficient separation of patterns may be implemented with no complicated process such as a lithography process, used in the art. | 2014-12-25 |
20140374716 | DISPLAY DEVICE - Provided is a display device including first and second substrates having an emission region and a transparent region and disposed to face each other, a light emission layer formed on the emission region of the first substrate, a barrier formed to cover the light emission layer and a variable light shield layer formed in the barrier within the transparent region of the first substrate. | 2014-12-25 |
20140374717 | AMINE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - An amine-based compound is represented by Formula 1: | 2014-12-25 |
20140374718 | THIN FILM TRANSISTOR AND ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE ASSEMBLY AND METHOD FOR MANUFACTURING THE SAME - The present application provides a thin film transistor, an active matrix organic light emitting diode assembly and a method for manufacturing the same. The thin film transistor includes: a substrate; a buffer layer on the substrate; a semiconductor layer on the buffer layer, including a source region, a drain region and a channel region; a first gate insulating layer covering the semiconductor layer; a second gate insulating layer foot on the first gate insulating layer, a width of the second gate insulating layer foot being smaller than a width of the first gate insulating layer; and a gate electrode on the second gate insulating layer foot; wherein a part of the first gate insulating layer that is on the semiconductor layer has a flat upper surface. The present application may obtain better implantation profiles of source region and drain region, thereby obtaining better uniformity in TFT performance. | 2014-12-25 |
20140374719 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - An OLED display device with a passivation film formed between a sealing member and a pad portion through a structural alteration of the sealing member and first and second protective layers prevents deterioration of image quality and a driving faults caused by short circuits and electro-static discharge. | 2014-12-25 |
20140374720 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING SAME - An aromatic amine derivative represented by formula (1): | 2014-12-25 |
20140374721 | NOVEL BENZOTRIAZOLE DERIVATIVES AND ORGANIC ELECTROLUMINESCENT DEVICES USING THE DERIVATIVES - Benzotriazole derivatives represented by the following general formula (1), | 2014-12-25 |
20140374722 | COMPOUND, ORGANIC ELECTRIC ELEMENT USING THE SAME, AND AN ELECTRONIC DEVICE THEREOF - A compound represented by Formula 1. An organic electric element includes a first electrode, a second electrode, and an organic material layer including the compound of Formula 1. The organic material layer include a light emitting layer, a hole transport layer including a compound represented by Formula 2, and an emission-auxiliary layer including the compound represented by Formula 1. When the organic electric element includes the compound in the organic material layer, luminous efficiency, color purity, and life span can be improved. | 2014-12-25 |
20140374723 | NOVEL ORGANIC COMPOUND, ORGANIC LIGHT EMITTING DEVICE, AND IMAGE DISPLAY DEVICE - To provide a novel organic compound suitable for an organic light emitting device. | 2014-12-25 |
20140374724 | ORGANIC LIGHT-EMITTING COMPOUND AND ORGANIC ELECTROLUMINESCENT DEVICE USING SAME - The present invention relates to a novel indole-based compound having superior hole injection and transport capabilities, light-emitting capabilities, and the like, and an organic electroluminescent device which comprises the indole-based compound in one or more organic layers thereof so as to thereby achieve improved characteristics, such as light-emitting efficiency, driving voltage, and lifespan characteristics. | 2014-12-25 |
20140374725 | ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENT ELEMENT - An organic electroluminescent element including: a lower electrode; an organic functional layer on the lower electrode; and an upper electrode on the organic functional layer, wherein profile of an upper surface of the upper electrode has a skewness of between −0.5 and 0.7 inclusive. | 2014-12-25 |
20140374726 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD FOR PROCESSING AN ORGANIC LIGHT-EMITTING DEVICE - Various embodiments relates to an organic light-emitting device, including at least one functional layer for generating electroluminescent radiation, an encapsulation structure formed on or over the at least one functional layer, and a heat conduction layer formed on or over the encapsulation structure. The heat conduction layer includes a matrix material and heat conducting particles embedded in the matrix material. | 2014-12-25 |
20140374727 | METAL COMPLEX AND LIGHT-EMITTING DEVICE CONTAINING THE METAL COMPLEX - A highly stable metal complex useful for the manufacture of a light-emitting device has an excellent lifetime property, particularly in a blue region, specifically a metal complex represented by Formula (1): | 2014-12-25 |
20140374728 | PHOSPHORESCENT ORGANIC LIGHT EMITTING DEVICES HAVING A HOLE TRANSPORTING COHOST MATERIAL IN THE EMISSIVE REGION - An improved OLED includes an emissive layer disposed between a cathode and an anode where the emissive layer includes a multi-component host material and a phosphorescent emitter material. The host material includes at least a first host compound and a second host compound, where the first host compound is hole-transporting host compound having the general formula wherein R | 2014-12-25 |
20140374729 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, AND OPTOELECTRONIC COMPONENT - Various embodiments relate to a method for producing an optoelectronic component includes applying a planarization medium to a surface of a substrate, wherein the planarization medium comprises a material which absorbs electromagnetic radiation having wavelengths of a maximum of 600 nm, applying a first electrode on or above the material, forming an organic functional layer structure on or above the first electrode, and forming a second electrode on or above the organic functional layer structure. | 2014-12-25 |
20140374730 | ORGANIC ELECTROLUMINESCENT LIGHT EMITTING DISPLAY DEVICE - In an organic electroluminescent light emitting display device comprising a plurality of pixels each of which includes an organic electroluminescent element emitting light by a current supplied thereto, a plurality of active elements including a first active element which acquires a data signal and a second active element which regulates the current supplied to the organic electroluminescent element in accordance with the data signal, and a capacitive element storing the data signal, the present invention utilizes a part of the capacitive element arranged in one of the pixels for a light shielding member which shields the plurality of active elements arranged the one of the pixels from light emitted by the organic electroluminescent element arranged therein or another pixel adjacent thereto so as to suppress image quality deterioration and smear appearing in an image display area of the organic electroluminescent light emitting display device. | 2014-12-25 |
20140374731 | SUBSTRATE FOR ORGANIC ELECTRONIC DEVICE - The present application relates to a substrate for an organic electronic device (OED), an organic electronic device, a method of manufacturing the substrate or OED and lighting device. The substrate for an OED of the present application may be improved in durability by preventing penetration of external materials such as moisture or oxygen, and thus an OED having excellent light extraction efficiency may be formed. Also, since the substrate may be stably attached to an encapsulating structure sealing the OED, the device may have excellent durability with respect to abrasion of an electrode layer or pressure applied from an external environment. In addition, a surface hardness of an external terminal of the OED may be maintained at a suitable level. | 2014-12-25 |
20140374732 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display apparatus and a method of manufacturing the same are disclosed. The organic light emitting display apparatus includes, for example, a bus electrode, an insulating layer covering the bus electrode and having a bus electrode hole exposing at least a part of the bus electrode, a pixel electrode formed on the insulating layer and electrically coupled with the bus electrode, a pixel defining layer exposing a part of the pixel electrode and a part of the bus electrode, a first intermediate layer on the pixel defining layer and the pixel electrode, the first intermediate layer having a first opening to expose the part of the bus electrode, an emission layer disposed on the first intermediate layer, and an opposite electrode to correspond to the pixel electrode and the bus electrode and contacting the bus electrode through the first opening and the bus electrode hole. | 2014-12-25 |
20140374733 | PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR USING THE SAME, IMAGING DEVICE, PHOTOSENSOR, AND COMPOUND - An object of the present invention is to provide a photoelectric conversion element having a photoelectric conversion film which exhibits heat resistance, a high photoelectric conversion efficiency, a low level of dark currents, rapid response, and sensitivity characteristics to red and can be produced by a vapor deposition processing that is continuously performed under a high-temperature condition. The photoelectric conversion element of the present invention is a photoelectric conversion element in which a conductive film, a photoelectric conversion film containing a photoelectric conversion material, and a transparent conductive film are laminated on one another in this order, wherein the photoelectric conversion material includes a compound represented by Formula (1). | 2014-12-25 |
20140374734 | SUBSTRATE FOR ORGANIC ELECTRONIC DEVICE - Provided are a substrate for an organic electronic device (OED), an organic electronic device, a method of manufacturing the substrate or OED, and lighting. The substrate for an OED may be increased in durability by preventing penetration of external materials such as moisture or oxygen, and thus form an OED having excellent light extraction efficiency. In addition, since the substrate may be stably attached to an encapsulating structure sealing the OED, the device may have excellent durability with respect to abrasion of an electrode layer or pressure applied from an external environment. In addition, a surface hardness of an external terminal of the OED may be maintained at a suitable level. | 2014-12-25 |
20140374735 | SUBSTRATE FOR ORGANIC ELECTRONIC DEVICE - Provided are a substrate for an organic electronic device (OED), an organic electronic system, a method of manufacturing the substrate or the system, and lighting. The substrate for an OED may be increased in durability by preventing penetration of an external material such as moisture or oxygen, and thus an organic electronic system having excellent light extraction efficiency may be formed. In addition, since the substrate may be stably attached to an encapsulating structure sealing the organic electronic system, the device may have excellent durability with respect to abrasion of an electrode layer or pressure applied from an external environment. In addition, a surface hardness of an external terminal of the organic electronic system may be maintained at a suitable level. | 2014-12-25 |
20140374736 | GAS BARRIER SUBSTRATE AND ORGANIC ELECTRO-LUMINESCENT DEVICE - A gas barrier substrate including a first gas barrier layer, a substrate, and a second gas barrier layer is provided. The first gas barrier layer has a central bonding surface bonded with the substrate and a peripheral boding surface surrounding the central bonding surface. The second gas barrier layer entirely covers the substrate and the first gas barrier layer. The second gas barrier layer is bonded with the substrate and the peripheral boding surface of the first gas barrier layer, wherein a minimum distance from an edge of the substrate to an edge of the first gas barrier layer is greater than a thickness of the first gas barrier layer. | 2014-12-25 |
20140374737 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - Light-emitting elements in which an increase of driving voltage can be suppressed are provided. Light-emitting devices whose power consumption is reduced by including such light-emitting elements are also provided. In a light-emitting element having an EL layer between an anode and a cathode, a first layer in which carriers can be produced is formed between the cathode and the EL layer and in contact with the cathode, a second layer which transfers electrons produced in the first layer is formed in contact with the first layer, and a third layer which injects the electrons received from the second layer into the EL layer is formed in contact with the second layer. | 2014-12-25 |
20140374738 | NOVEL ORGANIC COMPOUND, LIGHT-EMITTING DEVICE, AND IMAGE DISPLAY APPARATUS - Provided is an acenaphtho[1,2-k]benzo[e]acephenanthrene derivative represented by general formula (1): | 2014-12-25 |
20140374739 | OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - An oxide semiconductor thin film transistor includes a source, a drain, a channel layer, an insulation layer, a first conductor and a second conductor. The channel layer is disposed between the source and the drain, and separated from the source and the drain. The insulation layer covers the source, the drain and the channel layer. The first conductor is at least disposed in a first opening of the insulation layer so as to touch the source and the channel layer. The second conductor is at least disposed in a second opening of the insulation layer so as to touch the drain and the channel layer. | 2014-12-25 |
20140374740 | OXIDE SEMICONDUCTOR TFT ARRAY SUBSTRATE AND METHOD FOR FORMING THE SAME - A TFT array substrate is disclosed. The substrate includes a TFT having a gate insulation layer, and an active layer partly thereon. The TFT also has a first part of an etch barrier layer on the active layer, and a source and drain on the first part of the etch barrier layer. The substrate also includes a capacitance having a first electrode plate, a second part of the gate insulation layer on the first electrode plate, a second part of the etch barrier layer on the second part of the gate insulation layer, and a second electrode plate on the second part of the etch barrier layer. The second part of the etch barrier layer has a thickness less than the first part of the etch barrier layer, and/or there is no etch barrier layer between the second part of the gate insulation layer and the second electrode plate. | 2014-12-25 |
20140374741 | OXIDE SEMICONDUCTOR, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR INCLUDING THE SAME - An oxide semiconductor includes zinc (Zn), tin (Sn), and at least one of Ag and Au. | 2014-12-25 |
20140374742 | LIGHT EMITTING DISPLAY - An exemplary light emitting display includes a nitride light emitting diode formed on a first substrate and a thin film transistor formed on a second substrate. The first substrate and the second substrate are arranged face-to-face, and the first substrate is spaced from the second substrate. The nitride light emitting diode electrically connects with the thin film transistor. The thin film transistor comprises an active layer, and the active layer of the thin film transistor deviates from the light path of the nitride light emitting diode. | 2014-12-25 |
20140374743 | OXIDE SEMICONDUCTOR FILM AND FORMATION METHOD THEREOF - To provide a crystalline oxide semiconductor film, an ion is made to collide with a target including a crystalline In—Ga—Zn oxide, thereby separating a flat-plate-like In—Ga—Zn oxide in which a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including an indium atom and an oxygen atom, and a third layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order; and the flat-plate-like In—Ga—Zn oxide is irregularly deposited over a substrate while the crystallinity is maintained. | 2014-12-25 |
20140374744 | SEMICONDUCTOR DEVICE - To provide a new layout. A semiconductor device includes a first conductive layer; a first insulating layer over the first conductive layer; an oxide semiconductor layer over the first insulating layer; a second conductive layer electrically connected to the oxide semiconductor layer; a third conductive layer electrically connected to the oxide semiconductor layer; a fourth conductive layer over the first insulating layer; a second insulating layer over the oxide semiconductor layer, the second conductive layer, the third conductive layer, and the fourth conductive layer; a fifth conductive layer over the second insulating layer; a first opening in the first and second insulating layers; and a second opening in the second insulating layer. | 2014-12-25 |
20140374745 | IMAGING DEVICE - An imaging device that is highly stable to irradiation with radial rays such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device takes an image with radial rays such as X-rays and includes pixel circuits arranged in a matrix and a scintillator overlapping the pixel circuits. The pixel circuits each includes a switching transistor with an extremely small off-state current and a light-receiving element which is configured to convert the radial rays to electrical charges. A gate insulating film of the switching transistor has a stacked structure including a silicon nitride film with a thickness of 100 nm to 400 nm and a silicon oxide film or a silicon oxynitride film with a thickness of 5 nm to 20 nm. | 2014-12-25 |